Vacancy Concentration Research Articles

Establishing metal-nonoxygen bonds to improve thermal stability of Pt1/CeO2 via coating boron nitride

Supported metal catalysts are pivotal in the chemical industry, but achieving high activity while maintaining atomically dispersed status to maximize atom efficiency under harsh conditions remains a formidable challenge. In this study, we present a synthetic strategy to enhance the stability of ceria-supported Pt catalysts by coating them with an inert layer of boron nitride (Pt1/CeO2@BN). The BN layer serves to stabilize and modulate the dispersion and electronic state of Pt species, as well as the oxygen vacancy concentration of CeO2. Consequently, the Pt1/CeO2@BN catalyst maintained the atomically dispersed status of Pt species under high-temperature oxidative (900 °C for 3.5 h in air) and reductive (1000 °C for 1 h in H2) conditions and increased the turnover frequency for CO oxidation by four times at 140 °C. Our work offers a valuable strategy to enhance the thermal stability of supported metal catalysts under harsh reaction conditions.

Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 104 s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device’s reliability for gasistor applications.

The influence of CeO2 different morphologies effects on hydrodeoxygenation for guaiacol on Ni/CeO2 catalysts

Catalytic hydrodeoxygenation (HDO) is an effective way to produce high–value products from lignin-derived phenolic compounds. In this work, three different morphologies of Ni/CeO2 catalysts (amorphous, cubic, and rod-shaped) have been prepared through the conventional wet impregnation method. They can be used for the HDO of guaiacol to prepare cyclohexanol, an important chemical raw material. The influence of different morphologies of CeO2 on catalytic activity was explored. The research results indicate that Ni/CeO2–r catalysts with rod-shaped structures exhibit excellent catalytic properties. As a result, a 100 % conversion rate and 96.9 % cyclohexanol yield were achieved on the Ni/CeO2–r catalyst at 240 °C. The catalytic performance of the three catalysts follows this order: Ni/CeO2–r (rod-shaped) > Ni/CeO2–c (cubic) > Ni/CeO2–p (amorphous). The results of Raman and XPS indicate significant differences in the surface oxygen vacancy in catalysts with different morphologies. The Ni/CeO2–r catalyst has the highest oxygen vacancy concentration and defect. In addition, Ni/CeO2–r also has the largest specific surface area (SBET) and the highest nickel dispersion, and forms more Ni0 because of the strong interaction of Ni species and CeO2 support. Therefore, Ni/CeO2–r exhibits the most excellent catalytic performance for the hydrogenation of guaiacol than the other two catalysts. Moreover, the cycling activity test was also investigated over the Ni/CeO2–r catalyst. After five cycles, the conversion rate of guaiacol and the yield of cyclohexanol hardly decrease. This work provides vital ideas for the development of higher-activity, higher-stability, and low-cost catalysts for the conversion of lignin-derived phenolic compounds in the future.

Design of TiO2-X nanotubes with controllable oxygen vacancy concentration and performance study of selective oxidation of benzyl alcohol

Design of TiO2-X nanotubes with controllable oxygen vacancy concentration and performance study of selective oxidation of benzyl alcohol

Defect engineering of charge transport and photovoltaic effect in BiFeO3 films

Bismuth ferrite (BiFeO3) is an attractive multiferroic material, extensively explored in photoferroelectric investigations. However, its applications are hindered by the high leakage current, requiring precise control of charge transport properties. Defect engineering has emerged as a promising strategy to address this issue: controlling the defect chemistry, particularly oxygen vacancies, is key to tuning the electrical properties. This study investigates the influence of 5% ▪ - and 2% ▪ -doping on the dark and light-induced charge transport properties of polycrystalline BiFeO3 films. Our results demonstrate that ▪ reduces dark conductivity by decreasing oxygen vacancy concentration with no change in the physical nature of the charge transport mechanism. In contrast, ▪ modifies the charge transport mechanism, increasing low-field (E < 100kVcm-1) dark conductivity while drastically reducing high-field (E > 250kVcm-1) dark conductivity. This tuning of the defect chemistry is also key to enhance the photovoltages of the bulk photovoltaic effect in BiFeO3. High photoinduced electric fields up to 7kVcm-1 and low photoconductivity values are obtained with ▪ -doping, while high short-circuit photocurrent values are obtained with ▪ -doping.

Different enhancement of Ni doping on La0.3Sr0.7Fe0.9Ti0.1O3-δ electrodes in symmetrical solid oxide cell

Poor catalytic activity is a significant challenge that needs to be addressed to enable the effective use of perovskite electrodes in symmetrical solid oxide cell (SOC). In this study, high-activity Ni ions were doped into the La0.3Sr0.7Fe0.9Ti0.1O3-δ (LSFTi91) perovskite lattice, which endowed the materials with different facilitation effects in different atmospheres. In an oxidizing atmosphere, the introduction of Ni ions enables La0.3Sr0.7Fe0.8Ti0.1Ni0.1O3-δ (LSFTNi811) to exhibit higher conductivity and oxygen vacancy content, which enhances the adsorption and dissociation of gases. When used as symmetrical electrodes in a solid oxide electrolysis cell, the LSFTNi811 symmetric cell presents higher electrolysis performance than LSFTi91 (1.78 A cm−2 vs. 1.57 A cm−2) at 1.5 V and 800 °C. This is the highest level reported for a single-phase perovskite electrode, underlining its excellent catalytic activity. In a reducing atmosphere, although Ni doping weakens the structural stability of the material, a large number of NiFe nanoparticles precipitate the H2 reaction after material decomposition. In this situation, LSFTNi811 achieves better performance than LSFTi91 as a symmetrical electrode for the solid oxide fuel cell both before and after decomposition. Therefore, LSFTNi811 is a promising symmetrical electrode material for SOCs.

Balancing Carrier Dynamics in Oxygen-Vacancy-Tuned Amorphous Ga2O3 Thin-Film Self-Powered Photoelectrochemical-Type Solar-Blind Photodetector Arrays for Underwater Imaging.

Underwater imaging technology plays a pivotal role in marine exploration and reconnaissance, necessitating photodetectors (PDs) with high responsivity, fast response speed, and low preparation costs. This study presents the synergistic optimization of responsivity and response speed in self-powered photoelectrochemical (PEC)-type photodetector arrays based on oxygen-vacancy-tuned amorphous gallium oxide (a-Ga2O3) thin films, specifically designed for solar-blind underwater detection. Utilizing a low-cost one-step sputtering process with controlled oxygen flow, a-Ga2O3 thin films with varying oxygen vacancy (VO) concentrations are fabricated. By balancing the trade-offs among electrocatalytic reactions, charge transfer, carrier recombination, and trapping, both the responsivity and response speed of a-Ga2O3-based self-powered PEC-PDs are simultaneously improved. Consequently, the optimized PEC-PDs demonstrated exceptional performance, achieving a responsivity of 33.75mA W-1 and response times of 12.8ms (rise) and 31.3ms (decay), outperforming the vast majority of similar devices. Furthermore, a pronounced positive correlation between anomalous transient photocurrent spikes and the concentration of VO defects is observed, offering compelling evidence for VO-mediated indirect recombination. Finally, the proof-of-concept solar-blind underwater imaging system, utilizing an array of self-powered PEC-PDs, demonstrated clear imaging capabilities in seawater. This work provides valuable insight into the potential for developing cost-effective, high-performance a-Ga2O3 thin-film-based PEC-PDs for advanced underwater imaging technology.

Tuning ferroelectric domains and polarization properties of flexible BiFeO3 thin films by phase transition engineering

In the present investigation, thin films of flexible (Bi1-xSmx)(Fe0.95Mn0.05)O3 (denoted as BSFM0, BSFM4, BSFM8, and BSFM12 for x=0 %, 4 %, 8 %, and 12 %, respectively) were synthesized on metallic Ni-Cr substrates via the sol-gel technique. A comprehensive examination was conducted to elucidate the influence of varying concentrations of Sm3+ substitution on the phase constitution, oxygen vacancy concentration, and leakage behavior of the (Bi1-xSmx)(Fe0.95Mn0.05)O3 films. Utilizing X-ray diffraction (XRD) and Raman spectrometry, it was ascertained that all films exhibited a composite structure comprising orthorhombic (Pnma) and rhombohedral (R3c) phases. An augmentation in Sm3+ doping led to a non-monotonic variation in the R3c phase content, initially increasing and subsequently decreasing, while the nonpolar Pnma phase demonstrated a progressive enhancement. The distorted R3c phase was found to promote the flipping of the domain architecture, thereby augmenting the polarization attributes. Notably, at a Sm doping level of 4 %, the maximum polarization (Pmax) attained was 95 μC/cm2, with a remnant polarization (Pr) of 78 μC/cm2. The incorporation of a judicious amount of Sm was observed to curtail film leakage and decelerate the aging phenomenon. The compositional stability of this doping level was evaluated across a frequency spectrum of 0.1–12 kHz and a temperature gradient of 25–200 °C, revealing no propensity for degradation under conditions of polarization, a holding duration of 104 s, or fatigue scenarios involving a curvature of 5 mm and 108 switching cycles subjected to 103 instances of bending. These findings provide innovative insights for the development of next-generation lead-free transducer apparatus and flexible information storage mediums.

Interface characteristic and performance optimization mechanism for HfOx-based RRAM devices

The HfOx-based resistive random access memory (RRAM) is extensively researched for next-generation nonvolatile memory because of its high integration and excellent compatibility with CMOS technology. The interfacial characteristics, including interface state and series resistance, which impact the HfOx-based RRAM performance. However, a quantitative analysis about interface state and series resistance at metal/hafnium oxide (HfOx) interface is still scarce. The interface state and series resistance are related to the interfacial layer and oxygen vacancy concentration. In this work, we use the Ti/HfOx/Pt structural RRAM device with different oxygen contents to control the interfacial layer and oxygen vacancy concentration at metal/HfOx interface. The series resistance at the HfOx/Pt interface in the low resistance state (LRS) is obtained using the Schottky model, while the interface state density and time constant at the Ti/HfOx interface in the high resistance state (HRS) are extracted by frequency dependence of conductance. The results indicate that the device uniformity is improved by reducing the LRS series resistance and HRS interface state density. Furthermore, the device endurance in the HRS deteriorates with the decrease of the interface state time constant. Overall, the RRAM device performance is optimized by modulating the series resistance, interface state density, and time constant.

Strain-oxygen vacancies coupling in topotactic (La,Sr)CoO3-δ thin films

Oxygen defect engineering is a widely used approach for tuning physical properties in oxides. Multivalent transition metal oxide La0.7Sr0.3CoO3-δ (LSCO) shows oxygen vacancy-driven metal-to-insulator transition (MIT) due to topotactic phase transition and its high oxygen vacancy tolerance. Here, we introduce strain as a new degree of freedom to study the strain-oxygen vacancy coupling effects and elucidate its impact on the electronic property in oxygen-deficient LSCO epitaxial thin films grown on SrTiO3 (100) single crystal. By combining the experimental results with density functional theory plus U (DFT+U) calculations, we reveal that 2.1 % in-plane tensile strain can stabilize the insulating state of LSCO with a surprisingly low concentration of oxygen vacancies, <0.5 %. This study reveals that the MIT in LSCO is governed by the combination of oxygen vacancies and strain, offering the potential for additional tuning knob of the material's electronic properties.

Enhancing Ce-Co interfacial effects via special petal-pollen morphology construction to achieve efficient toluene removal

Interfacial effects provide an effective means to construct multi-metal interactions and design efficient catalysts for VOCs purification, while morphology construction remains a common tactic to optimize the efficiency of these catalysts. In the present work, the Co-Ce bimetal interface was effectively constructed by morphological regulation, and the coupling of the interfacial effect modulation and the special morphological structure was realized, resulting in superior catalyst performance. Among the series catalysts, CeCoOx-H demonstrated the optimized activity with 90 % toluene conversion at 250 °C while maintaining good results in a 50 h stability test. And the systematic characterization revealed that the structural changes and interfacial effects induced by morphological modulation would increase the structural defects, improving surface reactive oxygen and oxygen vacancy content, oxygen storage capacity, oxygen motivity and low-temperature reductivity, which account for promising catalytic performance of CeCoOx-H. Furthermore, in-situ DRIFTS revealed the following decomposition routes for toluene on the CeCoOx-H catalyst surface: toluene → benzyl alcohol → benzaldehyde → benzoate → phenol → maleate → acetate → formate → carbon dioxide. In particular, the decomposition of benzaldehyde and benzoate may be the key steps in toluene catalytic oxidation. Also, the characterization unveiled that the rich adsorption sites brought by the interfacial construction are not negligible in boosting the catalytic performance.

Improvement of the Stability of Quantum-Dot Light Emitting Diodes Using Inorganic HfOx Hole Transport Layer.

One of the major challenges in QLED research is improving the stability of the devices. In this study, we fabricated all inorganic quantum-dot light emitting diodes (QLEDs) using hafnium oxide (HfOx) as the hole transport layer (HTL), a material commonly used for insulator. Oxygen vacancies in HfOx create defect states below the Fermi level, providing a pathway for hole injection. The concentration of these oxygen vacancies can be controlled by the annealing temperature. We optimized the all-inorganic QLEDs with HfOx as the HTL by changing the annealing temperature. The optimized QLEDs with HfOx as the HTL showed a maximum luminance and current efficiency of 66,258 cd/m2 and 9.7 cd/A, respectively. The fabricated all-inorganic QLEDs exhibited remarkable stability, particularly when compared to devices using organic materials for the HTL. Under extended storage in ambient conditions, the all-inorganic device demonstrated a significantly enhanced operating lifetime (T50) of 5.5 h, which is 11 times longer than that of QLEDs using an organic HTL. These results indicate that the all-inorganic QLEDs structure, with ITO/MoO3/HfOx/QDs/ZnMgO/Al, exhibits superior stability compared to organic-inorganic hybrid QLEDs.

Near-infrared light enhanced oxygen vacancies on metal organic frameworks through photothermal effect for peroxydisulfate activation to remove organic pollutants

Peroxydisulfate (PDS)-based advanced oxidation processes (AOPs) are a promising strategy for addressing the challenges of contamination in aqueous environment. Taking advantage of solar energy based photocatalysis showed great potential on PDS activation for pollution control. However, the limited usage of near-infrared (NIR) region by photocatalysts restricted the realization of using full sunlight energy. Herein, zeolitic imidazolate frameworks derived materials (ZNC) with oxygen vacancies (VO) are designed and obtained, which can efficiently activate PDS under NIR light due to the photothermal effect, exhibiting superior carbamazepine (CBZ) degradation performance (84 % of CBZ within 60 min). Further quenching tests and electron paramagnetic resonance detection demonstrate that the photothermal effect can enhance the concentration of oxygen vacancies on the surface and facilitate charge separation of ZNC, which effectively activate PDS to generate O2−, 1O2, and h+, thus significantly enhancing the photocatalytic degradation of CBZ. Additionally, combining the results of intermediates analysis and DFT calculation, a systematic CBZ degradation pathway by two tracks is proposed. Moreover, the overall potential risks of CBZ are expected to be weakened in the ZNC/PDS/NIR process through photothermal catalytic degradation. Thus, a new strategy is provided for optimizing the use of solar energy to boost PDS activation for water purification.

Sulfur vacancies-engineered CaIn2S4 microspheres for enhanced photocatalytic organic pollutant and antibiotic removal

It is an interesting research topic on construction of defect- rich structures to enhance the performance of photocatalysts. In this study, CaIn2S4 photocatalyst containing sulfur vacancy was successfully synthesized using a straightforward solvothermal method. The sulfur vacancy concentration in CaIn2S4 was controlled by adjusting the amount of thioacetamide added during preparation. Among the prepared samples, CaIn2S4-10 sample with excellent photocatalytic performance exhibits superior degradation efficiency (98.2 %) within 50 minutes when the initial methyl orange (MO) concentration was 20 mg/L. Similarly, it shows the highest degradation performance (94 %) against the antibiotic tetracycline hydrochloride (TCH) (20 mg/L). The phase structure, surface element composition, optical properties and other characteristics of the prepared samples were systematically investigated. The findings demonstrate that the CaIn2S4-10 sample exhibits a decreased band gap width and a negatively shifted conduction band position, which enhances its reduction ability and improves its photocatalytic activity.

Effects of In-Air Post Deposition Annealing Process on the Oxygen Vacancy Content in Sputtered GDC Thin Films Probed via Operando XAS and Raman Spectroscopy.

We investigate the ionic mobility in room-temperature RF-sputtered gadolinium doped ceria (GDC) thin films grown on industrial solid oxide fuel cell substrates as a function of the air-annealing at 800 and 1000 °C. The combination of X-ray diffraction, X-ray photoelectron spectroscopy, operando X-ray absorption spectroscopy, and Raman spectroscopy allows us to study the different Ce3+/ Ce4+ ratios induced by the post growth annealing procedure, together with the Ce valence changes induced by different gas atmosphere exposure. Our results give evidence of different kinetics as a function of the annealing temperature, with the sample annealed at 800 °C showing marked changes of the Ce oxidation state when exposed to both reducing and oxidizing gas atmospheres at moderate temperature (300 °C), while the Ce valence is weakly affected for the 1000 °C annealed sample. Raman spectra measurements allow us to trace the responses of the investigated samples to different gas atmospheres on the basis of the presence of different Gd-O bond strengths inside the lattice. These findings provide insight into the microscopic origin of the best performances already observed in SOFCs with a sputtered GDC barrier layer annealed at 800 °C and are fundamental to further improve sputtered GDC thin film performance in energy devices.

Engineering Carrier Density and Effective Mass of Plasmonic TiN Films by Tailoring Nitrogen Vacancies.

The introduction of nitrogen vacancies has been shown to be an effective way to tune the plasmonic properties of refractory titanium nitrides. However, its underlying mechanism remains debated due to the lack of high-quality single-crystalline samples and a deep understanding of electronic properties. Here, a series of epitaxial titanium nitride films with varying nitrogen vacancy concentrations (TiNx) were synthesized. Spectroscopic ellipsometry measurements revealed that the plasmon energy could be tuned from 2.64 eV in stoichiometric TiN to 3.38 eV in substoichiometric TiNx. Our comprehensive analysis of electrical and plasmonic properties showed that both the increased electronic states around the Fermi level and the decreased carrier effective mass due to the modified electronic band structures are responsible for tuning the plasmonic properties of TiNx. Our findings offer a deeper understanding of the tunable plasmonic properties in epitaxial TiNx films and are beneficial for the development of nitride plasmonic devices.

Atmosphere Induces Tunable Oxygen Vacancies to Stabilize Single‐Atom Copper in Ceria for Robust Electrocatalytic CO2 Reduction to CH4

Electrochemical carbon dioxide reduction (ECO2RR) shows great potential to create high‐value carbon‐based chemicals, while designing advanced catalysts at the atomic level remains challenging. The ECO2RR performance is largely dependent on the catalyst microelectronic structure that can be effectively modulated through surface defect engineering. Here, we provide an atmosphere‐assisted low‐temperature calcination strategy to prepare a series of single‐atomic Cu/ceria catalysts with varied oxygen vacancy concentrations for robust electrolytic reduction of CO2 to methane. The obtained Cu/ceria catalyst under H2 environment (Cu/ceria‐H2) exhibits a methane Faraday efficiency (FECH4) of 70.03% with a turnover frequency (TOFCH4) of 9946.7 h−1 at an industrial‐scale current density of 150 mA cm−2 in a flow cell. Detailed studies indicate the copious oxygen vacancies in the Cu/ceria‐H2 are conducive to regulating the surface microelectronic structure with stabilized Cu+ active center. Furthermore, density functional theory calculations and operando ATR‐SEIRAS demonstrate that the Cu/ceria‐H2 can markedly enhance the activation of CO2, facilitate the adsorption of pivotal intermediates *COOH and *CO, thus ultimately enabling the high selectivity for CH4 production. This study presents deep insights into designing effective electrocatalysts for CO2 to CH4 conversion by controlling the surface microstructure via the reaction atmosphere.

Atmosphere Induces Tunable Oxygen Vacancies to Stabilize Single-Atom Copper in Ceria for Robust Electrocatalytic CO2 Reduction to CH4.

Electrochemical carbon dioxide reduction (ECO2RR) shows great potential to create high-value carbon-based chemicals, while designing advanced catalysts at the atomic level remains challenging. The ECO2RR performance is largely dependent on the catalyst microelectronic structure that can be effectively modulated through surface defect engineering. Here, we provide an atmosphere-assisted low-temperature calcination strategy to prepare a series of single-atomic Cu/ceria catalysts with varied oxygen vacancy concentrations for robust electrolytic reduction of CO2 to methane. The obtained Cu/ceria catalyst under H2 environment (Cu/ceria-H2) exhibits a methane Faraday efficiency (FECH4) of 70.03 % with a turnover frequency (TOFCH4) of 9946.7 h-1 at an industrial-scale current density of 150 mA cm-2 in a flow cell. Detailed studies indicate the copious oxygen vacancies in the Cu/ceria-H2 are conducive to regulating the surface microelectronic structure with stabilized Cu+ active center. Furthermore, density functional theory calculations and operando ATR-SEIRAS demonstrate that the Cu/ceria-H2 can markedly enhance the activation of CO2, facilitate the adsorption of pivotal intermediates *COOH and *CO, thus ultimately enabling the high selectivity for CH4 production. This study presents deep insights into designing effective electrocatalysts for CO2 to CH4 conversion by controlling the surface microstructure via the reaction atmosphere.

Insights into the role of A/B-site substitution in chemical looping gasification of cotton stalk for enhanced syngas production over La-Co-O based perovskite oxygen carriers

Biomass chemical looping gasification (BCLG) is an emerging technology for efficient and clean utilization of cotton stalk (CS) to produce high-quality syngas. Among various oxygen carriers, perovskite oxides are holding an ever-increasing position in BCLG due to their unique structural properties and compositional flexibilities. However, research on perovskite-type oxygen carriers mostly focused on Fe-based oxides, and there is little in-depth investigation of Co-based perovskite and the role of A/B site substitution in the BCLG process. Herein, the LaCoO3 perovskite is selected as the basic oxygen carrier, and Sr, Fe are further doped on the A/B-site to form LaCo1-xFexO3 (x = 0, 0.2, 0.4, 0.6, 0.8, 1) and La1-ySryCoO3 (y = 0, 0.2, 0.4, 0.6, 0.8) series. Effects of perovskite type, gasification temperature, steam volume fraction and oxygen carrier mass fraction of the BCLG performance are investigated. Results indicate that La0.6Sr0.4CoO3 and LaCo0.2Fe0.8O3 exhibit enhanced syngas production with the maximum of 1.304 m3/kg and 1.188 m3/kg, respectively, and outstanding cyclic stability at optimal reaction conditions. Further characterizations including H2-TPR, XPS and EPR analysis reveal that Sr substitution facilitate the formation of oxygen vacancies and adsorbed oxygen species, while Fe doping leads to the increasing concentration of oxygen vacancies and surface lattice oxygen species. Combined with the experimental and characterization results, it is deduced that the oxygen vacancies which promote the adsorption of reactants and accelerate the migration of bulk lattice oxygen, play the key role in the enhanced BCLG performance.

High temperature electropalsticity in Aermet100 steel by decoupling electron wind effect

Aermet100 ultra-high strength steel (UHSS) is one of the highest strength-plasticity-matched metallic materials. It is widely used in critical load-bearing components in aerospace and weaponry. Compared to traditional forging processes, electropulsing assisted forming technology significantly enhances manufacturing efficiency and forming limits. Particularly in the forming of hard-to-deform materials into complex structures, it demonstrates significant application potential. However, quantitative studies on the decoupling of electron wind effects during high-temperature deformation and their impact on microstructural evolution, deformation mechanisms, and mechanical properties remain few reported, resulting in limiting the ability to select optimal process parameters in electropulsing assisted forming technology to precisely control material structure and properties. In this paper, the impact of varying degrees of electron wind effects on flow stress through high-temperature compression tests was investigated. The evolution of the microstructure was analyzed in conjunction with the thermodynamic and kinetic mechanisms of recrystallization. Moreover, the hitherto unexplained relationship between the activation of slip systems and texture components in Aermet100 UHSS is examined. Results indicate that with the enhancement of the electron wind effect, the flow stress of Aermet100 UHSS is reduced by 59.4 %. The electron wind effect not only reduces the activation energy for recrystallization but also enhances vacancy concentration, dislocation climb diffusion flux, and driving force, thus promoting continuous dynamic recrystallization. Furthermore, as the intensity of the electron wind effect increases to 0.85 Ew and above, S and Brass textures are observed for the first time. It is notable that the Dillamore texture, Brass texture, and S texture respectively activate specific slip systems (1‾ 10)[11 1‾], (0 1‾1‾)[11 1‾] and (110)[1‾ 11‾] during the hot deformation process of Aermet100 UHSS. This investigation sheds new insight into tailoring high temperature electroplasticity by regulating electron wind effects.