Electrical measurements have been made of the Bridgman-grown degenerate magnetic semiconductors Sn 1- x Mn x Te ( x <19 at.%) over a temperature range from 300 to 2 K. The magnetic impurities, Mn ions, have an effect on carrier transport in two different ways. First, they act simply as ionized impurity scattering centers giving rise to a decrease in the Hall mobility; the exponent n in the temperature dependence of the Hall mobility in the range 77–300 K, µ∝ T - n , and the residual resistivity at 4.2 K, ρ 4.2 , are affected appreciably by the magnetic impurity concentration. Second, the localized spins on the Mn ions come into play at low temperatures, which align ferromagnetically at an ordering temperature. As a result, the Hall effect consists of the ordinary component due to the Lorentz force and the anomalous one arising from spin dependent scattering of conduction carriers through a spin-orbit coupling; the second component is found to be strongly temperature-dependent, R 1 ∝ T 2 , in agreement with the Voloshinskii model.
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