Sn Content Research Articles

Environmentally Friendly Pathway to Kesterite Nanoparticles with Controlled Sn Content: An In-Depth Study of Magnetic and Optical Properties

Environmentally Friendly Pathway to Kesterite Nanoparticles with Controlled Sn Content: An In-Depth Study of Magnetic and Optical Properties

Chelating Dual Interface for Efficient and Stable Crystal Growth and Iodine Defect Management in Sn-Pb Perovskite Solar Cells.

Suppressing Sn2+ oxidation and rationally controlling the crystallization process of tin-lead perovskite (Sn-Pb PVK) films by suitable bonding methods have emerged as key approaches to achieving efficient and stable Sn-Pb perovskite solar cells (PSCs). Herein, the chelating coordination is performed at the top and bottom interfaces of Sn-Pb PVK films. The chelation strength is stronger toward Sn2+ than Pb2+ by introducing oligomeric proanthocyanidins (OPC) at the bottom interface. This difference in chelation strength resulted in a spontaneous gradient distribution of Sn/Pb within the perovskite layer during crystallization, particularly enhancing the enrichment of Sn2+ at the bottom interface and facilitating the extraction and separation of photogenerated charge carriers in PSCs. Simultaneously, this top-down distribution of gradually increasing Sn content slowed down the crystallization rate of Sn-Pb PVK films, forming higher-quality films. On the top interface of the PVK, trifluoroacetamidine (TFA) was used to inhibit the generation of iodine vacancies (VI) through chelating with surface-uncoordinated Pb2+/Sn2+, further passivating defects while suppressing the oxidation of Sn2+. Ultimately, the PSCs with simultaneous chelation at both top and bottom interfaces achieved a power conversion efficiency (PCE) of 23.31% and an open-circuit voltage (VOC) exceeding 0.90 V. The stability of unencapsulated target devices in different environments also improved.

Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga2O3 single crystal

This paper studied the structural, optical, electrical, and dielectric properties of the undoped and 0.05 mol% Sn-doped β-Ga2O3 single crystals through comprehensive characterizations by x-ray diffraction (XRD), Raman scattering, Optical transmittance spectroscopy, x-ray photoelectron spectroscopy (XPS), Ultraviolet photoelectron (UPS) spectroscopy, and dielectric measurements. The optical bandgap decreases as Sn content increases. The results of XPS showed that Sn atoms were successfully added to the host β-Ga2O3 crystal. The position of the Fermi level of 0.05 mol% Sn-doped β-Ga2O3 is calculated to be 2.56 eV above the valence band and 1.85 eV beneath the conduction band. Also, the computed value of the work function of 0.05% mole Sn-doped β-Ga2O3 is 4.53 eV. AC conductivity increases, while dielectric loss and dielectric constant decrease with increasing frequency.

Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods

Thin films of germanium-tin (GeSn) alloy with Sn content well above its equilibrium solubility limit in Ge are produced using both remote plasma-enhanced chemical vapor deposition (RPECVD) directly on silicon substrates and ion implantation of Sn into Ge. For RPECVD, the growth temperature of 302 °C resulted in fully relaxed GeSn alloys with high defect density, principally threading dislocations related to the large lattice mismatch between Si and GeSn. For the implantation case, pulsed laser melting was used to melt and crystallize the GeSn layer on a time scale of a few tens of nanoseconds. The resulting GeSn layers were also relaxed and defective, presumably again as a result of lattice mismatch with the underlying Ge lattice. However, the nature of the defects was quite different to the RPECVD method, whereby the line defects were not threading dislocations but stackinglike defects, which developed into arrays of these defects in the high Sn content region close to the surface. For the purpose of comparing RPECVD and ion-implantation methods, alloy films of similar thickness (400–450 nm) and Sn content (4.5–6.5 at. %) were examined. Film parameters (thickness, Sn content, Sn solubility, and segregation), as well as film quality and defect structures, were examined for both fabrication methods using several analytical techniques. This comparison provided us with a better physical understanding of our GeSn films and will help inform future growth/fabrication strategies targeted at minimizing defects formed in the GeSn films for the realization of optoelectronic devices.

Structure and magnetic properties of SmCo4.5Cu0.3Sn0.16Ga0.04 ribbons melt-spun at 10–40 m/s

The anisotropic Nd-Fe-B magnets prepared by as-spun ribbons using hot-pressing and hot-deformation methods have been commercialized. However, the Sm-Co magnets face challenges in obtaining strong c-axis deformation textures due to the absence of a low-melting intergranular phase to facilitate grain deformation. After simultaneously adding gradient low-melting metals of Cu, Sn, and Ga to SmCo5 alloy, SmCo4.5Cu0.3Sn0.16Ga0.04 ribbons were prepared by melt-spinning at 10–40 m/s. These ribbons comprise the Sm(Co, M)5 main phase, Sn-rich Sm2(Co, M)7 grain boundary phase, and Sm117Co55.58Sn115.94-type particulate phase. Notably, the ribbons melt-spun at 30 m/s contain the highest Cu, Sn, and Ga content in the grain boundary phase, making them most suitable for producing hot-pressed and hot-deformed magnets. Additionally, the ribbons melt-spun at 20 m/s have a maximum coercivity of 26.4 kOe, while those melt-spun at 40 m/s have the highest magnetization of 61.6 emu/g.

Effects of normalizing process on microstructure, texture, and precipitates of Sn bearing oriented silicon steel

Low temperature heating process of the slab has become the mainstream process for producing high quality oriented silicon steel due to its environmental protection, low cost, and high yield. For this process, the number of inhibitors is less and the size is large, resulting in insufficient inhibition, coarsen grains during primary recrystallization, and insufficient driving force for secondary recrystallization, which reduces the magnetic properties of the product. These shortcomings can be improved by optimizing the inhibitors and normalizing processes. The effects of normalizing processes on the microstructure, texture, and precipitations of low-temperature oriented silicon steel containing Sn were studied by OM, SEM, TEM, and EBSD with Fe–3%Si hot-rolled plate as initial material. The experimental results show that the sample has the best performance in terms of microstructure, texture, and precipitations with the two-stage boiling water cooling normalizing process that the heating temperature is 1150 °C, and the normalizing intermediate temperature is 850 °C. With the above parameters, the microstructure is inhomogeneous along thickness. There are more {111}<112> textures, which are favorable to the growth of Goss texture. The proportion of high energy grain boundary reached 54.2%. The precipitates are significantly refined, which enhances the ability to inhibit primary recrystallization. The sub-surface thickness of the hot rolled plate increases from 40.6% to 62.1% with increasing Sn content from 0.01% to 0.11%. The degree of tin segregation at grain boundary increases with the increase of normalizing temperature and the decrease of medium soaking temperature.

Influence of Sn addition on the phase formation, microstructure and magnetic properties of Mn-Bi alloy ribbons

In this work, the phase formation, microstructure and magnetic properties of Mn54Bi46−xSnx (x = 0, 1, 2, 3 and 4) alloy ribbons fabricated by melt-spinning method combined with annealing were investigated. The fraction of the low-temperature MnBi phase (LTP-MnBi) depends not only on the Sn concentration but also on the annealing regime. In the as-quenched ribbons, the fraction of the LTP-MnBi decreases monotonically from 38.1 to 21.1 wt% when the Sn concentration increases from 0 to 4 at%. Meanwhile, the fraction of this phase increases significantly from 69.0 to 83.2 wt% when the Sn concentration changes from 0 to 2 at% and tends to decrease upon further increasing the Sn concentration to 4 at% for the ribbons annealed at 250 °C for 16 h. Saturation magnetization, Ms, of the annealed samples changes consistently with the fraction of LPT-MnBi and reaches a maximum value of 70.4 emu/g in the sample with Sn concentration of 2 at%. The addition of Sn also aids in refining the grains, leading to an improvement in the hard magnetic properties of the material. The coercivity, Hc, of the alloy ribbons tends to increase as the Sn concentration increases and changes non-monotonically with annealing time. The maximum energy product, (BH)max, reached 5.5 MGOe in the sample with x = 2, demonstrating the promise of Mn-Bi based alloys in practical applications. The density functional theory calculations were also performed to clarify the effect of Sn addition. The calculated results confirmed the decrease in the lattice parameters with Sn substitution in the experimental data. The total magnetic moment per formula unit and the evaluated saturation magnetization are 3.62 µB and 78.28 emu/g, respectively, for Sn substitution of ∼3.1 at%. (Although the total magnetic moment decrease with doping, the saturation magnetization per unit mass could be improved.)

A combined theoretical and experimental study on vertically aligned ZnO and ZnO: Sn

Vertically aligned ZnO and Sn (5, 10 v/v%) doped ZnO microrods were produced using chemical bath deposition technique on ZnO seed layers fabricated on glass substrates by spin coating method. The thickness of the seed layer is 365 nm and the length of the ZnO and ZnO:Sn rods are in the range of 1–5 μm. The length of the rods decreases with increasing Sn concentration. The structural, morphological, elemental compound, electrical and optical properties of ZnO and ZnO:Sn films were investigated using x-ray powder diffraction, field emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, two probe method and UV–Vis absorption spectroscopy, respectively. The electronic structure of ZnO and Sn doped ZnO is calculated depending Density Functional Theory thanks to the WIEN2k program. Based on experimental and theoretical calculations, the band gap energy decreases with increasing Sn concentration. The band gap energy of seed layer, pure ZnO, Sn (5%) and Sn (10%) doped ZnO films was estimated as 3.27 eV, 3.18 eV, 3.14 eV and 3.12 eV, respectively. The band gap energy of Sn (1 atom) and Sn (2 atom) doped ZnO calculated theoretically was found as 0.392 eV and 0.245 eV, respectively. The Fermi Energy shifting towards the conduction band was observed upon Sn doping. Sn (5%) doped ZnO film shows the highest electrical conductivity although its band gap energy is higher than that of Sn (10%). The highest conductivity is attributed to the lowest dislocation density and less oxygen vacancies in the structure.

Catalytic Dehydrogenation on Ultradisperse Sn-Promoted Ir Catalysts Supported on MgAl2O4 Prepared by Different Techniques

Ir and IrSn catalysts with different Sn contents (0.5, 0.7 and 0.9 wt%) were prepared using MgAl2O4 supports synthesized using two different techniques (the citrate–nitrate combustion and coprecipitation methods). Both supports, with a spinel structure, presented low acidity and good textural properties. However, the support prepared by coprecipitation had higher specific surface area and pore volume than the one prepared by combustion, which would favor the dispersion of the metals to be deposited. Likewise, during the preparation of the catalytic materials, a very good interaction was achieved between the metals and both supports, which was confirmed by the presence of sub-nanometer atomic clusters in the mono- and bimetallic catalysts. Regarding the catalytic properties, while the monometallic Ir/MgAl2O4 samples lead to a very low conversion of n-butane and a selectivity towards hydrogenolysis products, the addition of Sn to Ir increases the conversion, decreases hydrogenolysis and therefore sharply increases the selectivity towards the different butenes. Catalysts with higher Sn loadings present better catalytic behavior. One of the roles of the Sn promoter would be to geometrically modify the Ir clusters, drastically decreasing the hydrogenolytic activity. This effect, added to the strong electronic modification of the Ir sites by the action of Sn, with probable Ir-Sn alloy formation, is responsible for the high catalytic performance of these bimetallic catalysts.

Effect of Co-addition of Sn, Traces of RE and Ca on the Mechanical and Micro Structural Properties of As-cast AZ80 Alloy

In this study, the effect of co-addition of tin (0, 6 and 9 wt.%), cerium (0, 0.3 and 0.6 wt.%), gadolinium (0, 0.6 and 0.9 wt.%) and calcium (0, 0.6 and 0.9 wt.%) on the mechanical and microstructural properties of AZ80 magnesium alloy is investigated. The results indicate that the mechanical properties are improved for all the as-cast alloys when compared to base alloy except for one alloy which is due to the presence of Mg-Sn-Ca phase in high volume fraction. Also, it is found that the existence of Al2Ca, Mg2Ca, Al2RE, MgSnRE and Mg2Sn phases have a significant impact on the mechanical and microstructural characteristics of the as-cast AZ80 alloys. It is observed that without the addition of Sn content, the best room temperature tensile properties are obtained for the alloy containing 1.5 wt.% of RE and 0.9 wt.% of Ca. With the addition of Sn, it is found that the best room temperature tensile properties are obtained for the alloy containing 6 wt.% of Sn, 0.9 wt.% of RE and 0.5 wt.% of Ca.

Effect of Sn addition on mechanical, wear, and electrochemical properties of Ti-Al-Sn alloys

This study aims to investigate the effect of Sn content on the structural, mechanical, wear, and electrochemical properties of Ti-6Al-xSn (x = 3.5–17.5, wt%) alloys fabricated by powder metallurgy method. The results showed that the microhardness generally decreased with increasing Sn content, although there was an unusual increase in microhardness in the alloy with 10.5 wt% Sn. Depending on the Sn content, various phases such as α-Ti, Ti3Sn, and Ti3Al indicated complex phase formations. The flexural and tensile strengths increased up to 10.5 wt% Sn content, but the strengths reduced above this level. The maximum values for flexural and tensile strengths were obtained as 270 MPa and 125.8 MPa, respectively. With increasing Sn content, the fracture surfaces shifted from cleavage mode to mixed brittle and ductile failure modes. The wear tests were conducted in two different environments: dry and wet conditions. Considering dry sliding conditions, the lowest specific wear rate was obtained as 0.85 × 10−6 mm3/N·m in the alloy coded 3.5Sn at a sliding distance of 1500 m. On the other hand, the highest wear was measured as 2.89 × 10−6 mm3/N·m in the 17.5Sn coded sample at a sliding distance of 6000 m in wet conditions. The wear results demonstrated a relationship between mechanical properties and wear resistance, which was influenced by the existence of porosity. The Ti-6Al-7Sn alloy exhibited the best corrosion resistance with a 2.22 × 10−7 icorr value, while the one with Ti-6Al-17.5Sn alloy showed the worst performance with a 9.71 × 10−6 icorr value.

Effect of Sn addition on the microstructure and corrosion behavior of dilute wrought Mg-Zn-Ca series alloys

The effect of Sn alloying (0.5, 1.0, 2.0 wt%) on microstructure and corrosion behavior of dilute Mg-2Zn-xSn-0.5Ca rolled sheets is illuminated. The corrosion resistance first increases and then decreases with raising Sn content. The alloy with 1 wt% Sn shows the lowest corrosion rate of ∼2.1 mm/y, decreased by ∼63 % compared with Sn-free alloy. Although nobler MgSnCa phase is formed after alloying, more protective oxide film containing SnO2 is also formed, which effectively hinders localized corrosion. However, at 2 wt% Sn addition, detrimental effect of MgSnCa overwhelms positive effect of Sn on film, thus deteriorating corrosion resistance.

Development and characterization of novel Mg-6Zn-0.6Si-xSn alloys with varying Sn addition

In this study, the role of varying Sn concentration (x = 0, 1, 2, 3 and 4 wt%) on the microstructure and mechanical properties of Mg-6Zn-0.6Si-xSn alloys has been investigated. The type, distribution and volume fraction of the precipitates have been carried out using both scanning electron microscopy (2D) and X-ray tomography (3D). The Mg2Sn phase appeared after addition of 2 wt% Sn. The increase in the compressive strength of the alloy with increase in Sn addition has been attributed to both precipitation strengthening as well as solid solution strengthening.

Characterization and hydrolysis mechanism of soluble Al-Mg-Ga-Sn alloys in hydraulic fracturing applications

To engineer a dissolvable Al-Mg-Ga-Sn aluminum alloy material suitable for multi-stage hydraulic fracturing and sealing tools, an array of alloys was fabricated using high-temperature casting with varying concentrations of Ga and Sn. The compositions were designed such that the ratio of Ga to Sn remained constant at 1. The objective was to examine the influence of Ga and Sn content on the mechanical properties of the alloys and their reactivity with water. Results indicated that with 1.0 wt% of both Ga and Sn, the alloy displayed a ultimate tensile strength (σb) of 182±1 MPa, elongation (δ) of 33.8±0.8 %, reduction of area (φ) of 11.6±0.9 %, yield strength (σSc) of 161±1 MPa, relative compressibility (δ) of 63.0±1.0 %, and relative expansion of the cross-section (φ) of 170.8±0.9 %. Additionally, when subjected to water at 90℃, the alloy achieved a maximum dissolution rate of 3.0±1 g·h-1·cm-2. Upon contact with an aqueous environment, an electrochemical reaction ensues where aluminum atoms in the matrix lose electrons, transforming into Al3+ ions within the solution. Concurrently, Sn2+ and Ga2+ ions migrate to the surface oxide film, substituting Al3+ ions at the grain boundaries, which induces vacancies in the oxide film, reducing its resistance to further ionic penetration and densification loss. This study elucidates the macroscopic process mechanism of the interaction between water-soluble alloys and aqueous media, and proposes a corresponding microscopic mechanism.

Assessment of Heavy Metals and Trace Elements in the Human Milk of Women Living in Latvia and an Evaluation of Influencing Factors.

During lactation, heavy metals and trace elements can be mobilised from the maternal body stores and excreted via human milk. A total of 66 mature human milk samples were collected from lactating women in Latvia between 2016 and 2017 to analyse the content of As, Cd, Pb, Al, Sn, and Ni. Additionally, 50 mature human milk samples were collected between 2022 and 2023 to analyse the content of Cd and Pb. The content of heavy metals and trace elements in human milk was determined using ICP-MS. Only two individual human milk samples contained heavy metals above the method's detection limit-one with an arsenic content of 0.009 mg kg-1 and one with a lead content of 0.047 mg kg-1. The preliminary data show that human milk among lactating women in Latvia contains only insignificant amounts of heavy metals and trace elements. Concern over such content should not be a reason to choose formula feeding over breastfeeding. Nevertheless, heavy metals, trace elements and other pollutants in human milk should be continuously monitored.

Perhitungan Volume Stockpile dan Pengoptimalan Waktu Pengolahan Stockpile 3, 5 dan 6 Terhadap Produksi Alat Gali muat dan Alat Angkut pada TB Primer Batubesi PT Timah Tbk

PT Timah Tbk's Batubesi Primary Large Mine has experienced a significant decline in production in recent years, causing a change in the mining process to stockpile management that is still economical with a grade of 0.2%. This study aims to determine the volume and production of stockpiles 3, 5 and 6, the type of sediment and Sn content of stockpile material and the time required to spend stockpile material 3, 5 and 6 in order to get the optimal time. The method used is a quantitative method by taking cycle time data as much as 30 data and analyzing sample levels using XRF on each stockpile. The results of this study obtained the volume of stockpile 3 material is 132,648.42 m3,, stockpile 5 is 162,570.25 m3, and stockpile 6 is 33,090.19 m3. The calculated machine productivity at stockpile 3 is 42.17 tons/hour, stockpile 5 is 48.11 tons/hour and stockpile 6 is 39.53 tons/hour. The highest Sn content is found in stockpile 6 which is 0.33% with the type of skarn sediment. While the lowest Sn content is found in stockpile 3 which is 0.2% with oxide clay sediment type. In stockpile 5, the Sn content is 0.31% with the type of oxide clay sediment. The remaining volume of stockpile material in stockpiles 3, 5 and 6 can be spent with a time of 2.78 years using 1 unit of excavation equipment and 1 unit of transportation equipment. Optimization is carried out so that the remaining stockpile reserves can be spent within 1.74 years using 1 unit of excavation equipment and 2 units of transport equipment.

Trace element concentrations and chemical zoning of spodumene from magmatic and hydrothermal origins

Spodumene is a major lithium ore mineral mined from granitic pegmatites and can crystallize (1) from magma, (2) from hydrothermal fluid in miarolitic cavities or fracture-filling units, or (3) as a product of petalite breakdown. Although spodumene’s purity influences the economic value of lithium ore, its trace-element geochemistry is not entirely understood. This study investigated 24 unaltered spodumene samples from 21 localities formed through each of these three modes of origin. The chemical zoning of each spodumene sample was characterized using cathodoluminescence (CL), micro-X-Ray fluorescence mapping (µXRF), and/or qualitative laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) line scans, whereas the concentrations of trace elements were quantified using LA-ICP-MS point analyses. Intra-crystalline chemical zoning was present in all three spodumene types as either oscillatory growth bands and/or sector zoning. For the four most abundant transition and post-transition metals analyzed (Fe, Mn, Ga, Sn), the concentrations ranged from below detection to 10510 ppm (Fe), 1850 ppm (Mn), 300 ppm (Ga), 320 ppm (Sn), whereas Rb and Cs were below detection. Magmatic spodumene had the highest mean concentrations of Fe (2345 ppm) and Sn (94 ppm), hydrothermal spodumene had the highest mean concentrations of Mn (641 ppm) and Ga (94 ppm), and spodumene formed from the breakdown of petalite consistently had the lowest mean concentrations, though there was significant overlap in the datasets. In addition, texturally similar spodumene-quartz intergrowths of primary and secondary origins were distinguished via trace-element geochemistry. Principle component analysis of Fe, Mn, Ga, Sn, Ti, and Zn values from all 325 LA-ICP-MS measurements showed discrimination by CL color, as well as color in handsample for gem-varieties of hydrothermal spodumene.

Al-Rich Titanites from Mont Blanc Alpine Fissures: Evidence of Ti-Nb-Y-REE Mobility during Water–Rock Interactions

Titanites can be excellent markers of element transfer in medium-temperature retrograde metamorphism. Euhedral titanites from several alpine fissures from Mont Blanc, particularly those of Périades and Courtes, crystallised at the end of the main quartz stage and are synchronous with the formation of green biotites and albite before chlorite formation. Micro-XRF, SEM, electron probe, and LA-ICP-MS analyses show that these titanites have a wide range of Al2O3 content from 1 to 8%, are dominated by -OH versus F, and have a wide range of Nb (up to 4500 ppm), Y (up to 3000 ppm), Zr (up to 1800 ppm), and Sn (up to 1400 ppm) concentrations. The allanite from the granite, partly destabilised into epidote, is the most likely source of Nb, Y, Zr, Sn, and REE. Titanites are enriched in HREE and show variations in LREE depending on the studied sites. Like quartz, they formed at around 400 ± 20 °C, which is compatible with the formation of green biotites after the destabilisation of granite Fe-Mg silicates. This early stage of fluid circulation, synchronous with the Mont Blanc massif uplift, is therefore marked by the titanite formation at the transition between the biotite and chlorite stability fields.

Room Temperature Lattice Thermal Conductivity of GeSn Alloys.

CMOS-compatible materials for efficient energy harvesters at temperatures characteristic for on-chip operation and body temperature are the key ingredients for sustainable green computing and ultralow power Internet of Things applications. In this context, the lattice thermal conductivity (κ) of new group IV semiconductors, namely Ge1-xSnx alloys, are investigated. Layers featuring Sn contents up to 14 at.% are epitaxially grown by state-of-the-art chemical-vapor deposition on Ge buffered Si wafers. An abrupt decrease of the lattice thermal conductivity (κ) from 55 W/(m·K) for Ge to 4 W/(m·K) for Ge0.88Sn0.12 alloys is measured electrically by the differential 3ω-method. The thermal conductivity was verified to be independent of the layer thickness for strained relaxed alloys and confirms the Sn dependence observed by optical methods previously. The experimental κ values in conjunction with numerical estimations of the charge transport properties, able to capture the complex physics of this quasi-direct bandgap material system, are used to evaluate the thermoelectric figure of merit ZT for n- and p-type GeSn epitaxial layers. The results highlight the high potential of single-crystal GeSn alloys to achieve similar energy harvest capability as already present in SiGe alloys but in the 20 °C-100 °C temperature range where Si-compatible semiconductors are not available. This opens the possibility of monolithically integrated thermoelectric on the CMOS platform.

Achieving ultrahigh energy storage performance of PBLZST-based antiferroelectric composite ceramics via interfacial polarization engineering

Antiferroelectric (AFE) ceramics can be used in pulse power devices for high power density and fast discharge. Composites are recognized as an effective strategy to combine the benefits of different materials but suffer from interfacial mismatch and interfacial polarization. In this work, a combination of high-breakdown Pb0.94La0.04(Zr0.99-xSnxTi0.01)O3 (PLZST) with high-efficiency Pb0.8925Ba0.04La0.045(Zr0.65Sn0.3Ti0.05)O3 (PBLZST) is explored to enhance energy storage performance. Via adjusting Sn content in PLZST, the difference in lattice and dielectric properties between two phases are reduced, decreasing interfacial polarization. The breakdown strength of PBLZST-PLZST is boosted from 285 kV cm−1 to 345 kV cm−1, with maximum polarization strength decreasing from 44 μC cm−2 to 36 μC cm−2. An recoverable energy density (Wre ∼ 7.152 J cm−3) and discharged efficiency (η ∼ 90.5%) has been achieved in Pb0.8925Ba0.04La0.045(Zr0.65Sn0.3Ti0.05)O3-Pb0.94La0.04(Zr0.69Sn0.3Ti0.01)O3 (x = 0.3) composite ceramics. These findings highlight the potential of interfacial polarization engineering for developing composite ceramics with high-energy storage performance.