Compressive Strain State Research Articles

First-principles study on thermal transport properties of GaN under different cross-plane strain

With the development of power devices towards high integration and power, the electrical and thermal stresses per unit area become more concentrated and intensified. The impact of cross-plane strain resulting from inverse piezoelectric effect and thermal expansion on power devices cannot be ignored. Cross-plane strain has a substantial influence on the thermal properties of GaN. However, the research on the influence of cross-plane strain on the thermal conductivity of GaN has not been reported in the literature. Based on the first-principles calculation method and the phonon Boltzmann transport equation, the influence of cross-plane strain on the thermal conductivity and phonon characteristics of the GaN lattice is systematically studied in this study. The thermal conductivity of GaN has anisotropy and increases significantly with the decrease in temperature. The thermal conductivity of GaN at room temperature under the free state is calculated to be 257 and 275 W/(m·K) for in-plane (k⊥) and cross-plane (k∥) directions, respectively. Compared with previous theoretical reports, our calculation results are more consistent with the existing experiment values. Under the state of cross-plane strain, the lattice thermal conductivity changes remarkably. In detail, the average thermal conductivity at room temperature decreased by 35 % under a 5 % cross-plane tensile strain state, while it increased by 11.5 % under a 5 % cross-plane compressive strain state. According to the calculation results, the influence of cross-plane on lattice thermal conductivity is mainly due to the change in phonon lifetime. The analysis of two mechanisms of phonon lifetime suppression indicates that the cross-plane strain will significantly change the frequency of the high-frequency optical acoustic branch. This result leads to a change in the phonon scattering process and thus affects the phonon lifetime. Besides, the anisotropy of thermal conductivity changes under different strain values, which may be due to the weakened piezoelectric polarization effect induced by strain.

Strain-Induced Uphill Hydrogen Distribution in Perovskite Oxide Films.

Incorporating hydrogen into transition-metal oxides (TMOs) provides a facile and powerful way to manipulate the performances of TMOs, and thus numerous efforts have been invested in developing hydrogenation methods and exploring the property modulation via hydrogen doping. However, the distribution of hydrogen ions, which is a key factor in determining the physicochemical properties on a microscopic scale, has not been clearly illustrated. Here, focusing on prototypical perovskite oxide (NdNiO3 and La0.67Sr0.33MnO3) epitaxial films, we find that hydrogen distribution exhibits an anomalous "uphill" feature (against the concentration gradient) under tensile strain, namely, the proton concentration enhances upon getting farther from the hydrogen source. Distinctly, under a compressive strain state, hydrogen shows a normal distribution without uphill features. The epitaxial strain significantly influences the chemical lattice coupling and the energy profile as a function of the hydrogen doping position, thus dominating the hydrogen distribution. Furthermore, the strain-(H+) distribution relationship is maintained in different hydrogenation methods (metal-alkali treatment) which is first applied to perovskite oxides. The discovery of strain-dependent hydrogen distribution in oxides provides insights into tailoring the magnetoelectric and energy-conversion functionalities of TMOs via strain engineering.

Spin transport properties of spinel vanadate-based heterostructures

Spin–orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin–orbit torque effect. Currently, magnetic insulator oxides with non-dissipative characteristics are being explored. When combined with non-magnetic heavy metals, known for their large spin–orbit coupling, they offer promising potential for energy-efficient spin-orbitronics applications. The intrinsic electronic correlations characterizing those strongly correlated oxides hold the promises to add extra control-knobs to the desired efficient spin-wave propagation and abrupt magnetization switching phenomena. Spinel vanadate FeV2O4 (FVO) exhibits several structural phase transitions, which are accompanied by an intricate interplay of magnetic, charge, and orbital orderings. When grown as a thin film onto SrTiO3, the compressive strain state induces a perpendicular magnetic anisotropy, making FVO-based heterostructures desirable for spin-orbitronics applications. In this study, we have optimized the deposition of stoichiometric and epitaxial Pt/FVO heterostructures by pulsed laser deposition and examined their spin-related phenomena. From angle-dependent magnetotransport measurements, we observed both anisotropic magnetoresistance and spin Hall magnetoresistance (SMR) effects. Our findings show the SMR component as the primary contributor to the overall magnetoresistance, whose high value of 0.12% is only comparable to properly optimized oxide-based systems.

Differential Sintering and Self‐Stress Effects on YSZ Ionic Conductivity

Thermomechanical stress simulations are combined with experimental tests to assess the effects of rigid inclusions on the sintering of 8 mol% yttria‐stabilized zirconia (8YSZ) green compacts and the phenomena of restricted and differential sintering on microstructure development and electrical properties are investigated. Rigid inclusions of sintered ceramic particles with different shapes (spherical and jagged) and compositions (alumina, 3YSZ, and 8YSZ) are added in different volume fractions (1, 5, and 15 vol%) to 8YSZ commercial powders, which are formed by isostatic pressing and sintered by conventional method. Restricted and differential sintering effects are observed in the development of the microstructure varying in function of volume fraction, shape, structural composition, and thermomechanical properties of the inclusions, resulting in different combinations of tensile and compressive strain states in the matrix, and varying electrical behaviors. The addition of 1 vol% of 8YSZ irregular rigid inclusions leads to an increase of 36% in total electrical conductivity and a 33% increase in power density under solid oxide fuel cells operation conditions compared to samples without inclusions.

Stable Strain State of Single‐Twinned AgPdF Nanoalloys under Formate Oxidation Reaction

Surface reconstruction as common phenomenon during catalysis complicates the prediction and modeling on catalytic activity of the nanoalloy, hence developing a stable structure to be resistant to surface restructuring would provide an ideal prototype for substantial and reliable mechanism analysis. Herein, the single‐twinned structure in inverse AgPdF catalyst is constructed to enhance the catalytic activity and stability for the formate oxidation reaction (FOR). The single‐twinned AgPdF nanoalloy (t‐AgPdF) catalyst exhibits an enhanced peak current density of 4.6 A mgPd−1, a reduced onset potential of 0.44 V, a higher activity retention of 55.7% after 600 cycles, and a longer activity retention time of 55.9 h. Additionally, the t‐AgPdF catalyst presents a higher hydrogen generation rate of 1.11 mL mgPd−1 than that of single‐crystalline AgPd nanoalloy (AgPd) catalyst, and density functional theory calculations reveal that t‐AgPdF(111) surface exhibits a reduced activation energy of 0.59 eV for formate decomposition reaction. Impressively, the t‐AgPdF maintains compressive and tensile strain state along the Σ3 twin boundaries before and after the FOR, in contrast to AgPd. This is the first time to reveal that the nanotwinned structures contribute inverse t‐AgPdF catalysts the catalytic active sites with stable strain state since starting reaction for the FOR.

Manipulating the magnetic and electric transport properties of La0.7Sr0.3MnO3 epitaxial thin film through ionic liquid-gated technology

Reversible manipulation of magnetic and electric transport properties by electrical means in perovskite transition metal oxides is of paramount importance in modern condensed matter physics and generates promising application prospects in electronic devices. However, the conventional method of field-effect transistor structure presents a huge limitation due to its poor ability to modulate the exceedingly high carrier density of about 1014−1015 cm−2. In this study, La0.7Sr0.3MnO3 (LSMO) epitaxial thin films with tensile and compressive strain states were obtained by growth on different single-crystal substrates. Compared with the LSMO thin film under tensile strain, the compressed LSMO thin film possesses more oxygen vacancies, a higher resistance and a smaller magnetization. In addition, the structural phases, magnetic and electric transport properties in both LSMO thin films were also manipulated by the ionic liquid-gated method. The LSMO thin film under compressive strain shows easier access to the reversible control of the structural phase and magnetic & electrical transport properties than the LSMO thin film under tensile strain. The synergy of the above capabilities proves an effective and reversible route to manipulate the properties of perovskite transition metal oxides, providing tremendous potential in the design of multiple-state memories, neuromorphic transistors, and other multifunctional devices.

Strain-modulated spin Hall magnetoresistance in YIG/Pt heterojunctions

This paper reports that the substrate-induced strain effect can be utilized to control spin Hall magnetoresistance (SMR) of YIG/Pt heterojunctions. The YIG films with in-plane compressive strain and tensile strain are respectively prepared on GGG and GSGG substrates by pulsed-laser deposition. The ratio of SMR of YIG/Pt heterojunctions with YIG under the in-plane tensile strain state is 1.6 time larger than that of YIG with the out-of-plane compressive strain state. The spin mixing conductance of YIG/Pt interface increases with the substrate-induced in-plane tensile strain on YIG. The increase of roughness and the reduction of ratio of Fe3+/Fe2+ for YIG surface is responsible for this modulation. This finding provides an interesting prospect for control of SMR by substrate-induced strain effect.

Luminescence mechanism of InGaAs self-fit well-cluster composite structure with super-wide spectra

This paper reports an InGaAs/GaAs well-cluster composite(WCC) quantum structure, which has shown great advantages in the development of new types of lasers with super-wide spectra. The spectral bandwidth is broadened to 6-fold broader than that of a classic InGaAs quantum well under the same carrier density. However, the luminescence mechanism of InGaAs/GaAs WCC structure is still unclear because of the self-fit distribution of indium contents and hybrid strain types in InxGa1-xAs material. In this paper, the gain spectra and energy band structure containing both compressive and tensile strain states are obtained to reveal the super-wide spectra with dual peaks in transverse electric (TE) and transverse magnetic (TM) polarization modes. The super-wide spectrum with a bimodal feature is attributed to all emissions from normal In0.17Ga0.83As region and indium-deficient InxGa1-xAs regions caused by the self-fit migration of indium atoms. The band offsets of heavy holes and light holes in normal and indium-deficient InxGa1-xAs regions are determined by calculating the peak space of TE and TM spectra. In addition, the thickness fluctuation and hybrid strain distribution in the asymmetrical WCC structure are also obtained by comparing the intensity of dual peaks. The significance of this result is that it not only reveals the energy band characteristics and luminescence mechanism but also determines the critical thickness of indium atom self-fit migration. The result is significant to greatly enhance the performance of InGaAs-based WCC tunable lasers in extending spectral tuning range.

Microstructure evolution of transformation induced plasticity seamless steel tube in hydraulic free bulge test

AbstractIn this study the hydraulic free bulge test with an internal pressure boosting velocities of 0.5 MPa/s and punch feeding speed of 0.2 mm/s was carried out to study the microstructure evolution of the transformation induced plasticity seamless steel tube in the hydroforming process. The microstructure of the selected parts of the tube after the hydraulic free bulge test were investigated with the optical microscope and transmission electron microscope. The transformation rate of the retained austenite to martensite of the selected parts were determined by the x‐ray diffraction. To study the deformation behavior and obtain the stress‐strain state of the tube, the finite element simulation of the hydraulic free bulge test was also carried out. The results show that the retained austenite in the microstructure of all the selected parts transformed to martensite after the hydraulic free bulge test. In the center part of the tube, the highest transformation rate of 82.84 % was obtained. The retained austenites distribute inside of the ferrite grains transform to martensite firstly under the compressive stress and strain state. The retained austenites distribute at the ferrite grain boundaries start to transforme into martensite when the tube is subjected to the tensile stress and strain.

Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics

BGaAs/GaAs epilayers and BInGaAs/GaAs quantum well (QW) have been prepared using metal–organic chemical vapor deposition under different growth conditions, and their physical and structural properties have been examined. SEM-EDS investigation showed a dependence of surface properties of the ternary compound on the growth conditions. High-resolution X-ray diffraction evidenced a tensile strain for the ternary alloys whatever the growth condition, while the quaternary QW always shows a compressive strain state. Room temperature optical absorption allowed to follow the variation of the bandgap with boron incorporation. Photoluminescence measurements confirmed the carrier-localization phenomenon and its dependence with the growth conditions. Deposition temperature and diborane (B2H6) flow rate are with particularly significant effects on the optical properties: lower diborane flow rate and high growth temperature enhance the radiative emission. Computer simulation using localized state ensemble model quantitatively relates the lattice inhomogeneity to the optical properties and suggests a way to engineer the localization phenomenon and avoid clustering effects. Electrical investigations by current–voltage, capacitance and conductance methods have been performed for the first time on selected BGaAs samples. The ideality factor of Schottky barriers has been determined, while their height and film doping level could only be approximately estimated. Such physical properties make boron-based alloys very promising for applications in multijunction solar cells.

Strain-Induced Magnetic Transitions in SrMO2.5 (M = Mn, Fe) Thin Films with Ordered Oxygen Vacancies.

We examine the epitaxial-strain-induced phase transitions in thin films of perovskite-derived SrMnO2.5 and SrFeO2.5 exhibiting ordered oxygen vacancies (OOVs). We find that SrMnO2.5 hosts multiple magnetic transitions to other ordered states, including antiferromagnetic (AFM) and ferromagnetic (FM) orders of E*-AFM, C-AFM, and FM types depending on the compressive or tensile strain state. In contrast, no magnetic transitions occur in thin-film SrFeO2.5 (G-AFM to FM), whereas its bulk phase exhibits a hydrostatic pressure-induced AFM-to-FM transition. We explain the origin of these dependencies on the transition-metal configuration, that is, d4 Mn versus d5 Fe, and the relative orientation of the OOVs in the Ca2Mn2O5-type structure with respect to the epitaxial interface. We find that the magnetic phase stability can be predicted by using exchange striction arguments, with FM (AFM) spin interactions preferring longer (shorter) Mn-O bonds in the square pyramidal MnO5 unit comprising SrMnO2.5. Because the Mn-O bond lengths directly shrink or elongate to accommodate the applied stress without considerable polyhedral rotations, we show that compressive and tensile strain tune the unit cell structure to favor different combinations of exchange interactions that stabilize the various magnetic spin orders. Our study shows that the strong coupling between the OOV structure and spin orders with epitaxial strain is a promising route to achieve picoscale control of functional electronic and magnetic responses in complex oxide thin films.

The effect of dislocation-related V-shaped pits preparation on the strain of AlN templates

Herein, the dislocation defects of an aluminum nitride (AlN) template heteroepitaxially grown by metal-organic chemical vapor deposition are exposed by phosphoric acid etching. The effect of dislocation-related V-shaped pits preparation on the strain of AlN epilayer is intensively studied. The results show that the dislocation defect etching leads to a strain gradient elongating along the growth direction of AlN and alleviates its initial tensile strain. Through a secondary epitaxy on the dislocation-etched AlN, it further reveals that the strain evolves into compressive strain state accompanied by surface cracking inhibition. It provides an effective way of stress regulation by dislocation-related etching and can be developed as a mask-free lateral epitaxial growth technique for high-performance AlN template preparation.

Two-dimensional ZnI2 monolayer as a photocatalyst for water splitting and improvement its electronic and optical properties by strains

We investigate the electronic and optical properties of zinc iodide (ZnI 2 ) under the effect of the biaxial strains. It has been emphasized that ZnI 2 monolayer is stable based on the molecular dynamics simulations, phonon dispersion curve and binding energy calculations. In the equilibrium state, the results revealed that the ZnI 2 monolayer is a semiconductor with the indirect bandgap value of 2.018 eV/2.94 eV using PBE/HSE06 methods. In addition, the ZnI 2 monolayer has appropriate band-edge positions for the oxidation and reduction reactions of water splitting at pH = 0. Besides, it is disclosed that the energy bandgap varies extremely with the influence of biaxial strain reaching about 1.631 eV with the compressive strain of −6%. Generally, the change in the bandgap is higher with the compressive strain state than that with the tensile strain state. However, all energy gaps are located in the visible region and distributed in wide range regions which can have extensive nanodevices applications. Most importantly, a remarkable enhancement in the optical properties can be perceived under the strain effect. Precisely, the absorption coefficient achieves a maximum value of 16.6 × 10 4 cm −1 at −6% within the ultraviolet range. Finally, our perusal highlights that the effect of the biaxial strain on the ZnI 2 monolayer presents effectual guidance to design highly effective optoelectronic materials for nanoscale devices. • ZnI 2 monolayer is semiconductor with a bandgap of 2.018/2.94 eV using PBE/HSE06 methods. • The energy bandgap is tuning considerably under the biaxial strain effect. • Tensile strain results in significant red-shifting in the absorption edge. • The ZnI 2 monolayer can act as a high-efficiency photocatalyst for water splitting. • Control of the electronic and optical properties is beneficial in nanoelectronic applications.

Elastic strain induced abnormal grain growth in graphene nanosheets (GNSs) reinforced copper (Cu) matrix composites

Orientation related grain growth stimuli during primary and secondary recrystallization of the metal matrix in laminated metal/non-metal composites demonstrate unique effect on orientation evolution but has rarely been investigated. In this work, the recrystallization and grain growth of Cu in a graphene nanosheets (GNSs) reinforced laminated Cu matrix composite during sintering was thoroughly investigated. The microstructure, texture and lattice strain evolution of the Cu/GNS composite was examined referenced to the Cu stack without GNSs by ex-situ and in-situ orientation characterization techniques (SEM-EBSD, neutron diffraction and synchrotron radiation) from mesoscale to macroscopic scale. The results evidenced that a strong Cube orientation was produced in the Cu/GNS composite instead of the individual non-Cube orientations in the pure Cu stack without GNSs. Detailed strain-state analysis of the Cu foils in the Cu/GNS composite revealed that the anisotropic expansion behavior of the GNS that is incompatible with that of the Cu foils imposed multiple elastic constraints to the foils during the sintering process, resulting in a biaxial isostrain state in the surface layers and a uniaxial compressive strain state in the central layer of each Cu foil. The elastic anisotropy of Cu favors the growth of the Cube oriented grains to minimize the total strain energy. This work clarified the thermal strain induced abnormal grain growth of selected orientations. The mechanism revealed can be useful for analysing abnormal grain growth in elastically strained materials and can also be applied to fabrication process for texturization or even monocrystallization.

Model test study on mechanical properties of pipe under the soil freeze-thaw condition

Buried pipe is an important structure underneath embankment. In the frozen soil region, the destruction of pipe will directly affect the service life and benefit of road. Based on the effect of freeze-thaw action of embankment filling on pipes in the field, model tests on shallow buried PVC (Polyvinyl chloride) pipe were carried out in the temperature control laboratory. Variation of stress and strain of pipe, earth pressures around pipe and deformations of pipe were investigated under different filling loads, different layers of geogrid, symmetrical and asymmetrical freeze-thaw of soil around the pipes. The test results show that most of the upper half of the pipe is in compressive strain state, except for the 0° measuring point on the crown vertex of the pipe. And most of the lower half of the pipe is in tensile strain state. The maximum compressive stress and the maximum tensile stress are at points with an angle of 45° and 135° from the vertices of pipe, respectively. When symmetrical frost-heave of the soil occurs in the surrounding pipe, load reduction measures should be taken at the crown of the pipe. When asymmetrical frost-heave of the soil occurs in the surrounding pipe, the differential horizontal deformation of the pipe between its left and right halves is obvious, therefore the earth pressures on the lateral of the pipe should be monitored emphatically. The geogrid installed above the pipe effectively reduces the eccentric load on the pipe. The thaw-settlement of frozen soil has the greatest impact on the deformation of shallow buried pipes, which is more threatening to cause pipe damage. The test results can provide a reference for engineering design, construction and maintenance of shallow buried pipe under the soil freeze-thaw condition.

Strain Effects on the 2D van der Waals Heterostructure C3B/C3N: A Density Functional Theory and a Tight‐Binding Study

The 2D van der Waals (vdW) heterostructure C3B/C3N is a prototype of the 2D pn junction. To understand the effects of the built‐in electrical field on the properties of this heterostructure and the evolvement of properties under different strain states, the electronic structure of the system is systematically calculated and analyzed, using the first‐principle method and the tight‐binding (TB) Hamiltonian. Two stable structures and two saddle points in the potential surface are identified, between which the potential barriers along different sliding paths are compared. A TB model with 13 parameters is constructed, and it gives a reasonable potential difference when the heterostructure is under different strain states. Moreover, three distinct features are observed, namely the bandgap variation, metal–semiconductor transition, and band inversion under biaxial compressive strain states. By analyzing the work function change and capacitance variation, it is explained as to why the band spectrum changes as observed. This work deepens the understanding of the properties of the 2D vdW heterostructure, especially the effect of the built‐in electrical field on the band spectrum.

Thermal transport properties of GaN with biaxial strain and electron-phonon coupling

Strain inevitably exists in practical GaN-based devices due to the mismatch of lattice structure and thermal expansion brought by heteroepitaxial growth and band engineering, and it significantly influences the thermal properties of GaN. In this work, thermal transport properties of GaN considering the effects from biaxial strain and electron-phonon coupling (EPC) are investigated using the first principles calculation and phonon Boltzmann transport equation. The thermal conductivity of free GaN is 263 and 257 W/mK for in-plane and cross-plane directions, respectively, which are consistent better with the experimental values in the literature than previous theoretical reports and show a nearly negligible anisotropy. Under the strain state, thermal conductivity changes remarkably. In detail, under +5% tensile strain state, average thermal conductivity at room temperature decreases by 63%, while it increases by 53% under the −5% compressive strain, which is mostly attributed to the changes in phonon relaxation time. Besides, the anisotropy of thermal conductivity changes under different strain values, which may result from the weakening effect from strain induced piezoelectric polarization. EPC is also calculated from the first principles method, and it is found to decrease the lattice thermal conductivity significantly. Specifically, the decrease shows significant dependence on the strain state, which is due to the relative changes between phonon-phonon and electron-phonon scattering rates. Under a compressive strain state, the decreases of lattice thermal conductivity are 19% and 23% for in-plane and cross-plane conditions, respectively, comparable with those under a free state. However, the decreases are small under the tensile strain state, because of the decreased electron-phonon scattering rates and increased phonon anharmonicity.

Forming limit diagrams for tubes with non-uniform thickness in hydro-bulging

Tube hydroforming (THF) is a unique forming technique, which can transform metal tubes into complex hollow parts using hydraulic fluid as the forming medium. The initial non-uniform thickness of as-received practical tubes significantly affects their formability in the hydroforming process. A forming limit diagram (FLD), also called as the forming limit curve (FLC), is often adopted to evaluate the forming behaviour of sheet metals in plastic forming processes to avoid forming failures. The purposes of this research are fivefold, namely to establish the FLCs of tubular blanks with varied initial thickness deviations in tensile and compressive strain states by means of finite element (FE) modelling of THF, to construct a non-uniform geometric model for practical tubes, to analyse the impact of initial thickness deviation on the FLCs, to clarify the differences in the FLCs obtained using three different instability criteria, and to validate the proposed non-uniform geometric model by conducting hydro-bulging experiments. Results show that it is possible to accurately predict the FLCs of practical tubes with initial non-uniform thicknesses using FE simulation combined with the proposed non-uniform geometric model. We found that the displacement of FLCs occurred in the major- and minor-strain coordinates because the thickness is initially not uniform; however, no significant discrepancies were observed in the FLCs obtained using the three instability criteria. The proposed approach, which combines FE simulation with a non-uniform geometric model, can be easily employed to predict the ultimate strains of tubes with initial non-uniform thicknesses in THF to avoid forming defects.

Molecular dynamics simulations of the coupled effects of strain and temperature on displacement cascades in α-zirconium

Abstract In this article, we conducted molecular dynamics simulations to investigate the effect of applied strain and temperature on irradiation-induced damage in alpha-zirconium. Cascade simulations were performed with primary knock-on atom energies ranging between 1 and 20 KeV, hydrostatic and uniaxial strain values ranging from −2% (compression) to 2% (tensile), and temperatures ranging from 100 to 1000 K. Results demonstrated that the number of defects increased when the displacement cascade proceeded under tensile uniaxial hydrostatic strain. In contrast, compressive strain states tended to decrease the defect production rate as compared with the reference no-strain condition. The proportions of vacancy and interstitial clustering increased by approximately 45% and 55% and 25% and 32% for 2% hydrostatic and uniaxial strain systems, respectively, as compared with the unstrained system, whereas both strain fields resulted in a 15–30% decrease in vacancy and interstitial clustering under compressive conditions. Tensile strains, specifically hydrostatic strain, tended to produce larger sized vacancy and interstitial clusters, whereas compressive strain systems did not significantly affect the size of defect clusters as compared with the reference no-strain condition. The influence of the strain system on radiation damage became more significant at lower temperatures because of less annealing than in higher temperature systems.

Strain mediated asymmetric response of the cation distribution on epitaxial CoFe2O4 films

The asymmetric response of the cation distribution on [001] oriented CoFe2O4 films were examined. Depending on the deposition temperature and substrates (MgO(0 0 1) or SrTiO3(0 0 1)), the films exhibited a range of compressive or tensile strain states along the out-of-plane. With increases in deposition temperature, the initial compressive (tensile) strain for the films grown on MgO(0 0 1) (SrTiO3(0 0 1)) was reduced. Furthermore, the out-of-plane (in-plane) magnetic anisotropy of the film grown on MgO(0 0 1) (SrTiO3(0 0 1)) decreased with increasing deposition temperature. The uniaxial magnetic anisotropy energy calculation based on the magnetic anisotropy (crystalline and shape) and strain of films confirmed that the strain reduction with increasing deposition temperature is the main source of the uniaxial magnetic anisotropy reduction, regardless of the sign of the strain. X-ray photoelectron spectroscopy explained the saturation magnetization variation by the cation distribution depending on the strain state. Furthermore, the calculated magnetic moment based on the cation distribution were well matched for the high crystalline films.