Zn doped and Sn:Zn co‒doped CdS semiconductor nanostructured have been fabricated by chemical reaction, then thin film samples have been deposited by pulsed laser method. The coated films have a hexagonal phase as demonstrated by X‒ray (XRD) diffraction with fine Nano-crystallites with crystallite size between (2.6–2.85 nm). The UV–visible test showed good transmittance and obtained energy gap increased for Zn:CdS (3.30 eV) compared to bulk CdS. Electrical examination revealed that some samples have an enhancement in current with increased applied voltage in Sn ions adding to the Zn:CdS composition might be due to adding sub-levels electronic transitions. Morphology characterization was examined by atomic force (AFM) microscopy and was declared that the samples were quite smooth and increased roughness with increased co‒doping ions.