Complex Oxide Thin Films Research Articles

Route to Enhancing Remote Epitaxy of Perovskite Complex Oxide Thin Films.

Remote epitaxy is taking center stage in creating freestanding complex oxide thin films with high crystallinity that could serve as an ideal building block for stacking artificial heterostructures with distinctive functionalities. However, there exist technical challenges, particularly in the remote epitaxy of perovskite oxides associated with their harsh growth environments, making the graphene interlayer difficult to survive. Transferred graphene, typically used for creating a remote epitaxy template, poses limitations in ensuring the yield of perovskite films, especially when pulsed laser deposition (PLD) growth is carried out, since graphene degradation can be easily observed. Here, we employ spectroscopic ellipsometry to determine the critical factors that damage the integrity of graphene during PLD by tracking the change in optical properties of graphene in situ. To mitigate the issues observed in the PLD process, we propose an alternative growth strategy based on molecular beam epitaxy to produce single-crystalline perovskite membranes.

Epitaxial Thin Film Growth on Recycled SrTiO3 Substrates Toward Sustainable Processing of Complex Oxides.

Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high-quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO3 (STO), MgO, LaAlO3, a-Al2O3, and many others. Recent successes in transferring these complex oxides as free-standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost-effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high-resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre-strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y3Fe5O12) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high-quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices.

Hydrogen-Induced Topotactic Phase Transformations of Cobaltite Thin Films.

Manipulating physical properties through ion migration in complex oxide thin films is an emerging research direction to achieve tunable materials for advanced applications. While the reduction of complex oxides has been widely reported, few reports exist on the modulation of physical properties through a direct hydrogenation process. Here, we report an unusual mechanism for hydrogen-induced topotactic phase transitions in perovskite La0.7Sr0.3CoO3 thin films. Hydrogenation is performed upon annealing in a pure hydrogen gas environment, offering a direct understanding of the role that hydrogen plays at the atomic scale in these transitions. Topotactic phase transformations from the perovskite (P) to hydrogenated-brownmillerite (H-BM) phase can be induced at temperatures as low as 220 °C, while at higher hydrogenation temperatures (320-400 °C), the progression toward more reduced phases is hindered. Density functional theory calculations suggest that hydroxyl bonds are formed with the introduction of hydrogen ions, which lower the formation energy of oxygen vacancies of the neighboring oxygen, enabling the transition from the P to H-BM phase at low temperatures. Furthermore, the impact on the magnetic and electronic properties of the hydrogenation temperature is investigated. Our research provides a potential pathway for utilizing hydrogen as a basis for low-temperature modulation of complex oxide thin films, with potential applications in neuromorphic computing.

Tuning grain boundary cation segregation with oxygen deficiency and atomic structure in a perovskite compositionally complex oxide thin film

Compositionally complex oxides (CCOs) are an emerging class of materials encompassing high entropy and entropy stabilized oxides. These promising advanced materials leverage tunable chemical bond structure, lattice distortion, and chemical disorder for unprecedented properties. Grain boundary (GB) and point defect segregation to GBs are relatively understudied in CCOs even though they can govern macroscopic material properties. For example, GB segregation can govern local chemical (dis)order and point defect distribution, playing a critical role in electrochemical reaction kinetics, and charge and mass transport in solid electrolytes. However, compared with conventional oxides, GBs in multi-cation CCO systems are expected to exhibit more complex segregation phenomena and, thus, prove more difficult to tune through GB design strategies. Here, GB segregation was studied in a model perovskite CCO LaFe0.7Ni0.1Co0.1Cu0.05Pd0.05O3−x textured thin film by (sub-)atomic-resolution scanning transmission electron microscopy imaging and spectroscopy. It is found that GB segregation is correlated with cation reducibility—predicted by an Ellingham diagram—as Pd and Cu segregate to GBs rich in oxygen vacancies (VO··). Furthermore, Pd and Cu segregation is highly sensitive to the concentration and spatial distribution of VO·· along the GB plane, as well as fluctuations in atomic structure and elastic strain induced by GB local disorder, such as dislocations. This work offers a perspective of controlling segregation concentration of CCO cations to GBs by tuning reducibility of CCO cations and oxygen deficiency, which is expected to guide GB design in CCOs.

High‐Throughput Exploration of Phase Evolution in (Pb1−XBaX)ZrO3 Thin Films

AbstractAntiferroelectric thin films hold significant potential for bringing novel physics phenomena and fascinating properties. Their applications are often intertwined with the antiferroelectric‐ferroelectric phase transition, which is contingent on the chemical compositions of the constituent material. Nevertheless, the prevailing trial‐and‐error‐based research methodology is ill‐suited for the exploration of the relationship between chemical compositions and the antiferroelectric‐ferroelectric phase transition. To address this challenge, a high‐throughput synthesis strategy for antiferroelectric thin films is presented, which is enabled by an advanced high‐throughput pulsed laser deposition technology. The effectiveness of this synthesis strategy using (Pb1−XBaX)ZrO3 and achieving precise control over the parameter X is showcased. This approach allows for the deposition of (Pb1−XBaX)ZrO3 thin films encompassing nine chemical compositions ranging from X = 0 to X = 0.08. Based on this high‐throughput method, the composition that corresponds to the phase transition of (Pb1−XBaX)ZrO3, falling within the range of X = 0.04 to X = 0.06 is pinpointed. Furthermore, a temperature‐dependent correlation between the phase transition and chemical composition is established. This work not only presents a practical routine for establishing a comprehensive map of material chemical composition in relation to the properties of antiferroelectric thin films but also offers a method for the high‐throughput exploration of complex oxide thin films.

Synthesis and structures of cobalt-expanded zirconium- and cerium-oxo clusters as precursors for mixed-metal oxide thin films.

Transforming current complementary metal-oxide-semiconductor (CMOS) technology to fabricate memory chips and microprocessors into environmentally friendlier electronics requires the development of new approaches to resource- and energy-efficient electron transport and switching materials. Metal and multi-metal oxide layers play a key role in high-end technical applications. However, these layers are commonly produced through high-energy and high-temperature procedures. Herein, we demonstrate our first attempts to obtain stimuli-responsive mixed-metal oxide thin films from solution-processed molecular precursors under milder conditions. The molecular compounds of interest were prepared by one-pot reactions of a CoII carboxylate complex, triethylamine (Et3N), N-butyldiethanolamine (H2bda), and a hexanuclear complex [Ce6O4(OH)4(piv)12] (Hpiv = pivalic acid) or [Zr6O4(OH)4(ib)12(H2O)]·3Hib (Hib = isobutyric acid) in acetonitrile solution. The resulting charge-neutral, heterometallic coordination compounds display a ligand-supported pentanuclear {CeIV3CoIII2} core (in 1) and a dodecanuclear {ZrIV6CoII6} core (in 2), exhibiting thermal stability up to ca. 100 °C in air. Compound 2 was deposited and analyzed on Au(111) and SiO2/Si(100) surfaces to explore its potential as a single-molecule precursor for the preparation of atomically precise, complex mixed-metal oxide thin films. The adsorption characteristics of it demonstrate the ability to form stable agglomerates on the investigated surfaces.

Influence of misfit dislocations on ionic conductivity at oxide interfaces

Mismatched complex oxide thin films and heterostructures have gained significant traction for use as electrolytes in intermediate temperature solid oxide fuel cells, wherein interfaces exhibit variation in ionic conductivity as...

FeVO4-based solution-processed all oxide self-biased fast photodetectors

A solution-processed all-oxide self-biased FeVO4–NiO n–p heterojunction-based fast photodetector is prepared that maintains its performance after dropwise adding water onto the pristine device, and drying at a temperature of 120 °C.

Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process

HighlightsThe (001)-oriented ferromagnetic La0.67Sr0.33MnO3 films are stuck onto the (011)-oriented ferroelectric single-crystal 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 substrate with 0° and 45° twist angle.By applying a 7.2 kV cm−1 electric field, the coexistence of uniaxial and fourfold in-plane magnetic anisotropy is observed in 45° Sample, while a typical uniaxial anisotropy is found in 0° Sample.Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering. In recent years, lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations. Moreover, twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures. A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process, which could provide some insight in to the physical phenomena. In this work, the La0.67Sr0.33MnO3 (001)/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (011) (LSMO/PMN-PT) heterostructures with 45º and 0º twist angles were assembled via water-etching and transfer process. The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO < 110 >. A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO [110] easy axis is observed for the 45° Sample by applying a 7.2 kV cm−1 electrical field, significantly different from a uniaxial anisotropy with LSMO [100] easy axis for the 0° Sample. The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45° twist angle causes different lattice distortion of LSMO, thereby enhancing both the fourfold and uniaxial anisotropy. This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.

Epitaxial Design of Complex Nickelates as Electrocatalysts for the Oxygen Evolution Reaction

AbstractThe oxygen evolution reaction (OER) is a crucial process in electrochemical water splitting, a promising technology to renewably yield hydrogen gas from water. Designing and developing earth‐abundant, efficient, and stable OER electrocatalysts to replace the most widely used but scarce RuO2 and IrO2 are thus of critical interest. Recently, ABO3‐structured perovskite oxides, especially rare‐earth nickelates, are extensively studied for their potential use as OER electrocatalysts. In particular, the epitaxial synthesis of complex oxide thin films allows flexible and precise control over the materials so that their structure–stability–property relationships can be established. Using nickelate thin films as model systems, this review illustrates how epitaxial design allows researchers to test different hypotheses and proposed descriptors, as well as formulate new design principles. Following a brief introduction to the background of OER mechanisms, proposed activity descriptors, and synthesis methods, various epitaxial design strategies are surveyed including strain tuning, composition control, surface termination/orientation selection, defect engineering, and interface design. These have led to precise control over the atomic structures and electronic properties of nickelates which in turn determine their electrochemical performance. Finally, the remaining challenges and perspectives toward a deeper understanding and use of complex oxides as OER catalysts are discussed.

Nd:YAG infrared laser as a viable alternative to excimer laser: YBCO case study

We report on the growth and characterization of epitaxial YBa_{2}Cu_{3}O_{7-delta } (YBCO) complex oxide thin films and related heterostructures exclusively by Pulsed Laser Deposition (PLD) and using first harmonic Nd:Y_{3}Al_{5}O_{12} (Nd:YAG) pulsed laser source (lambda = 1064 nm). High-quality epitaxial YBCO thin film heterostructures display superconducting properties with transition temperature sim 80 K. Compared with the excimer lasers, when using Nd:YAG lasers, the optimal growth conditions are achieved at a large target-to-substrate distance d. These results clearly demonstrate the potential use of the first harmonic Nd:YAG laser source as an alternative to the excimer lasers for the PLD thin film community. Its compactness as well as the absence of any safety issues related to poisonous gas represent a major breakthrough in the deposition of complex multi-element compounds in form of thin films.

Resistance fluctuation spectroscopy of phase transitions in (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)NiO3 thin films

The study of phase transitions is crucial to understanding the physics of materials and utilizing them for technological applications. This article presents a detailed analysis of the electronic transport properties of high entropy oxide thin films. We observe an increase in resistance fluctuations across a first-order phase transition. We show that the noise arises from an electronic phase separation accompanying the spin ordering due to the formation of domains of localized and delocalized charges. We conclude that due to charge disproportionation, the charge carriers form domains of localized and delocalized electrons in this system. Our study establishes the existence of multiple states with near equal energy in such complex oxide thin films.

High sensitivity and fast response self-powered PbSe ultraviolet pulsed photodetectors based on the transverse thermoelectric effect

Light-induced transverse thermoelectric (TTE) effect has attracted extensive attentions because of the great potential application in self-powered photodetectors. In this paper, we report the ultraviolet pulsed light-induced TTE effect in the inclined PbSe thin films. Without any external voltage applied, gigantic open-circuit voltage signals with ultrafast responses in the order of nanoseconds were obtained when the film surface was irradiated by a 308 nm pulsed laser. The voltage sensitivity Rs can reach up to ∼7.75 V/mJ and the figure of merit Fm is as high as ∼350 mV/ns, both of which are higher than the best values reported in most of complex oxide thin films. In addition, the experimental results reveal that the polarity of the induced voltage will immediately reverse when the film is irradiated from the substrate side and the amplitudes of the voltage are linearly proportional to sin2α (α is the inclination angle of the films). Here, the anisotropy of the Seebeck coefficient is used to explain the origin of the TTE voltage. The results demonstrate the great potential application of PbSe thin film for the high sensitivity and fast response self-powered ultraviolet pulsed photodetectors.

Composition tuning of Mg/Ir ratio and crystallization of a spinel-related structure in Mg-Ir-O films by pulsed-laser deposition

Pulsed-laser deposition is one of widely used methods to fabricate complex oxide thin films. In pulsed-laser deposition processes, composition of films is regulated by balance of supply and re-evaporation via various conditions such as laser pulses for target ablation, composition of target, substrate temperature, and oxidizing atmosphere. In this study, we report an experimental scheme to tune Mg/Ir composition ratio in Mg-Ir-O films fabricated by pulsed-laser deposition. In contrast to usual situations of oxide films, it was difficult to attain the composition of Mg/Ir ∼ 1 in the Mg-Ir-O films by ablating a target of Mg/Ir ∼ 1. By examining three targets with different Mg/Ir ratios, various laser fluences, substrate temperature, and oxygen partial pressure, a wide range of Mg/Ir composition ratio was regulated in the Mg-Ir-O thin films. We discovered a spinel-related crystalline phase in the Mg-Ir-O films controlled in Mg-rich compositions.

Chemical synthesis of complex oxide thin films and freestanding membranes.

Oxides offer unique physical and chemical properties that inspire rapid advances in materials chemistry to design and nanoengineer materials compositions and implement them in devices for a myriad of applications. Chemical deposition methods are gaining attention as a versatile approach to develop complex oxide thin films and nanostructures by properly selecting compatible chemical precursors and designing an accurate cost-effective thermal treatment. Here, upon describing the basics of chemical solution deposition (CSD) and atomic layer deposition (ALD), some examples of the growth of chemically-deposited functional complex oxide films that can have applications in energy and electronics are discussed. To go one step further, the suitability of these techniques is presented to prepare freestanding complex oxides which can notably broaden their applications. Finally, perspectives on the use of chemical methods to prepare future materials are given.

Insights into growing flexible single crystals could help develop new electronics materials

Using in situ X-ray measurements to get a closer look at how complex oxide thin films grow on graphene.

Interface-Driven Multiferroicity in Cubic BaTiO3-SrTiO3 Nanocomposites.

Perovskite multiferroics have drawn significant attention in the development of next-generation multifunctional electronic devices. However, the majority of existing multiferroics exhibit ferroelectric and ferromagnetic orderings only at low temperatures. Although interface engineering in complex oxide thin films has triggered many exotic room-temperature functionalities, the desired coupling of charge, spin, orbital and lattice degrees of freedom often imposes stringent requirements on deposition conditions, layer thickness and crystal orientation, greatly hindering their cost-effective large-scale applications. Herein, we report an interface-driven multiferroicity in low-cost and environmentally friendly bulk polycrystalline material, namely cubic BaTiO3-SrTiO3 nanocomposites which were fabricated through a simple, high-throughput solid-state reaction route. Interface reconstruction in the nanocomposites can be readily controlled by the processing conditions. Coexistence of room-temperature ferromagnetism and ferroelectricity, accompanying a robust magnetoelectric coupling in the nanocomposites, was confirmed both experimentally and theoretically. Our study explores the 'hidden treasure at the interface' by creating a playground in bulk perovskite oxides, enabling a broad range of applications that are challenging with thin films, such as low-power-consumption large-volume memory and magneto-optic spatial light modulator.

In situ x-ray studies of growth of complex oxides on graphene by molecular beam epitaxy

Future technologies are likely to exploit flexible heterostructures exhibiting multifunctional properties constructed from multiple materials. One technique for the synthesis of such systems relies on remote epitaxy, a method employing graphene as a sacrificial layer between a crystalline substrate and an epitaxial film. The technique can be used to create single crystal heterostructures comprised of stacked epitaxial films, their properties optimized by minimizing incompatibilities between the different materials. Details regarding nucleation and growth via remote epitaxy remain unknown, however, due to the many difficulties in studying synthesis in the growth environment with atomic-scale resolution. Here, we describe an in situ synchrotron x-ray investigation of complex oxide thin film growth on graphene by molecular beam epitaxy. Phase retrieval methods were used to reconstruct the electron density profiles from x-ray crystal truncation rods measured under different growth conditions. Our in situ observations combined with post-growth spectroscopy provide a number of key insights regarding graphene in the synthesis environment and the resulting effects on the complex oxide/graphene heterostructure.

Stacking and Twisting of Freestanding Complex Oxide Thin Films.

The integration of dissimilar materials in heterostructures has long been acornerstone of modern materials science-seminal examples are 2D materials and van der Waals heterostructures. Recently, new methods have been developed that enable the realization of ultrathin freestanding oxide films approaching the 2D limit. Oxides offer new degrees of freedom, due to the strong electronic interactions, especially the 3d orbital electrons, which give rise to rich exotic phases. Inspired by this progress, a new platform for assembling freestanding oxide thin films with different materials and orientations into artificial stacks with heterointerfaces is developed. It is shown that the oxide stacks can be tailored by controlling the stacking sequences, as well as the twist angle between the constituent layers with atomically sharp interfaces, leading to distinct moiré patterns in the transmission electron microscopy images of the full stacks. Stacking and twisting is recognized as a key degree of structural freedom in 2D materials but, until now, has never been realized for oxide materials. This approach opens unexplored avenues for fabricating artificial 3D oxide stacking heterostructures with freestanding membranes across a broad range of complex oxide crystal structures with functionalities not available in conventional 2D materials.

Functional properties of Yttrium Iron Garnett thin films on graphene-coated Gd3Ga5O12 for remote epitaxial transfer

Remote epitaxial growth via a graphene interlayer and subsequent mechanical exfoliation of a free-standing membrane is a recently developed technique used to transfer complex oxide thin films onto non-native substrates to form heterogeneously integrated structures for various device applications. One such oxide is Yttrium Iron Garnet (YIG), a material of choice for a wide range of magnetoelectric and spintronic devices owing to its ferromagnetism with high Curie temperature as well as high quality factor and low losses in microwave frequencies. YIG is predominantly grown on lattice matched Gadolinium Gallium Garnet (GGG) substrates, but by utilizing the remote epitaxy technique, high quality YIG films can be transferred from GGG onto another substrate such as piezoelectric Lithium Niobate (LN). Mechanical strain coupling between the layers and magnetostrictive nature of YIG would allow for the investigation of the interplay in YIG/LN structures leading to the design of novel frequency agile magneto-acoustic devices. In this study functional properties of a YIG film grown using PLD on graphene-coated GGG substrate were investigated and compared to traditional YIG on GGG. Both materials were characterized in terms of crystal structure, surface morphology, FMR and Gilbert damping, and Raman and XAS spectroscopy. It was found that YIG on graphene-coated GGG exhibits significantly higher microwave losses than standard YIG on GGG (FMR linewidth 30.9 vs 2.1 Oe at 10 GHz, and Gilbert damping coefficient 15.4 × 10-4 vs 3.4 × 10-4 respectively), which was attributed to increased concentration of Fe2+ cations in YIG/Graphene/GGG. While the damping is higher in these studied films compared to YIG grown directly on GGG, the resulting properties are still very favorable compared to many other competing materials which can be grown without the need for lattice matched substrates, such as metallic ferromagnets.