Complementary Metal Oxide Semiconductor Sensor Research Articles

New method for optimizing the detection of low-energy soft X-rays (200–300 eV) in a CMOS detector

Complementary metal-oxide semiconductor (CMOS) sensors have been widely used as soft X-ray detectors in several fields owing to their recent developments and unique advantages. The CMOS detector parameters have been extensively studied and evaluated. However, the methods for discriminating signals and dark noise have not been sufficiently studied, particularly for low-energy soft X-rays. Setting a threshold, which is widely used for discrimination, is not suitable for low-energy soft X-rays because of the crossing of the energy bands of dark noise and signals. In this study, we analyzed the charge correlation of the CMOS detector GSENSE2020BSI (G2020BSI) and proposed a new two-dimensional segmentation method to optimize the discrimination of signals according to the charge correlation. The effectiveness of the method used to discriminate low-energy soft X-rays on the G2020BSI detector was qualitatively evaluated. The optimal feature parameters used in the two-dimensional segmentation method were investigated for G2020BSI. However, the two-dimensional segmentation method is insensitive to feature parameters.

High-speed readout system of X-ray CMOS image sensor for time domain astronomy

We developed an FPGA-based high-speed readout system for a complementary metal-oxide-semiconductor (CMOS) image sensor to observe soft X-ray transients in future satellite missions, such as HiZ-GUNDAM. Our previous research revealed that the CMOS image sensor has low-energy X-ray detection capability (0.4–4 keV) and strong radiation tolerance, which satisfies the requirements of the HiZ-GUNDAM mission. However, CMOS sensors typically have small pixel sizes (e.g., ∼10 µm), resulting in large volumes of image data. GSENSE400BSI has 2048×2048 pixels, producing 6 Mbyte per frame. These large volumes of observed raw image data cannot be stored in a satellite bus system with a limited storage size. Therefore, only X-ray photon events must be extracted from the raw image data. Furthermore, the readout time of CMOS image sensors is approximately ten times faster than that of typical X-ray CCDs, requiring faster event extraction on a timescale of ∼0.1 s. To address these issues, we have developed an FPGA-based image signal processing system capable of high-speed X-ray event extraction onboard without storing raw image data. The developed compact system enabled mounting on a CubeSat mission, facilitating early in-orbit operation demonstration. Here, we present the design and results of the performance evaluation tests of the proposed FPGA-based readout system. Utilizing X-ray irradiation experiments, the results of the X-ray event extraction with the onboard and offline processing methods were consistent, validating the functionality of the proposed system.

Optical Biosensing of Polarized Light

Interactions between liquid crystal molecules and target analytes open up various biosensing applications for quick screening and point-of-care applications. In this review, we categorized biosensors by type, depending on the liquid crystal mesophase, and considered several applications for the detection of biomolecules, point-of-care diagnostics and environmental monitoring. We also discuss interactions between polarized light and target pathogens dispersed in biological fluids, which result in the change of the polarization state. An array of the Stokes parameters can be compared with the pattern, and a proper pathogen can be manifested. We suggest that a combination of a micropolarizer array and a complementary metal oxide semiconductor sensor is an optimal setup for the detection of pathogens. Herein, we discuss the working principles of liquid crystal biosensors and their fabrication principles. In addition, relevant theoretical and practical issues related to liquid crystal biosensors are outlined. In general, this review gives an in-depth survey of the research on liquid crystal-based sensors, making it easier for researchers to locate their niche and make contributions to this subject from multiple viewpoints.

An Aluminum-coated sCMOS Sensor for X-Ray Astronomy

In recent years, tremendous progress has been made on scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors, making them a promising device for future space X-ray missions. We have customized a large-format sCMOS sensor, G1516BI, dedicated for X-ray applications. In this work, a 200 nm thick aluminum layer is successfully sputtered on the surface of this sensor. This Al-coated sensor, named EP4K, shows consistent performance with the uncoated version. The readout noise of the EP4K sensor is around 2.5 e− and the dark current is less than 0.01 e− pixel−1 s−1 at −30°C. The maximum frame rate is 20 Hz in the current design. The ratio of single pixel events of the sensor is 45.0%. The energy resolution can reach 153.2 eV at 4.51 keV and 174.2 eV at 5.90 keV at −30°C. The optical transmittance of the aluminum layer is approximately 10−8 to 10−10 for optical lights from 365 to 880 nm, corresponding to an effective aluminum thickness of around 140 to 160 nm. The good X-ray performance and low optical transmittance of this Al-coated sCMOS sensor make it a good choice for space X-ray missions. The Lobster Eye Imager for Astronomy, which has been working in orbit for about one year, is equipped with four EP4K sensors. Furthermore, 48 EP4K sensors are used on the Wide-field X-ray Telescope on the Einstein Probe satellite, which will be launched at the end of 2023.

Image Reconstruction and Investigation of Factors Affecting the Hue and Wavelength Relation Using Different Interpolation Algorithms with Raw Data from a CMOS Sensor

An image processing method was employed to obtain wavelength information using light irradiated during camera exposure. Physically, hue (H) and wavelength (W) are closely related. Once the H value is known through image pixel analysis, the wavelength can be obtained. In this paper, the H-W curve was investigated from 400 to 650 nm using raw image data with a complementary metal oxide semiconductor (CMOS) sensor technology. We reconstructed the H-W curve from raw image data based on a demosaicing method with 2 × 2 pixel images. To date, no study has reported on reconstructing the H-W curve using several different interpolation algorithms in the 400~650 nm wavelength region. In addition, several factors affecting the H-W curve with a raw digital image, such as exposure time, aperture, and international organization for standardization (ISO) settings, were investigated for the first time.

Using and Testing Camera Sensors with Different Devices at Cosmic Ray Detection

Cosmic Ray (CR) is high-energy charged particles that reach the earth from space. CR detection methods and studies have been progressing rapidly since the beginning of the 20th century. One of these methods is the use of digital cameras with Charge Coupled Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS) sensors. Mobile phone cameras or webcams offer an easily using and economical measurement system for CR measurement. The sensors are exposed to CR during a long exposure. CRs leave traces in the background. Cosmic particle tracks are then separated from the background noise and can be classified. Making the traces of the particles visible is important for understanding the subject. In this context, traces of particles such as electrons, muons, and alphas can be seen with the cloud chamber experiments. Help of sensor technology and cameras have developed in recent years, CR traces can be easily detected so that it can be seen. There are many software and international projects that detect CR using CMOS sensors in cell phone cameras. In this study, related projects, programs and studies were researched; CR traces that we captured with the help of Cosmic-Ray Extremely Distributed Observatory (CREDO) and Cosmic Ray Finder (CRF) software with web cam and a mobile phone cam CMOS sensor are presented. Links have been made about astrophysical events coinciding with previously detected particle images.

The Lobster Eye Imager for Astronomy Onboard the SATech-01 Satellite

The Lobster Eye Imager for Astronomy (LEIA), a pathfinder of the Wide-field X-ray Telescope of the Einstein Probe mission, was successfully launched onboard the SATech-01 satellite of the Chinese Academy of Sciences on 2022 July 27. In this paper, we introduce the design and on-ground test results of the LEIA instrument. Using state-of-the-art Micro-Pore Optics (MPO), a wide field of view of 346 square degrees (18.°6 × 18.°6) of the X-ray imager is realized. An optical assembly composed of 36 MPO chips is used to focus incident X-ray photons, and four large-format complementary metal-oxide semiconductor (CMOS) sensors, each of size 6 cm × 6 cm, are used as the focal plane detectors. The instrument has an angular resolution of 4′–8′ (in terms of FWHM) for the central focal spot of the point-spread function, and an effective area of 2–3 cm2 at 1 keV in essentially all the directions within the field of view. The detection passband is 0.5–4 keV in soft X-rays and the sensitivity is 2–3 × 10−11 erg s−1 cm−2 (about 1 milliCrab) with a 1000 s observation. The total weight of LEIA is 56 kg and the power is 85 W. The satellite, with a design lifetime of 2 yr, operates in a Sun-synchronous orbit of 500 km with an orbital period of 95 minutes. LEIA is paving the way for future missions by verifying in flight the technologies of both novel focusing imaging optics and CMOS sensors for X-ray observation, and by optimizing the working setups of the instrumental parameters. In addition, LEIA is able to carry out scientific observations to find new transients and to monitor known sources in the soft X-ray band, albeit with limited useful observing time available.

The development and application of CMOS image sensor

This paper focuses on the development of Complementary metal-oxide semiconductor (CMOS) image sensor and its applications in aerospace, medical and automotive fields. Firstly, the representative events in history and the contributions of some companies to CMOS image sensor are described. Subsequently, some characteristics of CMOS image sensor are analyzed in the image field involved. In order to evaluate the performance of CMOS image sensor, single even effect and electronic endoscope structures are analyzed and active and passive range finder experiments are carried out. The results show that the imaging based on CMOS sensor can fully meet the requirements of imaging applications in many fields.

3D lithography enable ultrathin flat compound eye for moving object imaging

With a hemispherical surface, the compound eye cameras inspired by arthropod eyes provide a large field of view (FOV), low aberration, and a large depth of field. However, to match the hemisphere-imaging plane, the cameras require a hemisphere-photoelectric sensor instead of a standard planar complementary metal oxide semiconductor (CMOS) sensor. Additionally, the hemispheric shape of the imaging system restricts the miniaturization of high-performance compound eye cameras at the millimeter scale. Here, inspired by the working principle of the Fresnel lens, an ultrathin flat compound eye (UFCE) composed of an off-axis microlens array (OMLA) was developed. 3D lithography enabled the fabrication of the UFCE with a complex morphology. Compared to the traditional artificial compound eye (ACE), the thickness of the UFCE was greatly reduced. Meanwhile, a flat substrate and ultrathin structure allowed for direct integration of the UFCE into the surface of a CMOS. The resultant UFCE had a FOV of up to 110° and a resolution close to the diffraction limit and low dispersion. Furthermore, the UFCE allowed for fast imaging of mobile objects in any plane within the depth of field, which is the unique function of the UFCE. In brief, the fabricated UFCE based on OMLA reduces the complexity of constructing compound eye cameras while significantly optimizing the volume, suggesting an alternative method for creating high-performing optical elements with the possibility of simple integration and miniaturization.

LL-CSFormer: A Novel Image Denoiser for Intensified CMOS Sensing Images under a Low Light Environment

Intensified complementary metal-oxide semiconductor (ICMOS) sensors can capture images under extremely low-light conditions (≤0.01 lux illumination), but the results exhibit spatially clustered noise that seriously damages the structural information. Existing image-denoising methods mainly focus on simulated noise and real noise from normal CMOS sensors, which can easily mistake the ICMOS noise for the latent image texture. To solve this problem, we propose a low-light cross-scale transformer (LL-CSFormer) that adopts multi-scale and multi-range learning to better distinguish between the noise and signal in ICMOS sensing images. For multi-scale aspects, the proposed LL-CSFormer designs parallel multi-scale streams and ensures information exchange across different scales to maintain high-resolution spatial information and low-resolution contextual information. For multi-range learning, the network contains both convolutions and transformer blocks, which are able to extract noise-wise local features and signal-wise global features. To enable this, we establish a novel ICMOS image dataset of still noisy bursts under different illumination levels. We also designed a two-stream noise-to-noise training strategy for interactive learning and data augmentation. Experiments were conducted on our proposed ICMOS image dataset, and the results demonstrate that our method is able to effectively remove ICMOS image noise compared with other image-denoising methods using objective and subjective metrics.

Scientific CMOS Sensors in Astronomy: IMX455 and IMX411

Scientific complementary metal-oxide-semiconductor (CMOS) detectors have developed quickly in recent years thanks to their low cost and high availability. They also have some advantages over charge-coupled devices (CCDs), such as high frame rate or typically lower readout noise. These sensors started to be used in astronomy following the development of the first back-illuminated models. Therefore, it is worth studying their characteristics, advantages, and weaknesses. One of the most widespread CMOS sensors are those from the Sony IMX series, which are included in large astronomical survey projects based on small and fast telescopes because of their low cost, and capability for wide-field and high-cadence surveys. In this paper, we aim to characterize the IMX455M and IMX411M sensors, which are integrated into the QHY600 and QHY411 cameras, respectively, for use in astronomical observations. These are large (36 × 24 and 54 × 40 mm) native 16 bit sensors with 3.76 μm pixels and are sensitive in the optical range. We present the results of the laboratory characterization of both cameras. They showed a very low dark current of 0.011 and 0.007 e− px−1 s−1 @–10°C for the QHY600 and QHY411 cameras, respectively. They also show the presence of warm pixels, ∼0.024% in the QHY600 and 0.005% in the QHY411. Warm pixels proved to be stable and linear with exposure time, and are therefore easily corrected using dark frames. Pixels affected by the Salt & Pepper noise are ∼2% of the total and a method to correct for this effect is presented. Both cameras were attached to night telescopes and several on-sky tests were performed to prove their capabilities. On-sky tests demonstrate that these CMOS behave as well as CCDs of similar characteristics and (for example) they can attain photometric accuracies of a few mili-magnitudes.

Engineering Strategies for Advancing Optical Signal Outputs in Smartphone‐Enabled Point‐of‐Care Diagnostics

The use of smartphone‐based analysis systems has been increasing over the past few decades. Among the important reasons for its popularity are its ubiquity, increasing computing power, relatively low cost, and capability to acquire and process data simultaneously in a point‐of‐need fashion. Furthermore, smartphones are equipped with various sensors, especially a complementary metal–oxide–semiconductor (CMOS) sensor. The high sensitivity of the CMOS sensor allows smartphones to be used as a colorimeter, fluorimeter, and spectrometer, constituting the essential part of point‐of‐care testing contributing to E‐health and beyond. However, despite its myriads of merits, smartphone‐based diagnostic devices still face many challenges, including high susceptibility to illumination conditions, difficulty in adapter uniformization, low interphone repeatability, and et al. These problems may hinder smartphone‐enabled diagnosis from passing the FDA regulations of medical devices. This review discusses the design and application of current smartphone‐based diagnostic devices and highlights challenges associated with existent methods and perspectives on how to deal with those challenges from engineering aspects on constant color signal acquisition, including smartphone adapter design, color space transformation, machine learning classification, and color correction.

Effect of different scintillator choices on the X-ray imaging performance of CMOS sensors

The ability of wafer scale Complementary Metal Oxide Semiconductor (CMOS) imagers to integrate sensing with analogue to digital conversion at the pixel level has led to their widespread appeal in a variety of imaging applications. This has led to significant improvement in speed and reduction in read-out noise in these imagers when compared to charge-coupled devices (CCDs) and amorphous silicon/selenium based flat panel imagers (FPIs). This paper compares the performance characteristics of CMOS X-ray detectors in various configurations by varying certain parameters of a typical X-ray detector such as fibre optic face plate (FOP), scintillator substrate coating, sensor pixel pitch and scintillator thickness. The evaluations were carried out using RQA5 (70 kV) radiation beam quality aimed at general radiography applications. At comparable Air Kerma values, detectors with a fibre optic plate showed an overall better DQE performance at most spatial frequencies, starting slightly lower at low frequencies then overtaking the “no-FOP” case at mid and high frequencies. The analysis of detectors with different substrate coatings for the scintillators showed comparatively higher DQE for the white-coated aluminium substrate scintillator compared to the black-coated one. The DQE comparison of detectors with 50μm and 100μm pixel pitch resulted in a higher DQE for the 100μm pixel pitch one, with the caveat that the scintillator was thick enough as to render differences in pMTF negligible. Finally, the comparison of scintillators with varying thicknesses showed that the thickest scintillator yielded the highest DQE. These characterisation studies helped in understanding the suitability of these different configurations in various general radiography application scenarios and could be of help to prospective users to determine the overall configuration that best fits their specific imaging needs.

Improving the X-Ray Energy Resolution of a Scientific CMOS Detector by Pixel-level Gain Correction

Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices such as a higher readout frame rate, higher radiation tolerance, and higher working temperature. In this work, we investigate the performance at the individual pixel level of a large-format sCMOS sensor, GSENSE1516BSI, which has 4096 × 4096 pixels, each of 15 μm in size. To achieve this, three areas on the sCMOS sensor, each consisting of 99 × 99 pixels, are chosen for the experiment. The readout noise, conversion gain and energy resolutions of the individual pixels in these areas are measured from a large number (more than 25,000) of X-ray events accumulated for each of the pixels through long time exposures. The energy resolution of these pixels can reach 140 eV at 6.4 keV at room temperature and shows a significant positive correlation with the readout noise. The accurate gain can also be derived individually for each of the pixels from its X-ray spectrum obtained. Variations of the gain values are found at a level of 0.56% statistically among the 30 thousand pixels in the areas studied. With the gain of each pixel determined accurately, a precise gain correction is performed pixel by pixel in these areas, in contrast to the standardized ensemble gain used in the conventional method. In this way, we could almost completely eliminate the degradation of energy resolutions caused by gain variations among pixels. As a result, the energy resolution at room temperature can be significantly improved to 124.6 eV at 4.5 keV and 140.7 eV at 6.4 keV. This pixel-by-pixel gain correction method can be applied to all kinds of CMOS sensors, and is expected to find interesting applications in X-ray spectroscopic observations in the future.

The Utility of RGB Color for Discrimination of Lunar Maturity and Composition

AbstractWe explore the extent to which red‐green‐blue (RGB) color images, such as those produced by a complementary metal oxide semiconductor (CMOS) Bayer‐filter camera, can be utilized for studying the maturity and composition of the lunar surface. RGB filters typically are quite broad, with considerable overlap among the three colors. Convolution of laboratory spectra for lunar samples to the RGB responsivities of the Chang'E‐3 rover's Panoramic Camera allowed determination of the correlations between color ratios (B/R, B/G, and G/R) and the sample maturity (Is/FeO) or composition (wt.% FeO or TiO2). In general, color ratios decrease as Is/FeO increases. When separate sample categories are considered, we find that the B/R ratio is a good predictor of Is/FeO for low‐Ti mare, low‐Fe highland, and moderate‐Fe highland soils. For high‐Ti mare soils, Is/FeO has little influence on the B/R ratio (due to the spectral effects of abundant ilmenite), and hence the ratio cannot be used to determine maturity. We also find that color ratios have no useful correlation with sample wt.% FeO or TiO2. Thus, in locations excluding the high‐Ti maria, RGB color data could be used to estimate soil maturity. We outline a concept for a multispectral imager based on a CMOS sensor with a Bayer‐like pattern of custom‐wavelength filters chosen specifically for lunar science applications.

Evaluation of a complementary metal oxide semiconductor detector as a tool for stereotactic body radiotherapy plan quality assurance.

A sub-mm resolution Complementary Metal Oxide Semiconductor sensor has been developed for stereotactic radiotherapy quality assurance. Herein we evaluate its basic dosimetric performance and its application for linac C-arm stereotactic body radiotherapy (SBRT) plan quality assurance. The detector was integrated into its accompanying phantom or in Water Equivalent Plastic (WEP). The measurement reproducibility, stability, dose linearity and dependence on angularity, dose rate and field size were investigated. Clinical plan measurements were compared to our radiotherapy treatment planning system and radiochromic film. Sensitivity to introduced Multi Leaf Collimator (MLC) offsets was evaluated by simulating single MLC offsets in SBRT plans and comparing measurements to expected doses. Signal reproducibility was within±0.1% and output calibration was stable over a 6month period. Detector showed good linearity with dose (r2=1). Signal decreased by 5% when dose rate was decreased from 1300 MU/min to 300 MU/min. Output factors agreed within 0.5% of chamber measurements for 1x1 cm field sizes or greater. Angularity measurements showed good agreement with reference. For measurement of planned clinical doses, gamma pass-rates were 98.5%±2.3% (treatment planning system reference, 2%/2mm) and 99.2%±1.0% (film reference, 2%,2mm). The detector also showed sensitivity to errors of 1mm offsets in MLC positioning. The detector performed well when used for pre-treatment SBRT plan quality assurance, offering a good alternative to radiochromic film.

Determining the Focal Length of Converging and Diverging Lenses Using a Smartphone

In this study, we propose a novel and direct method of determining the focal length of a converging or diverging lens using a smartphone. The standard optical sensor used in modern smartphone cameras is an active-pixel sensor called the complementary metal–oxide–semiconductor (CMOS). The CMOS is covered by an assembly of five to seven camera lenses that can be moved along the axis of the camera to electronically adjust its overall effective focal length, i.e., the autofocus feature. This collection of lenses, referred to as a system of adaptive optical lenses, can be treated as a single effective converging lens that forms a real image on the CMOS sensor array. We assume that the image distance between the CMOS sensor array and the smartphone camera lens (SCL) is a constant. Based on this assumption, a two-step procedure is proposed to accurately obtain the focal length of a lens without the need for additional lenses.

Multiplexed Chemical Sensing CMOS Imager.

A miniaturized and multiplexed chemical sensing technology is urgently needed to empower mobile devices and robots for various new applications such as mobile health and Internet of Things. Here, we show that a complementary metal-oxide-semiconductor (CMOS) imager can be turned into a multiplexed colorimetric sensing chip by coating micron-scale sensing spots on the CMOS imager surface. Each sensing spot contains nanocomposites of colorimetric sensing probes and silica nanoparticles that enhance sensing signals by several orders of magnitude. The sensitivity is spot-size-invariant, and high-performance gas sensing can be achieved on sensing spots as small as ∼10 μm. This great scalability combined with millions of pixels of a CMOS imager offers a promising platform for highly integrated chemical sensors. To prove its compatibility with mobile electronics, we have built a smartphone accessory based on this chemical CMOS sensor and demonstrated that personal health management can be achieved through the detection of gaseous biomarkers and pollutants. We anticipate that this new platform will pave the way for the widespread application of chemical sensing in mobile electronics and wearable devices.

Diagnostic efficacy of 3 imaging modalities in the detection of fractured endodontic instruments: an in vitro study

<h3>Objectives</h3> To compare the diagnostic efficacy of periapical radiography (PAR) and cone beam computed tomography (CBCT) without and with a metal artifact reduction algorithm (MARA) in the detection of fractured endodontic instruments in unfilled and filled root canals that were straight and curved. <h3>Study Design</h3> In total, 144 root canals from 48 mandibular molars were divided into 4 groups: the control group with empty canals, the fracture group with a fractured instrument, the fill group with root canal filling, and the fracture/fill group with a fractured instrument and root canal filling. The teeth were examined with PAR using a complementary metal oxide semiconductor sensor and CBCT without and with MARA to evaluate the diagnostic efficacy of the 3 techniques in the detection of fractured instruments. Three examiners evaluated the radiographs. <h3>Results</h3> Overall, PAR exhibited significantly better diagnostic outcomes than CBCT without MARA. PAR yielded significantly better results than both CBCT protocols in the presence of root filling and in straight canals. In the absence of filling and in curved canals, there were no statistically significant differences among the 3 techniques. <h3>Conclusions</h3> PAR was the imaging technique that best detected fractured instruments in filled and unfilled straight root canals.

Ultra-high-resolution quanta image sensor with reliable photon-number-resolving and high dynamic range capabilities

Superior low-light and high dynamic range (HDR) imaging performance with ultra-high pixel resolution are widely sought after in the imaging world. The quanta image sensor (QIS) concept was proposed in 2005 as the next paradigm in solid-state image sensors after charge coupled devices (CCD) and complementary metal oxide semiconductor (CMOS) active pixel sensors. This next-generation image sensor would contain hundreds of millions to billions of small pixels with photon-number-resolving and HDR capabilities, providing superior imaging performance over CCD and conventional CMOS sensors. In this article, we present a 163 megapixel QIS that enables both reliable photon-number-resolving and high dynamic range imaging in a single device. This is the highest pixel resolution ever reported among low-noise image sensors with photon-number-resolving capability. This QIS was fabricated with a standard, state-of-the-art CMOS process with 2-layer wafer stacking and backside illumination. Reliable photon-number-resolving is demonstrated with an average read noise of 0.35 e- rms at room temperature operation, enabling industry leading low-light imaging performance. Additionally, a dynamic range of 95 dB is realized due to the extremely low noise floor and an extended full-well capacity of 20k e-. The design, operating principles, experimental results, and imaging performance of this QIS device are discussed.