Effect of different scintillator choices on the X-ray imaging performance of CMOS sensors

Abstract

The ability of wafer scale Complementary Metal Oxide Semiconductor (CMOS) imagers to integrate sensing with analogue to digital conversion at the pixel level has led to their widespread appeal in a variety of imaging applications. This has led to significant improvement in speed and reduction in read-out noise in these imagers when compared to charge-coupled devices (CCDs) and amorphous silicon/selenium based flat panel imagers (FPIs). This paper compares the performance characteristics of CMOS X-ray detectors in various configurations by varying certain parameters of a typical X-ray detector such as fibre optic face plate (FOP), scintillator substrate coating, sensor pixel pitch and scintillator thickness. The evaluations were carried out using RQA5 (70 kV) radiation beam quality aimed at general radiography applications. At comparable Air Kerma values, detectors with a fibre optic plate showed an overall better DQE performance at most spatial frequencies, starting slightly lower at low frequencies then overtaking the “no-FOP” case at mid and high frequencies. The analysis of detectors with different substrate coatings for the scintillators showed comparatively higher DQE for the white-coated aluminium substrate scintillator compared to the black-coated one. The DQE comparison of detectors with 50μm and 100μm pixel pitch resulted in a higher DQE for the 100μm pixel pitch one, with the caveat that the scintillator was thick enough as to render differences in pMTF negligible. Finally, the comparison of scintillators with varying thicknesses showed that the thickest scintillator yielded the highest DQE. These characterisation studies helped in understanding the suitability of these different configurations in various general radiography application scenarios and could be of help to prospective users to determine the overall configuration that best fits their specific imaging needs.