Complementary Metal Oxide Semiconductor Process Research Articles

Effects of Thickness and Anisotropic Strain on Polarization Switching Properties of Sub-10nm Epitaxial Hf0.5Zr0.5O2 Thin Films

Abstract Doped HfO2-based ferroelectric (FE) films are emerging as leading contenders for next-generation FE non-volatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and robust ferroelectricity at nanoscale dimensions. Despite the considerable attention paid to the FE properties of HfO2-based films in recent years, enhancing their polarization switching speed remains a critical research challenge. We demonstrate the strong ferroelectricity of sub-10 nm Hf0.5Zr0.5O2 (HZO) thin films and show that the polarization switching speed of these thin films can be significantly affected by HZO thickness and anisotropically strained La0.67Sr0.33MO3-buffered layer. Our observations indicate that the HZO thin film thickness and anisotropically strained La0.67Sr0.33MO3 layer influence the nucleation of reverse domains by altering the phase composition of the HZO thin film, thereby reducing the polarization switching time. Although the increase in HZO thickness and anisotropic compressive strain hinder the formation of the FE phase, they can enable faster switching. Our findings suggest that FE HZO ultrathin films with polar orthorhombic structures have broad application prospects in microelectronic devices. These insights into novel methods for increasing polarization switching speed are poised to advance the development of high-performance FE devices.

Silicon rich nitride: a platform for controllable structural colors

Abstract High refractive index dielectric materials like silicon rich nitride (SRN) are critical for constructing advanced dielectric metasurfaces but are limited by transparency and complementary metal oxide semiconductor (CMOS) process compatibility. SRN’s refractive index can be adjusted by varying the silicon to nitride ratio, although this increases absorption, particularly in the blue spectrum. Dielectric metasurfaces, which utilize the material’s high dielectric constant and nano-resonator geometry, experience loss amplification due to resonance, affecting light reflection, light transmission, and quality factor. This study explores the impact of varying the silicon ratio on structural color applications in metasurfaces, using metrics such as gamut coverage, saturation, and reflection amplitude. We found that a higher SRN ratio enhances these metrics, making it ideal for producing vivid structural colors. Our results show that SRN can produce a color spectrum covering up to 166 % of the sRGB space and a resolution of 38,000 dots per inch. Fabricated samples vividly displayed a parrot, a flower, and a rainbow, illustrating SRN’s potential for high-resolution applications. We also show that SRN can provide a better CIE diagram coverage than other popular metasurfaces materials. These findings highlight the advantages of SRN for photonic devices, suggesting pathways for further material and application development.

Large-scale fabrication of meta-axicon with circular polarization on CMOS platform

Abstract Metasurfaces, consisting of arrays of subwavelength structures, are lightweight and compact while being capable of implementing the functions of traditional bulky optical components. Furthermore, they have the potential to significantly improve complex optical systems in terms of space and cost, as they can simultaneously implement multiple functions. The wafer-scale mass production method based on the CMOS (complementary metal oxide semiconductor) process plays a crucial role in the modern semiconductor industry. This approach can also be applied to the production of metasurfaces, thereby accelerating the entry of metasurfaces into industrial applications. In this study, we demonstrated the mass production of large-area meta-axicons with a diameter of 2 mm on an 8-inch wafer using DUV (Deep Ultraviolet) photolithography. The proposed meta-axicon designed here is based on PB (Pancharatnam–Berry) phase and is engineered to simultaneously modulate the phase and polarization of light. In practice, the fabricated meta-axicon generated a circularly polarized Bessel beam with a depth of focus (DoF) of approximately 2.3 mm in the vicinity of 980 nm. We anticipate that the mass production of large-area meta-axicons on this CMOS platform can offer various advantages in optical communication, laser drilling, optical trapping, and tweezing applications.

Real-time, specific, and label-free transistor-based sensing of organophosphates in liquid

Organophosphates (OP), commonly used in agriculture and as chemical warfare agents, pose significant environmental risks, necessitating real-time, low-cost OP detection methods. In particular, liquid-phase OP sensing with minimal sample volumes is crucial. While several methods allow rapid detection of low concentrations of OP vapors, they are effective only in the short term, while vapors are still being produced. Many OP compounds are semi-volatile, leading to the contamination of water, soil, and surfaces, posing a risk of secondary, long-term exposure. Detecting this contamination requires methods that can be directly applied to droplets of the affected medium. Currently, no method provides the desired combination of ultra-sensitivity, quantitative detection, rapid response, and low-cost for detecting OPs in liquid samples. This study aims to demonstrate quantitative, low-cost, real-time, specific, and label-free OP sensing in ultra-small samples using a transistor-based approach. The current work employs the 2-(4-Aminophenyl)-1,1,1,3,3,3-hexafluoro-2-propanol (aminophenyl-HFIP) functionalized meta-nano-channel field-effect chemical sensor (MNChem sensor) to monitor the organophosphate, diethyl cyanophosphonate (DCNP), in liquid samples. The silicon component of the MNChem is fabricated using a complementary metal-oxide semiconductor (CMOS) process, and the amine-based chemical functionalization of the sensing area is performed post-fabrication. The MNChem sensor provides electrostatic control over the source-drain current (IDS), allowing an optimized channel configuration that efficiently transduces localized OP recognition events into significant IDS variations. Sensing is performed using 0.5 μL buffer solution to simulate a miniature field-deployable sensor for on-site liquid analysis. We report the sensing of DCNP with a limit-of-detection of 100 fg/mL, a dynamic range of 9 orders of magnitude, and excellent linearity (≥0.97) and sensitivity. Control measurements confirm the specificity and reliability of the sensor's response, validating its applicability. This study introduces a novel method for OP detection in contaminated droplets using a low-cost disposable transistor technology.

Impact of Deposition Temperature on Structural and Electrical Properties of Sputtered AlN/ Si (111) for CMOS compatible MEMS

Aluminium nitride (AlN) thin films are grown by reactive sputtering on Silicon (Si) with (111) orientation at low temperature (< 450 °C) for piezoelectric-based micro-electromechanical systems (MEMS). The grown AlN thin films were polycrystalline wurtzite hexagonal structure with a high texture coefficient for the (002) plane of orientation. The leakage current density by the current-voltage (I-V) measurement was found to be as low as 1.6 ×10-6Acm−2 in the grown films. The trapped charges are crucial in controlling these electrical characteristics, and low interface trap density (6.72 ×1010cm−2 eV) was observed for the sputtered AlN grown at a substrate temperature of 300 °C. This study on the structural and electrical properties of AlN/Si (111) at low substrate temperature is compatible with the complementary metal oxide semiconductor (CMOS) process for constructing piezoelectric-based MEMS devices for various applications.

Fabrication and evaluation of a CMOS-based energy harvesting chip integrating photovoltaic and thermoelectric energy harvesters

This study explores the development of an energy harvesting chip (EHC) using a complementary metal oxide semiconductor (CMOS) process, addressing the need for efficient micro-scale energy harvesters in modern electronics. The EHC integrates a thermoelectric energy harvester (TEH) and a photovoltaic energy harvester (PEH) to maximize energy conversion efficiency. A key challenge in TEH design is enhancing power output, which is addressed by suspending the cold ends of 41 thermocouples within the TEH structure through post-processing. Experimental methods were employed to assess the performance of the TEH, revealing an output voltage of 21.4 mV and a maximum output power of 9.32 nW under a 3 K temperature difference. The TEH demonstrated a voltage factor of 8.9 mV/(mm2·K) and a power factor of 1.3 nW/(mm2·K2). The PEH was designed with novel patterned p-n junctions, integrating lightly doped n-type regions with interdigitated p-type doping to increase junction density, resulting in high conversion efficiency. The experimental results confirm the effectiveness of the EHC design, showcasing its potential in energy harvesting applications.

Ultrasensitive integrated circuit sensors based on high-order non-Hermitian topological physics.

High-precision sensors are of fundamental importance in modern society and technology. Although numerous sensors have been developed, obtaining sensors with higher levels of sensitivity and stronger robustness has always been expected. Here, we propose theoretically and demonstrate experimentally an alternative class of sensors with superior performances based on exotic properties of high-order non-Hermitian topological physics. The frequency shift induced by perturbations for these sensors can show an exponential growth with respect to the size of the device, which can grow well beyond the limitations of conventional sensors. The fully integrated circuit chips have been designed and fabricated in a standard 65-nanometer complementary metal-oxide semiconductor process technology. Not only has the sensitivity of systems less than 10-3 femtofarad been experimentally verified, but these systems are also robust against disorders. Our proposed ultrasensitive integrated circuit sensors can have a wide range of applications in various fields and show an exciting prospect for next-generation sensing technologies.

Numerical simulation of electrically-pumped overgrown III-V microwire lasers on silicon

Electrically-pumped III-V lasers on Si by aspect ratio trapping (ART) techniques have been a promising candidate for Si-based light sources. Although the lasers based on the ART approach enable large-scale integration and are compatible with complementary metal-oxide semiconductor processes, the sub-micron size laser structure suffers from severe metal absorption loss and heat accumulation. In this paper, we propose a novel Si-based III-V multi-quantum well laser by ART methods. The overgrowth of III-V microwires is adopted, with additional {110} quantum wells (QWs) generated during epitaxy. Through numerical simulation, the mode loss of the overgrowth structure is reduced from 3.59 dB/cm to 0.96 dB/cm, the threshold current is decreased by 42.5% and the output power is increased by 91.7% under pulsed conditions. Due to the growth of QWs on {110} planes, the injection efficiency of the device increases, leading to an improvement of performance. The effects of temperature and cavity length on the lasing characteristics of the device under continuous wave (CW) conditions are also analyzed that the proposed structure can realize CW lasing at room temperature. Moreover, the device deterioration caused by growth defects is discussed, which can be improved by high reflection coating. The suggested Si-based overgrowth III-V microwire laser has great potential to integrate high-density electrically-pumped light sources for silicon photonics.

Design and application of D‐band bandpass filter based on 0.18 μm complementary metal oxide semiconductor process

AbstractThis paper designs a bandpass filter for D‐band and 0.18 μm complementary metal oxide semiconductor (CMOS) process. The bandpass filter is composed of an inverted L‐shaped coupling microstrip line and a cross‐coupled resonator, and is coupled to produce two controlled transmission zeros. A defected ground structure is used to make a good impedance match. The designed filter has a 3 dB impedance bandwidth of 52 GHz (149–201 GHz) with a center frequency of 175 GHz and an insertion loss of 3.23 dB. The design of this paper is a CMOS 0.18 μm process capable of applying the D‐band bandpass filter with the advantages of lower insertion loss, broadband, and compact size.

Switching regulator based on an adaptive DC-DC buck converter for a lithium-ion battery charging interface

A switching regulator based on an adaptive DC-DC buck converter for a Li-ion battery charging interface is introduced in this paper with the aim of improving the efficiency of charging the Li-ion battery during the whole charging process. By using the battery voltage as feedback, an adaptive reference is generated. This reference is employed by the converter, which is in continuous conduction mode (CCM), to produce a wide adaptive output voltage that closely tracks the battery voltage, intended to serve as the power source for the multimode charging interface. The converter was implemented in a 180 nm complementary metal oxide semiconductor (CMOS) process and simulated using the Cadence Virtuoso tool. With an input voltage of 5 V and a switching frequency selected at 500 kHz, the simulation results show that the converter produces different charging currents for each battery charging mode, and an adaptive output voltage ranging from 2.8 V to 4.38 V, with the current ripple of 38 mA in CC mode and voltage ripple factor less than 1% in constant voltage (CV) mode. The average converter efficiency is 83.5%.

Design of SEE-Tolerant analog switch chip with a novel diode structure *

This paper proposes a novel circuit-level design in order to enhance the radiation tolerance of an analog switch integrated circuit. After analyzing the mechanisms of single-particle sensitivity in a high-voltage analog switch chip fabricated using a commercial 1 μm complementary metal–oxide–semiconductor process, a diode unit was employed to reduce the V GS (voltage between the gate and the base) of the parasitic triode within the metal–oxide–semiconductor field-effect transistor of the switch. This reduction lowered the probability of activating the parasitic triode in response to single-event effect (SEE). Subsequently, single-particle irradiation experiments proceeded with the high-voltage analog switch chip, both with and without the diode unit. In the unreinforced device, the current of the power supply reached 100 mA within 11 s of single-particle irradiation at 75.8 MeV•cm2 mg−1. In contrast, in the reinforced device, the current of the power supply remained relatively stable under irradiation at both 37.2 and 75.8 MeV•cm2 mg−1. These findings indicate that the reinforced analog switch chip exhibits an SEE tolerance exceeding 75.8 MeV•cm2 mg−1, highlighting its potential to enhance the radiation tolerance of analog switches.

Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor by introducing a protective HfO2 layer

Interfacial differences between the Hf0.5Zr0.5O2 (HZO) and the top/bottom electrodes caused by the process sequence could lead to the imprint effect of the TiN/HZO/TiN ferroelectric capacitor, which leads to serious reliability problems. In this article, a method of introducing a HfO2 protective layer is proposed to inhibit the imprint effect of the TiN/HZO/TiN ferroelectric capacitor. By introducing the HfO2 protective layer, the leakage current at the positive electric field is reduced by three orders of magnitude, the asymmetry of the coercive field is reduced from 1.5 to 0.1 MV/cm, and the endurance is improved by two orders of magnitude with no degradation in retention. The proposed method provides a feasible strategy to inhibit the imprint effect of TiN/HZO/TiN ferroelectric capacitors and is more compatible with complementary metal–oxide–semiconductor processes.

Ultra-low-power super class-AB adaptive biasing operational transconductance amplifier with enhanced gain for biomedical applications

The operational transconductance amplifier (OTA) proposed in this article is a bulk-driven (BD), single-stage, super-class-AB, adaptive biasing, functioning in the subthreshold region (ST) with an enormously low power supply of ± 0.25 V, providing high-gain. The input core of the OTA circuit is composed of adaptively biased BD differential input pairs based on flipped voltage follower (FVF), which drive in class-AB mode with a partial positive feedback (PPF) approach. The circuit additionally employs FVF and self-cascode (SC)-based low-power current mirror loads at its output to obtain significantly high gain and unity gain frequency. In addition, using adaptive loads based on source-degenerated metal oxide semiconductor (MOS) resistors raises dynamic current more efficiently, consequently improving the slew rate and unity gain frequency (UGF) without drawing additional power. Employing the cadence spectre tool and the UMC 0.18 μm complementary metal oxide semiconductor (CMOS) process technology, the designed OTA has been simulated. The simulation outcomes substantiate that the amplifier provides high open loop DC gain of 75 dB, 18.75 kHz UGF with a phase margin of 63.93º, and input-referred noise (IRN) of 0.734 µV/Hz0.5 at 1 kHz frequency. The proposed OTA consumes just 60.15 nW of power. The performance results confirmed that the proposed OTA circuit is appropriate in biomedical applications.

Maximizing the Synaptic Efficiency of Ferroelectric Tunnel Junction Devices Using a Switching Mechanism Hidden in an Identical Pulse Programming Learning Scheme

Memristors play a pivotal role in advanced computing, with memristor‐based crossbar arrays showing promise for various artificial neural networks. Among these, HfO2‐based ferroelectric tunnel junctions (FTJs) stand out as ideal synaptic devices for neuromorphic computing. Their compatibility with the complementary metal oxide semiconductor process and intrinsic energy efficiency make them particularly appealing. While an increasing number of studies adopt identical pulse programming (IPP) with short width to update the conductance of HfO2‐based FTJs synaptic devices, conventional ferroelectric switching models fall short in describing updates the conductance with the IPP scheme. Consequently, studies achieving conductance updates via IPP lack an underlying mechanism explanation, potentially limiting the application of HfO2‐based FTJs as synaptic devices. This study explores the potential of ferroelectric Zr‐doped HfO2 (HZO) FTJs to undergo learning through the IPP scheme. Synaptic characteristics, including the number of conductance states, symmetry, linearity, write energy, and latency by modulating IPP scheme conditions are optimized. Finally, the applicability of HZO FTJ as a synaptic device by assessing learning accuracy in pattern recognition through artificial neural network simulation based on the optimized synaptic characteristics is evaluated.

P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits.

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.

Harnessing the power of temperature gradient-enhanced pyroelectricity: self-powered temperature/light detection in Ce-doped HfO2 ferroelectric films with downward spontaneous polarization

Ferroelectric materials are ideal for self-powered sensors in Internet of Things (IoT) and high-precision detection systems due to their excellent polarization properties. Compatibility with miniaturization, high-density systems, and complementary metal oxide semiconductor (CMOS) processes is crucial for their widespread adoption. HfO2-based ferroelectric films show potential in self-powered pyroelectric sensors as their thinness enables effective temperature and light detection. However, the disordered ferroelectric domain distribution limits their pyroelectric performance and hampers the development of highly integrated self-powered pyroelectric devices. This report investigates the temperature and light detection capabilities of Ce-doped HfO2 ferroelectric films, which exhibit as-grown spontaneous polarization in the downward direction, making them a promising option for self-powered pyroelectric sensors. The findings provide robust evidence that the introduction of a temperature gradient significantly enhances pyroelectricity. In addition, their applications in the detection of hot/cold wind and breathing have been proved. Notably, the 30 nm thick Ce-doped HfO2 ferroelectric film has a high pyroelectric coefficient of about 894.7 μC·m–2·K–1 and enables high-precision detection of changes in temperature of 0.1 K. This study highlights the potential application of HfO2-based ferroelectric films in self-powered sensors with temperature and light detection capabilities, making them a promising candidate for future IoT-based systems and high-precision detection systems.

A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector

Avalanche photodetectors (APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication (SACM) APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator (SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at −21 V, indicating a breakdown voltage greater than −21 V for the device. The APDs exhibit a unit-gain responsivity of 0.5 A/W at −10 V. At −15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of −10 and −25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of −15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor (LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at −21 V and −9 dBm input power reveal signal to noise ratio (SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor (CMOS) process, shows that utilizing the peaking effect at low optical power increases bandwidth.

Nonlinear photonics on integrated platforms

Abstract Nonlinear photonics has unveiled new avenues for applications in metrology, spectroscopy, and optical communications. Recently, there has been a surge of interest in integrated platforms, attributed to their fundamental benefits, including compatibility with complementary metal-oxide semiconductor (CMOS) processes, reduced power consumption, compactness, and cost-effectiveness. This paper provides a comprehensive review of the key nonlinear effects and material properties utilized in integrated platforms. It discusses the applications and significant achievements in supercontinuum generation, a key nonlinear phenomenon. Additionally, the evolution of chip-based optical frequency combs is reviewed, highlighting recent pivotal works across four main categories. The paper also examines the recent advances in on-chip switching, computing, signal processing, microwave generation, and quantum applications. Finally, it provides perspectives on the development and challenges of nonlinear photonics in integrated platforms, offering insights into future directions for this rapidly evolving field.

Biocompatibility characterisation of CMOS-based Lab-on-Chip electrochemical sensors for in vitro cancer cell culture applications

Lab-on-Chip electrochemical sensors, such as Ion-Sensitive Field-Effect Transistors (ISFETs), are being developed for use in point-of-care diagnostics, such as pH detection of tumour microenvironments, due to their integration with standard Complementary Metal Oxide Semiconductor (CMOS) technology. With this approach, the passivation of the CMOS process is used as a sensing layer to minimise post-processing, and Silicon Nitride (Si3N4) is the most common material at the microchip surface. ISFETs have the potential to be used for cell-based assays however, there is a poor understanding of the biocompatibility of microchip surfaces. Here, we quantitatively evaluated cell adhesion, morphogenesis, proliferation and mechano-responsiveness of both normal and cancer cells cultured on a Si3N4, sensor surface. We demonstrate that both normal and cancer cell adhesion decreased on Si3N4. Activation of the mechano-responsive transcription regulators, YAP/TAZ, are significantly decreased in cancer cells on Si3N4 in comparison to standard cell culture plastic, whilst proliferation marker, Ki67, expression markedly increased. Non-tumorigenic cells on chip showed less sensitivity to culture on Si3N4 than cancer cells. Treatment with extracellular matrix components increased cell adhesion in normal and cancer cell cultures, surpassing the adhesiveness of plastic alone. Moreover, poly-l-ornithine and laminin treatment restored YAP/TAZ levels in both non-tumorigenic and cancer cells to levels comparable to those observed on plastic. Thus, engineering the electrochemical sensor surface with treatments will provide a more physiologically relevant environment for future cell-based assay development on chip.

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2.

Investigations on fluorite-structured ferroelectric HfO2/ZrO2 thin films are aiming to achieve high-performance films required for memory and computing technologies. These films exhibit excellent scalability and compatibility with the complementary metal-oxide semiconductor process used by semiconductor foundries, but stabilizing ferroelectric properties with a low operation voltage in the as-fabricated state of these films is a critical component for technology advancement. After removing the influence of interfacial layers, a linear correlation is observed between the biaxial strain and the electric field for transforming the nonferroelectric tetragonal to the ferroelectric orthorhombic phase in ZrO2 thin films. This observation is supported by applying the principle of energy conservation in combination with ab initio and molecular dynamics simulations. According to the simulations, a rarely reported Pnm21 orthorhombic phase may be stabilized by tuning biaxial strain in the ZrO2 films. This study demonstrates the significant influence of interfacial layers and biaxial strain on the phase transition fields and shows how strain engineering can be used to improve ferroelectric wake-up in ZrO2.