Compact Modulator Research Articles

A New Method to Enhance the Light–Matter Interaction by Controlling the Resonance of Electrons

The manipulation of surface plasmon polaritons (SPPs) plays an essential role in plasmonic science and technology. However, the modulation efficiency and size of the device in the traditional method suffer from weak light–matter interaction. Herein, we propose a new method to enhance the light–matter interaction by controlling the resonance of electrons in a sandwich structure which is composed of an interdigital electrode, dielectric, and doped semiconductor. The numerical results show that the resonance of electrons occurs when their vibrational frequency under electrostatic field matches well with the oscillation frequency of the propagating SPPs. The intensity of the electric field is enhanced about 8%, which can be utilized to improve the modulation efficiency and minimize the footprint of device to a great extent. These findings pave a new way towards higher precision sensor and more compact modulator.

Analysis of SiNx Waveguide-Integrated Liquid Crystal Platform for Wideband Optical Phase Shifters and Modulators

In this study, the potential of employing SiNx (silicon nitride) waveguide platforms to enable the use of liquid-crystal-based phase shifters for on-chip optical modulators was thoroughly investigated using 3D-FDTD (3D finite-difference time-domain) simulations. The entire structure of liquid-crystal-based Mach–Zehnder interferometer (MZI) optical modulators, consisting of multi-mode interferometer splitters, different tapering sections, and liquid-crystal-based phase shifters, was systematically and holistically investigated with a view to developing a compact, wideband, and CMOS-compatible (complementary metal-oxide semiconductor) bias voltage optical modulator with competitive modulation efficiency, good fabrication tolerance, and single-mode operation using the same SiNx waveguide layer for the entire device. The trade-off between several important parameters is critically discussed in order to reach a conclusion on the possible optimized parameter sets. Contrary to previous demonstrations, this investigation focused on the potential of achieving such an optical device using the same SiNx waveguide layer for the entire device, including both the passive and active regions. Significantly, we show that it is necessary to carefully select the phase shifter length of the LC-based (liquid crystal) MZI optical modulator, as the phase shifter length required to obtain a π phase shift could be as low as a few tens of microns; therefore, a phase shifter length that is too long can contradictorily worsen the optical modulation.

Foundry fabricated compact slow-light Mach-Zehnder modulator and photodetector for on-chip analog photonic computing.

This work presents a scaling pathway of on-chip analog photonic computing using foundry-fabricated silicon electro-optic (EO) slow-light Mach-Zehnder modulators (SL-MZMs) and compact Ge photodetectors (PDs) to construct a computing unit. Two SL-MZMs with phase shifter (PS) lengths of 500 μm and 150 μm are studied in this work. The bit resolution, nonlinearity, clock frequency, and power consumption of the photonic computing link, including an RF amplifier, on-chip SL-MZM, and a PD, are thoroughly investigated. The computing link using the SL-MZM with 500 μm has demonstrated a low normalized mean square error (NMSE) of 0.0305 at 8-bit resolution under 3.2 GHz clock frequency. Under the setting of 6-bit resolution at a clock frequency of 800 MHz, high computing accuracy was achieved with a measured NMSE of 0.0018 using the SL-MZM with 150 μm PS length. Using the Google Speed Commands dataset to run a voice keyword spotting task, we determine that 6-bit resolution operating at 3.2 GHz achieves the optimal power-accuracy trade-off. We show a 20× improvement in energy efficiency and a 3.35× improvement in area efficiency compared to NVIDIA V100 GPU ["Volta: Performance and programmability," IEEE Micro38(2), 42 (2018)10.1109/MM.2018.022071134]. These results show that our compact SL-MZMs and PDs promise to scale up photonic computing for practical machine-learning applications.

Strain-concentration for fast, compact photonic modulation and non-volatile memory

A critical figure of merit (FoM) for electro-optic (EO) modulators is the transmission change per voltage, dT/dV. Conventional approaches in wave-guided modulators maximize dT/dV via a high EO coefficient or longer light-material interaction lengths but are ultimately limited by material losses and nonlinearities. Optical and RF resonances improve dT/dV at the cost of spectral non-uniformity, especially for high-Q optical cavity resonances. Here, we introduce an EO modulator based on piezo-strain-concentration of a photonic crystal cavity to address both trade-offs: (i) it eliminates the trade-off between dT/dV and waveguide loss—i.e., enhancement of the resonance tuning efficiency dv c /dV for the fixed EO coefficient, waveguide length, and cavity Q—and (ii) at high DC strains it exhibits a non-volatile (NV) cavity tuning Δvc,NV for passive memory and programming of multiple devices into resonance despite fabrication variations. The device is fabricated on a scalable silicon nitride-on-aluminum nitride platform. We measure dv c /dV=177±1MHz/V, corresponding to Δv c =40±0.32GHz for a voltage spanning ±120V with an energy consumption of δU/Δv c =0.17nW/GHz. The modulation bandwidth is flat up to ωBW,3dB/2π=3.2±0.07MHz for broadband DC-AC and 142±17MHz for resonant operation near a 2.8 GHz mechanical resonance. Optical extinction up to 25 dB is obtained via Fano-type interference. Strain-induced beam-buckling modes are programmable under a “read-write” protocol with a continuous, repeatable tuning range of 5±0.25GHz, allowing for storage and retrieval, which we quantify with mutual information of 2.4 bits and a maximum non-volatile excursion of 8 GHz. Using a full piezo-optical finite-element-model (FEM) we identify key design principles for optimizing strain-based modulators and chart a path towards achieving performance comparable to lithium niobate-based modulators and the study of high strain physics on-chip.

All-optical modulator with photonic topological insulator made of metallic quantum wells.

All-optical modulators hold significant prospects for future information processing technologies for they are able to process optical signals without the electro-optical convertor which limits the achievable modulation bandwidth. However, owing to the hardly-controlled optical backscattering in the commonly-used device geometries and the weak optical nonlinearities of the conventional material systems, constructing an all-optical modulator with a large bandwidth and a deep modulation depth in an integration manner is still challenging. Here, we propose an approach to achieving an on-chip ultrafast all-optical modulator with ultra-high modulation efficiency and a small footprint by using photonic topological insulators (PTIs) made of metallic quantum wells (MQWs). Since PTIs have attracted significant attention because of their unidirectional propagating edge states, which mitigate optical backscattering caused by structural imperfections or defects. Meanwhile, MQWs have shown a large Kerr nonlinearity, facilitating the development of minimally sized nonlinear optical devices including all-optical modulators. The proposed photonic topological modulator shows a remarkable modulation depth of 15 dB with a substantial modulation bandwidth above THz in a tiny footprint of only 4 × 10 µm2, which manifests itself as one of the most compact optical modulators compared with the reported ones possessing a bandwidth above 100 GHz. Such a high-performance optical modulator could enable new functionalities in future optical communication and information processing systems.

All-fiber fast acousto-optic temporal control of tunable optical pulses

We demonstrate a new all-fiber electrically tunable modulation method which significantly reduces the response time of a Bragg grating acousto-optic modulator. A 4 cm long device is fabricated with a 1 cm grating inscribed in a suspended core fiber. An acoustic pulse train is switched out of phase along the fiber, damping unwanted natural resonant vibrations inside the grating. The device rise time is decreased from 56 to 9 µs by tuning the duty cycle of the driven electrical signal, contributing to achieve the shortest switching time of 15.6 µs. This tunable temporal response reveals unique features to change the profile of optical pulses. High pulse modulation depths are achieved employing a compact acousto-optic modulator, pointing to fast switching of all-fiber photonic devices.

Thermally reliable compact electro-optic modulators with a low half-wave voltage

Recent advancements in thin-film lithium niobate have led to the development of high-performance integrated electro-optic modulators, which are crucial for modern optical communication systems. These modulators offer tighter mode confinement, a smaller physical footprint, and reduced modulating voltages. This study presents a Mach-Zehnder modulator (MZM) on a silicon nitride-loaded lithium niobate platform using a few-mode waveguide structure. By harnessing the exceptional thermo-optic and electro-optic effects of LiNbO3, we design and simulate this modulator employing multilayer structures with the BeamPROP solver. The modulator has a length of 3.94 mm, a Vπ value of 0.96 V, and a transition temperature (Tg) of 80 °C at 1.55 µm. This proposed modulator exhibits a crosstalk of approximately -42 dB, an extinction ratio of approximately 24 dB, and a maximum transmission of -28 dB for the first-order phase shift. These findings demonstrate the significant potential of this modulator for deployment in high-speed optical communication systems, where maintaining thermal stability and optimizing energy efficiency are paramount.

Strong chiroptical nonlinearity in coherently stacked boron nitride nanotubes.

Nanomaterials with a large chiroptical response and high structural stability are desirable for advanced miniaturized optical and optoelectronic applications. One-dimensional (1D) nanotubes are robust crystals with inherent and continuously tunable chiral geometries. However, their chiroptical response is typically weak and hard to control, due to the diverse structures of the coaxial tubes. Here we demonstrate that as-grown multiwalled boron nitride nanotubes (BNNTs), featuring coherent-stacking structures including near monochirality, homo-handedness and unipolarity among the component tubes, exhibit a scalable nonlinear chiroptical response. This intrinsic architecture produces a strong nonlinear optical response in individual multiwalled BNNTs, enabling second-harmonic generation (SHG) with a conversion efficiency up to 0.01% and output power at the microwatt level-both excellent figures of merit in the 1D nanomaterials family. We further show that the rich chirality of the nanotubes introduces a controllable nonlinear geometric phase, producing a chirality-dependent SHG circular dichroism with values of -0.7 to +0.7. We envision that our 1D chiral platform will enable novel functions in compact nonlinear light sources and modulators.

A Multi-Parameter Tunable and Compact Plasmon Modulator in the Near-Infrared Spectrum

To keep pace with the demands of modern photonic integration technology, the electro-optic modulator should feature multi-parameter tunable components and a compact size. Here, we propose a hybrid structure that can modulate the multi-parameters of surface plasmon polaritons (SPPs) simultaneously with a compact size by controlling the electron concentration of indium tin oxide (ITO) in the near-infrared spectrum. The length, width and height of the device are only 15 μm, 5 μm and 9 μm, respectively. The numerical results show that when the electron concentration in ITO changes from 7.5 × 1026 m−3 to 9.5 × 1026 m−3, the variation in amplitude, wavelength and phase are 49%, 300 nm and 347°, respectively. The demonstrated structure paves a new way for multi-parameter modulation and the realization of ultracompact modulators.

Hybrid plasmonic valley-Hall topological insulators.

The emerging field of photonic topological insulators offers promising platforms for high-performance optical communication, computing, and sensing. However, conventional photonic topological insulator designs typically operate within the diffraction limit due to their dielectric nature. This limitation imposes constraints on device miniaturization, reduces light-matter interaction, and decreases overall device sensitivity. Introducing a new valley-Hall hybrid plasmonic topological insulator, we overcome this limitation by exploiting the coupling of surface plasmon oscillations with the optical modes of a dielectric photonic crystal, allowing for sub-diffraction vertical confinement of light. Deep-subwavelength chiral edge states can, therefore, be generated and robustly guided along disordered Z-shaped topological boundaries with much lower propagation loss compared to purely plasmonic platforms. Such extreme manipulation of light on an integrated chip platform maximizes light-matter interaction and opens the door for truly compact and efficient optical modulators, molecular sensors, and next-generation nanophotonic and quantum devices.

Lithium niobate thin film electro-optic modulator.

The linear electro-optic effect offers a valuable means to control light properties via an external electric field. Lithium niobate (LN), with its high electro-optic coefficients and broad optical transparency ranges, stands out as a prominent material for efficient electro-optic modulators. The recent advent of lithium niobate-on-insulator (LNOI) wafers has sparked renewed interest in LN for compact photonic devices. In this study, we present an electro-optic modulator utilizing a thin LN film sandwiched between top and bottom gold (Au) film electrodes, forming a Fabry-Pérot (F-P) resonator. This resonator exhibits spectral resonance shifts under an applied electric field, enabling efficient modulation of reflected light strength. The modulator achieved a 2.3 % modulation amplitude under ±10 V alternating voltage. Our approach not only presents a simpler fabrication process but also offers larger modulation amplitudes compared to previously reported metasurface based LN electro-optic modulators. Our results open up new opportunities for compact electro-optic modulators with applications in beam steering devices, dynamic holograms, and spatial light modulators, and more.

Compact lithium niobate plasmonic modulator.

Lithium niobate (LN)-based modulators offer superior modulation performances, including high-speed modulation, linearity, and temperature stability. However, these devices exhibit larger sizes due to the low light-matter interaction despite a significant electro-optic coefficient. In this work, we present a compact LN-based modulator using a plasmonic mode that confines the optical mode in a very narrow gap. By filling the gap with LN, the confinement factor in the LN is significantly enhanced. The proposed modulator provides an extremely small half-wave voltage-length product, VπL of 0.02 V/cm at an optical communication wavelength (λ = 1.55 µm). The proposed modulator scheme can be utilized in a wide range of optical communication devices that demand small footprints and a high-speed operation.

Enhanced terahertz third-harmonic generation based on the graphene-assisted meta-grating structure

The nonlinear response of optical materials provides a valuable approach for optical switching and nonlinear frequency conversion. However, the nonlinear responses of bulk crystals are often very weak, requiring higher pump energy for pumping. In this work, we investigate the significant enhancement of third harmonic generation (THG) at terahertz frequencies using an ultra-thin nonlinear meta-grating metasurface assisted by graphene strips. In this structure, the incident pump light experiences strong confinement and enhancement along the graphene surface caused by the generation of strongly localized surface plasmon resonances. Utilizing the significant third-order nonlinear conductivity of graphene, it becomes possible to achieve high THG conversion efficiency even at low pump intensities. The research results indicate that, at low incident intensity of 10 kW/cm2, the third harmonic wave conversion efficiency can reach approximately 2.8 %. We also thoroughly investigate the impact of meta-grating structural parameters, graphene Fermi level, incident angle, and pump light intensity on THG operation characteristics. Our study findings provide an effective approach for greatly boosting the THG conversion efficiency in the terahertz frequency bands, opening new avenues in the development of novel compact frequency converters and modulators that are emerging in terahertz chip integration and nonlinear devices.

2D material platform for overcoming the amplitude–phase tradeoff in ring resonators

Compact and high-speed electro-optic phase modulators play a vital role in various large-scale applications including optical computing, quantum and neural networks, and optical communication links. Conventional electro-refractive phase modulators such as silicon (Si), III-V and graphene on Si suffer from a fundamental tradeoff between device length and optical loss that limits their scaling capabilities. High-finesse ring resonators have been traditionally used as compact intensity modulators, but their use for phase modulation has been limited due to the high insertion loss associated with the phase shift. Here, we show that high-finesse resonators can achieve a strong phase shift with low insertion loss by simultaneous modulation of the real and imaginary parts of the refractive index, to the same extent, i.e., ΔnΔk∼1. To implement this strategy, we demonstrate an active hybrid platform that combines a low-loss SiN ring resonator with 2D materials such as graphene and transition metal dichalcogenide [tungsten disulphide (WSe2)], which induces a strong change in the imaginary and real parts of the index. Our platform consisting of a 25 µm long Gr-Al2O3-WSe2capacitor embedded on a SiN ring of 50 µm radius (∼8% ring coverage) achieves a continuous phase shift of (0.46±0.05)πradians with an insertion loss (IL) of 3.18±0.20 dB and a transmission modulation (ΔTRing) of 1.72±0.15dB at a probe wavelength (λp) of 1646.18 nm. We find that our Gr-Al2O3-WSe2capacitor exhibits a phase modulation efficiency (Vπ2⋅L) of 0.530±0.016V⋅cm and can support an electro-optic bandwidth of 14.9±0.1GHz. We further show that our platform can achieve a phase shift ofπradians with an IL of 5 dB and a minimum ΔTof 0.046 dB. We demonstrate the broadband nature of the binary phase response, by measuring a phase shift of (1.00±0.10)πradians, with an IL of 5.20±0.31dB and a minimal ΔTRingof 0.015±0.006dB for resonances spanning from 1564 to 1650 nm. This SiN–2D hybrid platform provides the design for compact and high-speed reconfigurable circuits with graphene and transition metal dichalcogenide (TMD) monolayers that can enable large-scale photonic systems.

Photonic generation and transmission for an X-band dual-chirp waveform with frequency multiplication and power-fading compensation.

The generation of an X-band dual-chirp waveform, which is capable of pulse compression, plays an important role in radar, electric warfare, and satellite communication systems. With the development of applications such as multi-static radar, transmission over long distances has attracted considerable attention. In this paper, a photonic system for X-band dual-chirp waveform generation and transmission based on frequency multiplication and power-fading compensation is put forward and experimentally carried out. Based on a compact dual-parallel Mach-Zehnder modulator (DPMZM), the dual-chirp waveforms of 8.6-9.6GHz and 9.6-10.6GHz are generated by an RF carrier of 4.8GHz and transmitted through a 40km single-mode fiber (SMF) spool. The dispersion-induced power fading of the chirp waveform is compensated for by about 13dB. The full width at half maximum (FWHM) and the peak-to-sidelobe ratio (PSR) of the compressed pulses are 1ns and 11.5dB, respectively. Moreover, the compensation of power fading in the entire X-band is verified to demonstrate the applicability of our system. By flexibly adjusting the bias voltage of the built-in phase shifter, the system can be applied in more scenarios.

Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)

Direct bandgap group IV materials could provide intimate integration of lasers, amplifiers, and compact modulators within complementary metal–oxide–semiconductor for smaller, active silicon photonics. Dilute germanium carbides (GeC) with ∼1 at. % C offer a direct bandgap and strong optical emission, but energetic carbon sources such as plasmas and e-beam evaporation produce defective materials. In this work, we used CBr4 as a low-damage source of carbon in molecular beam epitaxy of tin-free GeC, with smooth surfaces and narrow x-ray diffraction peaks. Raman spectroscopy showed substitutional incorporation of C and no detectable sp2 bonding from amorphous or graphitic carbon, even without surfactants. Photoluminescence shows strong emission compared with Ge.

Compact plasmon modulator based on the spatial control of carrier density in indium tin oxide.

To keep pace with the demands of semiconductor integration technology, a semiconductor device should offer a small footprint. Here, we demonstrate a compact electro-optic modulator by controlling the spatial distribution of carrier density in indium tin oxide (ITO). The proposed structure is mainly composed of a symmetrical metal electrode layer, calcium fluoride dielectric layer, and an ITO propagating layer. The carrier density on the surface of the ITO exhibits a periodical distribution when the voltage is applied on the electrode, which greatly enhances the interaction between the surface plasmon polaritons (SPPs) and the ITO. This structure can not only effectively improve the modulation depth of the modulator, but also can further reduce the device size. The numerical results indicate that when the length, width, and height of the device are 14µm, 5µm, and 8µm, respectively, the modulation depth can reach 37.1dB at a wavelength of 3.66µm. The structure can realize a broadband modulation in theory only if we select a different period of the electrode corresponding to the propagating wavelength of SPPs because the modulator is based on the scattering effect principle. This structure could potentially have high applicability for optoelectronic integration, optical communications, and optical sensors in the future.

Slow-light silicon modulator with 110-GHz bandwidth.

Silicon modulators are key components to support the dense integration of electro-optic functional elements for various applications. Despite numerous advances in promoting the modulation speed, a bandwidth ceiling emerges in practices and becomes an obstacle toward Tbps-level throughput on a single chip. Here, we demonstrate a compact pure silicon modulator that shatters present bandwidth ceiling to 110 gigahertz. The proposed modulator is built on a cascade corrugated waveguide architecture, which gives rise to a slow-light effect. By comprehensively balancing a series of merits, the modulators can benefit from the slow light for better efficiency and compact size while remaining sufficiently high bandwidth. Consequently, we realize a 110-gigahertz modulator with 124-micrometer length, enabling 112 gigabits per second on-off keying operation. Our work proves that silicon modulators with 110 gigahertz are feasible, thus shedding light on its potentials in ultrahigh bandwidth applications such as optical interconnection and photonic machine learning.

Compact and Efficient Thin‐Film Lithium Niobate Modulators

Thin‐film lithium niobate (TFLN) modulators have garnered significant attention in the field of integrated photonics due to their ability to manipulate light. Numerous TFLN modulators have been demonstrated over the past few years, with speed records consistently being broken. However, due to the low refractive index contrast and anisotropic properties of TFLN, modulators based on this material feature larger device sizes and lower efficiency. A more compact and efficient modulator is important, as it is required for future dense integration and low power consumption applications. There have been some reports on how to reduce device size, and research is ongoing. A comprehensive summary can help individuals understand the current state of research and existing problems. In this review, we provide an overview of recent advancements in TFLN modulator technology, focusing on compactness and efficiency. Herein, various types of modulators, such as the Mach–Zehnder interferometer, Michelson interferometer, resonator cavity, and Z‐cut type modulators, are discussed. Moreover, potential improvement strategies and applications for compact and efficient TFLN modulators in advanced photonic systems are explored. In conclusion, in this review, the recent achievements in compact and efficient TFLN modulators are summarized and their significance in various optoelectronic applications is emphasized.

Phase-Only Compact Radiation-Type Metasurfaces for Customized Far-Field Manipulation

Microwave metasurfaces are often difficult to apply in integrated systems due to the required spatial feeds. Herein, a compact circularly polarized (CP) radiation-type metasurface (RTM) realizing precise far-field radiation pattern manipulation is proposed. Two e-shaped elements are superimposed to constitute the meta-atoms based on the geometric phase, exhibiting a full 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\pi $</tex-math> </inline-formula> transmission phase coverage and high transmittance. Moreover, a far-field reconstruction method based on phase mask optimization is proposed to realize highly customized far-field pattern control. Several proof-of-concept RTM prototypes, realizing energy-tailorable multibeams, wide angle deflection, and customized beam shaping, are designed and fabricated. The simulation and the experimental results validate the proposed method and the RTM structures, which may offer compact wave modulation components capable of highly precise and customized far-field beamforming.