This study investigated Cu-doped a-C films prepared under a substrate bias gradually reducing from 120 to 60 V and different Cu target currents of 0, 0.15, 0.2, 0.3, 0.5 A, respectively, using closed field unbalanced magnetron sputtering physical vapour deposition technique. While the Cu-doped a-C film at the lowest Cu target current of 0.15 A (A0.15) remained an amorphous microstructure, Cu nanoprecipitates occurred at Cu target currents of 0.2–0.5 A. All the Cu-doped a-C films prepared exhibited good combination of corrosion resistance to a corrosive chemical mixture of 0.5 M H2SO4 + 5 ppm HF (as suggested by the corrosion current densities) and interfacial electric conductivity (as demonstrated by the interfacial contact resistance, ICR). Among all coatings, A0.15 showed the best corrosion resistance and interfacial electric conductivity, which is attributable to the precipitate-free Cu-doped amorphous microstructure. The measured current density of A0.15 was 1.95 × 10−7 A/cm2 at 0.6 V (vs. SCE) during potentiodynamic polarization, which was lower than that of the Cu-free a-C film at 7.34 × 10−7 A/cm2. The ICR value of A0.15 was 4.40 mΩcm2 at an assembly pressure of 1.4 MPa, which is about one third of the Cu-free a-C film. This study demonstrates a new deposition strategy combining Cu-doping and the control of substrate bias to improve the corrosion resistance and interfacial electric conductivity of a-C films for PEMFC.
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