Combination Of Electron Beam Lithography Research Articles

Fabrication of free-standing single-crystal silicon wires

A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 μm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabrictaed in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.

Fabrication of first-order gratings for 1.5 μm DFB lasers by high-voltage electron-beam lithography

First-order gratings for 1.5 μm-wavelength distributed-feedback lasers have been fabricated reproducibly in InGaAsP by a combination of electron-beam lithography and wet-chemical etching. A high-voltage electron beam (60 kV) of small diameter (50 nm) is employed in the exposure step.

6148. A combined electron and ion beam lithography system

6148. A combined electron and ion beam lithography system

A new cross sectional thinning technique for transmission electron microscopy

A new method for obtaining transmission electron microscope (TEM) cross sections is presented which combines electron beam lithography, optical lithography, and reactive ion etching. The technique uses an electron beam to position and define a line pattern in a desired area. With the aid of a highly selective mask the pattern is transferred into the substrate with reactive ion etching. Uniform features 0.1 μm thick, 0.4 μm high, and 10 μm long have been fabricated for cross sectional viewing in TEM.

A combined electron and ion beam lithography system

In scanning beam microfabrication processes, including resist exposure, direct maskless ion implantation, and micromachining, ions and electrons have complementary roles. It is advantageous to have, within a single scanning beam machine, finely focused and precisely coregistered beams of both ions and electrons. The requirement for the ion beam and the electron beam to have a common axis and to be focused at the target by a high resolution lens with short working distance can be met both by solely electrostatic and by combined magnetic and electrostatic lenses. Such lenses, and complete probe‐forming systems incorporating them, are considered.