Columnar Electrodes Research Articles

Adsorption characteristics of electrodes containing nanostructured carbon of different morphology

The effect of camphor adsorption on the differential capacitance of electrodes of nanostructured carbon of different morphology (single-walled carbon nanotubes, filiform carbon, and columnar structures) in aqueous electrolyte solutions and also on the electrochemical reactions in these systems is studied. It is shown that irrespective of the ac frequency, the differential capacitance of the nanopaper and columnar electrodes increases 3–5-fold throughout the studied potential range. This experimental fact is explained by the substantial increase in the electrode surface accessible for electrolyte, which is a manifestation of the Rehbinder effect in electrochemistry. The revealed different kinds of effects of camphor adsorption layers formed at the nanostructured carbon/electrolyte interface on the electron transfer processes are as follows: partial inhibition of both the electron injection and the K3[Fe(CN)6] reduction; complete suppression of the reduction of sodium nitrate and nitrite; the absence of effects on the OH radical reduction and solvated electron oxidation.

Fabrication and simulation of novel ultra-thin 3D silicon detectors

A novel ultra-thin silicon detector called U3DTHIN has been designed, simulated and fabricated for applications that range from neutral particle analyzers (NPA) used in corpuscular diagnostics of High-Temperature Plasma to very low X-ray spectroscopy. The main purpose of this detector is to provide a state-of-the-art solution for the upgradation of the current detector system of the NPAs at JET and also to pave the road for the future detection systems of the ITER experimental reactor. Currently the NPAs use a very thin scintillator–photomultiplier tube, and their main drawbacks are poor energy resolution, intrinsic scintillator nonlinearity and relative low count rate capability and finally poor signal-to-background discrimination for the low energy channels. This new U3DTHIN detector is based on columnar electrodes passing through a very thin sensitive substrate, which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for the neutron and gamma background.

Double-Sided, Double-Type-Column 3-D Detectors: Design, Fabrication, and Technology Evaluation

We report on the latest results from the development of 3-D silicon radiation detectors at Fondazione Bruno Kessler of Trento (FBK), Italy (formerly ITC-IRST). Building on the results obtained from previous devices (3-D Single-Type-Column), a new detector concept has been defined, namely 3-D-DDTC (Double-sided Double-Type Column), which involves columnar electrodes of both doping types, etched from alternate wafer sides, stopping a short distance (d) from the opposite surface. Simulations prove that, if d is kept small with respect to the wafer thickness, this approach can yield charge collection properties comparable to those of standard 3-D detectors, with the advantage of a simpler fabrication process. Two wafer layouts have been designed with reference to this technology, and two fabrication runs have been performed. Technological and design aspects are reported in this paper, along with simulation results and initial results from the characterization of detectors and test structures belonging to the first 3-D-DDTC batch.

3D stc sensors with different strip isolation schemes and substrate materials

For the innermost layers of the foreseen upgrade to the ATLAS tracker, charge trapping will be the main limitation in terms of the sensor lifetime. A possible solution to the degradation of the charge collection efficiency (CCE) could be the use of 3D detectors. In 3D detectors the electrodes are processed not just at the surface of the sensor, but they extend partly or completely through the silicon bulk. The distance between the columnar electrodes of 3D detectors can be adjusted to the expected fluence range. We designed and constructed prototype modules comprising ATLAS SCT front-end electronics and 3D single-type column (stc) p-type strip detectors with different strip isolation techniques and different substrate materials. With a strip length of 18.4 mm these sensors could be a radiation hard option for the innermost short strip region of the inner detector in the upgraded ATLAS experiment. We characterised these 3D stc p-type sensors in terms of their noise behaviour and hence their effective capacitance as a function of applied bias voltage at a read-out speed of 40 MHz which is also anticipated for sLHC. Employing an IR laser and automated x– y stages with micrometer resolution we characterised the sensors regarding the CCE in dependence of the bias voltage and the IR laser position relative to the sensors before irradiation.

3D detectors at ITC-irst: first irradiation studies

In the past two years, we have developed 3D detector technologies at ITC-irst (Trento, Italy). We have proposed a new 3D architecture, having columnar electrodes of one doping type only, allowing for a simplified fabrication process. In this paper, we report on preliminary results from the electrical characterization of devices irradiated with neutrons, showing that low depletion voltage values can be achieved even after very large fluences.

Electro-optical measurements of 3D-stc detectors fabricated at ITC-irst

In the past two years 3D silicon radiation detectors have been developed at ITC-irst (Trento, Italy). As a first step toward full 3D devices, simplified structures featuring columnar electrodes of one doping type only were fabricated. This paper reports the electro-optical characterization of 3D test diodes made with this approach. Experimental results and TCAD simulations provide good insight into the charge collection mechanism and response speed limitation of these structures.

Simulation and test of 3D silicon radiation detectors

The work presented here is the result of the collaborative effort between the University of Glasgow, ITC-IRST (Trento) and IMB-CNM (Barcelona) in the framework of the CERN-RD50 Collaboration to produce 3D silicon radiation detectors and study their performance. This paper reports on two sets of 3D devices. IRST and CNM have fabricated a set of single-type column 3D detectors, which have columnar electrodes of the same doping type and an ohmic contact located at the backplane. Simulations of the device behaviour and electrical test results are presented. In particular, current–voltage, capacitance–voltage and charge collection efficiency measurements are reported. Other types of structures called double-sided 3D detectors are currently being fabricated at CNM. In these detectors the sets of n and p columns are made on opposite sides of the device. Electrical and technological simulations and first processing results are presented.

Fabrication of 3D detectors with columnar electrodes of the same doping type

Recently, we presented a new 3D detector architecture aimed at simplifying the manufacturing process, making it more suitable for high-volume production. In particular, the proposed device features electrodes of one doping type only, e.g., n + columns in a p-type substrate. In this paper we report on the fabrication at ITC-irst of the first batch of prototypes. The main issues related to the fabrication process along with preliminary results from the electrical characterization of different detectors and test structures are discussed.

Characterization of 3D-stc detectors fabricated at ITC-irst

3D silicon radiation detectors offer many advantages over planar detectors, including improved radiation tolerance and faster charge collection time. We proposed a new 3D architecture (referred to as 3D-stc), which features columnar electrodes of one doping type only, thus, allowing a considerable simplification of the manufacturing process. In this paper, we report selected results from the electrical characterization of 3D diodes fabricated with this technology, along with preliminary results on the charge collection efficiency of these devices.

Development of 3D detectors featuring columnar electrodes of the same doping type

We present a new 3D detector architecture aimed at simplifying the manufacturing process making it more suitable for high volume production. In particular, the proposed device features electrodes of one doping type only, e.g., n + columns in a p-type substrate. We report on TCAD simulation results providing deep insight into the static and dynamic behavior of this detector, highlighting its advantages and potential drawbacks. The fabrication process we intend to use is also described along with results from the morphological characterization of the most critical technological steps.

Modelling the electric potential distribution in the dark in nanoporous semiconductor electrodes

This study concerns the electric potential distribution in the dark in nanocrystalline porous semiconductor electrodes, in full depletion conditions. Since band bending in a single colloidal particle is small, the idea is to develop a model that accounts for the total potential drop resulting from the equilibration between the Fermi level and the redox potential in the solution. As preliminary steps, the band bending and potential distribution in a planar electrode and also in a colloidal semiconductor particle are reviewed. In order to overcome the limitations of results based on these geometries, a model based on a columnar shape is developed. The Poisson equation is solved in the columnar electrode, with careful consideration of the boundary conditions. A large potential drop is shown to take place at the back contact. To complete the study, the effect of the depletion zone in the transparent conducting oxide is analysed. Simple expressions are derived that permit evaluation of how the total potential drop is distributed between the electrode and the substrate. From this, the strength and spatial range of the electric field in the electrode can be estimated.