An electron microscope was used to investigate the effect of thin sublayers of metals on the stability of the amorphous phase of Sb layers. Two types of the bilayer system, metal on Sb (M/Sb) and Sb on metal (Sb/M) were prepared on collodion films by sequential deposition in a vacuum of 10 -5 Pa. For M/Sb (M = Ti, Cr, Fe, Co, Ni or Ni-Fe(Ni 42Fe 58)) the a-Sb layer of thickness d Sb = 8−9 nm was predeposited at 30°C. Its temperature T Sb was held at 30°C during the overdeposition of a layer of Ti, Cr or Co and ranged from 30 to 100°C during the deposition of a layer of Fe, Ni or Ni-Fe. When T Sb was 30°C deposits of Ni stimulated the Sb layer to crystallize, forming compounds with Sb at d Ni≥1.1 nm but deposits of other metals yielded no effect. When T Sb was 60°C deposits of Fe, Ni-Fe or Ni contributed to the crystallization of the Sb layer at d Fe≥1.2-1.8 nm, d Ni-Fe≥1.1 nm or d Ni≥0.5 nm, forming compounds with Sb. When T Sb was ≥80°C the Sb layer was self-crystallized by an anneal of several minutes. For Sb/M (M = Ti, Fe, Ni, Ni-Fe, Cu, Sn, Pb or Bi) the crystallization thickness d c of the Sb layer was examined at 30°C, d c decreased with an increase in the thickness d m of the M layer. For example, d c decreased from 9 to 3.9 nm as d Ni increased from 0.1 to 0.2 nm, and from 15.6 to 13 nm as d Ti increased from 0.2 to 1.9 nm. Generally, a greater decrease in d c occurred in the Sb layer deposited onto the M layer which caused the crystallization of the Sb layer in the metal on Sb system.