A micromachined silicon electrode array intended for use as a cochlear implant is reported. The flexible array is formed using a boron etch-stop for substrate definition and contains 22 IrO stimulating sites implemented on 750 μm centers. The insertable portion of the array is 25 mm long and 320–640 μm in width; the back end of the device provides interconnects to implanted current-generation circuitry. Device functionality has been verified through in vivo experiments and the associated evoked auditory brainstem responses are reported; thresholds for monopolar stimulation are less than 80 μA. The integration of polysilicon strain gauges on the array will permit monitoring of implant curvature within the cochlea, providing a resolution in substrate position of 60 μm across the 500 μm diameter cochlear canal.