Selective removal of silicon nitride (Si3N4) layers from multilayer Si3N4/silicon dioxide (SiO2) stack structures is essential for fabricating 3-dimensional (3D) NAND flash memory devices. Although phosphoric acid (H3PO4) selectively etches Si3N4 layers to a certain degree, the tip thicknesses of the SiO2 layers increase owing to oxide regrowth, and the SiO2-layered trenches become clogged. In particular, the oxide regrowth phenomenon worsens as it progresses to the bottom of the structure. In this study, carbon dioxide (CO2) gas was generated by adding acidic reducing agents to H3PO4 to suppress the oxide regrowth in the stack structure. CO2 gas creates a turbulent flow in the slits and SiO2/Si3N4/SiO2 trenches, promoting the diffusion of Si3N4 etch byproducts from the cul-de-sac of the SiO2/Si3N4/SiO2 trench structures to the outside of the stack structure. The addition of oxalic acid to H3PO4 generated a high concentration of CO2 gas and selectively etched Si3N4 layers without oxide regrowth in the stack structure. Finally, the selective etching of Si3N4 layers, which is faster and more uniform than that in pure 85 wt.% H3PO4, was performed without oxide regrowth in the entire 128-layer Si3N4/SiO2 multi-stack structure.