In this study, the oxidized copper foil and the original copper foil were used as substrates to fabricate graphene samples by low pressure chemical vapor deposition (LPCVD) in a restricted growth space. The results demonstrated that in the restricted growth chamber, the oxidized layer on the oxidized copper foil inhabited graphene nucleation in the early nucleation stage, but with the oxidized layer heavily decomposing, decomposed oxygen would accelerate graphene growth. Because the decomposition rate of the oxidized layer would increase with growth temperature increasing, the acceleration effect of oxygen atoms on graphene growth becomes more obvious at higher growth temperature. So millimeter-scale graphene single crystals could be easily fabricated at 1060 °C on the oxidized copper foils in the restricted growth chamber. With the help of density functional theory (DFT) calculations, the influence mechanism of oxygen atoms on graphene nucleation and growth on copper substrate was investigated. The results showed that the oxygen atoms could not only react with CH fragments to form CO fragments to consume the number of carbon monomers, but also accelerate the diffusion and clustering of CH fragments.