Co-doping Ratio Research Articles

Lithium and sodium ion Co-doping: A promising strategy for enhancing the performance of Cs2AgBiBr6 perovskite solar cells

The non-toxic perovskite Cs2AgBiBr6 presents impressive photovoltaic performance and stability, offering a lead halide-free alternative for solar cells. Overcoming challenges related to thin-film preparation and its intrinsic indirect bandgap, we leverage the synergistic effect of co-doping with lithium ions (Li+) and sodium ions (Na+) to enhance perovskite solar cells (PSCs). Improved carrier transport in Cs2AgBiBr6 films, facilitated by the diffusion of Li+, significantly enhances the photovoltaic conversion efficiency (PCE). Systematic exploration of various doping ratios identifies the optimal co-doping ratio, resulting in a remarkable PCE increase to 5.02 % and a short-circuit current of 6.56 mA cm−2. Ion doping not only tunes the material's band gap but also adjusts the energy level arrangement within the device layers. Impressively, the PCE of co-doped PSCs experiences only a 16.8 % decline after 60 days in an unencapsulated environment, underscoring its outstanding stability. This work provides a rational design for double-ion co-doping experiments, enhancing PSC performance and offering valuable insights for the future development of PSCs.

Solution-processed Tb: Zr co-doped In2O3 thin film transistor and its dual effect on improving photostability

In this paper, Tb: Zr co-doped In2O3 TFTs were fabricated using an aqueous route. The dual effect of Tb: Zr co-doping on improving photostability was addressed. At a 5 mol% co-doping concentration, the ΔVth under NBIS first decreased and then increased as Tb: Zr ratio increased. The optimized co-doped sample (1: 2) showed a ΔVth of −3.22 V, compared to the undoped sample of −9.5 V and the single-doped samples (1: 0 and 0: 1) of −4.4 V and −4.15 V respectively. The defect state was evaluated using μ-PCD. The peak value and τ2 first decreased and then increased with an increase in Zr ratio, and reached their minimum values when the Tb: Zr co-doping ratio was 2: 1 and 1: 2, respectively. This suggested that co-doping can introduce more deep level states for the rapid recombination of photogenerated carriers and reduce shallow level states, leading to superior photostability of the co-doped devices. Further characterization by UV-Vis and XPS indicated that the increase in band gap and the decrease in oxygen vacancy were also contributing factors to improved device stability. These results highlight the great potential of solution-processed Tb: Zr co-doped In2O3 TFT for applications in low-cost and high-stability electronics.

Enhanced downconversion luminescence of NaLuF4:Yb3+,Er3+ micrometer hexagonal prismatic crystals under 980 nm excitation

NaLuF4:Yb3+,Er3+ micrometer prismatic crystals are potential materials for the preparation of optical waveguide devices. However, structural defects and OH– groups are generated inside and on their surfaces during growth processes. The structural defects and OH– groups lead to a large depletion of excitation energy and severely quench the downconversion luminescence of Er3+. In addition, the Yb3+/Er3+ co-doping ratio significantly affects the downconversion luminescence of the microcrystals, which in turn affects the performance of the optical waveguide amplifiers based on the microcrystals. By adjusting the co-doping ratio of Yb3+ and Er3+ in the microcrystals and removing the defects in the crystals, their downconversion luminescence performance was significantly improved. The results showed that the downconversion luminescence under the excitation from a 980 nm laser reached the maximum value when the doping ratio of Yb3+ and Er3+ was 20:1.5. In addition, the OH– groups and structural defects in the micrometer crystals were significantly eliminated by ion-exchange and high-temperature annealing treatments, and the crystalline quality was significantly improved. After ion-exchange and high-temperature annealing treatments, the downconversion luminescence enhancement of NaLuF4:Yb3+,Er3+ microcrystals was 2.5 times that of the untreated samples.

Ca-Co co-doped strontium ferrite ceramic with tunable magnetic properties for enhanced microwave absorbing application

M-type strontium ferrite (SrFe12O19), due to its excellent thermal stability, corrosion resistance, resistivity, curie temperature, and magnetic anisotropy, should be an ideal candidate for designing microwave absorbers, and the only obstacle is its unsatisfied magnetic properties. Herein, we proposed a co-doping strategy to tune the magnetic properties of SrFe12O19, namely Ca-Co co-substituted SrFe12O19 (CaxSr1-xFe12-xCoxO19; x ≤ 0.4), which is fabricated via a solid phase sintering process. By changing the co-doping ratio (x = 0.1, 0.2, 0.3, and 0.4), the magnetic properties were well regulated, including saturation magnetization (41.70∼57.92 emu⋅g − 1), coercivity (156.507∼291.747 Oe), and magneto-anisotropy constant (1.476∼2.409×106 erg/cm3). As initially expected, the CaxSr1-xFe12-xCoxO19 (x = 0.) ceramic show good microwave absorbing performance, for example, an optimal reflection loss of −21.3 dB and an effective absorbing bandwidth of 4.8 GHz at a sample thickness of 2 mm was achieved. Such results demonstrate the validity of the co-doping strategy in designing microwave absorbers with high performance based on M-type ferrite.

Versatile polydopamine-mediated growth of N and C co-doped hollow porous TiO2 spheres with oxygen vacancies for visible-light-driven oxidation of acetaldehyde

Developing visible-light-responsive TiO2-based photocatalysts provides a promising avenue for addressing VOCs pollution. Herein, polydopamine (PDA) template pyrolysis waste was in-situ up-cycled for simultaneous growth of N and C co-doped hollow porous TiO2 microreactors (H-NT-0.2) in air. The resulting H-NT-0.2 with a highly intact hollow structure, thin spherical shell (∼ 13 nm) and high porosity possesses the highest N and C co-doping ratio and largest oxygen vacancies (OVs) amount, leading to the highest concentration of reactive oxygen species (ROS) among all H-NT-x. A crucial role of OVs in enhancing H2O adsorption for the generation of hydroxyl radicals (⋅OH) has been revealed by DFT calculations. As a result, H-NT-0.2 shows the highest photocatalytic oxidation (PCO) efficiency of flowing acetaldehyde gas (90%) under visible light irradiation, which exceeds 3.5 times of commercial TiO2 (P25)), and outperforms most of the reported photocatalysts. The growth mechanism, as well as the photocatalytic reaction pathways, were analyzed based on TG-MS and in-situ DRIFTS results, respectively. This work provides an economical, green and feasible strategy to develop advanced visible-light-responsive photocatalysts for aldehydes VOCs abatement in practical applications.

Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths.

Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength around 1550 nm. Here, we present silicon LEDs based on the electroluminescence of Er:O complexes in Si. Such sources are fabricated with a fully-compatible CMOS process on a 220 nm-thick silicon-on-insulator (SOI) wafer, the common standard in silicon photonics. The implantation depth is tuned to match the center of the silicon layer. The erbium and oxygen co-doping ratio is tuned to optimize the electroluminescence signal. We fabricate a batch of Er:O diodes with surface areas ranging from 1 µm × 1 µm to 50 µm × 50 µm emitting 1550 nm photons at room temperature. We demonstrate emission rates around 5 × 106 photons/s for a 1 µm × 1 µm device at room temperature using superconducting nanowire detectors cooled at 0.8 K. The demonstration of Er:O diodes integrated in the 220 nm SOI platform paves the way towards the creation of integrated silicon photon sources suitable for arbitrary-statistic-tolerant QKD protocols.

Hyperdoping-regulated room-temperature NO2 gas sensing performances of black silicon based on lateral photovoltaic effect

Black silicon co-hyperdoped with sulfur and nitrogen in different ratios is prepared by femtosecond laser-assisted chemical etching in the mixed atmosphere of SF6 and NF3 with varying gas pressure ratios. Their room-temperature NO2 gas sensing capability is studied systematically, in which the photocurrent as a readout signal is generated by the lateral photovoltaic effect of black silicon under an asymmetrical light illumination. These co-hyperdoped black silicon exhibits high response, fast response/recovery, ultrawide detection range from 29 ppb to 2000 ppm, excellent selectivity and acceptable long-term durability over 3 months. Moreover, NO2 gas sensing performances are effectively tuned or optimized by deliberately changing the co-doping ratio of sulfur and nitrogen, as different photovoltaic characteristics are induced by changes in morphology and structural defects resulting from different hyperdoping. Specifically, ultra-high relative gas response (∼3955%@20 ppm NO2) and superior selectivity are obtained at the SF6/NF3 pressure ratio of 56/14, while faster response/recovery time (17 s/ 47 s @ 20 ppm NO2) and response photocurrent with a weaker disturbance by humidity are given by the samples with SF6/NF3 of 7/63 and 63/7, respectively. Therefore, such black silicon material has good potential to meet different application needs.

Tuning of work function of ZnO by doping and co-doping: An investigation using X-ray photoelectron spectroscopy

The shift in the work function of the ZnO thin film upon varying codoping ratio has been investigated by X-ray photoelectron spectroscopy. A notable shift of 0.2 eV in the work function was achieved in the films when the Al:In doping ratio was changed from 0:10 to 10:0. The elemental composition of the dopants obtained from XPS analysis showed the presence of more amount of In dopant than Al in codoped ZnO films. In this way a clear understanding of the variation in electrical properties on dopant ratio is obtained. A decrease in work function was also observed with the increase in free carrier concentration when the codopant ratio is changed. The effects of Burstein moss, band narrowing, and band renormalization observed in the bandgap were explained by an upward and downward shift of valence band maxima of the corresponding thin films. The controllable work function of the codoped ZnO films by varying the doping ratio offers excellent potential advantages in optoelectronic devices.

Enhanced subband light emission from Si quantum dots/SiO2 multilayers via phosphorus and boron co-doping.

Seeking light sources from Si-based materials with an emission wavelength meeting the requirements of optical telecommunication is a challenge nowadays. It was found that the subband emission centered near 1200 nm can be achieved in phosphorus-doped Si quantum dots/SiO2 multilayers. In this work, we propose the phosphorus/boron co-doping in Si quantum dots/SiO2 multilayers to enhance the subband light emission. By increasing the B co-doping ratio, the emission intensity is first increased and then decreased, while the strongest integrated emission intensity is almost two orders of magnitude stronger than that of P solely-doped sample. The enhanced subband light emission in co-doped samples can be attributed to the passivation of surface dangling bonds by B dopants. At high B co-doping ratios, the samples transfer to p-type and the subband light emission from phosphorus-related deep level is suppressed but the emission centered around 1400 nm is appeared.

Skin depth, optical density, electron-phonon interaction, steepness parameter, band tail width, carriers transitions and dissipation factors in Cu-Co bilayer films

This work aims to study Cu films, and Cu-Co bilayer deposited using DC Magnetron sputtering system on silicon substrates. It can be seen that as the thicknesses of films were increased, the grain size becomes larger which was in good agreement with the presented SEM and AFM images. The high-intensity peak for FCC materials was generally (111) reflection, which is observed in the films when the Co-doping ratio was increased, the (111) peak became stronger. The PL spectra have shown that the Cu films with 70 nm Cu have a maximum value of the oxygen defect density however Cu-Co bilayer with 70 nm Co have a minimum value of the oxygen defect density. We found that the Cu-Co bilayer with 70 nm Co was more disordered and the disordering energy EU in these bilayers was in a bout of 0.681 eV. The Cu-Co bilayers with 40 nm Co have maximum values of the energy gap about of 3.75 eV. The Cu-Co bilayers with 40 nm Co have maximum values of the electron-phonon interaction Ee-ph in about 0.0180 eV. The maximum value of the steepness parameter has occurred in Cu films with 70 nm Co and was 51.55 eV. It can be seen that the surface and volume dissipation factors in the Cu-Co bilayers with 60 nm Co have the maximum value. The maximum value of skin depth of films has occurred in Cu films with 60 nm Cu and it has a peak maximum about of 280 nm. The Cu-Co bilayers with 70 nm have maximum values of the average crystallite size about of 29.1 nm. Also, it is found that the Cu-Co bilayers with 70 nm have minimum values of micro strain ε. It can be observed that the relation between the optical band gap energy Eg and the Urbach energy Eu by Eg = 0.71 ‒ 0.5Eu were studied.

Realization of high-quality white light emission in single-phased α-Sr2P2O7: Dy3+, Tm3+ phosphor

A single-phased white phosphor of α-Sr2P2O7: Dy3+, Tm3+ with low correlated color temperature (CCT) was synthesized by high temperature solid phase method. Our experimental results show that by co-doping Tm3+ and Dy3+ ions in the α-Sr2P2O7 matrix, the blue characteristic emission peak of Tm3+ ions can be used to effectively enhance the blue emission of the phosphor, and finally achieve high-quality white light emission. Moreover, since the emission spectrum of Tm3+ overlaps with the excitation spectrum of Dy3+ in the wavelength band from 445 to 465 nm, Tm3+ can transfer energy to Dy3+ ions, so the emission spectrum of Dy3+ can be further regulated and the emission intensity can be improved. Consequently, by optimizing the co-doping ratio of Tm3+ and Dy3+ ions, we achieved the optimal white light emission in α-Sr2P2O7: 0.01Tm3+, 0.01Dy3+ samples. Under the excitation of 351 nm ultraviolet light, the color coordinates of α-Sr2P2O7: 0.01Tm3+, 0.01Dy3+ emitting white light are (0.3292, 0.3521), and the CCT value is 5500 K, which are almost consistent with the color coordinates of standard white light and the color temperature of daylight. Therefore, α-Sr2P2O7: Dy3+, Tm3+ is a single-phased white phosphor material with great application potential for UV excitation.

Mechanism of nitrogen-fluoride co-doped TiO2/bentonite composites removing tetracycline: A study in the co-doping ratio

N-doped and N-F co-doped TiO2/bentonite composites were synthesized via the gel-sol method. The morphology, structure and surface charge of the composite before and after adsorption were used to determine the effect N/F doping ratio on TC removal. The results showed that, compared with undoped samples, the TC adsorption on N doped composites was reduced by 24.44% on average. N-F co-doping significantly increased the TC adsorption when the Ti-N-F molar ratio was 1:1: 0.01, reaching a maximum TC adsorption of 64.00 mmol·kg<sup>-1</sup>. The coverage of the N doped TiO2 increases as the N doping ratio increases; the specific surface area increased by 2.03 % on average, but the number of surface negative charges decreased by 36.24 % on average. FT-IR results confirmed that N doping reduced the number of -OH groups on the N-doped composites. Additionally, fluorination of N-F co-doped TiO2 and bentonite surfaces inhibits hydrogen bonding and π-π interactions between the TC and the composites. As the N doping ratio increased, the coverage of N-F co-doped TiO2 on the composite surface increased, resulting in the TC adsorption decrease with the increases N doping ratio.

Effect of Sc3+/V5+ Co-Doping on Photocatalytic Activity of TiO2

Series of Sc/V co-doped rutile TiO2 with different Sc/V ratio was synthesized. Samples were characterized by XRD, SEM, XPS, BET, EPR, diffuse reflectance spectroscopy and Kelvin probe methods. EPR spectroscopy reveals a simultaneous increase of V4+ and Ti3+ as vanadium content grows. At the same time, an increase of vanadium concentration in co-doped samples results in stronger absorption in visible light range. However, a photocatalytic activity dependence on the co-dopant ratio demonstrates “volcano” plot behavior with maximum at 75/25 Sc/V ratio, while the work function dependence on Sc/V ratio demonstrates a negative correlation with photocatalytic activity resulting in a minimal value of work function at the same optimal ratio of co-dopant content. The analysis of the experimental results infers that alteration of Sc/V co-doping ratio leads to redistribution between shallow traps, which are not effective in charge carrier recombination, and deep traps, which act as effective recombination centers, with maximal shallow traps concentration corresponding to the optimal Sc/V ratio equal to 75/25, yielding the lowest recombination efficiency and therefore, the highest photocatalytic activity. Redistribution of defect states induced by co-doping should be distinguished as a primary factor of alteration of photocatalytic activity in co-doped TiO2. Presented results demonstrate that photoactivity of co-doped titania cannot be considered as result of either independent action of dopants or their additive effect.

Effect of biaxial strain on the p-type of conductive properties of (S, Se, Te) and 2 N co-doped ZnO

Although the physical properties of ZnMxO1-x-yNy (M = S, Se, Te) p-type doping have been reported, the effects of biaxial strain on (S, Se, Te) and 2 N co-doped ZnO are rarely investigated by first-principles studies. Therefore, this study employs the first-principle plane wave ultra-soft pseudopotential method based on density functional theory to explore the formation energy and conductive properties of the doping system with a co-doping ratio of M and N in ZnO of M:N = 1:2 under the strain range of ‒5 % to 5 %. Under unstrained conditions, the M-N doping position is fixed and the other N is closer to M. The closer the N-N distance, the smaller the formation energy of the same doping system, and the higher the stability of the doping system. Regardless of the tensile or compressive strain, the formation energy of the doping system is higher than that of the unstrained doping system. The stability decreases relatively, but the formation energy is negative and the stability is still high. When the compressive strain is ‒5 %, the hole conductivity of the ZnSe0.0278O0.9166N0.0556 doping system is greater than that of the unstrained ZnSe0.0278O0.9166N0.0556. The vertical and horizontal comparisons show that the p-type effect and hole conductivity of ZnSe0.0278O0.9166N0.0556 are optimal when the compressive strain is ‒5 %. This study can be used as a guide for the design and preparation of new p-type ZnO conductive functional materials.

Synthesis and electrochemical properties of Co-doped $$\hbox {ZnMn}_{2}\hbox {O}_{4}$$ hollow nanospheres

Spinel structure Co-doped $$\hbox {ZnMn}_{{2}}\hbox {O}_{{4}}$$ nanocrystals were successfully synthesized by a hydrothermal method. The effects of Co-doping concentration on the structure and electrochemical properties of the samples were investigated. The experimental results manifest that all samples exhibit a single-phase with a tetragonal structure, and morphologies are regular hollow microspheres. Cyclic voltammetry curves for all samples are similar to a rectangular shape with symmetric nature and no obvious redox peak. Galvanostatic charge–discharge curves were triangular and symmetric. Impedance spectra revealed that $$\hbox {Zn}_{1-x}\hbox {Co}_{{x}}\hbox {Mn}_{{2}}\hbox {O}_{{4}}$$ possess low resistance. Better electrochemical properties of the $$\hbox {ZnMn}_{{2}}\hbox {O}_{{4}}$$ electrode could be obtained when the Co-doping ratio is 0.3. $$\hbox {Zn}_{0.7}\hbox {Co}_{0.3}\hbox {Mn}_{{2}}\hbox {O}_{{4}}$$ exhibits much higher specific capacitance ( $$306\hbox { F g}^{-1}$$ ) at a scan rate of $$5\hbox { mV s}^{-1}$$ , and shows excellent cycling stability and retains 98.2% of its initial capacitance after 1000 cycles. The enhanced capacitive performance in this work can be attributed to the incorporation of Co ions doped into the $$\hbox {ZnMn}_{{2}}\hbox {O}_{{4}}$$ host lattice.

Oxygen/phosphorus co-doped porous carbon from cicada slough as high-performance electrode material for supercapacitors

Synthesizing high-performance electrode materials plays a vital role in fabricating advanced supercapacitors. Heteroatom doping has been proved to be effective in enhancing the electrochemical properties of carbon-based electrodes. Herein, we report an O, P co-doped porous carbon (PC) originated from waste biomaterials, cicada sloughs. The PC possesses meso-/microporous structure with a large specific surface area (1945 m2·g−1) and a high O, P co-doping ratio of 18 wt.%. These superior factors together enable it to deliver high specific capacitance (295 F·g−1 in 6 M KOH and 291 F·g−1 in 1 M H2SO4), good cycling stability (100% capacitance retention after 10000 cycles in 1 M H2SO4) and rate performance. Therefore, from the respects of environment friendliness and cost effectivity, obtaining heteroatom doped carbons from the nature might be better compared to pyrolyzing heteroatom-containing chemicals.

Improvement of the Electroluminescence Performance of Exciplex‐Based OLEDs by Effective Utilization of Long‐Range Coupled Electron–Hole Pairs

AbstractAn effective method to utilize the radiation of long‐range coupled electron–hole pairs to improve the electroluminescence performance of exciplex‐based organic light‐emitting diodes (OLEDs) is realized by codoping an organic spacer into the bulk‐heterojunction exciplex emitter. The photoluminescence properties of the codoped films reveal that the fraction of delayed fluorescence will be clearly strengthened with an increasing codoping ratio, indicating that more triplet excitons can be utilized effectively, thus greatly enhancing the efficiency of exciplex‐based OLEDs. The maximum external quantum efficiency is improved by ≈105%, from 3.9% to 8.0%, and maintains 7.5% at a luminance of 1000 cd m−2; the codoped devices with the spacer also exhibit excellent spectrum stability under various applied voltages. Magneto‐electroluminescence properties are also investigated to verify the radiative process of long‐range coupled electron–hole pairs. Furthermore, based on this codoped system, low driving voltage, high efficiency, and low efficiency roll‐off are achieved in the orange phosphorescence OLEDs, indicating the advantage of this method in exciton regulation and utilization. This work can assist for further research to achieve high‐performance exciplex‐based OLEDs by adjusting the exciton behavior in device structure design.

2D lanthanide coordination polymers constructed from semirigid ligand 4-(pyridin-3-yloxy)-phthalic acid: Synthesis, structure and luminescence

Three new compounds (Ln–CPs) [Ln(PPDA)(C2O4)0.5(H2O)2]n·nH2O (Ln = Tb (1), Eu (2) and Gd (3)) were synthesized based on semirigid ligand 4-(pyridin-3-yloxy)-phthalic acid (H2PPDA) under solvothermal conditions. Ln–CPs 1–3 exhibit isomorphic 2D layered network with rhombic windows. Notably, oxalic acid in the resulting framework is formed by in situ reaction under solvothermal and acidic conditions. Solid state luminescent studies indicate that 1 and 2 show characteristic green and red emissions of the corresponding Ln3+ ions, respectively, while 3 exhibits blue emission arising from PPDA2− ligand. Then, by adjusting the co-doping ratio of different Ln3+ ions into the well-defined host framework, a series of codoped Ln–CPs Eu3+-doped 1 and Eu3+, Tb3+-doped 3 are synthesized, showing tunable luminescence emissions including white-light emitting.

Ga-Sn Co-Doped ZnO Films via Sol-Gel Route

Zinc oxide (ZnO) has gained worldwide attention due to its direct wide band gap and large exciton binding energy, which are important properties in the application of emerging optoelectronic devices. By doping ZnO with donor elements, a combination of good n-type conductivity and good transparency in the visible and near UV range can be achieved. Co-doping ZnO with several types of dopants is also beneficial in improving the electronic properties of ZnO films. To the best of our knowledge, the fundamental properties of gallium-tin (Ga-Sn) co-doped ZnO (GSZO) films were rarely explored. In this work, we attempt to coat GSZO films on glass substrates via sol-gel spin-coating method. The Ga-Sn co-doping ratio was fixed at 1:1 and the concentration of the dopants was varied at 0.5, 1.0, 1.5, and 2 at.% with respect to the precursor. The AFM image show granular features on the morphology of all GSZO films. All samples also exhibit a preferential c-axis orientation as detected by XRD. The XRD indicates higher crystal quality and larger crystallite size on GSZO thin films at 2.0 at.% and agrees well with the AFM results. However, the transparency and optical band-gap of the GSZO thin films degrade with higher co-doping concentration. The best electrical properties were achieved at co-doping concentration of 1 at.% with conductivity and carrier density of 7.50 × 10-2S/cm and 1.37 × 1016cm-3, respectively. At 1.0 at.% co-doping concentration, optimal optical transmittance and electrical properties were achieved, making it promising in the application of optoelectronics.

Enhanced photoelectric performance of rutile SnO2 by Mg-assisted S-O coupling

The electronic structures and conducting mechanism of (Mg, S) co-doped rutile SnO2 were explored through density functional theory (DFT) calculation. Results showed that the acceptor metal Mg assisted the coupling of the incorporated S with a neighbouring O in SnO2, which introduced new energy levels into the forbidden band of SnO2 and thereby improved the photoelectric performance of SnO2. Based on this result, we proposed an integrated strategy that combines DFT calculations with experiments to study the photoelectric performance of (Mg, S) co-doped SnO2 prepared through hydrothermal method. Conducting glass (FTO) was used for the preparation of (Mg, S) co-doped SnO2 electrode. Scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and ultraviolet–visible diffuse reflectance spectroscopy results confirmed the incorporation of Mg and S elements into the SnO2 cell. Furthermore, photoelectric performance tests revealed that (Mg, S) co-doping can improve photoelectric performance. The maximum photocurrent (0.50 μA/cm2) and smallest impedance were obtained at a co-doping ratio of 5%. Therefore, the (Mg, S) co-doped SnO2 is a strong candidate for photoelectrocatalysis.