Metal features with nanometer scale edge definition have been created on an atomicallyclean Si(001) surface with a stencil. These features were subsequently characterized byscanning tunneling microscopy and scanning electron microscopy. The stencil was broughtinto contact with the substrate while allowing the stencil to pivot so that it self-alignedparallel to the substrate surface. With this simple method, feature edge spreading wasreduced to less than 10 nm in the best case. At the same time, atomic resolution images ofthe metal feature/silicon boundary showed significant spreading of a sub-monolayer ofmetal beyond the deposited area. This spreading may pose a limit on the ultimateresolution that can be achieved for metals deposited on atomically clean siliconsurfaces.