In this study, the finite difference eigenmode approach was used to conduct a theoretical investigation and analysis of the chalcogenide slot waveguide. Maximum power confinement factors of 36.3 % and 56.7 % were found for the slot and cladding areas, respectively. The bidirectional eigenmode expansion approach was then used to develop the chalcogenide slot Bragg grating (SBG) sensor, which was manufactured by electron beam lithography and inductively coupled plasma etching. The chalcogenide SBG has a minimum feature size of 150 nm, which makes it easier to manufacture than silicon photonics Bragg grating devices. Measurement results show a high sensitivity of 325 nm/RIU compared to the conventional evanescent field waveguide sensor in the sensing experiment.
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