Cheung's Method Research Articles

Advancements in CIGS/ZnS heterojunction solar cells: Experimental and numerical analysis

This study presents a comprehensive experimental investigation conducted on a CIGS-based solar cell incorporating a ZnS buffer layer. The primary objective was to determine key parameters of the CIGS/ZnS heterojunction, including parasitic resistances (Rs and Rsh), ideality factor (n), and barrier height (ϕB), using experimental current-voltage (I-V) characteristics over a temperature range of 150 K to 300 K under dark conditions. The heterojunction was modelled using a single-diode electrical circuit that accounted for parasitic resistances. Two methods were employed for parameter determination: direct analysis of the (I-V) curves and Cheung's method. Additionally, the charge transport mechanism within the heterojunction is investigated and discussed. Furthermore, the performance of the Al:ZnO/i:ZnO/ZnS/CIGS/Mo solar cell was assessed using the SCAPS-1D simulator, demonstrating an initial solar energy conversion efficiency of 15.01 %. To enhance this efficiency, a hole transport layer (HTL) was integrated between the back electrode and the absorber layer. Extensive studies were conducted to optimize the thickness and doping density of the HTL, including a comparative analysis of different materials used as HTLs. These optimizations resulted in a significant increase in conversion efficiency, reaching up to 28.68 %.

Investigation of the Structural, Optical, and Electrical Properties of ZnO/4‐Amino‐2‐Methylquinoline p–n Heterojunction by Spin‐Coating Method

A p–n heterojunction diode is fabricated using a p‐type 4‐amino‐2‐methylquinoline (C10H10N2) on an n‐type ZnO film and its structural, optical, and electrical properties are investigated. First, a ZnO thin film is prepared on an ITO substrate by spin coating. Subsequently, this ZnO film is coated with a C10H10N2 film using the same method. X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV–vis spectroscopy, and current–voltage measurements are carried out on the prepared films. According to the XRD result, sharp peaks at 320.081, 340.488, and 360.548 are observed in the hexagonal phase of ZnO. At these angles, grain sizes of 15.308, 15.179, and 13.715 nm are calculated. The absorption peaks of electronic transitions π→π*, n→π*, and d→d* in the ZnO/C10H10N2 heterojunction film are observed. From the IV diagram, it can be seen that the heterojunction structure has a diode characteristic. From the IV data, the rectification factor is calculated to be 6.59 and its graph is drawn. With the Cheung method, ideality factor (n) = 2.87, series resistance (RS) = 1 MΩ, and shunt resistance (RSh) = 5 kΩ are found.

Influence of 700 keV O3+ ion implantation on current transport properties of Cr/p-GaN SBD’s

In the present study we show a detailed investigation into the influence of 700 keV O3+ ion implantation in Cr/p-GaN SBDs on electrical characteristics / current transport properties. Also the damage events along the trajectory of the ion beam were quantitatively estimated through SRIM and TRIM simulations. The Current-voltage (I-V) characteristics were analyzed using different methods such as Cheung and Cheung's method and Norde’s method to obtain different electrical parameters. The values of n and ϕB decrease up to a fluence of 1 × 1014 ions cm−2, and show a fractional increase at a fluence of 1 × 1015 ions cm−2. Further, a drastic increase in values of series resistance (RS ) of SBDs with an increase in fluence was observed. In the forward-bias voltage regions, the Cr/p-GaN SBDs conduction mechanism shows an increasingly ohmic behavior with an increase in fluence, which may be attributed to thermally generated carriers. At low voltage, the reverse current conduction mechanism is due to Poole-Frenkel emission. For the high voltage region, Schottky emission mechanism becomes more prominent. The changes in electrical parameters are closely related to the defect and damage profiles estimated through SRIM/TRIM simulations, which are strongly dependent on the dose of the 700 keV O3+ ion implantation. Additionally, we found that at high doses, the charge transport mechanism changes, with additional defects affecting not only the thermionic emission mechanism but also various current transport mechanisms.

Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

In this work, Schottky Barrier diodes (SBDs) formed on n-Si substrates were created using polyvinyl-chloride (PVC) and graphite/graphene-oxide (Gt/GO) nanoparticles (NPs) doped PVC interlayers and the conduction mechanisms of the structures were compared to the reference Au/n-Si (MS) diode. The characterization methods, including x-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), and Energy Dispersive x-Ray (EDX), were used to analyze Gt/GO NPs and examine their structural, morphological, and analytical properties. In addition to the standard I-V method, modified Norde and Cheung methods were applied to analyze the forward bias I-V characteristics to determine the impact of pure-PVC and (PVC: Gt-GO) interlayers’ main electronic parameters on the SBDs. The surface state density (N ss ) depending on energy was also determined from the forward bias current–voltage by considering the voltage-dependent ideality coefficient, n(V), and barrier height (BH), ΦB(V). The outcomes showed that, as compared to MS structures, both the pure-PVC and (PVC: Gt-GO) interlayer leads to a decrease of n, leakage-current, N ss , an increase of rectification ratio (RR), shunt-resistance (R sh ) and zero-bias barrier-height (Φ B0 ). The differences in the electronic parameters observed between the I-V, Norde, and Cheung functions indicate that these parameters are highly reliant on the voltage and the computation method utilized. The barrier inhomogeneities at the metal/semiconductor surface also affect the current-transport or conduction mechanisms.

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

In this paper, we studied the effect of the passivation of silicon nanowires (SiNWs) by silver nanoparticles (AgNPs) on the efficiency of Ag/SiNWs/Si Schottky diodes. SiNWs are obtained by one-step Ag-assisted chemical etching method. AgNPs were deposited on SiNWs using an electroless dipping method. Schottky junction devices have been successfully made using silicon nanowires coated with silver nanoparticles. The current–voltage (I-V) characteristics of Ag/AgNPs-SiNWs Schottky diode have been investigated by varying the immersion time in silver nitrate solution from 1 to 5 min. The I-V characteristics presented in logarithmic scale confirmed the domination of SCLC conduction mechanism at high voltage. The ideality factor (n), height of potential barrier (φb) and series resistance (Rs) of diodes are calculated by adopting the Cheung method. Compared to the Ag/SiNWs Schottky junction, the diode that presents AgNPs at the interface shows a significant improvement in electrical parameters. The potential barrier reaches 1.09 eV and the ideality factor is reduced to 2.64 with the presence of AgNPs for an immersion time of 1 min. Norde’s equation has also been used to calculate the series resistance and the potential barrier. The results obtained by Norde method are slightly shifted compared to those found by Cheung functions while the findings concerning the optimization of the immersion time are practically the same.

Impedance Spectroscopy and Electrical Properties of Novel Structure of Au/AlCu/SiO2/p-Si/Al

Au/AlCu/SiO2/p-Si/Al is a novel assembly synthesized by the technology of liquid phase epitaxy (LPE). Using impedance spectroscopy the electric and dielectric properties of these structures have been characterized as a function of voltage, frequency, and temperature. All real parts of the impedance curve at different temperatures, voltages, and frequencies formed small peaks at higher frequencies. At low and mid frequencies, the real part of impedance Z′ is independent of frequencies. For all curves of Z″, the imaginary parts of the impedance at dissimilar voltages, frequencies, and temperatures have positive values at low frequencies. At lnf = 5 the Z″ have negative values and create peaks. The growth of Z″ value was consistent with decline temperatures, at high frequencies, the Z″ formed peaks with positive and negative values. The Col-Col diagram, at different temperatures and voltages, was investigated. The conventional Cheung and Nord methods were applied to study the electric factors such as series resistance Rs, barrier height and ideality factor n.

Investigation of AlN-based Schottky type photodetector in visible light detection

In this study, we fabricated an AlN-based Schottky photodetector by thermal evaporation technique using commercial AlN/n-Si heterojunction which was fabricated by hydride vapor phase epitaxy. Thus, Au/Ti/AlN/n-Si heterostructure was obtained and tested for photodetector applications for various light power densities from 20 mW/cm2 to 100 mW/cm2 by I–V characteristics. Various parameters of heterostructure were extracted by thermionic emission theory, Norde and Cheung methods to clear the electrical properties of the Au/Ti/AlN/n-Si. Photodetection parameters such as responsivity, photosensitivity, and specific detectivity values were also studied depending on the changing light power density. The Au/Ti/AlN/n-Si photodetector revealed 1.36 A/W responsivity and 7.99 × 109 Jones specific detectivity values. The photoresponse time was investigated by light on-off transient measurements. The Au/Ti/AlN/n-Si photodetector exhibited fast and linear photoresponse to the illumination. The photocapacitance and photoconductance properties of the Au/Ti/AlN/n-Si photodetector were also studied. The results highlighted that Au/Ti/AlN/n-Si photodetector can be a good candidate for fast-response photodetection applications.

Experimental and Theoretical Investigation of Zr‐Doped CuO/Si Solar Cell

Copper oxide (CuO) is a nanostructured semiconductor material with the potential for solar energy conversion and can be suitable for solar cells when used as a thin film. Herein, nondoped and doped (doping ratios of 1%, 2%, and 3% zirconium [Zr]) CuO thin films on silicon (Si) with the spin‐coating technique are developed. Optical and topological characterizations of CuO thin films are examined by ultraviolet‐visible and X‐ray diffraction. The electrical properties of nondoped and Zr‐doped CuO/Si heterojunctions are investigated with experimental current–voltage measurements in the dark and under illuminated conditions. The electrical behavior of nondoped and Zr‐doped CuO/Si heterojunctions is obtained using the experimental J–V technique and computational Cheung–Cheung and Norde methods. A simulation based on nondoped and Zr‐doped CuO/n‐Si heterojunction solar cells using SCAPS‐1D is completed. Photovoltaic (PV) parameters of experimentally produced and theoretically calculated CuO and Zr‐doped CuO/Si heterojunction solar cells are compared. Accordingly, PV parameters of 1% Zr‐doped CuO/Si solar cells show the highest power conversion efficiency calculated as a function of interfacial defect density and hole carrier concentration.

Role of interfacial layer as PANI–silicene in Si-based photodiodes

Silicene is a 2D monoatomic sheet of silicon and can be used for various applications such as degradation, therapy, and biosafety. Polyaniline (PANI) is a conducting polymer employed for electronic devices. In this study, we synthesized PANI–silicene composites and operated as an external interfacial layer between Al and different type substrates of p-Si and n-Si to compare Schottky-type photodiodes of PANI–silicene/n-Si and PANI–silicene/p-Si. The silicene structures were investigated using X-ray diffractometry (XRD) and scanning electron microscopy (SEM) techniques. Also, the light power intensity dependent of PANI–silicene/n-Si and PANI–silicene/p-Si photodiodes carried out in the range 0–100 mW/cm2 and I–t measurements utilized to determine the response time of the photodiodes. Basic parameters of devices such as ideality factors barrier, height, and series resistance were obtained by Norde and Cheung methods and thermionic emission (TE) theory from I–V graphs. While the PANI–silicene/n-Si exhibited high ideality factor values of 5.49, the PANI–silicene/p-Si photodiodes showed a low ideality factor of 1.48. The photodiode parameters such as detectivity and responsivity were calculated as 6.40 × 109 Jones and 38.9 mA/W for n-Si substrate and 78.2 mA/W and 8.81 × 109 Jones for p-Si substrate. The case of basic electrical properties for PANI–silicene composite interlayer-based photodiodes was analyzed in detail.

Negative Dielectric Constant in Novel Structure of PA-GO Composite /MnO2/Fe3O4/n-Si

This manuscript presents a novel structure of PA-GO composite with MnO2/Fe3O4/n-Si. This assembly was arranged by simple technique. It was examined by scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). The novelty here is that the negative dielectric constant appeared for all considered voltages at the spot point frequencies 1000, 100 and 10 Hz, in spite of all literature proved that the dielectric constant has negative values only at higher frequencies (almost above 1 MHz). Also, the dielectric loss is negative at the higher frequencies at all considered voltages and temperatures. This structure has low dielectric loss tangent (tan δ ranging between 4 to 50) for all investigated voltages and temperatures and also has high rectification ratio reach to 1200 times, and high Rj. The electrical properties of this structure were examined by conventional/dlnI, Nord and Cheung method.

Optoelectronic properties of Au/n-type Si semiconductor structures with SiO2 interlayer

In this study, we investigated the effect of light intensity on electrical and photovoltaic properties using current-voltage (I–V) measurements at room temperature of Au/n-type Si structures with SiO2 interface layer. At each light intensity, the obtained main electrical characteristics such as ideality factors (n), barrier heights (Φbo), rectification ratios (RR), saturation currents (I0) and series resistances (RS) of Au/SiO2/n-type Si structures were calculated from both thermionic emission (TE) and Cheung methods using I–V measurements and compared to each other. Experimental results showed that while the n and I0 values increased with the increase in the light intensity, the Φbo and RR values decreased. While the ideality factor values obtained using the TE method ranged between 1.973 (at dark) and 2.250 (for 100 mW/cm2), these values were obtained between 3.227 and 3.482 using the Cheung method. At the same time, while the barrier height values obtained using the TE method ranged between 0.865 eV (at dark) and 0.817 eV (for 100 mW/cm2), these values were obtained between 0.773 eV and 0.742 eV using the Cheung method. It was observed that while the n values obtained from TE theory were smaller than the values obtained from the Cheung method, the Φbo values were larger than the values obtained from the Cheung function. Furthermore, for the Au/SiO2/n-type Si structures, the photovoltaic parameters such as short circuit current (Isc) and open circuit voltage (Voc) and photocurrent (Iph) were examined under dark, daylight and various light intensities (from 20 to 100 mW/cm2).

Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure

n-Ge heterostructure is fabricated using organic dye interlayers such as sulforhodamine-G (SRG) using low-cost spin coating technique and explored its electrical and structural features. The I–V measurements of the Au/SRG/n-Ge heterostructure (HJ) show good rectification behavior. It has been noticed that the barrier height (0.73 eV) of the Au/SRG/n-Ge heterojunction was significantly higher than the Au/n-Ge Schottky diode (SD) (0.63 eV). Cheung's function and the Norde method has been utilized to evaluate the various barrier parameters to understand the non-ideal behavior of the contacts at higher bias region. The low value of the series resistance for HJ (53 Ω) is observed than compared to the SD without organic dye (2974 Ω). Barrier parameters evaluated from the Norde method were compared with those from the Cheung method and found that they confirmed the consistency of Schottky barrier parameters obtained from both techniques. The transport properties of the HJ and SD in the forward bias region are evaluated using the log (I) vs. log (V) plot. At larger forward bias voltages, a change in the drift of current conduction is observed from Ohmic current conduction to traps-assisted SCLC conduction. This may be ascribed to the presence of defects or traps at the n-Ge and SRG interface possibly associated with the organic dye. Also, the photovoltaic properties of the SRG/n-Ge heterostructures were evaluated at 100 mW/cm2 showing significant photoresponse indicates the usage of SRG dyes in photosensitive applications.

Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure

We fabricated a heterojunction structure composed of n-CdS and p-C10H10N2 films. The CdS film was prepared using the CBD method, while the C10H10N2 film was prepared using the spin coating method. Later, we performed the current-voltage (I-V) measurement of this PN diode which we made using Keithley 2400 sourcemeter. As can be seen from the logI-V diagram, this heterojunction structure exhibits rectifying properties. Using traditional methods, an ideality factor (n) of 1.93 and a barrier height value (Φb) of 0.79 eV were determined. An ideality factor of more than one indicates non-ideal I-V behavior in the CdS/C10H10N2 heterojunction diode formed. The interface layer, interface states and series resistance are some of the causes of this deviation. Moreover, Cheung's functions and a modified Norde function were used to determine the diode parameters, such as ideality factor, barrier height, and series resistance. With the Cheung method, n=4.33, series resistance (RS)=168.65 kΩ and Φb=0.62 eV were found. Additionally, RS=686.08 kΩ and Φb=0.78 eV were found by the Norde method. Consistent barrier height values were found in all methods through comparison, suggesting compatibility. However, it was discovered that the series resistance values yielded by the Norde function exceeded those obtained by the Cheung functions.

Optoelectric response of Schottky photodiode with a PVP: ZnTiO3 nanocomposite as an interfacial layer

This work aims to study the photo-response of the fabricated silicon-based Al/PVP:ZnTiO3/p-Si photodiode (PD) in a wide range of illumination intensities. To make a metal-polymer/nanocomposite-semiconductor (MPS) PD, a thin film of PVP:ZnTiO3 nanocomposite is deposited at the interface of the metal-semiconductor (MS) structure. Information regarding the preparation and manufacturing procedures is provided. Through the examination of the current-voltage (I–V) behavior, essential electrical properties such as leakage current (I0), barrier height (ΦB0), ideality factor (n), series and shunt resistances (Rs, Rsh), energy-dependent interface states density (Nss), photocurrent (Iph), and photosensitivity (S) are acquired. The thermionic emission (TE) theory, along with the Norde and Cheung methods, is employed to calculate the parameters ΦB0, n, and Rs. The values of ΦB0 and Rs are decreased by raising the illumination intensity while the n value is increased. In addition, the illumination coefficient (α) and the value of ΦB0 in the ideal case are determined from the ΦB0-P and ΦB0-n plots. The efficiency (η) of the sample is calculated at each illumination intensity whose maximum value is 2.30 % at the intensity of 450 mW/cm2. The illumination-dependent photocurrent is investigated at the negative bias region that shows a good linear behavior in the ln(Iph)-ln(P) profile. The photosensitivity (S) of the fabricated PD is obtained as ⁓500 which is, compared with previous PDs. These findings demonstrate that the developed silicon-based MPS-type PD with a structure of Al/PVP:ZnTiO3/p-Si exhibits a good photo-response and can successfully replace traditional MS PDs in optoelectronic and photovoltaic applications.

Electrical characterization of Al/SnO2/PbO/Si double layer MOS under the moderate radiation effect

The metal-oxide semiconductor-based structures are among the most prominent optoelectronic devices that can be used in several application fields. The performance of these structures is strongly dependent on the local radiation dose. In this study, we examined the sample structures with and without radiation. The electrical parameters of the studied samples such as ideality factor, series resistance, saturation current, barrier height, and zero-bias barrier height were obtained by performing the forward bias I–V data analyses. The values of n indicate that the irradiation emission mechanism is dominated. Also, this value depends on the evaluation method of the device. According to the Cheung method, while the ideality factor was found to be 5.72 before irradiation, it was found to be 7.04 after irradiation with 30 kGy. According to the TE method, on the other hand, the value of the ideality factor was found to be 6.337 before irradiation while it was found to be 5.016 after irradiation. The high figures of n were considered to be the result of the interface states of the metal/oxide/semiconductor, i.e. the device, and the barrier height's image force lowering. The obtained dielectric parameters do not have to be absolutely correct, especially when there is radiation on the device. It was found that the value of Rs extremely depended on the particular current transport mechanism's contributions to the total current. The non-ideality factor n increases with the 30 kGy irradiation according to the Cheung method while it does not according to the TE theory. At the same time, the forward bias I–V characteristics and their logarithmic plots reveal two distinct linear sections in the entire linearly increasing voltage.

Impact of thickness on optoelectronic properties of α-MoO3 film photodetectors: Integrating first-principles calculations with experimental analysis

This study focused on investigating the optoelectronic properties of molybdenum trioxide (α-MoO3) thin films using the atomic layer deposition (ALD) technique through different cycle numbers and theoretical investigation. Initial band gap calculations using standard DFT with GGA-PBE resulted in a value of 1.19 eV, which deviated significantly from experimental measurements. The GGA + U method with Hubbard U corrections was applied for the first time to improve the accuracy. This refinement led to a more precise band gap value of 3.09 eV, closely matching previously reported experimental data. The electronic parameters of the α-MoO3 photodetector, such as ideality factor (n), barrier height (Φ0), and series resistance (Rs), were analyzed using the thermionic emission theory and confirmed by Cheung and Nord's methods. The results demonstrated that the sample deposited with 100 pulses exhibited higher photodetector performance under UV illumination, despite having a lower Rs.

Machine learning models for efficient characterization of Schottky barrier photodiode internal parameters

We propose ANN-based models to analyze and extract the internal parameters of a Schottky photodiode (SPD) without presenting them with any knowledge of the highly nonlinear thermionic emission (TE) expression of the device current. We train, evaluate and demonstrate the ML models on thirty-six private datasets from three previously published devices, which denote current responses under illumination and ambient temperature of graphene oxide (GO) doped p-Si Schottky barrier diodes (SBDs). The GO doping levels are 0%, 1%, 3%, 5%, and 10%. The illumination ranged from dark (0 mW/cm2) to 30 mW/cm2. The predictions are then made completely at the intensity of 60 mW/cm2. For each diode, some values of the barrier height (phi ), ideality factor (n), and series resistance (R_s) independently calculated using the Cheung–Cheung method were included in the training dataset. The predictions are done at unspecified intensities on the model development data at 80 and 100 mW/cm2, and on external data at 5% and 20% GO doping which were not part of the development dataset. The ANN achieved a mean square error and mean absolute error score below 0.003 across all datasets. This demonstrates the effective learning capabilities of the ANN models in accurately capturing the photo responses of the photodiodes and accurately predicting the internal parameters of the Schottky Barrier Diodes (SBDs), all without relying on an inherent understanding of the thermionic emission (TE) equation for SBDs. The ANN models achieved high accuracy in this process. The proposed ML models can significantly reduce analysis time in device development cycles and can be applied to other datasets in various fields.

Experimental and numerical study of the CIGS/CdS heterojunction solar cell

In this paper, we have performed a complementary and comparative analysis between an experimental and simulation study of the CIGS/CdS bulk heterojunction solar cell.The electrical parameters of this heterojunction modeled by a diode in the presence of parasitic resistances (Rs; Rsh), are determined by studying the properties of the (I–V) characteristic in the dark, and at different temperatures from 130 K to 300 K. We used the (ALM) method to determine the parasitic resistances. Also, by using the thermionic emission theory, we have determined other parameters, like ideality factor n, the barrier height φB, and the mobility μ, and we compared these parameters with those determined by using Cheung's method. The ideality factor values at different temperatures which is greater than unity provided us with information about the electronic transport mechanism in the heterojunction.To complete our study, we performed a numerical simulation of the CIGS/CdS structure to determine the efficiency of the solar cell at different temperatures, taking into account the values of the parasitic resistances that we identified earlier. We also explored ways to improve the efficiency of our cell, in particular by using a HTL (NiO) layer. This layer increased the efficiency of the cell from 9.89% to 19.55% at a temperature of 300 K, a significant improvement for the advancement of thin film solar cell technology. In sum, this study makes a valuable contribution to the research field by demonstrating the positive impact of using HTL layers to improve the efficiency of thin film solar cells.

Electrical and optical properties of p-Si based structures with lead oxide interfaces

Lead oxide thin film was performed by evaporation technique on the p-Si type substrate. The studied film was characterized using the UV–VIS spectroscopy method. The reflectance and transmittance measurements conducted at the normal incident of light between 300 and 1000 nm were analyzed to determine the optical dispersion of the film. It was estimated that the film' optical transmittance was 77% in the visible range The obtained absorption coefficient greater than 104 cm−1 showed that the electron transition was direct. The optical band gap energy value of the film was computed as 3.22 eV. Also, the electrical features of Al/PbO/p-Si diode were examined by observing its current–voltage (I-V) behavior at room temperature. Zero-bias barrier height (Φb0), ideality factor (n), series resistance (Rs) were obtained using the conventional Norde, I-V and Cheung methods. Also, the diode’s dominant current conduction mechanisms were examined using the forward bias I-V data.

Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors.

Ultrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 °C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON-OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 °C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 × 1010 cm-2 and external quantum efficiency of 1.72 × 1011. The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord's methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (Φ0), and series resistance (Rs). The n-factor values were higher in the low voltage region of the I-V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces.