Applying diluted iron, nickel, and copper solutions to front and back side spin‐on, respectively, and to immersion spiking, we investigated the contamination mechanism of silicon wafers. The immersion procedure was found to be advantageous as a batch process,with the drawback that it can only be applied at lower concentration levels than the spin‐on technique and, therefore, it was much more tedious to control. The immersion technique led to a chemisorption of metal ions on the native oxide. In comparison to iron and nickel, copper was less readily adsorbed on the wafer surface by immersion. A thermodynamic model interprets the conspicuous results of copper contamination. Spin‐on spiking led to a dried film of the contamination solution on the wafer. Chemisorption processes could not be confirmed under the given spin‐on conditions. Thus, the contamination level on the wafer was the same for nickel, iron, and copper when spiking solutions of the same concentration were used. After the metal drive‐in step for nickel and copper at 800°C and for iron at 1000°C, a recovery rate of 50–100% was found by chemical analysis. In order to avoid cross contamination, different concentration levels or different spiking elements should not be treated in the same thermal drive‐in batch process. Charge‐to‐breakdown measurements of capacitors were used to evaluate the influence of surface metal contamination and, after drive‐in, for gettering studies. © 1999 The Electrochemical Society. All rights reserved.
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