Third generation, group III-nitrides (InN, GaN, AlN and their alloys) semiconductor nanostructures have emerged as an important class of materials for a host of critical applications ranging from classical optoelectronics to quantum to artificial photosynthesis (i.e., photo(electro) chemical water splitting and CO2 reduction). Group III-nitrides exhibit unique properties including broad, tunable, direct energy bandgap, large exciton binding energy, giant spontaneous and piezoelectric polarization field, perfect conduction/valence band edge positioning to drive the redox reactions for fuel productions, interesting surface/interface properties, making them the only materials of choice for the afore-mentioned applications. In this talk, I will first present some recent advances of their epitaxy growth/synthesis, electronic, optical, and quantum properties, including the development of high efficiency visible and deep UV LEDs/laser diodes, and the realization of monolithic micro-LEDs.A highly efficient and robust artificial photosynthesis integrated device and system (APIDS) is the key for achieving carbon-neutral alternative to fossil fuels. III-nitrides can be used as an ideal building block of APIDS because of their recently discovered photocatalytic properties demonstrating great potential in artificial photosynthesis compared to decade long studied photocatalysts. Herein, the most recent advance in the utilization of III-nitrides-based artificial leaves for building a carbon-neutral substance and energy recycling system will be presented, focusing on solar water splitting toward H2 and solar CO2 reduction toward fuels and chemicals. I will also present on III-nitrides nanostructures-based non-classical on-demand quantum light sources (single photon and entangled photons sources) generation and their usage in quantum communication and optical quantum computing protocols. Overall, the talk focuses on the unique potential of group III-nitrides materials for emerging applications.
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