Objectives: To develop simple method for Cu2ZnSnS4 (CZTS) thin film deposition suitable for solar cell device application. Method: Cu2ZnSnS4 (CZTS) thin film was deposited by using simple chemical spray pyrolysis technique for substrate temperature (270±5) ◦C. Analytical reagent Grade 0.025 M Copper chloride (CuCl2), 0.0125 M zinc chloride (ZnCl2), 0.0125 M Tin chloride (SnCl4.5H2O) and 0.05 M Thiourea (SC (NH2)2) were used as sources of copper (cu+ ), zinc (Zn+), tin (Sn+ ) and sulfur (S- ) ions respectively. The structure, morphology and optical band gap of the film were investigated by using X-ray Diffractometer (XRD), Scanning Electron Micrograph (SEM) and UV-Visible spectroscopy respectively. Energy dispersive X-ray Analysis (EDX) was used for elemental analysis of deposited CZTS film. Findings: The XRD spectra showed that CZTS film exhibit polycrystalline tetragonal crystal structure with preferential orientation along (112) plane. The crystallite size calculated using full width at half maximum (FWHM) of (112) peak was to be 36.82 nm. SEM image revealed that film composed of regular arrangement of spherical granules of average size 1.61 µm. The purity of the CZTS phase was confirmed by elemental analysis. The calculated energy band gap (Eg) by using Tauc\'s plot was about 1.62 eV. The dc resistvity estimated by using IV characteristics of the CZTS film was to be 2.3× 10-2 Ω-cm. It is concluded that CZTS film prepared using present deposition technique can be used for solar cell device applications. Keywords: Chemical spray technique; CZTS Thin Films; band gap; structure of CZTS; electrical resistivity; elemental analysis