A chemical-bond model for the formation of the gold surface states at the silicon/silicon dioxide interface is suggested. For analysis of the gold surface states at the interface, a three-layer model of a real surface is employed. Gold forms Au-Si, an intermetallic compound, when diffused into silicon from the back of the MOS device, and has negative charge character at the silicon/silicon dioxide interface. But when gold diffuses through the oxide, it acts as a positive ion embedded in the oxide and introduces positive charge at the silicon/silicon dioxide interface.
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