Chemical Bath Deposition Technique Research Articles

Tin Oxide Bilayer as Effective Electron Transport Layers for Efficient and Stable Perovskite Solar Modules

Tin oxide (SnO2) is one of the most promising electron transport layers (ETL) for the commercialization of perovskite solar cells (PSCs) due to its excellent electron mobility and high transparency, along with its low processing temperature. However, the inherent defects, nonuniform coating, and poor surface morphology of SnO2 may be detrimental to the physicochemical properties, such as conductivity and electron mobility at the interface, lead to a decrease in the open‐circuit voltage (VOC) and a reduction in device stability. In this study, a method that combines atomic layer deposition and chemical bath deposition techniques to solve these issues is presented. The presence of bilayer ETLs enhances the coverage of the SnO2 film and optimizes the morphology of the buried surface of perovskite, which not only facilitates the interfacial charge transfer but also suppresses recombination reactions. As a result, a significant increase in VOC and efficiency has been achieved compared to devices with only a single layer. Additionally, the large‐area perovskite solar module (active area: 48.0 cm2) achieves a champion efficiency of 17.9%. The PSCs retain more than 93% of their initial efficiency after 700 h of continuous operation under 1‐sun illumination and 25 °C.

Development of a highly sensitive non-enzymatic electrochemical cholesterol biosensor based on Ag with Cu2O nanomaterial deposited on TiO2 nanotubes

We developed a highly sensitive non-enzymatic biosensor based on hybrid Ag-Cu2O@TNTs nanostructure aggregate for the detection of cholesterol. A facile anodization process on a thin titanium alloy (Ti6Al4V) plate was achieved to deposit TiO2 nanotubes (TNTs). Subsequently, TNTs was decorated with Cu2O nanomaterials (NM) using wet chemical bath deposition (CBD) technique. The electro-deposition of silver (Ag) nanoparticles on Cu2O@TNTs hybrid aggregate produced high electroactive surface area which enhanced the electron transfer rate. The structure of Ag-Cu2O@TNTs was examined using X-ray diffraction (XRD), transmission emission microscopy (TEM), and field emission scanning electron microscopy (FE-SEM). Cyclic voltammetry (CV) and amperometry techniques were utilized to study the electrochemical behaviour of nanostructures. The hybrid nanostructure demonstrated great sensitivity (12140.06 μAmM−1cm−2) compared to pure TNTs and Cu2O@TNTs with low detection limit (0.057 mM) and fast response. This study highlights exciting potential of nanocomposites in advancement of reproducible and selective biosensor applications.

NiFe Prussian blue analog cocatalyzed TiO2/In2S3 type-II heterojunction for solar water splitting

Due to the excellent stability of titanium dioxide (TiO2), there is still value in improving its solar-to-hydrogen conversion efficiency through tremendous attempts. Metal sulfides with a narrow bandgap are good candidates to broaden the ultraviolet light absorption of TiO2 into the visible light region. However, sulfides suffer from the photocorrosion issue, leading to poor stability. Herein, a type-II heterojunction of TiO2/In2S3 is fabricated by a hydrothermal method, and a NiFe Prussian blue analog (NFP) overlayer is deposited on the surface of TiO2/In2S3 through a chemical bath deposition technique. Under AM1.5G illumination, a photocurrent density of 1.81 mA cm-2 can be obtained with NFP coated TiO2/In2S3 at 1.23 V vs. reversible hydrogen electrode, which is six folds of the photocurrent of TiO2. This photocurrent value can reach up to about 90% of its theoretical photocurrent. During a 12 h stability test, the TiO2/In2S3/NFP photoanode exhibits a high photocurrent retention of 95.17% after an initial transient decrease. The type-II heterojunction of TiO2/In2S3 can efficiently boost the charge separation because of the built-in electric field and enhance the visible-light absorption because of the narrow bandgap of In2S3. A NFP overlayer serves as the cocatalyst for water oxidation reaction due to its valence changes of nickel and iron elements. NFP cocatalyst can rapidly extract the photogenerated holes from In2S3 and then improve the charge separation/injection efficiencies. Thanks to chemical stability of NFP, its coating can also make In2S3 resistant to photocorrosion by physically separating the photoanode from the electrolyte. Therefore, there is a good synergistic effect between the TiO2/In2S3 heterojunction and NFP cocatalyst. This work provides some crucial insights for the interface engineering and material design in photoelectrochemical systems.

Influence of Magnesium Doping Concentrations and annealing on the Transmittance and Energy Band-gap of Sb2S3 Thin Films Deposited via Chemical Bath Deposition Technique

The incorporation of thin film materials into a wide range of technological applications has attracted considerable interest owing to their distinct properties and versatile functionalities. In this study, Magnesium alloyed and Antimony sulphide (Sb2S3) thin films were successfully deposited on glass substrates by chemical bath deposition technique. The films were grown at room temperature of constant pH. The concentrations of magnesium varied between 0.1M and 0.3M. The films were annealed at annealing temperature between 100˚C and 300˚C at a fixed annealing time of 1 hour. The films were characterized using UV-spectrophotometer to investigate the variation of optical and solid state properties with wavelength in the UV-VIS-NIR region. The result showed that the presence of the alloying agent and annealing treatments modified the optical and solid state properties of the films significantly. The transmittance of the films was high. Annealing led to reduced transmittance due to increased crystallite size, notably in films doped with 0.1M Mg2+ ions and annealed at 200˚C, suggesting enhanced photon absorption. The energy band gaps were found to be direct and in the range of 1.25 eV to 1.72 eV for the as grown films and 1.15eV to 1.3eV for the films annealed at annealing temperatures 300˚C. The study identifies a direct correlation between magnesium doping concentration, annealing conditions, and shifts in the energy band-gap of the films. The values of the energy band gaps are all within the range suitable for use of the layers as absorbers in hetero-junction solar cell devices for sustainable energy applications.

Effect of Order of Reagents Addition on Optical and Structural Properties of CdS Quantum Dot Prepared by Chemical Bath Deposition Technique

Cadmium sulfide quantum dots were synthesized and deposited on glass substrates by chemical bath deposition (CBD) technique using cadmium sulfate and thiourea solutions in the presence of a 4,4’-(1,2-ethanediyldinitrilo)bis-(2-pentanone) (EDDBP) tetradentate ligand as a complexing agent. The order of reagents addition was varied to deposit films that were characterized for their surface morphological, optical, structural, and solid-state properties using a scanning electron microscope (SEM), a UV-visible spectrophotometer, an X-ray diffractometer (XRD), and Brunauer-Emmet-Teller (BET) analyses. The optimal condition for film deposition using the normal sequence of reagents addition was found at pH 8-12 and 298-353 ± 1K and gave films of 2.40-321.06 nm thickness, while the variation in the order of reagents addition gave improvements in the film properties. The optical properties and the observed direct band gaps (1.75-3.16 eV) of the films suggest usage in electroluminescent and solar cell devices since they have a first-order transition. The XRD patterns of the quantum dots indicated hexagonal wurzite structures, while the BET confirmed their mesoporous and nanonature.

Chemical bath deposited CdTe thin film: Optical, electrical, and photoresponse aspects

Owning a narrow bandgap, remarkable optical and electrical properties with notable stability has made cadmium telluride (CdTe) an immensely vital semiconductor to develop cutting-edge optoelectronics. Taking these properties in to account, CdTe thin film is deposited employing the chemical bath deposition (CBD) technique. The X-ray diffraction analysis of the as-deposited thin film unveiled the composite crystalline structure, incorporating cubic, hexagonal, and tetragonal phases. The energy dispersive X-ray analysis and X-ray photoelectron spectroscopy ascertained the chemical composition of CdTe thin film. Distinctive Raman peaks are detected at 141 and 167 cm−1, signifying the presence of Cd-Te bond in the deposited thin film. The comprehensive evaluation of scanning electron micrographs emphasized the firm adhesion of the film to the substrate and displayed a uniform overlay of microstructures resembling rods. The observations from atomic force microscopy unveiled uniform grain structure with topographical features of hills and valleys. The UV-Visible spectroscopic examination elucidated that the as-deposited thin films exhibits a direct optical bandgap value of 1⋅59 eV. Temperature-dependent analysis of d.c. electrical resistivity exhibited a descending pattern, substantiating thin film's semiconducting attributes. The investigation into the photoresponse attributes of the thin film is accomplished by subjecting it to a polychromatic light, green and red monochromatic light source with an intensity of 50 mW/cm² employing three different biasing voltages. The thin film demonstrated maximum photocurrent for red light source than polychromatic and green light with maximum responsivity of 59⋅4 μA/W and detectivity of 17⋅7 × 106 Jones. These findings provide valuable insights on the photoresponse behavior of CBD deposited CdTe thin film in its as-deposited form.

Chemical bath deposition-based synthesis of tin sulfide on silicon substrate and its application as a photodetector

Tin sulfide (SnS) is an attractive compound semiconductor for photovoltaic and sensing applications because of its abundance and non-toxicity. In the present work, the synthesis of SnS thin films on silicon substrates by chemical bath deposition (CBD) technique has been demonstrated. Tin chloride (SnCl2.2H2O) and thiourea were used as the tin and sulfur sources to deposit the SnS films with triethanolamine (TEA) as the complexing agent and sodium hydroxide (NaOH) as alkaline bath. To understand the growth mechanism, a time interrupted growth series was adopted at a temperature of 90 °C for different time durations i.e., 60 min, 120 min, and 180 min. A photosensor was fabricated using the SnS/Si heterojunction and its performance was investigated through electrical (current-voltage) and optical (photo-response) measurements. The I–V characteristics of the developed photodetector were recorded under dark and different light intensities. The device exhibited significant response to light even without a bias voltage.

Effect of cadmium chloride treatment on CdS buffer layer and its impact on growth of CdTe layer: An experimental and numerical studies

This paper focuses on the study of the structural, morphological, electrical and optical properties of the pristine and CdCl2 treated CdS buffer layer as well as of the CdTe thin films deposited on the pristine and CdCl2 treated CdS buffer layers. CdS buffer layers have been grown by Chemical bath deposition technique and CdTe absorber layers have been deposited by thermal evaporation method. These thin films have been characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Hall Effect measurements and UV–Vis spectroscopy. XRD analysis demonstrated that there is an increase in the intensities of peaks as well as crystallite size of the CdCl2 treated CdS buffer layer as well as of the CdTe thin films deposited on them. SEM analysis illustrated there is improvement in grain size and compactness of CdCl2 treated CdS buffer layer as well as that of the CdTe thin films deposited on them than that of the pristine samples. From the optical and electrical properties analysis it is observed that there is enhancement in absorbance and decrement in bandgaps with increased values of carrier concentration, mobility, and conductivity of the CdCl2 treated CdS buffer layer and the CdTe thin films deposited on the CdCl2 treated CdS buffer layer respectively. Finally, glass/FTO/CdS/CdTe and glass/FTO/CdS/CdCl2/CdTe solar cells were numerically simulated by SCAPS using the experimental data obtained in the present study to extract J-V curve and the influence of temperature and defect density on the J-V characteristics were also studied. The extracted parameters are Voc = 1.00V, Jsc = 30.41 m A/cm2, F·F. = 85.31% and ƞ = 25.94% of the glass/FTO/CdS/CdCl2/CdTe solar cell. Hence these solar cells can be fabricated experimentally as their suitability has been proved through numerically simulated results.

Cathodized Stainless Steel Mesh for Binder-Free NiFe<sub>2</sub>O<sub>4</sub>/NiFe Layer Double Hydroxides Oxygen Evolution Reaction Electrode

Oxygen evolution reaction (OER) is an essential reaction commonly applied in various energy storage and conversion technologies. One of the common issues of OER lies in its low kinetic activity. Therefore, developing durable, low-cost, and high-performance OER catalysts is critical. Recently, many attempts have used stainless steel mesh (SSM) as the substrate for OER electrodes because SSM is abundant, cheap, and durable. Nickel/iron-based materials, i.e., NiFe2O4/NiFe layer double hydroxides (LDHs), are regarded as one of the most excellent OER catalysts in alkaline electrolytes, making them attractive low-cost materials for OER catalysts. However, synthesizing NiFe2O4/NiFe LDHs directly on the surface of SSM is challenging. Modifying the SSM surface through cathodization has proved to enhance the adhesion and OER activity. Moreover, the cathodization technique is facile and cost-effective. In this work, the surface of SSM is modified by cathodization treatment. Subsequently, NiFe2O4/NiFe LDHs are deposited onto the surface of treated SSM via a low-temperature one-step chemical bath deposition technique. This synthesis is a binder-free method; the resulted electrodes show excellent OER performance without the binder effects. The as-prepared electrodes have a small Tafel slope of 125.4 mV/dec (1 M KOH) and high durability (10 mA/cm2 for 50 hours).

Co-deposition of CuO:ZnO Nanocomposite on n-Type Si Substrate by Chemical Bath Deposition (CBD) Technique for Photovoltaic Application

Co-deposition of CuO:ZnO Nanocomposite on n-Type Si Substrate by Chemical Bath Deposition (CBD) Technique for Photovoltaic Application

EFFICIENT SYNTHESIS OF ZNO AS AN ELECTRODE OF PIEZOELECTRIC NANOGENERATORS

Piezoelectric nanogenerators (NGs) hold immense promise as self-powered devices for harvesting mechanical energy from the environment. This study introduces an efficient and scalable synthesis method for zinc oxide (ZnO) nanorods, a pivotal material in piezoelectric nanogenerators (NGs), with several key results. A Chemical Bath Deposition technique is employed, optimizing parameters such as growth time, temperature, and precursor concentrations to achieve well-aligned and high-quality ZnO nanorods. The structural and morphological characteristics of the synthesized nanorods are systematically investigated using advanced characterization techniques. The synthesized ZnO nanorods exhibit an average length of 400nm, demonstrating their slender shape. Furthermore, the study determines an energy gap value of 3.5 eV for multilayer zinc oxide thin films, indicating the transition from the valence band to the conduction band. Notably, thermal annealing at 500°C leads to a substantial increase in average output voltage, reaching 1.95 V, a fourfold improvement compared to as-deposited nanopowders. These findings emphasize the efficiency and potential of the proposed synthesis method and underscore its practical applications in enhancing energy harvesting capabilities for sustainable power generation from mechanical sources in piezoelectric NGs.

Impact of Rhodamine B solution on charge carrier generation and photocatalytic performance in CdS/TiO2 heterostructures synthesized by CBD.

This article presents the study of Rhodamine B solution effects on the generation of charge carriers and the photocatalytic performance of CdS/TiO2 heterostructure films. CdS/TiO2 heterostructure films were synthesized using the chemical bath deposition technique (CBD). The structure and morphology of the heterostructures were studied by X-ray diffraction (XRD), and Scanning Electron Microscope (SEM), respectively. The optical properties of the CdS/TiO2 heterostructures were characterized using a UV–vis spectrophotometer. The results showed that the CdS/TiO2 optical band gap energy (Eg) was 2.75 eV, between the TiO2 band gap energy (3.38 eV) and the CdS band gap energy (2.57 eV). The electrochemical characterization indicated that the photocurrent of the CdS/TiO2 heterostructure decreased from 29 mA to 12.4 mA when the UV-vis light source was turned off. The density of charge carriers generated on the surface of the CdS/TiO2 was simulated employing the WXAMPS software. The results suggest that the thickness of the TiO2 layer should be optimized to allow the activation of CdS. Finally, this study concludes that the presence of rhodamine B in the solution attenuates light transmission and affects the generated electron-hole pairs, resulting in poor photocatalytic behavior.

Investigating the effects of varying sulfur concentration on ZnSxSe1-x (0 ≤ x ≤ 1.0) thin films prepared by photo-assisted chemical bath method

Zinc sulfur-selenide (ZnSxSe1-x) (0 ≤ x ≤ 1.0) thin films were grown on glass substrates using photo-assisted chemical bath deposition technique and the deposited samples were annealed in an open-air furnace at 250 ℃ for 3 h. X-ray diffraction analysis revealed a phase transition from hexagonal ZnSe to cubic ZnS as x changes from 0 to 1.0. Raman scattering showed two longitudinal optical modes due to ZnSe structure. The effects of S and Se ions variation is observed by the change in surface morphology from nanoflakes to spherical particles as x increased. The presence of the expected elementary composition was confirmed by the energy dispersive x-ray spectroscopy. The bandgap of the films was found to increase from 2.68 to 3.50 eV with a corresponding decrease in crystallite size (11.9 – 7.1 nm) as x varied from 0 to 1.0. Photoluminescence excitation and emission showed defect emission peaks ascribed to intrinsic and extrinsic deep level defects such as Zn2+ or S2- ions vacancies and interstitials. The emission colours were tuned from red to yellowish-green with increased x values as confirmed from Commission Internationale de L’Eclairage analysis. The tunability of the ZnSxSe1-x structural, optical and morphological properties makes it a good candidate for optoelectronic applications.

EFFECT OF DEPOSITION PARAMETER ON EXTERIOR MORPHOLOGY, STRUCTURAL AND OPTICAL CHARACTERISTICS OF CHEMICAL BATH-DEPOSITED ZINC OXIDE THIN FILMS

In this research, Zinc Oxide thin films (ZOTF) have been placed onto a glass substrate at different times of deposition via chemical bath deposition (CBD) technique. The influence of deposition time (DT) on the exterior morphology, elemental, structural and optical behaviors of the prepared thin films has been studied through various characterization techniques for example field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) spectroscopy, X-ray diffraction (XRD) analysis and UV-Vis spectroscopic analysis, respectively. According to FESEM images, the thin film surface existing on a dense and flower-like surface morphology was changed to flake-like structure due to increase of DT. EDX analysis exhibited the mass % and atomic % of Zn which is extant in greater proportion but O is lesser in the prepared ZOTF. The XRD pattern exposed the hexagonal wurtzite structure of ZOTF. The UV-V is results exhibited a decrease in transmittance and the optical band gap was significantly influenced by the alteration of DT. The observed high transparency of these thin films in the visible region makes them appropriate for utilization as transparent windows in numerous optical device applications.

Effect of bath temperature on the efficiency and properties of Cu2O/ZnS/ZnO heterojunctions thin film prepared by electrodeposition and chemical bath deposition methods

A novel p-n type Cu2O/ZnS/ZnO heterojunction thin film was successfully fabricated by a combination of electrodeposition and chemical bath deposition techniques. The effect of bath temperature (T = 75, 80, 85, 90 °C) on the growth of ZnS layers was investigated. The influence of ZnS buffer layers on the properties and efficiency of the prepared heterojunction thin films were examined using XRD, FE-SEM, AFM, EDS, UV–Vis, and electrochemical measurements. The analysis of prepared films revealed that the Cu2O/ZnS/ZnO heterojunction exhibits a unique combination of hexagonal structure of ZnO and the cubic structure of Cu2O. It was found that all the heterojunction films exhibit the growth of composed pyramids and corner grains with a homogenous distribution. The optical band-gap of the deposited ZnS buffer layers decreased from 3.46 eV to 3.35 eV with an increase of bath temperature from 75 °C to 90 °C. Moreover, the obtained results revealed that the thicknesses and the surface roughness of ZnS buffer layers increased when bath temperature increased. Mott-Schottky results of the heterojunctions indicate a p-type semiconductor behavior for the Cu2O, while it was observed an n-type semiconductor behavior for the ZnO and ZnS layers. As a result, the photocurrent response of Cu2O/ZnO heterojunctions with ZnS layer insertion was enhanced from 0.175 to 0.730 mA, which can be attributed to the reduced electron transfer resistance, enlarged photo-generated (e−/h+) carrier separation efficiency, and enhanced light absorption due to the presence of ZnS buffer layers. These results highlight the advantages of the bath temperature on the deposition of ZnS for photoelectrochemical and solar cells applications.

Impact of a precise pH value change on the characteristics of deposited tin monosulphide films onto a flexible substrate

The chemical bath deposition technique (CBD) is considered the cheapest and easiest compared with other deposition techniques. However, it is highly sensitive to effective parameter deposition values such as pH, temperature, and so on. The pH value of the reaction solution has a direct impact on both the nucleation and growth rate of the film. Consequently, this study presents a novel investigation into the effect of a precise change in the pH reaction solution value on the structural, morphological, and photoresponse characteristics of tin monosulphide (SnS) films. The films were grown on a flexible polyester substrate with pH values of 7.1, 7.4, and 7.7. The X-ray diffraction patterns of the grown films at pH 7.1 and 7.4 confirmed their polycrystalline nature. Additionally, an observed alteration in the crystal structure occurred as the pH value increased from 7.1 to 7.4, resulting in a transition from an orthorhombic crystal structure to a cubic crystal structure. In contrast, the XRD pattern of the grown film at pH 7.7 revealed that it was amorphous. The field-emission scanning electron microscopy images revealed a flower-like morphology for the grown film at 7.1, whereas the grown films at 7.4 and 7.7 revealed a grain morphology. The results also showed that the pH values were also having an important effect on the energy gap value (Eg) of films; the Eg values were 1.46, 1.57, and 1.65 eV for pH 7.1, 7.4, and 7.7, respectively. The photodetectors fabricated using grown films exhibited excellent photoresponse characteristics when subjected to near-infrared (750 nm) illumination. It was also demonstrated that the photodetector using the cubic structure film possessed faster response times and greater sensitivity than the photodetector using the orthorhombic structure film.

PbS/p‐Si NW Heterojunction Thin Film Device for Room Temperature NH3 Detection

AbstractOne dimensional heterostructures with a definite interface where the host particle is decorated with the secondary material have been widely exploited for photocatalysis because of increased efficiency. Herein we report the synthesis of PbS−Si NW heterojunction using low temperature chemical bath deposition (CBD) techniques. Temperature, time, and the complexing agents of the growth solution were optimized to control the morphology and the resultant properties of the heterojunction thin films. These synthesized thin films exhibit high sensor responses in the presence of ammonia (NH3) due to an increase in the surface area and efficient p‐n junction formation. Additionally, there is a vast improvement in the detection limit of the sensors as our device was found to respond at concentrations as low as 0.1 ppm. Growth conditions are found to have significant influence on the sensor response.

Crystallographic, Electric and Optical Analysis of Cs1+ Doped H3PW12O40 Nanocrystalline Thin Films Deposited by Microwave Assisted Chemical Bath Deposition Method

AbstractThe polyoxometalates like phosphotungstic acid (PTA) (H3PW12O40) and Cesium (Cs+) doped phosphotungstic acid (Cs‐PTA) (Cs3‐PW12O40) nanocrystalline thin films were effectively deposited by microwave assisted chemical bath deposition (MA‐CBD) technique. The structural characterization of microwave aided H3PW12O40 and Cs3‐PW12O40 thin films were done by Thermo gravimetric (TG) and Differential thermal analysis (DTA) techniques, X‐ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR), Scanning electron microscopy (SEM) and Energy dispersive X‐ray analysis (EDAX). The TGDTA analysis revealed that the complete decomposition process of Cs‐PTA compound is carried out at 600 °C and which is comparatively lower than that of other chemical method. The X‐ray diffractogram confirms the polycrystalline nature of the synthesized H3PW12O40 and Cs3‐PW12O40 thin films having spinel cubic crystal structure. The lattice parameter of H3PW12O40 and Cs3‐PW12O40 compound found to be in the range of 11.34 Å to 11.46 Å. The main absorption peaks observed nearly 800, 1000 and 1100 cm−1 confirms the formation of H3PW12O40 and Cs3‐PW12O40 materials. The porous structure of nanocrystalline spherical grains morphology of H3PW12O40 and Cs3‐PW12O40 films were confirmed from SEM analysis. An appropriate peaks of metal ions like P, W, O and Cs observed in EDAX spectra shows the stoichiometric formation of H3PW12O40 and Cs3‐PW12O40 thin films.

Improving the Device Performance of CZTSSe Thin-Film Solar Cells via Indium Doping.

Cation incorporation emerges as a promising approach for improving the performance of the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (<10 nm) layer of In2S3 is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process. The successful doping of In improved crystal growth and promoted the formation of larger grains. Furthermore, the CZTSSe TFSCs fabricated with In doping exhibited improved device performance. In particular, the In-CZTSSe-2-based device showed an improved power conversion efficiency (PCE) of 9.53%, open-circuit voltage (Voc) of 486 mV, and fill factor (FF) of 61% compared to the undoped device. Moreover, the small amount of In incorporated into the CZTSSe absorber demonstrated reduced nonradiative recombination, improved carrier separation, and enhanced carrier transport properties. This study suggests a simple and effective way to incorporate In to achieve high efficiency and low Voc loss.

Effect of tin inclusion on zinc sulfide thin films properties for photocatalytic applications

Tin doped zinc sulfide (Sn:ZnS) thin films are synthesized by chemical bath deposition (CBD) technique. Tin concentration is varied from 0 to 12 at.-% by a step of 3 at.-%. Structural investigation by X-ray diffraction (XRD) analysis shows the crystallization of the material along the cubic structure as well as an improvement of the crystallinity after Sn inclusion. The surface morphology and film thickness are examined by scanning electron microscopy (SEM) revealing some surface modifications after tin incorporation. Also, some microstructures are observed for the sample elaborated with 9 at.-% Sn. These new microstructures are due to the segregation of tin in the film. Collected optical data show high transmittance in the visible range. The band gap energy is estimated to be about 3.8 eV. Impedance spectra show single semi-circle indicating a single relaxation process. Photocatalytic activity is evaluated and an increment of the degradation efficiency is remarked with the increase of the irradiation time.