Crystallographic, Electric and Optical Analysis of Cs1+ Doped H3PW12O40 Nanocrystalline Thin Films Deposited by Microwave Assisted Chemical Bath Deposition Method

Abstract

AbstractThe polyoxometalates like phosphotungstic acid (PTA) (H3PW12O40) and Cesium (Cs+) doped phosphotungstic acid (Cs‐PTA) (Cs3‐PW12O40) nanocrystalline thin films were effectively deposited by microwave assisted chemical bath deposition (MA‐CBD) technique. The structural characterization of microwave aided H3PW12O40 and Cs3‐PW12O40 thin films were done by Thermo gravimetric (TG) and Differential thermal analysis (DTA) techniques, X‐ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR), Scanning electron microscopy (SEM) and Energy dispersive X‐ray analysis (EDAX). The TGDTA analysis revealed that the complete decomposition process of Cs‐PTA compound is carried out at 600 °C and which is comparatively lower than that of other chemical method. The X‐ray diffractogram confirms the polycrystalline nature of the synthesized H3PW12O40 and Cs3‐PW12O40 thin films having spinel cubic crystal structure. The lattice parameter of H3PW12O40 and Cs3‐PW12O40 compound found to be in the range of 11.34 Å to 11.46 Å. The main absorption peaks observed nearly 800, 1000 and 1100 cm−1 confirms the formation of H3PW12O40 and Cs3‐PW12O40 materials. The porous structure of nanocrystalline spherical grains morphology of H3PW12O40 and Cs3‐PW12O40 films were confirmed from SEM analysis. An appropriate peaks of metal ions like P, W, O and Cs observed in EDAX spectra shows the stoichiometric formation of H3PW12O40 and Cs3‐PW12O40 thin films.