Charge Transition Levels Research Articles

The origin of broadband blue emission in zero-dimensional organic lead iodine perovskites: A first-principles study.

Broadband blue emission in zero-dimensional perovskites has received considerable attention, which is very important for the realization of stable blue-light emitters; however, the underlying formation mechanism remains unclear. Based on first-principles calculations, we have systematically studied the self-trapped excitons (STEs) behavior and luminescence properties in 0D-(DMA)4PbI6 perovskite. Our calculations show that there is a significant difference between the intrinsic STE luminescence mechanism (∼2.51eV) and experimental observations (∼2.70eV). In contrast, we found that the iodine vacancy (VI) is energetically accessible and exhibits a shallow charge transition level at ∼2.69eV (0/+1) above the valence band maximum, which provides the initial local well for the STEs formation. Moreover, the low electronic dimension synergistic Jahn-Teller distortion facilitates the formation of extrinsic excitons self-trapping. Further excited state electronic structure analysis and configuration coordinate diagram calculations confirmed that the broadband blue emission in 0D-(DMA)4PbI6 is the origin of VI-induced extrinsic STEs instead of intrinsic STEs. Therefore, our simulation results rationalize the experimental phenomena and provide important insights into the formation mechanism of STEs in low-dimensional perovskite systems.

Optical and electrical studies on the TS defect in 4H-SiC

Abstract When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers
occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence
analyses on the single defect level. They reveal that the three occurring spectral
signatures TS1, TS2 and TS3 originate from one single defect. Their polarization dependences expose
three different crystallographic orientations in the basal plane, which relate to the projections of
the nearest neighbor directions. Accordingly, we find a three-fold level-splitting in ensemble studies,
when applying mechanical strain. This dependency is quantitatively calibrated. A complementary
electrical measurement, deep level transient spectroscopy, reveals a charge transition level of the TS
defect at 0.6 eV above the valence band. For a future identification, this accurate characterization
of its optical and electronic properties along with their response to mechanical strain is a milestone.

Role of local structure in the optical and electronic properties of oxygen vacancies in different crystal phases of Ga2O3

We investigate the structural, electronic, and optical properties of oxygen vacancies (VO) in crystalline α, β, and ε−Ga2O3 using density functional theory (DFT) calculations with the PBE0-TC-LRC functional. Our results reveal that the charge transition levels (CTLs) associated with VO exhibit significant variations depending on the crystal phase and the coordination environment of surrounding atoms. In particular, VOs surrounded by tetrahedral Ga atoms (T-Ga) exhibit deeper CTLs compared to those surrounded by octahedral Ga atoms (O-Ga). We also observe distinct atomic relaxations, with larger displacements of T-Ga atoms compared to O-Ga atoms in the vicinity of VOs. Using linear-response time-dependent DFT, we investigate the optical transitions of VO and identify two distinct types of transitions: defect state to conduction band state and valence band to defect state. These results can be used to better understand the optical properties of VO defects in Ga2O3 films. Published by the American Physical Society 2024

Addressing accuracy by prescribing precision: Bayesian error estimation of point defect energetics

With density functional theory (DFT), it is possible to calculate the formation energy of charged point defects and in turn to predict a range of experimentally relevant quantities, such as defect concentrations, charge transition levels, or recombination rates. While prior efforts have led to marked improvements in the accuracy of such calculations, comparatively modest effort has been directed at quantifying their uncertainties. However, in the broader DFT research space, the development of Bayesian Error Estimation Functionals (BEEF) has enabled uncertainty quantification (UQ) for other properties. In this paper, we investigate the utility of BEEF as a tool for UQ of defect formation energies. We build a pipeline for propagating BEEF energies through a formation-energy calculation and test it on intrinsic defects in several materials systems spanning a variety of chemistries, bandgaps, and crystal structures, comparing to prior published results where available. We also assess the impact of aligning to a deep-level transition rather than to the VBM (valence band maximum). We observe negligible dependence of the estimated uncertainty upon a supercell size, though the relationship may be obfuscated by the fact that finite-size corrections cannot be computed separately for each member of the BEEF ensemble. Additionally, we find an increase in estimated uncertainty with respect to the absolute charge of a defect and the relaxation around the defect site without deep-level alignment, but this trend is absent when the alignment is applied. While further investigation is warranted, our results suggest that BEEF could be a useful method for UQ in defect calculations.

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

The deep-level drain current transient spectroscopy (Id-DLTS) measurements of Al-doped SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) strongly suggest that the reduction in the channel mobility at low temperatures is related to a shallow trap detectable at 70 K. Using the Shockley–Reed–Hall (SRH) theory, the level of this trap has been extracted to be around 0.15 eV below the conduction band minimum of SiC. Density functional theory (DFT) calculations of AlSiNCAlSi and AlSiOCAlSi defect complexes have found one configuration of the AlSiOCAlSi complex, which has a charge transition level within the SRH extracted trap level range. Therefore, we suggest that these AlSiOCAlSi defects are likely candidates for traps responsible for the channel mobility reduction.

Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels

4H Silicon carbide (SiC) is widely recognized as one of the most advanced wide bandgap semiconductors used in the production of high-efficiency power electronic devices. Impurities play a crucial role in achieving the desired electrical properties in 4H-SiC, yet the understanding of impurities in this material remains limited. In this study, first-principles formation-energy calculations were employed to establish a comprehensive database of formation-energy diagrams for impurities in 4H-SiC. This database includes valuable information on site preference, lattice distortion, solubility, and charge transition levels (CTLs) of the impurities. The site preference for each impurity is closely related to factors such as the Fermi energy, chemical potential, and the impurity species itself. To assess the lattice distortion caused by each impurity, a comparison was made between the volume changes before and after doping. Moreover, the solubility of each impurity was determined using the detailed balance theory, thereby enabling a direct measure of the maximum impurity concentration achievable in the material. Based on the CTLs, the impurities in 4H-SiC were classified into four categories: n-type impurities, p-type impurities, amphoteric impurities, and non-electroactive impurities. This comprehensive property database for impurities in 4H-SiC provides valuable insights for tailoring the material properties through controlled doping, thereby ultimately leading to enhanced performance of power electronic devices.

Comparing thermoluminescence data on lanthanides in 36 compounds with predictions from vacuum referred binding energy diagrams

Thermoluminescence (TL) often involves the liberation of a charge carrier (an electron or a hole) from a charge carrier trapping centre into the conduction band (CB) or the valence band (VB) with subsequent recombination with a counter charge carrier at a luminescence centre. TL glow peak analysis can provide the energy ΔEt needed to liberate such charge carrier which then defines the location of the charge transition levels (CTL) of the carrier trapping centres below the CB-bottom or above the VB-top. The temperature at the maximum of the TL glow peak changes 3–4 K per 0.01 eV change in ΔEt thus providing an extremely sensitive probe of energy changes in CTLs. This work collects and reviews data on glow peaks due to electron or hole release from lanthanide dopants in 36 different inorganic compounds. To compare results from different literature sources, data were always re-analysed using the same method that is solely based on the temperature at the maximum of the glow peak. The changes in ΔEt along the lanthanides series provides insight at the sub 0.1 eV level on the changes in CTL energies. We will use a compound-dependent parameter to account for the nephelauxetic effect and a compound dependent parameter to account for lattice relaxation around the lanthanide. Together with information from lanthanide luminescence spectroscopy, the vacuum referred binding energy (VRBE) diagram will be constructed for each compound. The lanthanide electron or hole trap depth read from the VRBE scheme will be compared with that derived from the TL glow peak. Surprisingly good agreement will be demonstrated.

Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy

We investigated the C-related complexes in highly C-doped GaN by electron spin resonance (ESR) spectroscopy, Fourier transform IR spectroscopy (FTIR), and minority carrier transient spectroscopy (MCTS) measurements. In the ESR spectra, two resonances with g values of 2.02 and 2.04 were found to be assigned by (0/−) deep acceptor and (+/0) charge transition levels of carbon substituting for nitrogen site (CN). In the FTIR spectra, two local vibrational modes positioned at 1679 and 1718 cm−1 were confirmed to be associated with tri-carbon complexes of CN–CGa–CN (basal) and CN–CGa–CN (axial), respectively. In the MCTS spectra, we observed the hole trap level of E v + 0.25 ± 0.1 eV associated with the tri-carbon complexes, which are the dominant C-related defects, suggesting that these complexes affect the electronic properties in the highly C-doped GaN.

Intrinsic point defects investigation in InAlAs with extrapolated defect transition level

The intrinsic point defects in InAlAs have been studied by first-principles calculations, with a simplified approach to rescale the charge transition levels from the semilocal to the hybrid functional level. Both antisite defects and vacancy defects exhibit a high sensitivity to growth conditions. For Al-poor, In-poor and As-poor growth conditions, AsAl, AsIn and VAs demonstrate the lowest defect formation energy, respectively. All antisite defects including AsIn, AsAl, InAs and AlAs, exhibit donor-like behavior in the band gap as well as VAs. Both VIn and VAl are amphoteric defects, which can behave as donor defects or acceptor defects.

Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles

We investigate the native point defects in the long-wavelength infrared (LWIR) detector material Hg0.75Cd0.25Te using a dielectric-dependent hybrid density functional combined with spin–orbit coupling. Characterizing these point defects is essential as they are responsible for intrinsic doping and nonradiative recombination centers in the detector material. The dielectric-dependent hybrid functional allows for an accurate description of the bandgap (Eg) for Hg1−xCdxTe (MCT) over the entire compositional range, a level of accuracy challenging with standard hybrid functionals. Our comprehensive examination of the native point defects confirms that cation vacancies VHg(Cd) are the primary sources of p-type conductivity in the LWIR material given their low defect formation energies and the presence of a shallow acceptor level (−/0) near the valence-band maximum. In addition to the shallow acceptor level, the cation vacancies exhibit a deep charge transition level (2−/−) situated near the midgap, characteristic of nonradiative recombination centers. Our results indicate that Hg interstitial could also be a deep center in the LWIR MCT through a metastable configuration under the Hg-rich growth conditions. While an isolated Te antisite does not show deep levels, the formation of VHg–TeHg defect complex introduces a deep acceptor level within the bandgap.

Investigation on the valence state stability and optical properties of Mg2GeO4:Cr

In this work, the valence states and optical properties of chromium-doped Mg2GeO4 are investigated via first-principles methods. The formation energies and thermal charge transition levels show that the site occupation and valence states of chromium are strongly related to the growth condition: Cr3+ dominates in the Mg sites under Mg-poor conditions, and Cr4+ dominates in the Ge sites under Ge-poor conditions. With the lithium co-doping, the Fermi-level is pinned below the midgap, and the formation energies of chromium-doped Mg sites become the lowest either Mg-poor or Ge-poor conditions, suggesting that the co-doping of lithium ions promotes the chromium to preferentially occupy Mg sites, in good agreement with experiments. Furthermore, the excitation and emission processes of chromium ions are investigated, and our results recommend that the near-infrared emission is related to the 4T2 to 4A2 transition of Cr3+ at the Mg sites and the infrared emission is related to the 3T2-3A2 transition of Cr4+ at the Ge site. Our results help to understand the stability of the valence states of chromium ions doped Mg2GeO4 and the effects of ions co-doping in regulating the chromium valence states, as well as the corresponding optical properties of different types of chromium ions.

Modeling the Zigzag Curves of Transition Metal Ions' Charge Transition Levels in Crystals.

Predicting the defect levels of transition metal (TM) dopants in the band gap of crystals is critical in determining the charge states of TM dopants and explaining their electronic and optical properties. By analyzing the calculated charge transition levels and the crystal-field strengths of all the 3d-TM ions in several insulators, we demonstrate that the variation trend of the 3d-TM dopants in a crystal is a scaling of the variation of 3d-electron binding energies (ionization potential) of the free TM ions corrected by adding the contribution of the 3d-orbital's crystal-field splitting. We therefore develop a model to predict the relative location of TM ions' defect levels in the band gap from the defect level and crystal-field splitting of a reference TM ion in the host of concern. The model is applied to predict the defect levels of the series of TM ions in β-Ga2O3 and ZnO, which have moderate to small band gaps, making some of the levels fall into the conduction or valence bands. These results show that the model may serve as a quick reference for related material design and optimization.

Unraveling the Photoluminescent Properties of Sb-Doped Cd-Based Inorganic Halides: A First-Principles Study.

Sb-doped Cd-based inorganic halides, with varying connections of CdCl6 octahedra ranging from 0D to 3D, exhibit a variety of photoluminescent properties. Single-band emission is observed in Sb-doped Rb4CdCl6 (0D) and Cs2CdCl4 (2D), while dual-band emission is seen in Sb-doped RbCdCl3 (1D) and CsCdCl3 (3D). Density-functional-based first-principles calculations were conducted. The results reveal that cation vacancies, acting as charge compensators, influence the luminescence properties of dopant centers. In CsCdCl3, the local cation vacancy VCd″ for Sb3+ at the Cd2+ site ([Sb□Cl9]6-) significantly modifies the photoluminescence property, accounting for the observed dual-band emission alongside the nonlocal compensation case. This effect is insignificant in Sb-doped Rb4CdCl6, RbCdCl3, and Cs2CdCl4, due to the large distances or high formation energies of Cd vacancies in these hosts. However, in Sb-doped RbCdCl3, two different potential energy minima, one that involves typical structure relaxation and the other that is off-center, lead to the observed dual-band emission. Furthermore, the shift of the charge transition level illustrates the different temperature dependences of the dual-band emission caused by the charge-compensating point defects. These insights not only enhance our understanding of luminescent materials based on halides containing ns2 dopants but also provide valuable guidance for the design and optimization of luminescent materials.

The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides

Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both unintentional p-type and n-type conductivity, as well as sub-band gap defect levels measured via tunneling or optical spectroscopy. These conflicting interpretations of the deep versus shallow nature of the chalcogen vacancies are due in part to shortcomings in prior first-principles calculations of defects in the semiconducting two-dimensional TMDs that have been used to explain experimental observations. Here we report results of hybrid density functional calculations for the chalcogen vacancy in a series of monolayer TMDs, correctly referencing the thermodynamic charge transition levels to the fundamental band gap (as opposed to the optical band gap). We find that the chalcogen vacancies are deep acceptors and cannot lead to n-type or p-type conductivity. Both the (0/−1) and (−1/−2) transition levels occur in the gap, leading to paramagnetic charge states S=1/2 and S = 1, respectively, in a collinear-spin representation. We discuss trends in terms of the band alignments between the TMDs, which can serve as a guide to future experimental studies of vacancy behavior.

Substrate Doping and Defect Influence on P-Rich InP(001):H Surface Properties

Density-functional theory calculations on P-rich InP(001):H surfaces are presented. Depending on temperature, pressure and substrate doping, hydrogen desorption or adsorption will occur and influence the surface electronic properties. For p-doped samples, the charge transition levels of the P dangling bond defects resulting from H desorption will lead to Fermi level pinning in the lower half of the band gap. This explains recent experimental data. For n-doped substrates, H-deficient surfaces are the ground-state structure. This will lead to Fermi level pinning below the bulk conduction band minimum. Surface defects resulting from the adsorption of additional hydrogen can be expected as well, but affect the surface electronic properties less than H desorption.

Effect of temperature on lanthanide charge transition levels and vacuum referred binding energies

Location of lanthanide levels in the bandgap, vacuum referred binding energy (VRBE) in the lanthanide ground state and energy of lanthanide charge transition levels (CTLs) are just three different namings for the same concept. A concept of importance for the performance of lanthanide activated compounds. Energy differences of CTLs with the conduction band bottom and valence band top are important when it concerns e.g. lanthanide luminescence, charge carrier trapping, and valence stability. Effect of temperature on CTL energy or VRBE has so far never been addressed despite that luminescence application and thermoluminescence studies may span a temperature range from 10 K to 1000 K. In this work information on the bandgap (or energy of host exciton creation) around 10 K and at RT in compounds is gathered to demonstrate that bandgap decreases by 0.1 eV to 0.3 eV when temperature increases to RT. A similar decrease will be demonstrated for the energy of electron transfer from the VB to a trivalent lanthanide. The findings have consequences for VRBE-diagram construction, i.e. the experimental parameters for such construction should all apply to the same temperature. They also have consequences on how to relate luminescence thermal quenching energy barriers and TL derived electron and hole trap depths with a VRBE diagram. By proper evaluating the effects of temperature, accuracy of VRBE diagrams and consistency with luminescence and thermoluminescence data can be improved.

An estimator for the Coulomb repulsion parameter U to generate vacuum referred binding energy schemes for lanthanides in compounds

The U-value defined as the energy difference between the Eu4+/3+ and Eu3+/2+ charge transition levels (CTLs) is the most important parameter in constructing vacuum referred binding energy diagrams (VRBEs) with all the lanthanide CTLs with respect to the vacuum level of energy. The parameter is difficult to determine from experiment and the aim of this work is to establish a method to estimate the U-value from the average electronegativity of the cations in the compound. Since the U-value is controlled by the same physical processes, i.e., covalence and anion polarizability, as the centroid shift ϵc of the Ce3+ 5d configuration, one may estimate the U-value from that centroid shift. That method provides already good values for U for about 175 different compounds. Those U-values are compared with the average cation electronegativity χav, and relations will be established from which the U-value can be estimated with about ±0.1 eV accuracy from just the composition of the compound. It can be applied to all types of stoichiometric inorganic compounds like the halides (F, Cl, Br, I), chalcogenides (O, S, Se), and nitrides (N). The U-value complemented with the bandgap and the energy needed for electron transfer from the valence band top to a trivalent lanthanide dopant is then sufficient to construct a VRBE diagram with all lanthanide levels with respect to the vacuum level and the host valence and conduction bands.

Case of the Bromine Vacancy in Cs4PbBr6.

Typically defect tolerance is equated with a lack of deleterious defects or with abundant defects creating only shallow levels. Here, we address the idea that deep defects, when unavoidable, do not guarantee harmful consequences. Using halogen vacancy as a common defect among halides, we explore its behavior in Cs4PbBr6. It is a large gap material (band gap of ∼4 eV) known for its green emission at ∼520 nm. We show that its Br-vacancy is indeed a deep defect as obtained from hybrid density functional calculations. An analysis of the configuration coordinate diagram corresponding to the defect's charge transition levels enables us to conclude that the nonradiative recombination cycle will be hampered by an extremely slow hole capture process. Therefore, Br-vacancy will not suppress light emission in Cs4PbBr6. Although this finding does not signal that all deep defects will behave similarly, it indicates that defect tolerance may be achievable despite their occurrence.

Band offsets and point-defect charges of the aluminum and hafnium oxides in contact with the Cu(In,Ga)Se2 chalcopyrite

Surface passivation of CuInSe2 (CIS) and related Cu(In,Ga)Se2 (CIGS) chalcopyrite materials by depositing selected dielectric layers has been a major research activity aiming to reduce interface recombination and increase the electrical efficiency of chalcopyrite-based thin-film solar cells. The present study reports calculations based on density-functional theory and ab-initio thermodynamics that examine the origin of field-effect passivation from alumina and hafnia two wide-gap, predominantly ionic insulators that have exhibited promising passivation qualities in silicon-based microelectronics. The source of fixed charges within the bulk lattices of both oxides was studied by determining the thermodynamically most favorable charge states of their native defects within the admissible ranges of the metal and oxygen chemical potentials. An alignment of the electron bands based on the branch-point energies was performed in order to correctly place the defect charge-transition levels with respect to the band edges of the CIS and the CIGS materials. The trends and predictions of the sign of the fixed charges in either insulator were obtained as a function of temperature, oxygen partial pressure and Fermi-level position inside the band gaps of CIS and CIGS. The findings are discussed in connection with existing experimental studies that extracted the magnitude and polarity of the fixed charges of both alumina and hafnia by analyzing the electrical properties of the CIGS/insulator interfaces.

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4).

Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is still unclear. Most prominently, the Si dangling bond or K-center has been identified as an amphoteric trap center. Nevertheless, experiments have shown that these dangling bonds only make up a small portion of the total density of electrical active defects, motivating the search for other charge trapping sites. Here, we use a machine-learned force field to create model structures of amorphous Si3N4 by simulating a melt-and-quench procedure with a molecular dynamics algorithm. Subsequently, we employ density functional theory in conjunction with a hybrid functional to investigate the structural properties and electronic states of our model structures. We show that electrons and holes can localize near over- and under-coordinated atoms, thereby introducing defect states in the band gap after structural relaxation. We analyze these trapping sites within a nonradiative multi-phonon model by calculating relaxation energies and thermodynamic charge transition levels. The resulting defect parameters are used to model the potential energy curves of the defect systems in different charge states and to extract the classical energy barrier for charge transfer. The high energy barriers for charge emission compared to the vanishing barriers for charge capture at the defect sites show that intrinsic electron traps can contribute to the memory effect in charge trap flash devices.