Charge Accumulation Behavior Research Articles

A back-gate bias effect model considering the charge accumulation behavior above the field oxide for ultra-thin SOI NMOS devices

This paper reports an improved back-gate bias effect model considering hole accumulation at the Si/SiO 2 interface above the field oxide for ultra-thin SOI NMOS devices using an effective charge concentration in the hole accumulation region. As confirmed by the PISCES results, the improved body effect model provides a much better accuracy in the threshold voltage and the body effect coefficient for the ultra-thin SOI NMOS devices as compared to the previous model.