Characteristics Of MOS Devices Research Articles

Some Effects of “Trichloroethylene Oxidation” on the Characteristics of MOS Devices

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MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel : K. H. Zaininger and C. C. Wang, Solid-St. Electron.13 (1970), p. 943

MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel : K. H. Zaininger and C. C. Wang, Solid-St. Electron.13 (1970), p. 943

MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel

Various devices have been fabricated using silicon films grown epitaxially on low aluminum-rich spinel substrates. The insulating substrate provides complete isolation of the semiconductor devices and eliminates the parasitic capacitances of the back-biased p− n junctions. The low aluminum-rich spinel offers the advantages of better thermal stability and easier surface preparation for silicon epitaxy over both the conventional high aluminum-rich (MgO:3Al 2O 3) and the stoichiometric (MgO:Al 2O 3) materials. MOS capacitors, MOS transistors, and vertical junction diodes were constructed and studied using films with mobilities equal to or near the bulk values. Information on MOS capacitance vs. bias behavior, transistor characteristics, diode junction properties, and minority carrier lifetime was obtained. The silicon-spinel composites were also characterized by physical methods, and the nature of the defect structures was examined.

On the effect of mobility variation on MOS device characteristics

An empirical approximation is used to predict the effect of surface-field dependent mobility on MOS device characteristics. Mobility dependence on both gate and drain voltages is considered. The approximation is verified by comparison with experimental device characteristics.

The influence of oxidation and high temperature treatment on MOS device characteristics

The influence of oxidation and high temperature treatment on MOS device characteristics

Displacement Damage in MOS Transistors

The changes in MOS device characteristics produced by neutron irradiation from the Northrop TRIGA reactor have been observed. Three damage mechanisms have been identified: an increase in net surface state density, a decrease in substrate resistivity, and a decrease in carrier mobility in the channel. The surface effect is usually dominant, although the bulk resistivity effect becomes increasingly important as the resistivity of the substrate is decreased. An exact closed form expression for the turn-on voltage has been derived by obtaining a solution to Poisson's equation in the gate region. The open circuit gate to substrate capacitance as afunction of gate to substrate voltage has been obtained by numerical integration techniques in terms of the charge density and dielectric constants present in the SiO2 layer and Si substrate. For both enhancement and depletion devices, an increase in positive charge density was apparent in the oxide region. It is postulated that the observedincrease in positive charge density is due to creation of mobile positive ions, and that the decreasing net accumulation rate with increasing flux is due to a diffusion or recombination process competing with the creation process. On this basis, a rate effect is expected.