Silicon carbide fibers are used in silicon carbide fiber reinforced silicon carbide composite (SiCf/SiC) as reinforcement materials because of their outstanding mechanical properties, high-temperature durability and oxidation resistance. Owing to its excellent high-temperature performance, SiCf/SiC finds extensive application in materials exposed to extreme environments for long periods, such as nuclear fusion reactors, gas turbines, and rocket nozzles. Transition metal-based carbides, in particular hafnium carbide, have attracted considerable attention owing to their high melting point, high self-diffusion coefficient and chemical bonding energy. This study aims to improve the high-temperature creep characteristics of polycrystalline silicon carbide fibers by dispersing hafnium carbide nanocrystals in crystalline silicon carbide fibers and the changes in the microstructure, crystal phase and crystallite size were observed under various sintering conditions by different experiments. The results confirmed that hafnium carbide was uniformly dispersed, and that the crystal size grew to approximately 40 nm at a sintering temperature of 2000 °C. For high-temperature property evaluation, bend stress relaxation tests were conducted at temperatures in the range of 1000–1500 °C, and the effects of hafnium carbide were compared with those of other single silicon carbide fibers.
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