Characteristics Of Bipolar Transistors Research Articles

Calculation of the breakdown characteristics of bipolar transistors using a two-dimensional model

The location of avalanche-breakdown in the common emitter output characteristics of bipolar transistors has been calculated for a circular emitter geometry. A two-dimensional model takes account of the very important voltage drop across the base spreading resistance. The dependence of the breakdown points on the bias voltage and the series resistance at the base terminal can be described by simple formulas, which agree quite well with experimental results.

Crystallographic defects in epitaxial silicon films

A review of the salient theories advanced to account for the formation of crystallographic defects in epitaxially deposited silicon films on silicon substrates is presented. Experimental observations of defect generation processes in epitaxial films due to slip bands and point defect complexes in the substrate are discussed with an analysis of the possible mechanisms involved. The effects of growth stacking faults on p-n junction and bipolar transistor characteristics are also discussed.

Calculation of the breakdown characteristics of bipolar transistors using a two-dimensional model : Hans-Martin Rein. Solid State Electronics19, 145 (1976)

Calculation of the breakdown characteristics of bipolar transistors using a two-dimensional model : Hans-Martin Rein. Solid State Electronics19, 145 (1976)

Autoprobe testing for emitter—Collector spikes in microwave bipolar transistors

Direct-current characteristics of microwave bipolar transistors with emitter-collector spikes are examined. Measured data from a large sample of spiked transistors are evaluated and related to the FET model of a spike. A suitable test for spiking is developed for use in a dc autoprobe program. Typical results from a wafer are presented.

Minority-carrier lifetime in dielectrically isolated single-crystal silicon films defined by electrochemical etching

The minority-carrier lifetime has been measured in thin, dielectrically isolated single-crystal silicon films defined by electrochemical etching. Both transient-current measurements on deep-depletion MOS transistors and recombination-current measurements on bipolar junction transistors have been use to determine the lifetime. Values of the order of 1 μ sec have been observed in both n-and p-type films with dopant concentrations of about 10 15 cm −3. It was found that the characteristics of the MOS transistors were not dominated by generation at either surface of the thin film. No differences were seen between the characteristics of bipolar transistors fabricated in the thin films and those of transistors fabricated in bulk control wafers.

A model for d.c. characterization of bipolar transistors

The model described includes: (1) an analytical form for alpha variation for both forward and reverse operation, (2) collector and emitter avalanche multiplication, (3) collector space-charge widening, (4) extrinsic terminal series resistances including current dependency, and (5) temperature effects. Twenty-seven device constants are used for the complete implementation of the model. The number of constants needed decreases with the modelling accuracy desired and with the number of effects to be modelled. A complete set of constants was determined for an experimental epitaxial multi-stripe silicon n—p—n transistor. These constants wore- used in ft computer programme to evaluate terminal volt-ampere properties. Computer results are compared with measured observations. The most significant discrepancies arise 08 a result of inadequate modelling of avalanche multiplication.

Microwave characteristics of ion-implanted bipolar transistors: M. K. Barnoski and D. D. Loper. Solid St. Electron.16 (1973), p. 441

Microwave characteristics of ion-implanted bipolar transistors: M. K. Barnoski and D. D. Loper. Solid St. Electron.16 (1973), p. 441

Microwave characteristics of ion-implanted bipolar transistors

The fabrication and analysis of all ion implanted, epitaxial silicon, n- p- n bipolar microwave transistors is discussed. The dopants used to form the emitter and base regions are ion implanted arsenic and boron, respectively. The arsenic was implanted at 150 keV with 1 × 10 16/cm 2; the boron was implanted at both 50 keV with 8 × 10 13/cm 2 and 20 keV with 4 × 10 13/cm 2. Structures with 2 μm emitter widths and 3 μm emitter-base spacings were fabricated and their S-parameters experimentally determined. The experimental maximum oscillation frequency f max was found to be 6.0 GHz as compared to 6.4 GHz, computed utilizing a T-equivalent circuit and device circuit parameters obtained using known geometry and concentration profiles. A thorough description of the processing sequence used in the fabrication is given.

Study of bipolar transistor avalanche mode characteristics†

Abstract The avalanche modo characteristics of bipolar transistors are considered. A theoretical analysis based on an extension to the Ebers-Moll transistor model is shown to provide satisfactory agreement with various experimental results in the avalanche mode.

A new dielectric isolation technique for bipolar integrated circuits using thin single-crystal silicon films

The fabrication and characteristics of bipolar transistors in thin silicon films formed on insulating substrates by an electrochemical etching process are described, and a new technique for achieving complete dielectric isolation of integrated circuits is discussed.

Statistical nature of impurity-atom diffusion and its influence on the characteristics of narrow-base bipolar transistors

Statistical fluctuations inherent in any diffusion process could place fundamental limitations on the minimum basewidth obtainable in bipolar-transistor fabrication. Calculations are presented to demonstrate the probability of encountering channels of low impurity-atom density (hence reduced punch-through voltage) in a very-narrow-base transistor.

Measurement of the avalanche breakdown characteristics of bipolar transistors†

A transistorized constant current generator suitable for measuring the avalanche mode characteristics of a bipolar transistor has been developed. The generator output current covers the range 0-50 MA, and the current remains constant as the supply voltage is varied from 0.75 v up to several hundreds of volts. The generator may also be used for static characteristic measurements on a wide range of semiconductor devices.

The influence of high current densities on the avalanche breakdown characteristics of bipolar transistors†

This paper is concerned with the effects of large current densities upon the common emitter breakdown characteristics of both epitaxial and alloyed junction transistors, although the arguments may be equally applied to devices fabricated by other techniques. The stability of the active conducting area is considered as well as the interrelation of the three variables, current density, collector voltage and carrier multiplication in the collector depletion region. Results are discussed with relation to observed oscillations between the second breakdown mode and the avalanche mode. The theories of Kirk have been employed in a modified form to obtain general expressions for the movement of depletion layer boundaries under high current conditions. Comparison is drawn between the conflicting hypotheses of Kirk and van der Ziel, and the respective consequences of their theories on high current second breakdown are investigated.

High-performance analogue multiplier based on the characteristics of bipolar transistors

The analogue multiplier described, while having a bandwidth similar to that of the long-tail-pair transconductance multiplier, has considerably better performance as regards nonlinearity, zero stability and dynamic range.