Changes In Electrical Properties Research Articles

Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells

The main goal of this work was to conduct a comparative analysis of the electrical properties of the silicon implanted with neon ions, depending on the dose of ions and the type of substrate doping, for the possibility of generating additional energy levels by ion implantation in terms of improving the efficiency of photovoltaic cells made on its basis. The article presents the results of research on the capacitance and conductance of silicon samples doped with boron and phosphorus, the structure of which was modified in the implantation process with Ne+ ions with energy E = 100 keV and different doses. The analysis of changes in electrical properties recorded at the annealing temperature of the samples Ta = 298 K, 473 K, 598 K, 673 K, and 873 K, concerned the influence of the test temperature in the range from 203 K to 373 K, as well as the frequency f from 100 Hz to 10 MHz, and voltage U from 0.25 V to 2 V. It was possible to detect intermediate bands in the tested samples and determine their position in the band gap by estimating the activation energy value. By means of implantation, it is possible to modify the width of the silicon energy gap, the value of which directly affects the efficiency of the photovoltaic cell made on its basis. By introducing appropriate defects into the silicon crystal lattice, contributing to a change in the value of the energy gap Eg, it is possible to increase the efficiency of the solar cell. On the basis of the obtained results, it can be seen that the highest activation energies are achieved for samples doped with phosphorus.

Study of structural, optical and electrical properties of La3+doped Mg0.25 Ni0.15 Cu0.25 Co0.35 Fe2-x Lax O4 spinel ferrites

Lanthanum substituted Mg–Ni–Cu–Co ferrite nanoparticles prepared through the Sol-Gel method were studied using different methods such as XRD, FTIR, UV-VIS, SEM, Raman, LCR, EDX and IV to evaluate the structural, optical and electrical properties. The single-phase cubic spinel structure of the prepared samples was confirmed from X-ray diffraction analysis. The FT-IR spectra indicated two absorption bands, ν1 and ν2 that represent the complex Fe3+–O2− at A-site (tetrahedral) and B-site (octahedral) vibration. The optical band gap decreased from 2.48eV to 1.53eV observed by UV–Vis, and matched with the electrical resistivity measurements. Variation in the lattice parameters from XRD, the absorption band (octahedral) from FTIR, the optical energy band gap from the UV–vis data and the DC resistivity demonstrated change in structural, optical and electric properties of Mg–Ni–Cu–Co ferrites nanoparticles due to the addition of the rare earth element La3+. Both the dielectric losses and dielectric constant of the prepared samples decreased due to the La3+ ions doping, and A.C conductivity increased with increasing the value of frequency from 8 Hz to 8 M Hz. The variation in Raman peaks reveals that Raman shift varied due to the La3+ addition. EDX data confirmed the stoichiometric calculations of La3+ions substituted into Mg–Ni–Cu–Co ferrite nanoparticles.

The Application of Indirect Impedance to Monitor Corrosion Rates of Inhibitor-Impregnated External Post-Tensioned Tendons

An indirect electrochemical impedance spectroscopy method was previously explored as a potential nondestructive method for detecting corrosion of steel in post-tensioned tendons which are used as reinforcing structural elements in segmental bridge construction. The tendons are composed of a grout-filled cylindrical plastic duct that contains high-strength steel strands. A proof of concept was demonstrated by experiments performed on tendons with passive and corroded strands and through finite-element simulations of the indirect impedance response.1 Further work showed that the indirect impedance method was sensitive to local corrosion in field tendons if the measurement is obtained near the corroding region.2 This work expands the application of the indirect impedance methodto corrosion monitoring of inhibitor-impregnated post-tensioned tendon sections. A corrosion inhibitor that is injected into the tendons through the interstitial space of the strands may be capable of preventing or stopping corrosion. The sensitivity of indirect impedance measurements to changes in both electrical properties of the grout and the corrosion rate of the steel is assessed by comparison to traditional measurements of the impedance in which direct contact is made to the steel. Additionally, further assessment of the indirect impedance method is made by relating the analysis results to the actual corrosion damage obtained by autopsies of the tendon sections. C. L. Alexander and M. E. Orazem. "Indirect Impedance for Corrosion Detection of External Post-tensioned Tendons: 2. Multiple Steel Strands." Corrosion Science 164 (2020): 108330.C. L. Alexander and M. E. Orazem. "Indirect electrochemical impedance spectroscopy for corrosion detection in external post-tensioned tendons: 1. Proof of concept." Corrosion Science164 (2020): 108331.

DEGRADATION OF THE REFLECTANCE PROPERTIES OF SOME GSS IN SPACE, PRELIMINARY RESULTS

A spacecraft in near-Earth orbit isexposed to extreme environmental factors, such as highvacuum, zero gravity, collisions with meteors and orbitaldebris, corpuscular and electromagnetic radiations, etc.These factors result in changing properties of spacecraftsurfaces which leads to changes in mechanical, optical,electrical and physical properties of materials andelements of spacecrafts. This paper presents experimentaldata obtained from ground-based photometricobservations of several geostationary satellites (GSS) builton different types of buses, starting from the beginning oftheir operational lives and during several years after theirlaunches. It has been experimentally proved that spectralreflectance properties of the satellite surface materialsundergo gradual degradation with time of the satellite’sstay in space. Noticeable changes in spectral reflectanceproperties of GSS make it possible to detect damages tothe satellite external payload. Comparison of changes inthe reflective characteristics of different platforms overtime can show the level of technical and scientificprogress of spacecraft designers

Assessment of fracture healing in orthopaedic trauma

Fracture healing is a complex physiologic process, relying on the crucial interplay between biological and mechanical factors. It is generally assessed using imaging modalities, including conventional radiology, CT, MRI and ultrasound (US), based on the fracture and patient features. Although these techniques are routinely used in orthopaedic clinical practice, unfortunately, they do not provide any information about the biomechanical status of the fracture site.Therefore, in recent years, several non-invasive techniques have been proposed to assess bone healing using ultrasonic wave propagation, changes in electrical properties of bones and callus stiffness measurement.Moreover, different research groups are currently developing smart orthopaedic implants (plates, intramedullary nails and external fixators), able to provide information about the fracture healing process. These devices could significantly improve orthopaedic and trauma clinical practice in the future and, at the same time, reduce patients’ exposure to X-rays.This study aims to define the role of traditional imaging techniques and emerging technologies in the assessment of the fracture healing process.

Current-voltage characteristics of iron-implanted silicon based Schottky diodes

Current-voltage (I–V) measurements were carried out on undoped and iron (Fe) doped n-silicon (n-Si) to establish and study a change in electrical properties of the material-based diodes with Fe doping concentration. Fe doping was achieved by implantation at the energy of 160 keV to fluences of 1015, 1016 and 1017 ion/cm2. The obtained results indicated that the diodes were well fabricated and Fe doping resulted in a diode behaviour changing from normal exponential to ohmic I–V behaviour. This ohmic behaviour was explained in terms of Fe-induced defect levels that were positioned at the centre of the energy gap. An I–V ohmic region increased with fluence indicating that the density of defect levels has increased with Fe implantation fluence. A change in diode conduction mechanism domination and parameters with fluence were investigated. The obtained I–V properties of Fe doped Si-based diodes were similar to those of the diodes that were fabricated on radiation-hard materials indicating that Fe, too, is a promising dopant in a quest to improve radiation-hardness of Si to be used in high energy physics experiments.

Comparative Studies of Electrical Resistance in Woven and Non-Woven Jute Fabrics at Different Input Voltage

The use of jute fabrics is showing an increasing trend in textile, building and automobile sectors. Electrical properties such as conductivity, resistance, di-electric constant, insulation, etc. are the essential factor for consideration for using jute fabrics in these sectors. For this reason, a study was carried out to find out the changes in electrical properties of woven and nonwoven jute fabrics at different input voltage. The electrical resistance of jute fabrics was measured by a digital impedance meter. Effects of input voltage, gauge length, and type of fabrics on electrical resistance were studied and analyzed. Experimental results indicated that the electrical resistance of woven and needle punched nonwoven jute fabrics decreased with the increase of input voltage and increased with the increase in gauge length. The highest value of electrical resistance in woven jute fabrics was 394 Mohm/cm at 2 cm gauge length and 60 V of the input voltage. In nonwoven jute fabrics, the maximum electrical resistance was 257 M ohm/cm which was obtained at 2 cm gauge length and 60 V of electrical resistance. Woven jute fabric showed a higher value of resistance than nonwoven jute fabric for different voltages. It was also observed that the electrical resistance varied with the type of fabrics used in this study.

The role of substrate temperature on the performance of humidity sensors manufactured from cerium oxide thin films

Cerium oxide (CeO2) thin films as humidity sensors are obtained by pulsed laser deposition (PLD) grown on Si (100) substrate. CeO2 nanoparticles were taken as target materials for PLD technique. The effect of film deposition condition, such as deposition temperature on performance sensor, was explored. The substrate temperature ranges varied from 300 to 700 °C. The structural and surface morphologies were examined by X-ray diffractometer (XRD) and scanning electronic microscopy (SEM), respectively. The capacitance and resistance of the sensors were tested. The sensor utilizing CeO2 films exhibited high sensitivity, and the increase in humidity led to a gradual increase in sensitivity and decreased resistance. The sensor performance is highly dependent on morphology and surface, which in turn is affected by the change in electrical properties of the film.

Electrical conductivity increase by order of magnitude through controlling sintering to tune hierarchical structure of oxide ceramics

Perovskite calcium manganate CaMnO3-δ is representative of an essential group of semiconductors with unique physical phenomena including colossal magnetoresistance and thermoelectric properties. For the large-scale applications that require the utilization of oxide ceramics, the polycrystalline materials’ physical properties such as conductivity can be controlled and ultimately optimized through tuning the ceramics sintering conditions. In the present study, the impact of the sintering temperature on the structure and thermoelectric performance of CaMnO3-δ is systematically studied. For the ceramics pellets made of precursors powders synthesized using the chemical sol-gel reaction, the increase in the sintering temperature dramatically increases the electrical conductivity by order of magnitude and simultaneously increases the Seebeck coefficient. Meanwhile, the thermal conductivity increases with the rise of the sintering temperature. Among the samples sintered at different temperatures, the peaking thermoelectric Figure of Merit ZT of pristine CaMnO3-δ reached 0.28, which is a factor of 2.5 higher than the highest reported ZT for pristine CaMnO3-δ and approached that of the doped single-phase CaMnO3-δ. The electrical and thermal properties changes were interpreted based on the oxide ceramics hierarchical structure evolutions, from unit cell level to micron scales, induced by changes of sintering temperatures.

Application of Evolutionary Algorithms to Predict Mechanical Properties on Natural Fibers – A Review

Natural fibers are an abundant source in nature, having an inherent property in which include biodegradable, decomposable and cost efficient. Moreover, they exhibit extensive mechanical properties such as tensile modulus, flexural modulus than synthetic fibers when reinforcing polymer resins. However, adding inappropriate levels of quantity of resins misleads on obtaining desired mechanical properties. Several approaches have been utilized in the past decades to get desired mechanical properties on the natural fibers, in which applying evolutionary algorithms are the most recent and familiar in the composite research community. Therefore, in this study an application of evolutionary algorithms on natural fibers are presented. This objective of the review is to provide detailed information of the natural fibers along with its recent algorithmic approaches. Moreover, the effect of various treatments and its changes in mechanical, thermal and electrical properties of matrix.

Perovskite Oxides Tunable by Electromechanical and Electrothermal Couplings

Objectives: Oxides hold the great promise for emerging electronic applications (other than conventional CMOS components such as gate oxides) because they can significantly increase the operational range of temperature and bias voltage due to the much higher bandgap energy than semiconductors. However, using the oxides for such novel purposes requires their electronic properties to be properly tuned and tailored to specific device applications. Therefore, this work seeks to develop the way to address this challenge by focusing on the tunable characteristics of perovskite oxides driven by their unique electromechanical and electrothermal couplings. Among various types of oxides, crystalline perovskite titanate structures such as STO (SrTiO3) have been chosen as the representative material platform in this study, due to their multifunctional properties and well-established growth techniques. New Results: Previously, researchers have demonstrated the heat-induced tunable electrical characteristics of STO doped with various impurities [1-2]. Due to the complex chemistry where both the thermal and doping effects contribute to the observed change in electrical properties, accurate physical origin of the STO’s tunable behavior has not been clearly identified. In this work, we focused on an undoped, 1 mm-thick STO crystal to quantitatively measure its response when solely exposed to an external stimulus such as mechanical pressure.Fig. 1 depicts the C-AFM (conductive atomic force microscope) experimental setup to study the tunable behavior of STO driven by an electromechanical coupling. The commercially available conductive tip (Asyelec.01-R2) was used to apply a bias voltage (Vbias = 2V) while in contact with the top surface of the STO sample. This enables simultaneous measurement of electrical response during the experiment. The force was applied and varied by changing the set-point voltage (Vsetpoint, kept below 3V to prevent any possible damage to the measurement system) that is used to make the cantilever tip bent with the varying height. Conversion from the control parameter (Vsetpoint) to the mechanical pressure (N/m2) was conducted through precise calibration of the C-AFM measurement setup, including spring constant (0.92 N/m) and deflection sensitivity (0.0576 mm/V) (Table 1).Fig. 2 shows the measured electrical conductivity vs. applied pressure plot for the undoped STO sample used in the experiment. To ensure statistically meaningful data, each experiment was performed repetitively (at least 10 times) and both the mean (data points) and standard deviation (error bars) values were presented in the figure. A clear trend of increase in electrical conductivity with increasing pressure was observed, which is best attributed to creation of oxygen vacancies by mechanical stress in STO [3]. This will surely help researchers study the fundamental electromechanical coupling-driven behavior of perovskite oxide thin films. Fig. 3 further presents the C-AFM image when pressure was applied to the STO surface (the white particles are believed to be due to pile-up of electronic charges upon the application of localized electrical bias).We next studied the electrothermal coupling-driven conductance change in STO by performing a systematic study of thermal annealing (at temperatures ranging from 200°C to 800°C and in dry air). For this study, a sufficient amount of oxygen vacancies was purposely introduced when the STO thin film was prepared (see Fig. 4 for the device schematic). Because subsequent annealing annihilated oxygen vacancies, decrease in electrical conductivity was observed in STO samples annealed at high temperatures (Fig. 5). The reasoning of relating the observed trend in Fig. 5 to the change in the number of oxygen vacancies upon thermal annealing is well supported by measuring the hysteretic behavior of the STO thin film. Fig. 6 shows a measured butterfly curve that is typical for memristor devices where removal and restoration of oxygen vacancies play a key role as the switching mechanism. Significance: This work is of significant importance for the development of future electronic devices with significantly enhanced reliability features. By demonstrating that electrical characteristics of multifunctional oxide thin films can be largely tuned by external stimuli such as mechanical pressure and thermal annealing, it will spark various research initiatives in using the oxide for novel, more versatile applications.

Phase-change regulation criterion based on size-dependent lattice distortion rate and born theory for VO2 nanomaterials

Vanadium dioxide (VO2) is a promising thermally induced phase transition material because of the abrupt changes in electrical and optical properties. However, the high phase transition temperature of VO2 and its unspecified modulation relationship need to be resolved urgently. Herein, we proposed a simple and precise regulation criterion for VO2 materials based on size-dependent lattice distortion rate and Born theory. The results indicated that the application of a tensile stress changed the elastic properties of the VO2, which promoted VO2 phase transition, and regulated the phase transition temperature. Moreover, the specific modulation relationship between the stress and phase transition temperature of VO2 was confirmed experimentally. These results show that our criterion provides theoretical guidance to regulate VO2 thermally induced phase transition materials.

About electrical resistivity variation during drying and improvement of the sensing behavior of carbon fiber-reinforced smart concrete

The addition of conductive fibers to a cementitious material reduces its electrical impedance, for monitoring purposes, based on the relationship between external stresses (mechanical or thermal) and changes in electrical properties. In this context, variations in the electrical properties due to drying prevent the application of this technique, unless such variations are negligible or precisely predictable. The aim of this paper, therefore, is to study the variation of the complex electrical impedance during drying, for measurement frequencies between 4 Hz and 1 MHz. Shrinkage, weight loss and electrical impedance spectrum were measured on three mortars with carbon fiber volume fractions (FVF) of 0, 0.1 and 0.5%. The results show that in the absence of conductive fibers, the real and imaginary parts of the impedance increase due to water loss. On the other hand, in the presence of a percolated carbon fiber network, the real impedance of the material decreases at low frequencies and increases at high frequencies during drying; for intermediate frequency ranges, quasi-constant values can be observed. In addition, as the material dries, the capacitive behavior of the material wanes, and the imaginary impedance values tend towards 0. The electrical behavior then approaches ideal resistive behavior with a real impedance value independent of the measurement frequency. Blind frequencies have been identified for fibrous mortars around 1 kHz and 40 kHz for 0.1% and 0.5% FVF, respectively. For monitoring purposes, coupling the presence of fibers with an appropriate measurement frequency would minimize the effects related to the variation of impedance as a function of time – i.e., allowing more precise monitoring of mechanical loads with time.

In Situ Transmission Electron Microscopy Study of Conductive Filament Formation in Copper Oxides

The structural and electrical property changes of two types of copper oxides (CuO and Cu2O) under voltage bias are studied with in situ transmission electron microscopy (TEM). The phases of different materials are confirmed with electron diffraction. In both types of oxides, dynamic conductive path formation and dissolution are observed. The decrease in resistance of CuO film is found to be accompanied with the formation of Cu4O3 phase where the electric field strength is highest. We also find that the decrease in resistivity of Cu2O film is more extensive and occurs in an area depending on the level of current compliance. The physical mechanisms responsible for the observations and their implications for the formation of conducting regions in copper oxide-based memristors are discussed.

Fabrication of MSM-Based Biosensing Device for Assessing Dynamic Behavior of Adherent Mammalian Cells

Adherent mammalian cells are susceptible to the physiological conditions, i.e., physicochemical and topological properties of the extracellular microenvironment surrounding them. In this paper, cell-substrate interaction is taken as the primary step for exhibiting their optimal functions, including cell adhesion, proliferation, migration, and differentiation. Herein, the change in characteristic properties of transparent semiconducting metal oxide, ZnO thin film as a function of the progression of cellular processes and functions resulting from cell-substrate and cell-cell interactions is reported. We have monitored the change in characteristic electrical properties of ZnO thin film by a fabricated metal-semiconductor-metal (MSM) structure based biosensing platform. Further, we have demonstrated the improvement in cell adhesion on ZnO thin films through the gelatin functionalization process. Furthermore, the Nyquist plot characteristics are used to investigate the electrical properties of the fabricated MSM biosensor, which gets altered with the progression of cellular functions over time. Correspondingly, it is also observed that the true impedance of the fabricated device gets increased with a noticeable shift towards the higher resistance region with a significant increase in the semi-circle diameter. Hence, we anticipate that the fabricated MSM based biosensing platform can be used as a promising device for monitoring the functional behavior of adherent cells.

The Change of Electrical Properties of Blood Corpuscles under in vitro Mechanical Stress

Changes in the electrical properties of blood corpuscles that are experiencing mechanical stress modeled in vitro have been studied. An increase in the concentration of ATP molecules in the intercellular space in response to the mechanical effect of moving plasma layers both in the blood of healthy people and patients with acute lymphoblastic leukemia is demonstrated. The surface potential of red blood cells and platelets becomes more positive both in the blood of healthy people and in leukemia patients. In contrast, the negative charge of lymphocytes in healthy people decreases in response to mechanical stress but increases in the blood of patients with acute lymphoblastic leukemia.

Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film

Vanadium dioxide (VO2), due to its electrically induced metal-to-insulator transition with dramatic changes in electrical and optical properties, is considered to be a powerful material for electro-optical devices. However, there are still some controversies about phase transition mechanism under voltage. Here, based on optical characterizations on VO2 crystal nanofilm during the whole process of phase transition, temporal evolution and spatial distribution of changes in electricity, optic and temperature are investigated simultaneously, to explore the mechanism. The variations of Raman spectrum and reflected spectrum, and changes in current and temperature are evidences for occurrence of phase transition, which exhibit different changing behaviors with time and space. These results offer a better understanding of the phase transition mechanism, implying that lattice structure of VO2 changes gradually after applying voltage until the structure is completely converted to metallic structure, which causes a rapid increase in carrier density, resulting in a rapid change in current, reflected spectrum and temperature. Temperature rise before phase transition and applied electric field alone are not enough for triggering metal-insulator transition, but these two factors can act synergistically on structural transformation to induce phase transition.

Neutron irradiation and forming gas anneal impact on β-Ga2O3 deep level defects

We used depth-resolved cathodoluminescence spectroscopy (DRCLS), absorption spectroscopy, and temperature-dependent Hall effect (TDH) measurements to study the effects of fluence dependent neutron irradiations on deep level defects and the associated changes of electrical properties of β-Ga2O3 grown by low pressure chemical vapor deposition and pulsed laser deposition. DRCLS enabled us to monitor systematic increases of three deep level defects after neutron irradiation which correlated with TDH measurements of significant free carrier removal and mobility decrease. The correlations between defect profiles and electrical property changes vs. irradiation dose link these dominant electrically active native point defects in Ga2O3 with their contributions to free carrier mobility, carrier density, and donor/acceptor depth profiles, further revealing their donor/acceptor electrical behavior and physical nature, consistent with the formation of compensating defects. After irradiation, temperature-dependent forming gas (FG) anneals were performed to reverse the radiation-induced damage and carrier removal. The evolution of defect concentrations with increasing neutron dose and their depth-resolved distributions with FG anneal temperature reveal an interplay between specific defects to control electronic properties.

Topotactic phase transformations by concerted dual-ion migration of B-site cation and oxygen in multivalent cobaltite La–Sr–Co–Ox films

Manipulating topotactic phase transformations via orderly ion transfer in complex oxides ABO x is ubiquitous in advanced applications such as ionotronics, ion-batteries and catalysts. Most of such ion-mediated transformations are accomplished by the transfer of oxygen or A-site ions. However, implementing the transformation via the transfer of B-site ions, despite the great challenge to overcome a large cohesive energy, has unique advantage since they host most functional properties of materials. Here, we present a tri-state phase transformation from perovskite (P) to brownmillerite (BM) and to single-layered perovskite (SL) structure via the concerted migration of oxygen and B-site Co-ions in La 0.7 Sr 0.3 CoO 3 thin films. Ac-STEM, XPS, XAS, PNR, magnetic and electric measurements demonstrated that presented B-site Co-cation transfer is along the CoO 4 tetrahedral sub-layer of the BM film, which leads to the reconfiguration of 3 d -electrons and spin state in remanent Co ions and causes tremendous changes in magnetic and electric properties: from canted-antiferromagnetic insulator in BM phase to ferromagnetic insulator in SL phase. First-principles calculations revealed that the La 3+ -doping at A-site largely reduces the cohesive energy of Co-ions in CoO 4 and destabilize the CoO 4 tetrahedron of BM phase, which explains the formation of Co-ions transfer channel in the CoO 4 tetrahedral sub-layer. The present study highlights the effectiveness of regulating topotactic transformation via B-site ions transfer and provides a new pathway for manipulating the topotactic transformation with diverse functionalities. Tri-state topotactic transformation induced by B-site Co ion transfer was firstly realized in La 0.7 Sr 0.3 CoO 3 film. A unique transfer channel for Co-ions is demonstrated to be facilitated by the instability of CoO 4 due to A-site La-doping. The reconfiguration of 3d-electrons due to Co transfer leads to tremendous changes in magnetic and electric properties. Such new topotactic transformation driven by B-site ion transfer offers opportunity to exploit new types of electrocatalyst with rich functionalities. • Tri-state topotactic transformation induced by B-site Co ion transfer was firstly realized in La 0.7 Sr 0.3 CoO 3 film. • A unique transfer channel for Co-ions is demonstrated to be facilitated by the instability of CoO 4 due to A-site La-doping. • The concerted transfer of Co and O ions drive tremendous changes in magnetic and electric properties. • Such B-site ion transfer provides a new pathway for exploiting electrocatalyst with diverse functionalities.

Investigation of Optical and Electrical Properties of Different Compositions of As-S-Se Thin Films at Thickness 725 nm With High Precision Using a Wedge-Shaped Optical Model

Different compositions of as-obtained As40S60-xSex thin films (x = 0 at.%, 20 at.%, 40 at.%, and 60 at.%) with fixed thicknesses were deposited by a thermal evaporation technique. Inheterogeneities of thin-film thickness is a problem that includes significant errors of optical calculations unless there is an optical model that prevents these errors, and the consequent gross errors, in the measurement of optical constants. If not taken into account, this may lead to rather large calculated values for the absorption coefficient or the incorrect presence of the absorption-band tail, as well as to significant errors in the calculated values of the refractive index and film thickness. The optical properties of As40S60-xSex thin films have been determined utilizing measurements of the optical transmission spectra. Owing to the shrinking of the transmission spectra in both the medium and strong absorption regions, we have resorted to applying the optical wedge model for the determination of the film thickness with high precision that equals approximately 725 nm. This paper therefore presents formulae for the transmittance spectrum of a thin dielectric film of selected thickness covering a thick, non-absorbing substrate as well as its upper and lower envelopes. The effect of the content variation on the interference fringes of the transmittance spectrum is analyzed in detail. The electrical properties of the As40S60-xSex thin films have been studied in terms of measuring the temperature-dependent AC conductivity. Both the dielectric constants and dielectric modulus were investigated and are discussed for applications in optoelectronic devices. The change in electrical properties of As40S60-xSex thin films has been interpreted in terms of changed morphological and structural properties. The ratios of the elements were analyzed by comparing them with the actual weight ratios of the bulk material using EDX technology, in addition to the assessment of the Amorphic structure and composition characteristics of the films examined by the x-ray and scanning electron microscopy.