The structure and properties of polycrystalline chemical vapor deposition (CVD) diamond coatings grown by microwave plasma CVD in H2–CH4 mixtures can be effectively controlled by nitrogen admixture in the process gas. Here, a comparative study of adding nitrogen from different precursors, N2 and ammonia NH3, in concentrations up to 0.4%vol on grain size, texture, surface roughness, and sp2/sp3 ratio of the produced films on Si substrates is performed. A transition from microcrystalline to smooth nanocrystalline diamond structure is found to occur at a certain concentration of the precursor, for NH3 this threshold concentration being much lower, 0.02–0.1%, than for N2. The higher activity of ammonia is associated with easier formation of cyano radicals in the plasma as detected with optical emission spectroscopy, in accord with the lower bond‐dissociation energy for NH3 compared to N2. On the contrary, a smaller addition (0.004%) of either N2 or NH3 promotes almost doubling of the growth rate, while preserving the microcrystalline structure of the film. The results establish ammonia as a convenient alternative precursor to commonly used N2 added in the plasma for the diamond film structure modifications.