C-BiCMOS Technology Research Articles

Dual-DFE read/write channel IC for hard-disk drives

The channel IC described here achieves data rates of 380 Mb/s at performance levels that improve in various directions upon the state of the art. It accomplishes these feats in a mature 1 /spl mu/m CBiCMOS technology at a readmode power consumption of only 800 mW. The paper discusses some of the underlying architectural concepts.

On the effects of hydrogen in p-n-p transistors under forward current stress in a C-BiCMOS technology

Boron-doped polysilicon emitter p-n-p transistors show current gain ( beta ) increase after forward current stress and recovery by subsequent low-temperature annealing. The results of isothermal and isochronal annealing suggest that the dissociation of boron-hydrogen pairs is responsible for recovery from the beta increase. Current stress indicates that atomic hydrogen transported to the poly/monosilicon interface and polysilicon grain boundaries by electromigration pairs with boron dopants, thereby reducing surface recombination velocity and increasing beta . >