Cathodoluminescence Spectroscopy Research Articles

Оптические и люминесцентные свойства керамик MgAl-=SUB=-2-=/SUB=-O-=SUB=-4-=/SUB=-, активированных ионами Eu в высокой концентрации

The series of MgAl2O4 ceramics doped with high level of europium oxide (Eu2O3) up to 15 wt.% was fabricated by the Spark Plasma Sintering technique. The prepared ceramics have been tested using the various experimental techniques: X-ray diffraction, scanning electron microscopy, as well as optical and cathodoluminescence spectroscopy. The influence of europium oxide on the complex of optical and luminescent characteristics of MgAl2O4:Eu ceramics is discussed. The nature of the luminescence centers and the luminescence decay parameters are considered in detail.

Chirality and dislocation effects in single nanostructures probed by whispering gallery modes.

Nanostructures such as nanoribbons and -wires are of interest as components for building integrated photonic systems, especially if their basic functionality as dielectric waveguides can be extended by chiroptical phenomena or modifications of their optoelectronic properties by extended defects, such as dislocations. However, conventional optical measurements typically require monodisperse (and chiral) ensembles, and identifying emerging chiral optical activity or dislocation effects in single nanostructures has remained an unmet challenge. Here we show that whispering gallery modes can probe chirality and dislocation effects in single nanowires. Wires of the van der Waals semiconductor germanium(II) sulfide (GeS), obtained by vapor-liquid-solid growth, invariably form as growth spirals around a single screw dislocation that gives rise to a chiral structure and can modify the electronic properties. Cathodoluminescence spectroscopy on single tapered GeS nanowires containing joined dislocated and defect-free segments, augmented by numerical simulations and ab-initio calculations, identifies chiral whispering gallery modes as well as a pronounced modulation of the electronic structure attributed to the screw dislocation. Our results establish chiral light-matter interactions and dislocation-induced electronic modifications in single nanostructures, paving the way for their application in multifunctional photonic architectures.

High-throughput dry transfer and excitonic properties of twisted bilayers based on CVD-grown transition metal dichalcogenides.

van der Waals (vdW) layered materials have attracted much attention because their physical properties can be controlled by varying the twist angle and layer composition. However, such twisted vdW assemblies are often prepared using mechanically exfoliated monolayer flakes with unintended shapes through a time-consuming search for such materials. Here, we report the rapid and dry fabrication of twisted multilayers using chemical vapor deposition (CVD) grown transition metal chalcogenide (TMDC) monolayers. By improving the adhesion of an acrylic resin stamp to the monolayers, the single crystals of various TMDC monolayers with desired grain size and density on a SiO2/Si substrate can be efficiently picked up. The present dry transfer process demonstrates the one-step fabrication of more than 100 twisted bilayers and the sequential stacking of a twisted 10-layer MoS2 single crystal. Furthermore, we also fabricated hBN-encapsulated TMDC monolayers and various twisted bilayers including MoSe2/MoS2, MoSe2/WSe2, and MoSe2/WS2. The interlayer interaction and quality of dry-transferred, CVD-grown TMDCs were characterized by using photoluminescence (PL), cathodoluminescence (CL) spectroscopy, and cross-sectional electron microscopy. The prominent PL peaks of interlayer excitons can be observed for MoSe2/MoS2 and MoSe2/WSe2 with small twist angles at room temperature. We also found that the optical spectra were locally modulated due to nanosized bubbles, which are formed by the presence of interface carbon impurities. The present findings indicate the widely applicable potential of the present method and enable an efficient search of the emergent optical and electrical properties of TMDC-based vdW heterostructures.

Porosity Evolution and Microfacies Analysis of the Khurmala Formation (Paleocene-Early Eocene) from Selected Sections in Kurdistan Region, Northern Iraq Revealed by Cathodoluminescence Spectroscopy

The microfacies analysis and porosity evolution of the Khurmala Formation (Paleocene-Early Eocene) were studied in the Gomaspan and Sheraswar sections in the High Folded Zone, northeastern Erbil City, Kurdistan Region (N-Iraq). Lithologically, the Khurmala Formation in the Gomaspan section is about 23.5 m comprised of thick to massive bedded brecciated grey dolomitic limestone in lower and middle parts and interbedding of medium to thick beds of grey dolomitic limestone and yellow calcareous shale in the upper part. The Sheraswar section comprises 18.5 m yellow marl, thick yellowish-grey dolomitic marly limestone in the lower part, and bedded grey limestone interbedded with thin blue marl, shale, and mudstone in the upper part. The petrographic and cathodoluminescence (CL) studies of 20 thin sections of the Khurmala carbonates show that most skeletal grains are shallow marine derivative faunas and non-skeletal grains represent intraclasts, peloids, ooids, and extraclasts (monocrystalline quartz). Five main microfacies were identified in the studied rocks, and they integrated into two facies associations relating to their environmental interpretation: back reef/lagoon and patch reef. A new eight pore types were distinguished in the carbonate rocks of Khurmala Formation: interparticle, intraparticle, growth framework, intercrystalline, moldic, vuggy, fracture, and stylolite porosities. Most of the primary porosity was reduced by compaction and cementation due to effect of intensive diagenesis. Secondary porosity is predominant in both studied sections, the most common being the moldic porosity associated with different microfacies fabrics. CL investigations revealed that dolomitized lime wackestone microfacies has two types of different cementations in the late stages of blocky calcite cement which are discontinuous light to dull orange luminescence without zoning, and pure calcite cement of coarse to very coarse blocky calcite cement with characteristic bright orange luminescence and tight zoning.

Cathodoluminescence Spectroscopy of Complex Dendritic Au Architectures for Application in Plasmon‐Mediated Photocatalysis and as SERS Substrates

AbstractComplex 3D metallic nanostructures with large surface areas and broadband absorption are attractive candidates for efficient photocatalysis and spectroscopy. Here, hierarchical Au dendrites are self‐assembled over centimeter‐scales by electrodeposition and the plasmon modes are locally mapped using cathodoluminescence spectroscopy. A correlation between the spatial and spectral distribution of the plasmonic “hot‐spots” and the morphology of these structures are demonstrated. Electrodynamic simulations show that the spectra of the plasmon modes are determined by the local geometry of sharp features. Their performance as both surface‐enhanced Raman scattering (SERS) substrates and as photocatalysts for the N‐demethylation reaction of methylene blue is investigated. High hot‐spot densities result in larger SERS enhancement, while the sample with the lowest hot‐spot density has a reaction yield 136% larger than the sample with the highest density. These findings indicate that maximizing the hot‐spot density is not sufficient to optimize plasmonic substrates for all applications. The spectral and spatial distribution of the plasmon resonances will modify the hot electron generation efficiency and need to be considered for plasmon‐enhanced photocatalysis. This work extends the understanding of light–matter interactions in complex 3D structures and provides direction for the rational design of plasmonic architectures for different applications.

Cathodoluminescence and optical absorption spectroscopy of plasmonic modes in chromium micro-rods

Manipulating light at the sub-wavelength level is a crucial feature of surface plasmon resonance (SPR) properties for a wide range of nanostructures. Noble metals like Au and Ag are most commonly used as SPR materials. Significant attention is being devoted to identify and develop non-noble metal plasmonic materials whose optical properties can be reconfigured for plasmonic response by structural phase changes. Chromium (Cr) which supports plasmon resonance, is a transition metal with shiny finished, highly non-corrosive, and bio-compatible alloys, making it an alternative plasmonic material. We have synthesized Cr micro-rods from a bi-layer of Cr/Au thin films, which evolves from face centered cubic to hexagonal close packed (HCP) phase by thermal activation in a forming gas ambient. We employed optical absorption spectroscopy and cathodoluminescence (CL) imaging spectroscopy to observe the plasmonic modes from the Cr micro-rod. The origin of three emission bands that spread over the UV–Vis-IR energy range is established theoretically by considering the critical points of the second-order derivative of the macroscopic dielectric function obtained from density functional theory (DFT) matches with interband/intraband transition of electrons observed in density of states versus energy graph. The experimentally observed CL emission peaks closely match the s–d and d–d band transition obtained from DFT calculations. Our findings on plasmonic modes in Cr(HCP) phase can expand the range of plasmonic material beyond noble metal with tunable plasmonic emissions for plasmonic-based optical technology.

Enhancement of excitonic and defect-related luminescence in neutron transmutation doped β−Ga2O3

Neutron irradiation analysis, inductively coupled plasma mass spectrometry (ICPMS), and cathodoluminescence (CL) spectroscopy are used to investigate the influence of transmuted Ge incorporation on the luminescence properties of $\ensuremath{\beta}\text{\ensuremath{-}}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ single crystals. Calculations based on ${\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$-neutron interaction reveal temporal variations of both Ge and Zn concentrations as a function of time during and after neutron irradiation. To produce a concentration of $5\ifmmode\times\else\texttimes\fi{}{10}^{18}\phantom{\rule{0.16em}{0ex}}\mathrm{Ge}\phantom{\rule{0.16em}{0ex}}\mathrm{donors}/\mathrm{c}{\mathrm{m}}^{3}$ from the neutron transmutation of Ga, the $\ensuremath{\beta}\text{\ensuremath{-}}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ crystal was irradiated for 27 h, which was accompanied by the incorporation of ${10}^{16}\phantom{\rule{0.16em}{0ex}}\mathrm{Zn}\phantom{\rule{0.16em}{0ex}}\mathrm{acceptors}/\mathrm{c}{\mathrm{m}}^{3}$. These calculated dopant concentrations are confirmed by ICPMS. The $\ensuremath{\beta}\text{\ensuremath{-}}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ crystals exhibit a UV band at 3.40 eV due to self-trapped holes (STHs) and two blue donor-acceptor pair (DAP) peaks at 3.14 eV (BL1) and 2.92 eV (BL2). In addition to the neutron-induced incorporation of substitutional Ge donors and Zn acceptors on Ga sites, Ga vacancies (${V}_{\mathrm{Ga}}$) were created by high-energy neutrons in the flux, which strongly enhanced the BL1 peak. The ${V}_{\mathrm{Ga}}$ acceptors compensate the neutron-induced Ge donors, making the ${\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ crystal highly resistive. Concurrent temperature-resolved CL measurements of the $\ensuremath{\beta}\text{\ensuremath{-}}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ before and after neutron irradiation reveal a twofold increase in both the STH and BL1 peaks. This result suggests that STHs are preferentially localized at an O site adjacent to ${V}_{\mathrm{Ga}}$, as theoretically predicted by Kananen et al. [Appl. Phys. Lett. 110, 202104 (2017).]. Analysis of the ${\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ CL temperature dependence reveals that the UV and BL1 bands after the neutron irradiation exhibit an equivalent activation energy of $100\ifmmode\pm\else\textpm\fi{}10\phantom{\rule{0.16em}{0ex}}\mathrm{meV}$ due to the presence of a neutron-induced defect that acts as an efficient competitive nonradiative recombination channel. The results also provide evidence that the BL1 and BL2 bands arise from different DAP pairs.

Optical study of Ga2-xSnxO3 (0 ≤ x ≤ 0.7) thin films using spectroscopic ellipsometry and cathodoluminescence

Diagnosis of the semiconductor defect levels is essential for their device applications. The optical and electrical properties of Ga2-xSnxO3 (GTO, 0 ≤ x ≤ 0.7) films were investigated to look into the defect levels. Amorphous GTO thin films were grown on Si substrates with various Sn contents via radio frequency magnetron sputtering deposition. Thermal annealing at 900 °C for two hours was performed after the deposition of films at 500 °C to achieve the polycrystalline phase. We examined the physical properties of amorphous β-Ga2O3 thin films grown using various O2 gas flows during growth, and of the post-annealed GTO films. Using spectroscopic ellipsometry, the optical constants in the spectral range between 1.0 and 6.0 eV were determined. We estimated the optical gap energy of the GTO layers using the Tauc method. The optical gap energy was approximately 4.9 eV for amorphous β-Ga2O3 films. Optical structures owing to defects were found below optical gap energy in the spectra of the complex refractive index. Using cathodoluminescence (CL) spectroscopy, there were several peaks discovered in the range between 1.5 and 3.0 eV. The CL peaks correspond to transitions between valence (conduction band) and defect-induced gap states. We identified the 1.5 − 1.6 eV peak as the transition between defect states and the conduction band. The extinction coefficient (k) peak became sharper at 5.3 eV suggesting a strong excitonic behavior at the fundamental gap for amorphous Ga2O3 films.

Cathodoluminescence Spectroscopy in Graded InxGa1-xN.

InGaN materials are widely used in optoelectronic devices due to their excellent optical properties. Since the emission wavelength of the full-composition-graded InxGa1-xN films perfectly matches the solar spectrum, providing a full-spectrum response, this makes them suitable for the manufacturing of high-efficiency optoelectronic devices. It is extremely important to study the optical properties of materials, but there are very few studies of the luminescence of full-composition-graded InxGa1-xN ternary alloy. In this work, the optical properties of full-composition-graded InxGa1-xN films are studied by cathodoluminescence (CL). The CL spectra with multiple luminescence peaks in the range of 365-1000 nm were acquired in the cross-sectional and plan-view directions. The CL spectroscopy studies were carried out inside and outside of microplates formed under the indium droplets on the InGaN surface, which found that the intensity of the light emission peaks inside and outside of microplates differed significantly. Additionally, the paired defects structure is studied by using the spectroscopic method. A detailed CL spectroscopy study paves the way for the growth and device optimization of high-quality, full-composition-graded InxGa1-xN ternary alloy materials.

Germanium Diselenide Ribbons with Orthorhombic Crystal Structure.

Many materials are known to exist in several stable polymorphs, but synthesis only provides access to a subset. This situation is exemplified by the dichalcogenide semiconductor GeSe2. Besides the amorphous form, which attracted intense interest, crystalline GeSe2 in the bulk and in nanostructures such as flakes and nanobelts invariably adopts the 2D/layered monoclinic β-phase. Hence, the properties of other polymorphs such as the orthorhombic 3D GeSe2 phase remain unknown. Here, we report the high-yield synthesis of orthorhombic GeSe2 nanoribbons by GeSe/Se vapor transport over Au catalysts. Access to air-stable monocrystalline, single-phase ribbons enabled investigating the properties of orthorhombic GeSe2 including its characteristic Raman spectrum. Optical absorption on ensembles and cathodoluminescence spectroscopy on individual ribbons show a wide bandgap and intense band-to-band emission in the visible, with a broad sub-bandgap emission tail. Our results establish orthorhombic GeSe2 ribbons as a promising wide-bandgap semiconductor nanostructure for applications in optoelectronics and energy conversion.

Structural and Luminescent Peculiarities of Spark Plasma Sintered Transparent MgAl2O4 Spinel Ceramics Doped with Cerium Ions

In the present study, the concentration series of MgAl2O4:Ce3+ ceramics have been fabricated by the Spark Plasma Sintering (SPS) method. Cerium-doping concentration was varied within a range of 0.1–5 wt.%. The prepared ceramics have been tested using the various experimental techniques: X-ray diffraction (XRD), scanning electron microscopy, as well as optical and cathodoluminescence spectroscopy. According to XRD, all synthesized samples are biphasic with structural impurities. The cerium ion concentration effect on the cathodoluminescent characteristics of MgAl2O4:Ce3+ ceramics has been studied in terms of emission intensity and decay time. Before annealing the concentration, quenching is observed. The optimal doping Ce3+ concentration was determined to be 5 wt.% after temperature annealing at 1300 °C. The successfully prepared spinel ceramics could be potentially applying for high-energy electrons detection.

Colloidal Nanoribbons: From Infrared to Visible

Using the cation-exchange method, colloidal PbS nanoribbons are converted completely into CdS nanoribbons. This process expands the emission spectrum of the nanoribbons from infrared to visible. The morphology of nanoribbons remains the same after cation exchange, but the crystal structure changes from rock salt to zincblende. CdS nanoribbons exhibit blue band-edge photoluminescence under ultraviolet-light excitation. Cathodoluminescence spectroscopy of the CdS nanoribbons shows multicolor (blue, green, and red) emissions. Further time-resolved photoluminescence spectroscopy studies show that the lifetime of the midgap states is more than 2 orders of magnitude longer than that of the band-edge states.

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties are evaluated by atomic force microscopy (AFM), secondary-ion mass spectrometry (SIMS), micro-Raman spectroscopy, cathodoluminescence (CL), and deep-level transient Fourier spectroscopy (DLTFS). The GaN SBDs exhibit near-unity ideality factor (n = 1.1), promising Schottky barrier height (SBH) of ΦB = 0.82 eV, low turn-on voltage ∼0.56 V, leakage current density of JR < 5.5 × 10−6 Acm−2 at −100 V, breakdown voltage VBR < −200 V, and less interface state density (NSS < 5 × 1012 eV−1 cm−2) at the Ni/GaN Schottky contact. The forward and reverse current transport mechanisms of the SBD are identified by fitting analysis of measured J-V. Weak temperature dependence of ΦB and n is detected from I–V-T measurements. Similar traps at EC - 0.18 eV and EC - 0.56 are identified in the various SBDs from DLTFS, signifying that these traps are omnipresent defects in the epilayer.

Atomic-scale and optical investigation of nanostructured Er disilicates in silica

The optical and structural properties of Er-doped Silicon oxide based thin films elaborated by RF magnetron sputtering were investigated as a function of annealing treatment. Atom Probe Tomography and Transmission electron microscopy were used to analyze the position of rare-earth ions as well as the phase separation occurring in the layer in order to provide a complete picture of the nanostructure. The emission properties of Er3+ ions were investigated using cathodoluminescence (CL) spectroscopy. The high doping level of Er ions in silicon oxide matrix leads to a phase decomposition of pure SiO2 and Er2Si2O7 phases with a nanostructure which is influenced by the annealing treatment. It results on different emission intensities in ultraviolet or infrared ranges. The relationship between the nanostructuration observed and the optical properties is discussed in regards of annealing treatment.

Growth Story of One Diamond: A Window to the Lithospheric Mantle

A diamond plate cut out of a transparent, colorless octahedral diamond crystal of gem quality, with a small chromite inclusion in the core, sampled from the XXIII CPSU Congress kimberlite (Yakutia, Mirny kimberlite field, vicinities of Mirny city), has been studied by several combined methods: absorption spectroscopy at different wavelengths (UV-visible, near- and mid-IR); photoluminescence, cathodoluminescence, and Raman spectroscopy (local version) and lattice strain mapping; birefringence in cross-polarized light; and etching. The diamond plate demonstrates a complex growth history consisting of four stages: nucleation and growth to an octahedron → habit change to a cuboid → habit change to octahedron-1 → habit change to octahedron-2. The growth history of the diamond records changes in the crystallization conditions at each stage. The revealed heterogeneity of the crystal structure is associated with the distribution and speciation of nitrogen defects. The results of this study have implications for the information value of different techniques as to the diamond structure defects, as well as for the as yet poorly known evolution of the subcontinental lithospheric mantle in the Siberian craton, recorded in the multistage growth of the diamond crystal. At the time of writing, reconstructing the conditions for each stage is difficult. Meanwhile, finding ways for such reconstruction is indispensable for a better understanding of diamond genesis, and details of the lithosphere history.

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

We report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar regrowth processes limit diode performance via the introduction of unintentional dopants and defect states. p-GaN was selectively regrown in n-GaN trenches with SiO2 masks of variable mask-to-trench-width ratio. Dilute Al layers were periodically introduced during regrowth as markers of the growth interface. Correlated nanoscale mapping of doping, conductivity, and dopant complexes was achieved with atom probe tomography (APT), scanning spreading resistance microscopy (SSRM), and cathodoluminescence (CL) spectroscopy, respectively. The Al marker layers, detected by APT, enabled reconstruction of the faceted growth interface and correlation of the dopant concentration with position and time. The p-GaN growth rate is proportional to the mask-to-trench width ratio while the dopant incorporation rate is invariant. At trench edges, magnesium incorporation is suppressed, and oxygen incorporation enhanced, due to preferential incorporation on the semi-polar growth surface, leading to compensation and less abrupt p-n junctions; the SiO2 mask is a source of oxygen. Residual etch damage below the regrowth interface induces n-type and p-type conductivity, creating leakage pathways. The non-uniform Mg incorporation is driven by crystal anisotropy and is thus inherent to non-planar regrowth, but can be mitigated by engineering the regrowth interface and process parameters. The unprecedented integration of spatially resolved mapping of dopants, impurities, conductivity, and carrier type is a powerful approach to discriminating distinct factors that limit the performance of regrown diodes, enabling the rational optimization of process and device design.

Temperature stability of individual plasmonic Au and TiN nanodiscs

Refractory plasmonic materials are of interest for high-temperature plasmonic applications due to their increased thermal stability when compared to gold and silver. Titanium nitride (TiN) has been highlighted as a promising refractory material, offering both strong plasmonic and thermal performance. In this work, we analyze the stability of both the structural and optical response of individual plasmonic nanodiscs of various diameters subjected to elevated temperature conditions in air. Using cathodoluminescence spectroscopy, we trace the resonance spectra and shape modifications of the same single TiN and Au discs annealed at increasing temperatures up to 325 °C. TiN discs display greater morphological stability, but the optical properties of both materials deteriorate from 200 °C, although the mechanisms of degradation are different. The results are essential for optimizing nanostructured materials for high temperature nanophotonic applications.

Photon-Correlation Cathodoluminescence Spectroscopy in a SEM: A Tool to Analyze the Performance of Optoelectronics Devices

Photon-Correlation Cathodoluminescence Spectroscopy in a SEM: A Tool to Analyze the Performance of Optoelectronics Devices

Broadband Yellow Phosphor Discovered by Single-Particle Analysis Based on Fluorescence Microscopy, Scanning Electron Microscopy, Cathodoluminescence, and Energy-Dispersive X-ray Spectroscopy.

The discovery of new, efficient, and stable inorganic phosphors excited by near-ultraviolet (n-UV) light is of great significance for the realization of high-performance healthy lighting and special lighting. The traditional methods to find new phosphors are usually time-consuming, laborious, and inefficient. Here, a simple and efficient method to find new phosphors using fluorescence microscopy, scanning electron microscopy (SEM), cathodoluminescence (CL), and energy-dispersive X-ray spectroscopy (EDS) is proposed. At the same time, a phosphor Ca5BaP4O16 (CBPO): Eu2+ found by this method is reported. Under 365 nm excitation, the optimal phosphor shows an ultrabroad yellow emission band with a peak at 573 nm and a full width at half-maximum of 164 nm. Compared with most phosphate phosphors, CBPO: Eu2+ shows good thermal stability. The emission intensity at 150 °C can maintain 61.4% of the initial value at room temperature. Importantly, the quantum efficiency of the optimal CBPO: Eu2+ sample is 66.2%. In addition, a WLED lamp was obtained by combining CBPO: Eu2+ and BAM: Eu2+ phosphors with a 365 nm n-UV chip, which generated high-performance white light with a correlated color temperature of 7115 K and a color rendering index of 89.4. It is certain that the new method is very effective and useful for the discovery of new phosphors.

Metasomatized mantle lithosphere and altered ocean crust as a fluid source for orogenic gold deposits

Whether auriferous hydrothermal fluid is generated during crustal metamorphism or by subcrustal processes to form orogenic gold deposits is hotly debated. Noble gas isotope and halogen abundance ratios can provide important constraints to help resolve this controversy. The Danba gold deposit is a rare example of a Jurassic age hypozonal orogenic gold deposit on the western margin of the Yangtze Craton, China. It is characterized by thick barren quartz veins with fractures infilled by thin auriferous quartz veinlets. The syn-gold quartz veinlets are associated with plagioclase and pyrrhotite and are distinguished from the barren quartz vein hosts on the basis of cathodoluminescence, trace-element content and Raman spectroscopy and microthermometry of fluid inclusions. The dominant fluid inclusions in the gold-bearing quartz and plagioclase are H2O–CH4 with vapor fill of ∼ 15–45 vol% and high pressure-corrected trapping temperatures of ∼ 500 °C, low salinities (<4 wt% NaCl equiv.) and high Mg/Fe ratios. Crushing syn-gold quartz and plagioclase released fluid inclusions with 40Ar/36Ar ratios of between 490 and 710, molar Br/Cl ratios of (0.3–0.7) × 10−3 and molar I/Cl ratios of (18–60) × 10−6. Crushing syn-gold pyrrhotite released fluid inclusions with 3He/4He ratios of 0.21–0.38 Ra (Ra = air value, 1.39 × 10−6) that are higher than typical crustal values of < 0.1 Ra, and 40Ar/36Ar of 330–640 that are similar to the gold-related quartz-hosted inclusions. The combined noble gas and halogen data do not favor an auriferous fluid derived from K- and U-rich Proterozoic granitic basement, which is expected to have radiogenic 40Ar/36Ar and 3He/4He ratios. Instead, the data are more consistent with a fluid source from underlying mantle lithosphere containing a high proportion of altered ocean crust (AOC). The auriferous fluid that formed the Danba gold deposit is thus considered to have been derived from a source comprising both metasomatized mantle lithosphere that had been fertilized in a Neoproterozoic subduction event and a portion of relict AOC beneath the western margin of the Yangtze Craton. In contrast with syn-gold fluid inclusions, those in pre-gold barren quartz are H2O–CO2 dominated. Crushing pre-gold quartz released fluid inclusions with 40Ar/36Ar ratios of 2410–5450, Br/Cl ratios of (1.2–1.5) × 10−3 and I/Cl ratios of (60–80) × 10−6 that are distinctly different to the gold-ore stage. The higher 40Ar/36Ar ratios of the pre-gold fluids are consistent with a source for the barren host quartz veins from prograde greenschist- to amphibolite-facies metamorphism of the Proterozoic granitic basement.