Catalytic Chemical Vapor Deposition Method Research Articles

Silicon nitride produced by catalytic chemical vapor deposition method

The catalytic chemical vapor deposition method is applied to obtain silicon nitride insulating films usable in large-scale integrated circuits. A N2 H4, N2 , and SiH4 gas mixture is decomposed by the catalytic or pyrolytic reaction with a heated catalyzer placed near substrates, and thus silicon nitride films are deposited at low temperatures around 300 °C with deposition rates higher than several hundreds Å/min, without any help from plasma and photochemical excitation. It is found that the resistivity, the breakdown electric field, and also the hydrogen content of the films can be almost equivalent to those of the films deposited by the thermal chemical vapor deposition at 700 °C or more, and that their step coverage appears sufficient to apply them on device fabrication.

Low Temperature Deposition of Silicon Nitride by the Catalytic Chemical Vapor Deposition Method

A new low temperature deposition method named “catalytic chemical vapor deposition (Cat-CVD or CTL-CVD)” is applied to obtain silicon nitride films. In the method, a N2H4, N2, and SiH4 gas mixture is decomposed by the catalytic or pyrolytic reaction with a heated catalyzer placed near substrates, so that silicon nitride films are deposited at substrate temperatures as low as 300°C with deposition rates near 1000 A/min, without plasma nor photochemical excitation. It is found that the resistivity, breakdown electric field and hydrogen content of the films are almost equivalent to those of thermal CVD films deposited at about 700°C, and that the diffusivity of depositing species appears large enough to obtain good stepcoverage.

Study on catalytic chemical vapor deposition method to prepare hydrogenated amorphous silicon

A new type of thermal chemical vapor deposition (CVD) method is presented. In the method, material gases are decomposed by catalytic or pyrolytic reaction with a heated catalyzer, so that films can be deposited at temperatures less than 300 °C without any plasma or photochemical excitation, and the method is particularly called ‘‘Catalytic-CVD.’’ Hydrogenated amorphous silicon films are deposited by this method, and the deposition mechanism is also investigated. It is found that device-quality amorphous silicon films can be obtained and that inactive species, which are generated at the catalyzer and transported without gas-phase reactions, are key species to make a high-quality film by this method.

Catalytic chemical vapor deposition method to prepare high quality hydro-fluorinated amorphous silicon

A new type of chemical vapor deposition method, named ‘‘Catalytic-CVD’’ method, is presented. In the method, deposition gases are decomposed by catalytic or pyrolytic reaction between deposition gases and a heated catalyzer, and films are thermally grown on a substrate at temperatures lower than 300 °C without any help from glow discharge plasma. Hydro-fluorinated amorphous silicon (a-Si:F:H) films are deposited by this method using both a SiF2 and H2 gas mixture and a SiH2F2 and H2 mixture. It is found that a very high quality a-Si:F:H film can be obtained, and for instance, that the photosensitivity for AM-1 of 100 mW/cm2 exceeds 106 and the spin density is as low as 6×1015 cm−3.

Catalytic Chemical Vapor Deposition (CTL-CVD) Method to Obtain High Quality Amorphous Silicon Alloys

Catalytic Chemical Vapor Deposition (CTL-CVD) Method to Obtain High Quality Amorphous Silicon Alloys

Catalytic chemical vapor deposition method to obtain high quality amorphous silicon and silicon-germanium

A new method to deposit amorphous films, named “Catalytic Chemical Vapor Deposition (CTL-CVD)” method, is presented. In the method, the catalytic or pyrolytic reactions between deposition gases and a heated tungsten catalyzer are utilized to lower the deposition temperatures of thermal CVD. It is found that high quality amorphous silicon and silicon-germanium films can be deposited at the substrate temperatures lower than 300 °C and with a deposition rate higher than several Å/sec by this method.

High Quality Amorphous Silicon Prepared by Catalytic Chemical Vapor Deposition (CTL-CVD) Method

AbstractA new method of producing high quality hydrogenated amorphous silicon (a-Si:H) and its compound films is presented. An SiH4 and H2 gas mixture is decomposed without using any plasmas or photochemical excitation, but using only thermal and catalytic reactions between deposition gas and a heated tungsten catalyzer. Photoconductivity of a-Si:H films produced by, this method reaches 10−3 (Ωcm)−1 and photosensitivity exceeds 105 for illumination of AM-1 light of 100 mW/cm2, highly efficient boron- or phosphorus-doping into the films is achieved, and also the optical band gap of the films is easily controlled without apparent degradation of the properties by adding GeH4 gas to the deposition gas.