Based on semiconductor theory and optimization data derived from first-principles, we simulate the conductive and recombination properties of group-V doped zigzag SiCNRs (ZSiCNRs), through in-depth analysis of different substitutional doping models, to unveiling the mechanism of carrier transport in nanodevices. It’s found that though there are two impurity energy levels whether C or Si is substituted in doped ZSiCNRs, the conductivity is significantly larger for Si atom substituted than that of C atom replacement. Besides, different temperature dependent conductivity characters are exhibited in the weak and strong ionization regions, indicating the differences in dominant factor for the transport processes. The temperature-dependent holes trapping rate of carrier recombination increased sharply for C or Si atom substitution, indicating a negative temperature-dependence of lifetime of non-equilibrium minority carrier for doped ZSiCNRs. Further, the non-equilibrium minority carrier lifetime is longer with small injection due to the presence of donor impurities in group-V doped ZSiCNRs.