Capture Cross Section Research Articles

Studies on the performance of FASnI3:Zn2+-based lead-free perovskite solar cells: A numerical simulation

The search of stable, lead-free absorber material for perovskite solar cells (PSC) resulted in many alternatives, particularly, zinc (Zn) doped formamidinium tin iodide (FASnI3). This work facilitates in investigating the behavior of four different Zn doping ratios 0 %, 2 %, 5 %, and 10 % (say Zn-0, Zn-2, Zn-5, and Zn-10) on the performance of FTO/PCBM/FASnI3:Zn2+/MoOx/Au solar cell structure. A precise evaluation on the impact of the four various Zn doping ratios in the mentioned solar structure in terms of thickness of perovskite absorber layer, hole transport layer, and electron transport layer were executed. The investigation through numerical study further deals with the role of interfacial defect density and capture cross-section of charge carriers on the performance of suggested PSCs with varying Zn doping ratios. It is evident from the optimization results that PSC having absorber layer thickness of 400 nm yields better power conversion efficiency (PCE) of 11.49 % for Zn-5. The PCE is further improved to 13.98 % for capture cross section of 2 ×10−15 cm2. The entire work witnessed distinguishable superior behavior from FASnI3-based PSC doped with Zn ratio: Zn-5 in comparison to the PSCs doped with other Zn ratios. Furthermore, impact of the series and shunt resistances on performance parameters are also examined.

Pure CaF2 crystal for fast neutron detection

Pure CaF2 crystals have been widely used for optical functional crystals due to their good optical properties, mechanical properties, and chemical stability. This study discovered the crystal's pulse shape discrimination (PSD), proving it a promising scintillator for fast neutron detection via the 40Ca neutron capture reaction. Luminescence emission spectra were studied by X-ray luminescence measurements. The maximum emission peak was observed between 250 and 300 nm, corresponding to self-trap exciton emission. The crystal response to gamma, alpha, and neutron were studied under 137Cs, 241Am, and 252Cf radiation sources, respectively. The difference in gamma and alpha decay times enabled the PSD capability of pure CaF2. Large neutron reaction cross-sections, PSD capability, and good chemical stability make pure CaF2 crystal candidates for fast neutron beam monitoring detectors. Moreover, the crystal can be used for 40Ca(n,p)40K and 40Ca(n,α)37Ag neutron capture cross-section study.

Cross section sensitivity to perturbation strengths in distorted waves for double electron capture by alpha particles from helium targets

Computer experiments are performed on total cross sections for capture of both electrons from helium targets at 100-10000 keV. Employed are four quantum-mechanical perturbative four-body distorted wave methods (one of the first and three of the second order). The goal is to determine the cross section sensitivity to the perturbation strengths in distorted waves from the second-order methods. The perturbation strength is parametrized by the Sommerfeld factor (the quotient of the nuclear charge and the relative velocity of the colliding particles). At each fixed impact energy, the sought sensitivity is monitored by gradually modifying the nuclear charges in the Sommerfeld factors. These factors reside in the Coulomb distortions of the unperturbed channels states. The focus is on the electronic distortions through the eikonal Coulomb logarithmic phases and the full Coulomb waves. The logarithmic phases are the constituents of the compound phases for the net charges of the two heavy scattering aggregates in relative motions. A striking perturbation strength sensitivity of the obtained total cross sections is recorded.

Accuracy Evaluation of Monte Carlo Simulation Results Using ENDF/B-VIII.0 and JENDL-5 Libraries for 10 MWth Micro Heat Pipe-Cooled Reactor

The micro heat pipe-cooled reactor is an innovative type of reactor that utilizes heat pipes to cool its core. It consists of a reactor core, an energy conversion system, shielding, and a heat removal system. This reactor shows great potential as a viable option for supplying electricity in remote areas. By incorporating a monolithic core with heat pipes and an efficient heat conversion system, this reactor design eliminates the need for a main pipeline, circulating pump, and auxiliary equipment, resulting in a cost-effective, compact, and transportable system. The monolithic reactor design has undergone significant advancements in neutronics and thermal hydraulics. This article focuses on evaluating the impact of the latest released nuclear data libraries, ENDF/B-VIII.0 and JENDL-5, on calculated neutronics and kinetics parameters. The total keff uncertainty was propagated and found to be significant for both recently evaluated nuclear data libraries (678.52 pcm for ENDF/B-VIII.0 and 525.91 pcm for JENDL-5, respectively). The total uncertainty originated from nuclear data was evaluated for total ν, reaction cross sections, and angular distributions in the case of JENDL-5, and for ENDF/B-VIII.0, uncertainty from angular distributions was not included because of the unavailability of its multigroup structure covariance matrices. The results reveal that the largest contributor for ENDF/B-VIII.0 is 235U total (409.18 pcm), while that for JENDL-5 is 56Fe capture cross section (361.93 pcm). For the kinetic parameter’s uncertainty, the impact on the total βeff, leff, and λeff simulation results was found to be not significant (about 1%).

Reassessing iron–gallium recombination activity in silicon

In this work, we present a comprehensive re-evaluation of the iron–gallium (FeGa) recombination parameters in silicon using injection-dependent lifetime spectroscopy (IDLS). Ga-doped silicon wafers (of varying resistivities) with precise concentrations of intentional iron contamination in the silicon wafer bulk, through ion implantation and distribution, were used. The presence of interstitial Fei and FeGa, and their lifetime-limiting effects in these silicon wafers, were confirmed through measuring the effective minority carrier lifetime changes during the conditions that are known to cause FeGa dissociation and association. The presence of Fe was also confirmed by deep-level transient spectroscopy. To ensure accurate IDLS analysis of the FeGa defect in silicon, a lifetime linearization scheme was employed to effectively filter out interference by other defects. Error analysis was employed to find the combination of defect parameters that best fit the experimental data and to ascertain the range of uncertainty associated with the IDLS best-fit results. The optimal fitting of the experimental IDLS by Shockley–Read–Hall statistics produced an electron capture cross section σn=2.3×10−14cm2, hole capture cross section σp=1.1×10−14cm2, and a trap energy level Et=EV+0.2−0.01+0.02eV for the FeGa defect in silicon. The extracted defect parameters are also verified by experimentally measuring the crossover point of Fei and FeGa lifetime curves.

Electric-Tree Resistant Performance and Thermal Charge-Carrier Dissipation Mechanism of Voltage Stabilizer-Modified EPDM

In order to improve electric-tree resistant performance and dielectric breakdown strength of ethylene-propylene-diene misch-polymere (EPDM) material used for cable accessory reinforce insulation, the two specific aromatic ketone compounds—vinylphenylacetone (VPE) and 4-propylene oxyxy-2-hydroxydibenzenone (AOHBP) are employed as two paradigms of voltage stabilizer for chemical-graft modifications. Electric-tree resistances and insulation performances of modified EPDM materials and their charge trapping mechanism of thermoelectron inhibitions are studied by the accelerated electric-tree aging experiments, alternating current (AC) dielectric breakdown tests, surface potential trap-level analyses and first-principles calculations. Both the two species of voltage stabilizers are effective for promoting electric-tree inception voltage and dielectric breakdown strength, leading to a high extension of electric-tree morphology and smaller dimension of electric-trees growth, in which AOHBP is more significant. The two species of voltage stabilizers have been successfully grafted onto EPDM molecular-chains in thermal-chemistry crosslinking reactions of EPDM, introducing multiple shallow levels of charge traps, which reduces the energy released by trapping charge carriers and thus alleviates electric-tree aging of EPDM. The AOHBP and VPE represent a high electron affinity and a small electronic energy gap, which is competent of assimilating the kinetic energies of hot charge carriers whilst restricting Auger electronic excitation. Especially, the benzene group in voltage stabilizer renders shallow level charge traps with a larger carrier capture cross-section than deep traps and simultaneously possesses the high atomic vibration frequencies similar as electronic-transition energies, which results in effective dissipation on the kinetic energies of hot charge carriers. This mechanism dominates to increase electric-tree resistance and insulation strength of EPDM. The present study proves the important role of voltage stabilizers in improving insulation performance of EPDM material, and reveals the refrigeration mechanism on hot charge carriers for restricting electric-tree growth, which provides a significant strategy of chemical modifications for developing high-insulation cable accessory materials.

Novel integrated structure and function of Mg–Gd neutron shielding materials

Abstract As the lightest metal structural materials, magnesium (Mg) alloys offer extensive application potential. Gadolinium (Gd), as the primary alloying element in Mg alloys and recognized for its notable thermal neutron capture cross-section, is considered one of the most efficient neutron absorbers. Thus, the Mg–Gd alloy is highly expected to emerge as a material with remarkable neutron absorption capacity. Hence, in this study, the thermal neutron-shielding capabilities of Mg–Gd alloys were comprehensively examined by fabricating four as-cast Mg–xGd alloys with varying compositions (x = 0, 5, 10, and 15 wt%). The obtained results were further corroborated by sophisticated modeling and calculations using SuperMC. The results revealed a direct correlation between the thermal neutron absorption capacity of the Mg–Gd alloys and the increase in Gd content, with a noteworthy neutron attenuation factor of 22.33. Moreover, in an Au ion irradiation experiment conducted at 200°C, the Mg–15Gd alloy exhibited exceptional radiation resistance, with a displacement per atom (dpa) of 10. The matrix and second-phase regions were devoid of any cavity formation. Instead, a finite number of dislocation rings were observed, forming both leaf-like and granular Gd-rich nanoscale precipitates. This study underscores the versatility of Mg–Gd alloys as efficient neutron shielding materials and structural materials tailored for applications demanding radiation resistance in diverse environments.

Transfer learning and neural networks in predicting quadrupole deformation

Abstract Accurately determining the quadrupole deformation parameters of atomic nuclei is crucial for understanding their structural and dynamical properties. This study introduces an innovative approach that combines transfer learning techniques with neural networks to predict the quadrupole deformation parameters of even-even nuclei. With the application of this innovative technique, the quadrupole deformation parameters of 2331 even-even nuclei are successfully predicted within the nuclear region defined by proton numbers \(8 \leq Z \leq 134\) and neutron numbers \(N \geq 8\). Additionally, the study discusses the impact of nuclear quadrupole deformation parameters on the capture cross-sections in heavy-ion fusion reactions, reconstructing the capture cross-sections for the reactions \(^{48}\text{Ca} + ^{244}\text{Pu}\) and \(^{48}\text{Ca} + ^{248}\text{Cm}\). This research offers new insights into the application of neural networks in nuclear physics and underscores the potential of merging advanced machine learning techniques with both theoretical and experimental data, particularly in fields where experimental data is limited.

Controlling Unintentional Defects Enables High‐Efficient Antimony Selenide Solar Cells

AbstractDeep‐level defects in semiconductor materials usually induce carrier trapping and non‐radiative recombination. However, defects caused by unintentional contaminants in antimony selenide (Sb2Se3) solar cells have rarely been reported. Herein, the correlation between defect properties and unintentional impurities in the Sb2Se3 absorber is investigated, which is prepared by injection vapor deposition with Sb2Se3 source purities ranging from 99.9% to 99.9999%. The analysis of deep‐level transient spectra reveals that an increase in impurity concentration does not result in new defect types. Nevertheless, the higher impurity level causes an increase in both the defect density and the capture cross section of the original defect. To address this challenge, defect engineering is developed to regulate the growth of the Sb2Se3 absorber. This strategy completely suppresses deepest defect states E3, a mixture of intrinsic defect (SbSe) and impurity Si related defect. As a result, the carrier lifetime increases significantly from 0.37 to 3.4 ps. This enables to fabricate Sb2Se3 solar cells with a power conversion efficiency of 10.41%. This work uncovers the characteristics of unintentional contaminant‐related defects, and provides a strategy for fabricating highly efficient Sb2Se3 solar cells with low‐purity source materials.

Space charge region recombination in highly efficient silicon solar cells

The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with a long Shockley–Reed–Hall lifetime is calculated theoretically by taking into account the concentration gradient of excess electron-hole pairs in the base region. Effects of the SCR lifetime and applied voltage on the structure ideality factor have been analyzed. The ideality factor is significantly reduced by the concentration gradient of electron-hole pairs. This mechanism provides an increase of the effective lifetime compared to the case when it is insignificant, which is realized at sufficiently low pair concentrations. The theoretical results have been shown to be in agreement with experimental data. A method of finding the experimental recombination rate in SCR in highly efficient silicon solar cells (SCs) has been proposed and implemented. It has been shown that at the high excess carrier concentration exceeding 1015 cm–3 the contribution to the SCR recombination velocity from the initial region of SCR that became neutral is significant. From a comparison of theory with experiment, the SCR lifetime and the ratio of the hole to the electron capture cross sections are determined for a number of silicon SCs. The effect of SCR recombination on the key characteristics of highly efficient silicon SCs, such as photoconversion efficiency and open-circuit voltage, has been evaluated. It has been shown that they depend not only on the charge carrier lifetime in SCR, but also on the ratio of hole to electron capture cross sections σp /σn. When σp /σn < 1, this effect is significantly strengthened, while in the opposite case σp /σn > 1 it is weakened. It has been ascertained that in a number of highly efficient silicon SCs, the distribution of the inverse lifetime in SCR is described by the Gaussian one. The effect described in the paper is also significant for silicon diodes with a thin base, p-i-n structures, and for silicon transistors with p-n junctions. In Appendix 2, the need to take into account the lifetime of non-radiative excitonic Auger recombination with participation of deep impurities in silicon is analyzed in detail. It has been shown, in particular, that considering it enables to reconcile the theoretical and experimental dependences for the effective lifetime in the silicon bulk.

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

Bonding pad over active (BPOA) layout, which stacks traditional horizontal structure pad electrodes vertically above the active area, is an area-effective device architecture and packaging-enabled solution for GaN-based high electron mobility transistors (HEMTs). In this work, the dynamic switching and electric field distribution of such layout, as well as associated capacitance–voltage and trapping characteristics, are comprehensively studied on D-mode GaN-on-sapphire HEMT by performing numerical simulations. In terms of different pad electrodes covering the active area, BPOA is composed of various structures such as gate-related and drain-related BPOAs (i.e. G-BPOA and D-BPOA), among which G-BPOA exhibits inferior switching characteristics due to the additional introduction of Miller capacitance that prolongs the device switching, while breakdown voltage of D-BPOA is 400–900 V lower than other BPOA counterparts due to the interplay between D-BPOA and the drain electrode. Furthermore, the effects of trap capture cross section and trap density on switching characteristics are evaluated. These results highlight the differences in electrical characteristics of various structures within the BPOA layout, and provide valuable insights into BPOA device design and performance improvement.

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (σ p) of H1 are determined to be 0.75 eV and 4.67 × 10−15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 × 1015 cm−3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

Formation of Merging Stellar-mass Black Hole Binaries by Gravitational-wave Emission in Active Galactic Nucleus Disks

Many stellar-mass black holes (sBHs) are expected to orbit supermassive black holes at galactic centers. For galaxies with active galactic nuclei, it is likely that the sBHs reside in a disk. We study the formation of sBH binaries via gravitational-wave emission in such disks. We examine analytically the dynamics of two sBHs orbiting a supermassive black hole, estimate the capture cross section, and derive the eccentricity distribution of bound binaries at different frequency bands. We find that the majority of the merging sBH binaries, assembled in this manner, can be measured as highly eccentric, detectable in the LIGO-Virgo-KAGRA (LVK) band from their formation, with (1 − e) ≪ 1, through their circularization and up to their merger; the remaining binaries circularize to small eccentricities (e ≲ 0.3) before entering the LVK band. More eccentric mergers would be observed for sBHs with higher random velocities, closer to the supermassive black hole, or at lower observing frequency bands, as planned in future gravitational-wave detectors such as the Einstein Telescope and LISA.

Neutronic performance of 208Pb-Bi eutectic-cooled fast reactor with uranium nitride fuel (enriched 15N)

Fast reactors (FRs) require more uranium enrichment than LWRs and fuel reprocessing. The solution proposed to address these issues is to use the modified CANDLE burnup scheme on the reactor core. The use of uranium nitride (UN) as fuel was proposed because the UN fuel has several advantages, such as high melting point, high heavy metal density, and large thermal conductivity. However, using UN as a fuel can produce the radioactive isotope 14C via the reaction 14N (n, p)14C. Therefore, in this study, a neutronic analysis was performed in a modified CANDLE fast reactor employing UN and UN (enriched 15N) as fuel using SRAC. The modified CANDLE fast reactor fuelled with UN (99% 15N) has a higher keff than the UN-fuelled reactor with similar parameters. Similarly, the atomic density of fissile nuclides and power density are higher because the 15N isotope has a smaller neutron capture cross-section than the 14N isotope.

TALYS calculation and a short review of the experimental status of proton capture studies on p-nuclei: A guide to future investigation* *The present study was funded by DST, Govt. of India, under the WOS-A scheme (Reference No.: SR/WOS-A/PM-68/2017)

TALYS calculations were performed to obtain the theoretical proton capture cross-sections on the p-nuclei. A short review on the status of related experimental studies was also conducted. Some basic properties such as Q-values, Coulomb barrier, Gamow peak, Gamow Window, and decay properties of the parent and daughter nuclei were studied. Various experimental parameters, e.g., beam energy, beam current, targets, and detectors, used in experimental investigations reported in the literature, were tabulated. The results of the TALYS calculations in the Gamow region were compared with the corresponding experimental values wherever available. This study is expected to facilitate the planning of future experiments.

Deep-Level Transient Spectroscopy Studies on Four Different Zinc Oxide Morphologies

In this work, we described the variations in the defect energy levels of four different ZnO morphologies, namely nanoribbons, nanorods, nanoparticles, and nanoshuttles. All the ZnO morphologies were grown on a seeded 4% Boron-doped p-type silicon (p-Si) wafer by using two different synthesis techniques, which are chemical bath deposition and microwave-assisted methods. The defect energy levels were analyzed by using the Deep-Level Transient Spectroscopy (DLTS) characterization method. The DLTS measurements were performed in the 123 K to 423 K temperature range. From the DLTS spectra, we found the presence of different trap-related defects in the synthesized ZnO nanostructures. We labeled all the traps related to the four different ZnO nanostructures as P1, P2, P3, P4, and P5. We discussed the presence of defects by measuring the activation energy (Ea) and capture cross-section (α). The lowest number of defect energy levels was exhibited by the ZnO nanorods at 0.27 eV, 0.18 eV, and 0.75 eV. Both the ZnO nanoribbons and nanoparticles show four traps, which have energies of 0.31 eV, 0.23 eV, 0.87 eV, and 0.44 eV and 0.27 eV, 0.22 eV, 0.88 eV, and 0.51 eV, respectively. From the DLTS spectrum of the nanoshuttles, we observe five traps with different activation energies of 0.13 eV, 0.28 eV, 0.25 eV, 0.94 eV, and 0.50 eV. The DLTS analysis revealed that the origin of the nanostructure defect energy levels can be attributed to Zinc vacancies (Vzn), Oxygen vacancies (Vo), Zinc interstitials (Zni), Oxygen interstitials (Oi), and Zinc antisites (Zno). Based on our analysis, the ZnO nanorods showed the lowest number of defect energy levels compared to the other ZnO morphologies.

Calculation And Uncertainty Analysis of Core Parameters of ALMANAR Reactor Using New Nuclear Data Libraries

Abstract A small modular lead-cooled fast spectrum core concept called ALMANAR designed to produce 45 MWth power for 22 years operating without refuelling was proposed in a previous study. The neutronics investigation showed its excellent inherent safety features. It could be considered as a candidate for future electricity source for the near future. It is noteworthy that the target accuracy for eigenvalue calculation for keff regardless of spectrum is set to 300 pcm. However, findings in this analysis revealed that the keff uncertainty was larger for the recently released nuclear data libraries (about 800 pcm), mostly from 235U capture cross section (624 pcm) in the case of ENDF/B-VIII.0 and 238U inelastic scattering cross section (437 pcm) in the case of JENDL-5. Selected kinetic parameters of the ALMANAR core and their uncertainty were also evaluated and analysed. No major impact on the total ßeff, leffeff and λeff simulation results was found. In order to improve the reliability of criticality calculations of the lead-cooled small fast reactor, the accuracy of capture and fission cross section of 235,238U, the capture cross section of 10B and the elastic scattering cross section of 208Pb at the fast energy range of ENDF/B-VIII.0 should be improved. Furthermore, the inelastic scattering and capture cross section of 238U, fission and capture cross section of 235U and the capture cross section of 10B of JENDL-5 should also be improved.

Spin-dependent recombination affected by post-annealing of organic photovoltaic devices

Organic photovoltaic devices (OPVs) are attracting attention because of recent rapid enhancement of their power conversion efficiency. For further improvement, optimization of fabrication processes is one useful path to a solution. During OPV fabrication, particularly of the bulk heterojunction active layer, annealing treatments contribute to the device performance. Many studies have examined annealing-related properties. However, further research must clarify how paramagnetic species in the devices play their roles by annealing. Using well-known OPVs, we investigated the relation between spin-dependent recombination (SDR) current and the paramagnetic species, which vary the numbers by post-annealing with active layers consisting of poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM). A simultaneous detection method of electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR), which we originally developed, was applied to OPVs for the first time ever reported. Results show that PC61BM anion radicals generated by post-annealing of P3HT:PC61BM OPVs with a lithium fluoride (LiF)/aluminum (Al) electrode do not contribute to the SDR current at the interface and that P3HT cation radicals enhance the SDR current. By contrast, devices with an Al electrode without LiF decrease the total SDR current, although the quantities of cation radical molecules do not vary. This finding suggests that changes of the hole blocking layer in the devices caused by the annealing treatment affect the size of capture cross sections of P3HT cation radicals. Our new method of quantitative observation of the EDMR changes through the ESR signals is expected to be useful for investigating the capture cross sections in OPVs.

Instability of a Kerr-type naked singularity due to light and matter accretion and its shadow

We study null and timelike constant radii geodesics in the environment of an over-spinning putative Kerr-type naked singularity. We are particularly interested in two topics: first, the differences of the shadows of the naked rotating singularity and the Kerr black hole; and second, the spinning down effect of the particles falling from the accretion disk. Around the naked singularity, the non-equatorial prograde orbits in the Kerr black hole remain intact up to a critical rotation parameter ( α=63−9 ) and cease to exist above this value (Charbulák and Stuchlík 2018 Eur. Phys. J. C 78 879). This has an important consequence in the shadow of the naked singularity if the shadow is registered by an observer on the polar plane or close to it as the shadow cannot be distinguished from that of a Kerr black hole viewed from the same angle considering only the light emanating from the unstable photon orbits. We show that the timelike retrograde orbits in the equatorial plane immediately (after about an 8% increase in mass for the case of initial α = 1.5) reduce the spin parameter of the naked singularity from larger values to α = 1 at which an event horizon appears. This happens because the retrograde orbits have a larger capture cross-section than the prograde ones. So if a naked singularity happens to have an accretion disk, it will not remain naked for long, an event horizon forms.

Gadolinium Concentration Measurement with an Atomic Absorption Spectrophotometer

Abstract Because gadolinium (Gd) has the highest thermal neutron capture cross section, resulting in an 8 MeV gamma cascade upon capture, it has been proposed for dissolution in water Cherenkov detectors to achieve efficient neutron tagging capabilities. Whereas metallic Gd is insoluble in water, several compounds are very easy to dissolve. Gadolinium sulfate, Gd2(SO4)3, has been thoroughly tested and proposed as the best candidate. Accurate measurement of its concentration, free of doubt from impurities in water, is crucial. An atomic absorption spectrophotometer (AAS) is a device that suits this purpose and is widely used to measure the concentration of many elements. In this study, we describe three different approaches to measure Gd sulfate concentrations in water using an AAS: doping samples with potassium and lanthanum, and employing tantalum and tungsten platforms.