The use of secondary ion mass spectrometry (SIMS) has long been established as a powerful tool forthe analysis of microelectronic devices. However, as newer fabrication technologies emerge, and device dimensions shrink, increasing demands are placed upon the SIMS analyst.The present work illustrates how the depth profiling and direct ion imaging capabilities of a Cameca ims 4f SIMS can be exploited to determine the structure and dopant chemistry of a state-of-the-art16 megabit DRAM (dynamic random access memory) device. The optical micrograph shown in Fig. 1 is an overview of a portion of the sense amplifiers located between two array blocks. In the centre of this area, p-type devices sitting in an n-well, surrounded on either side by n-type devices, all in a p-type substrate can be observed. The object of the study was to determine if a low concentration p-type implant is present below the n-type devices.