Over the years, there has been significant research aimed at improving the performance of titanium disulfides (TiS2) in a wide range of applications, including lubricants, batteries, thermoelectric and electronic devices, catalysts, superconductors, photovoltaic devices, and more. This work investigates the optoelectronic properties of TiS2 using Density Functional Theory (DFT) calculations. The slab models were constructed for bulk, bilayer, and monolayer TiS2 (001) planes based on the 1T-TiS2 hexagonal phase. The Generalized Gradient Approximation (GGA)-PBE functional yielded the most accurate bandgaps: 0.178eV (bulk), 0.047eV (bilayer), and 0.112eV (monolayer). The calculated lattice constants for bulk TiS2 with GGA-PBE were a = b = 3.407Å and c = 5.697Å, with an equilibrium volume of 57.24ų. Electronic density of states (DOS) analysis revealed semiconducting behavior for both bulk and monolayer TiS2, with dominant peaks at the valence band. Bilayer TiS2 exhibited a higher DOS in the conduction band, indicating a more conductor-like character. Light absorption calculations showed the strongest peak for bilayer TiS2 (~610,000cm⁻¹ at 14.8eV), followed by monolayer (~13eV) and bulk (~12eV). These results suggest that bulk TiS2 is preferable for applications requiring superior electrical properties, while bilayer TiS2 is more advantageous for applications focusing on light capture.