Indium Cadmium Research Articles

SPR Effect Enables Flexible Electronic Environment and Activity of Cd0.7In2.2S4-30 for High-Performance Pyro-PEC Catalytic Capability.

Plasma-semiconductor systems hold significant promise in the field of photoelectrocatalysis. In this study, the pyroelectric material cadmium indium sulfide (Cd0.7In2.2S4-30) and Pt were used as catalysts, and a temperature gradient was introduced to investigate the influence of surface plasmon resonance (SPR) effect on the pyroelectric and photocatalytic performance. Interestingly, under the influence of the SPR effect, Cd0.7In2.2S4-30 demonstrates a 1.6-fold and 1.4-fold increase in current density under photocatalytic and pyro-photoelectrocatalytic conditions at 1.23 V vs RHE, respectively. Furthermore, under the protection of surface metal Pt, a notable enhancement in the charge separation efficiency and stability of the photoelectrode material is observed. The combination of outstanding performance reveals that Pt noble metal ions, influenced by the SPR effect, generate a localized electric field at the adjacent semiconductor interface, enhancing the charge transfer capability between metal nanoparticles and the semiconductor, thereby promoting electron-hole separation and improving semiconductor photocatalytic activity. Additionally, the SPR effect increases the yield of high-energy pyro-electrons on plasma metal and facilitates their effective transfer to the semiconductor, thereby promoting the generation of thermally induced electrons. This study reveals the multifaceted of SPR effects on the behaviors of semiconductors and provides an opportunity to rationally design metal-semiconductor photocatalytic materials for efficient solar energy conversion.

Efficient CdIn2S4/MgIn2S4 heterojunction for ultrasensitive detection of lung cancer marker neuron-specific enolase

In this work, a photoelectrochemical (PEC) immunosensor was constructed for the ultrasensitive detection of lung cancer marker neuron-specific enolase (NSE) based on a microflower-like heterojunction of cadmium indium sulfide and magnesium indium sulfide (CdIn2S4/MgIn2S4, CMIS) as photoactive material. Specifically, the well-matched energy level structure and narrow energy level gradients between CdIn2S4 and MgIn2S4 could accelerate the separation of electron-hole (e−-h+) pairs in the CMIS heterojunction to enhance the photocurrent of CMIS, which was increased 5.5 and 80 times compared with that of single CdIn2S4 and MgIn2S4, respectively. Meanwhile, using CMIS as photoactive material, increasing the biocompatibility by dropping Pt NPs on the surface of CMIS to immobilize the antibody through Pt–N bond. Fe3O4-Ab2, acting as the quencher, competitively consumes electron donors and absorbs light, leading to photocurrent quenching. With the increasing of quencher, the photocurrent decreased. Hence, the developed “signal-off” PEC immunosensor realized the trace detection of NSE within the range from 1.0 fg/mL to 10 ng/mL with a low detection limit of 0.34 fg/mL. This strategy provided a new perspective for establishing ternary metal sulfide heterojunction to construct PEC immunosensor for sensitive detection of disease biomarkers.

Cd4InO(BO3)3: A New Nonlinear Optical Crystal Exhibiting Strong Second Harmonic Generation Effect and Moderate Birefringence

A new noncentrosymmetric cadmium indium borate, Cd4InO(BO3)3 (CIBO) has been successfully developed via a standard solid-state reaction. Its crystal structure was confirmed by the single crystal X-ray diffraction, which shows that CIBO belongs to the non-centrosymmetric and polar space group Cm. Its structure contains the distorted InO6 and CdOn (n = 6, 8) polyhedra, which link together by sharing an edge or corner to build a three dimensions framework with BO3 triangles accommodated in tunnels. Benefiting from the approximately parallel configuration of BO3 triangles, CIBO exhibited a strong second harmonic generation (SHG) effect (3 × KDP), and moderate birefringence of 0.077@1064 nm. Further optical and thermal characterizations suggest that CIBO possesses a wide transparent window and good thermal stability. Theoretical calculation reveals that the macroscopic SHG coefficients of CIBO results from the synergistic effect of the parallel arrangement of BO3 groups and d10 Cd2+ cation.

Measurements of the 107 Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility

Silver indium cadmium (Ag–In–Cd) control rod is widely used in pressurized water reactor nuclear power plants, and it is continuously consumed in a high neutron flux environment. The mass ratio of 107Ag in the Ag–In–Cd control rod is 41.44%. To accurately calculate the consumption value of the control rod, a reliable neutron reaction cross section of the 107Ag is required. Meanwhile, 107Ag is also an important weak r nucleus. Thus, the cross sections for neutron induced interactions with 107Ag are very important both in nuclear energy and nuclear astrophysics. The (n, γ) cross section of 107Ag has been measured in the energy range of 1–60 eV using a back streaming white neutron beam line at China spallation neutron source. The resonance parameters are extracted by an R-matrix code. All the cross section of 107Ag and resonance parameters are given in this paper as datasets. The datasets are openly available at http://www.doi.org/10.11922/sciencedb.j00113.00010.

3D micromorphology-contact resistance-conductivity insights of quasi 2D Cd1-xPbxS thin films: Investigation based on stereometric and fractal analysis

In this work, stereometric and fractal analysis of Lead (Pb) doped Cadmium sulfide (CdS) thin films synthesized by pulsed laser deposition is reported. The atomic force microscopy (AFM) data were studied to understand the influence of doping on micromorphology, contact resistance and conductivity of CdS films. Stereometric analysis exhibits a non-linear behavior, from Pb doping, in surface roughness with non-Gaussian height distribution in addition to influence on microtexture surface porosity and elastic deformation. A sinusoidal behavior of local surface smoothness with lesser surface complexities for higher Pb concentrations is confirmed from the Hurst coefficient and fractal dimension values of the film surfaces. Surface entropy reveals a uniform deposition of the thin films while a non-linear variation in surface percolation is justified from fractal succolarity values. The tuning of contact resistance between window and buffer layer and thus, enhancement in efficiency of Cadmium indium gallium selenide (CIGS) solar cells is possible with Pb doping in CdS thin films, in the framework of fractal dimension. Additionally, the enhancement in conductivity of Cd1-xPbxS thin films is attributed to surface smoothening process mediated by the large values of Hurst coefficient and autocorrelation length with a consequent decline in RMS roughness.

One-step hydrothermal synthesis of CdxInyS(x+1.5y) for photocatalytic oxidation of biomass-derived 5-hydroxymethylfurfural to 2, 5-diformylfuran under ambient conditions

The CdxInyS(x+1.5y) catalysts with gradient Cd:In ratios were controllably synthesized via an one-step hydrothermal approach. Particularly, the hydrothermal synthesis conferred those CdxInyS(x+1.5y) catalysts with Cd:In ratios over 1:2 with a one-dimensional–three-dimensional heterojunction structure composed of CdS nanorods and cubic-phase CdIn2S4. Our characterization evidences reflected that the CdS nanorods effectively promoted the separation of photoexcited electron–hole pairs in CdxInyS(x+1.5y) and enabled transboundary transfer of photogenerated carriers. Spectroscopic and experimental results were further employed to develop a detailed catalytic mechanism, in which the superoxide anion (•O2−) plays an important role in the catalytic oxidation of HMF to DFF by CdxInyS(x+1.5y). Unlike other photocatalysts with •O2− as the main active species, Cd1.5In2S4.5 gives an excellent performance in HMF conversion. This shows the great potential of cadmium–indium sulfides as photocatalysts for biomass conversion under ambient conditions.

Fabrication of cadmium indium sulfide/cadmium sulfide/polyoxo-titanium cluster composite nanofibers with enhanced photocatalytic activity for nitrite degradation

Photocatalytic removal of nitrite is a convenient and green method. Photocatalytic technology has been limited, however, by its light absorption range and unsuitable conduction and valence bands, which affect the photocatalytic efficiency and nitrogen selectivity. In this work, we synthesized a cadmium indium sulfide/cadmium sulfide/polyoxo-titanium cluster composite nanometer photocatalyst with a visible light response, and further fixed the photocatalyst to fibers to form electrospun film. The samples were characterized using direct reflectance spectroscopy, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence, Fourier-transform infrared spectroscopy, N2 adsorption–desorption isotherms, and the transient photocurrent response. The photocatalytic activity of the prepared photocatalyst was evaluated based on the transformation of nitrite under simulated sunlight. The photocatalytic results showed that the nitrite conversion rate was as high as 98% within 2 h and had about a 63% selectivity of nitrogen. The combination of CdS and Cdln2S4 better captured visible light and could be adjusted to an appropriate oxidation–reduction potential energy after loading with polyoxo-titanium clusters. Subsequently, the results of cycling experiments indicated that the Cdln2S4/CdS/polyoxo-titanium clusters composite nanofibers maintained a fairly consistent photocatalytic performance. The effects of electron and hole scavengers were investigated and the possible photocatalytic mechanism was elucidated by studying the products during the photocatalytic degradation.

Analysis of the Crystallogeometry of Tetragonal Martensite in Indium‒Cadmium Alloys by the Method of Electron Back-Scattering Diffraction

Analysis of the Crystallogeometry of Tetragonal Martensite in Indium‒Cadmium Alloys by the Method of Electron Back-Scattering Diffraction

Effect of Doping and Electrotransfer on Contact Melting in Cadmium–Indium and Cadmium–Tin Systems

X-rays are used to investigate phase formation upon contact melting, including cases of electrotransfer, in Cd–In and Cd–Sn systems upon adding small amounts of sodium to cadmium. The nucleation of two-component intermetallic compounds is established. The microhardness of diffusion zones along interlayers is measured. An attempt is made to explain the obtained results.

Deposition, characterizations and photoelectrochemical performance of nanocrystalline Cu–In–Cd–S–Se thin films by hybrid chemical process

Nanocrystalline, uniform, pentanary mixed metal chalcogenide (PMMC) thin films of copper indium cadmium sulfoselenide (CuInCd(SSe)3) were successfully synthesized using simple, self-organized, arrested precipitation technique in an aqueous alkaline medium. The optical, structural, morphological, compositional and electrical properties of synthesized thin films were investigated as a function indium (In3+) concentration. An optical absorption study revealed that direct allowed transition and band gap energy decreases typically from 1.46 to 1.25 eV. The X-ray diffraction studies revealed that the PMMC thin films have a nanocrystalline nature and crystallite size increases with the increase in the In3+ concentration. Tuning of surface morphology from nanospheres to peas-like morphology with uniform, well-adhered distributed throughout the substrate surface were observed by field emission scanning electron microscopy micrographs. The high-resolution transmission electron microscopy images and selected area electron diffraction pattern were illustrated that compactly interconnected particles with nanocrystalline nature. Energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy results confirmed that synthesized thin films had an appropriate chemical purity. The electrical conductivity and thermoelectric power measurement indicates that, the films have n-type conductivity. A photoelectrochemical conversion efficiency of 2.40% was achieved with a current density of 2.87 mA/cm2. The developed route may provide an alternative approach to synthesize multinary metal chalcogenide thin-film solar cell. Furthermore, we have developed a predictive model of a CICSSe thin-film solar cell using the artificial neural network. The proposed model is useful for the integrated development environment for the predictive modeling and design of high-efficient solar cells.

Solvothermal synthesis of CdIn2S4 photocatalyst for selective photosynthesis of organic aromatic compounds under visible light

Ternary chalcogenide semiconductor, cadmium indium sulfide (CdIn2S4), was prepared by a simple solvothermal method using ethylene glycol as a solvent, as well as indium chloride tetrahydrate (InCl3.4H2O), cadmium nitrate tetrahydrate [Cd(NO3)2.4H2O], and thiacetamide (TAA) as precursors. The resulted sample was subject to a series of characterizations. It is the first time to use CdIn2S4 sample as a visible light-driven photocatalyst for simultaneous selective redox transformation of organic aromatic compounds. The results indicate that the as-synthesized CdIn2S4 photocatalyst not only has excellent photocatalytic performance compared with pure In2S3 and CdS for the selective oxidation of aromatic alcohols in an oxygen environment, but also shows high photocatalytic redox activities under nitrogen atmosphere. A possible mechanism for the photocatalytic redox reaction in the coupled system was proposed. It is hoped that our current work could extend the applications of CdIn2S4 photocatalyst and provide new insights for selective transformations of organic compounds.

Catalytically active and chemically inert CdIn2S4 coating on a CdS photoanode for efficient and stable water splitting

Cadmium sulfide was popularly utilized as a light harvesting material for photoelectrochemical (PEC) water splitting, however, the drawback of poor durability limits its practical application. Herein, we show that a catalytically active and chemically inert cadmium indium sulfide (CdIn2S4) can improve the stability and even photocurrent of a CdS photoelectrode.

Microwave Synthesis and Photocatalytic Activity of Cadmium Indium Sulfide Nanocomposite

Nanocomposite of CdIn2S4 was synthesized by direct feeding microwave synthesis method, using indium nitrate, cadmium nitrate and thioacetamide as raw material, cetyltrimethyl ammonium bromide(CTAB) as surfactant. The crystal structure, morphology and the optical property of as-prepared sample were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) and Fluorescence spectra. The results showed that the as-prepared nanocomposite is hexagonal CdIn2S4. The SEM showed that the shape of these nanoparticles is irregular and looks like flake/sphere with some aggregation. The size of most of the aggregate is 100 to 300 nm. The photocatalytic activity of the as-prepared samples was studied by using degradation of methylene bule under visible light. The results show that the photocatalytic activity of CaIn2S4 photocatalyst was very well. When the catalyst was 1.0 g/L, C(H2O2) was 3 mL/L, after 120 min of the irradiation, the degradation rate of CdIn2S4 for methylene blue of 20 mg/L reached 86.06%.

(Photo)electrochemical analysis of electrosynthesized fibrous cadmium indium selenide (CdIn2Se4) thin films

Abstract Electrosynthesized cadmium indium selenide (CdIn 2 Se 4 ) thin films were (photo) electrochemically analyzed by current–voltage characteristics, photoresponse, speed response, electrochemical impedance study, and capacitance–voltage characteristics. The improved photoconversion efficiency of electrosynthesized CdIn 2 Se 4 thin film-based photoelectrochemical cell explained with the help of theoretical modeling of energy band diagram and equivalent circuit model of the impedance spectra of the photoelectrochemical cell.

Temperature and frequency characteristics of composites with semiconductor fillers

The paper describes the results of a study on the temperature and frequency dependences of the dielectric permeability and dielectric loss tangent of composite materials composed of low density polyethylene filled with cadmium sulfide (LDPE/CdS) and indium(III) selenide (LDPE/In2Se3) in the temperature range of 300–450 K and a frequency range of 0–1014 Hz. It is revealed that a variation in the filler content and the effect of external factors can yield novel composite materials with desired dielectric characteristics.

Silver Indium Telluride Semiconductors and Their Solid Solutions with Cadmium Indium Telluride: Structure and Physical Properties.

Ag0.8In2.4Te4 (= AgIn3Te5) and Ag0.5In2.5Te4 (= AgIn5Te8) form solid solutions with CdIn2Te4, which are interesting as materials for photovoltaics or with respect to their thermoelectric properties. The corresponding crystal structures are related to the chalcopyrite type. Rietveld refinements of high-resolution synchrotron powder diffraction data measured at K-absorption edges of Cd, Ag, In, and Te and electron diffraction reveal the symmetry as well as the element and vacancy distribution in Ag0.8In2.4Te4 (= AgIn3Te5)/Ag0.5In2.5Te4 (= AgIn5Te8) mixed crystals such as Ag0.25Cd0.5In2.25Te4 and Ag0.2Cd0.75In2.1Te4. All compounds of the solid solution series (CdIn2Te4)x(Ag0.5In2.5Te4)1-x exhibit the HgCu2I4 structure type (space group I4̅2m) with completely ordered vacancies but disordered cations. The uniform cation distribution and thus the local charge balance are comparable to that of CdIn2Te4. In contrast, Ag0.8In2.4Te4 (= AgIn3Te5) crystallizes in the space group P4̅2c with disordered cations and partially ordered vacancies. This is corroborated by bond-valence sum calculations and the fact that there is a Vegard-like behavior for compounds with 0.5 < x in the pseudobinary system (CdIn2Te4)x(Ag0.8In2.4Te4)1-x. Owing to the different structures, there is no complete solid solution series between CdIn2Te4 and AgIn3Te5. All compounds in this work are n-type semiconductors with a low electrical conductivity (∼1 S/m) and rather high absolute Seebeck coefficients (up to -750 μV/mK; 225 °C). Electrical band gaps (Eg) determined from the Seebeck coefficients as well as (more reliably) from the electrical conductivity range between 0.19 and 1.13 eV.

Cadmium indium selenide semiconducting nanofibers by single step electrochemical route

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

Temperature dependant physical properties of CdIn2O4 thin films grown by spray pyrolysis

Transparent conducting cadmium indium oxide films (CdIn2O4) were deposited on glass substrates at temperature of 350 and 400°C. The film structure and surface morphologies were investigated as a function of temperature by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD results showed the single phase formation of the material that revealed the presence of Cd2+ and In3+ in the inverse spinel related structure. The chemical compositional analysis of CdIn2O4 films was carried out by X-ray photoelectron spectroscopy (XPS). Room temperature photoluminescence (PL) measurements indicate that the annealed CdIn2O4 thin film exhibit blue shift effect. The optical band gap of CdIn2O4 film was increased from 3.08 to 3.2eV up to 400°C.

Photoelectric Properties of Pulse Electrodeposited CdIn2Se4 Films

Among II–III–VI group ternary compounds, Cadmium indium selenide (CdIn2Se4) is one of the interesting semiconductors due to its optical absorption property, band gap and low electrical resistance. CdIn2Se4 is a direct band gap semiconductor with an energy gap of 1.73 eV which make them interesting for solar cells through photoelectrochemical route. The material in thin film form can be obtained by electrodeposition, vacuum evaporation and spray pyrolysis. In this work, the pulse electrodeposition technique was used for the deposition of CdIn2Se4 films for the first time.CdIn2Se4 films were pulse electrodeposited at different duty cycles in the range of 6 – 50 %. The deposition potential was maintained at – 0.95 V(SCE). Titanium and conducting glass substrates were used as substrates. The films were deposited at 80°C. The precursors used were 0.1 M CdSO4, 0.25 M In2(SO4)2 and 5 mM SeO2 in diethylene glycol. Thickness of the films measured by Mitutoyo surface profilometer increased from 600 – 950 nm with increase of duty cycle.X-ray diffraction pattern recorded for CdIn2Se4 thin films prepared on titanium substrates revealed that the deposited films are polycrystalline with tetragonal structure with lattice constants (a = 5.77 Å; c = 11.59 Å). The diffraction peaks of tetragonal CdIn2Se4 with the lattice planes (101), (111), (112), (300), (311) and (104). All the peaks identified are from CdIn2Se4 and no additional lines corresponding to Cd, In and Se are present. The height of (111) peak increases with duty cycle, which indicates that the deposited films exhibits preferential orientation along (111) planes. It is also observed that the height of preferential peak is increased with duty cycle. The crystallite size of the deposited films are calculated using FWHM data and Debye Scherrer formula variedc from 15 – 40 nm.Composition of the films was studied by EDS analysis of Cd1.01In1.96Se4.03 for the films deposited at 50 % duty cycle which indicates the nearly stoichiometric composition.The band gap energy of CdIn2Se4 varied in the range of 1.97 eV – 2.16 eV as the duty cycle decreased. This variation is due to quantum size effects. The grain size of the films deposited at lower duty cycle is lower compared to the films deposited at higher duty cycles.The variation of photocurrent with light intensity of CdIn2Se4 films deposited at different duty cycles exhibited linear behaviour. The increase in photocurrent is attributed to an increase in the majority carrier concentration and/or an increase in impurity centers acting as traps for minority carriers. The variation of photocurrent with applied voltage in CdIn2Se4 films is also linear. Photosensitivity is the ratio of the increase in conductivity of the material in the presence of light to the conductivity in darkness It seems that some transitions that create additional free carriers effectively increase the free life time increasing the photosensitivity of the material. A plot of photosensitivity versus light intensity of CdIn2Se4 thin films is also linear. Thinner films exhibit moderate photosensitivity, whereas thicker films are found to exhibit higher photosensitivity. Crystallographical imperfections acting as trapping centers will enhance the photosensitivity, whereas the recombination centers decrease the photosensitivity.Single phase CdIn2Se4 films could be prepared by the pulse electrodeposition technique. Films with grain size in the range of 15 nm – 40 nm cane be prepared. Films with band gap in the range of 1.97 eV – 2.16 eV can be obtained.Photosensor studies indicated linear photocurrent – voltage and linear photocurrent – illumination characteristics showing that these films can be used in optoelectronic applications.

Chemical deposition of (311) textured CdIn2S4 thin films

We have successfully deposited cadmium indium sulphide (CdIn2S4) thin films by simple dip method using malonic acid as complexing agent. Variation of thickness with time and temperature were studied. Deposited samples were characterized by X-ray diffraction (XRD). The absorption, electrical and photoelectrochemical properties are also studied. The XRD analysis shows that the film samples are in cubic structure. The optical band gap energy was found to be 2.25 eV. Activation energy was found to be 0.511 and 0.018 eV for higher temperature and lower temperature respectively. For CdIn2S4 photoelectrode, the open circuit voltage and short circuit current are found to be 125 mV and 86 mA respectively. The calculation shows the fill factor is 33.38 %. The power conversion efficiency is found to be 1.22 %.