C-plane GaN Templates Research Articles

Pinpointing lattice-matched conditions for wurtzite ScxAl1−xN/GaN heterostructures with x-ray reciprocal space analysis

Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite ScxAl1−xN layers on (0001) GaN to be x = 0.14 ± 0.01. 100 nm thick ScxAl1−xN films (x = 0.09–0.19) were grown in small composition increments on c-plane GaN templates by plasma-assisted molecular beam epitaxy. The alloy composition was estimated from the fit of the (0002) x-ray peak positions, assuming the c-lattice parameter of ScAlN films coherently strained on GaN increases linearly with Sc-content determined independently by Rutherford backscattering spectrometry [Dzuba et al., J. Appl. Phys. 132, 175701 (2022)]. Reciprocal space maps obtained from high-resolution x-ray diffraction measurements of the (101¯5) reflection reveal that ScxAl1−xN films with x = 0.14 ± 0.01 are coherently strained with the GaN substrate, while the other compositions show evidence of relaxation. The in-plane lattice-matching with GaN is further confirmed for a 300 nm thick Sc0.14Al0.86N layer. The full-width-at-half-maximum of the (0002) reflection rocking curve for this Sc0.14Al0.86N film is 106 arc sec and corresponds to the lowest value reported in the literature for wurtzite ScAlN films.

Ultra-fast epitaxial growth of ZnO nano/microrods on a GaN substrate, using the microwave-assisted hydrothermal method

Well-aligned ZnO nano/micro-rods with identical crystallographic orientation were synthesized on a c-plane GaN template, using a microwave-assisted hydrothermal method at 50 °C for duration of 2 min. The ZnO nanorods exhibited true epitaxial growth, in contrast to most of the previously reported methods, which involve nucleation on a ZnO buffer layer pre-deposited on the substrate. Homogeneous in-plane alignment as well as the c-axis orientation were confirmed by X-ray diffraction measurements and TEM analysis. More importantly, in the photoluminescence spectra of the nanorods a strong, narrow excitonic emission and an extremely weak deep level emission were observed, indicating high optical quality. The diameter was controlled by adjusting pH of the solution used in the growth process. The main achievement of the research was the opportunity to obtain oriented, high quality ZnO nano/microrods, using a surprisingly quick, cheap, and safe growth process, without the use of toxic substances or ultra-high purity compounds.

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

We investigate designed InN/GaN superlattices (SLs) grown by plasma-assisted molecular beam epitaxy on c-plane GaN templates in situ by line-of-sight quadrupole mass spectroscopy and laser reflectivity, and ex situ by scanning transmission electron microscopy, X-ray diffraction, and photoluminescence (PL). The structural methods reveal concordantly the different interface abruptness of SLs resulting from growth processes with different parameters. Particularly crucial for the formation of abrupt interfaces is the Ga to N ratio that has to be bigger than 1 during the growth of the GaN barriers, as Ga-excess GaN growth aims at preventing the unintentional incorporation of In accumulated on the growth surface after the supply of InN, that extends the (In,Ga)N quantum well (QW) thickness. Essentially, even with GaN barriers grown under Ga-excess yielding to 1 monolayer (ML) thick QWs, there is a real discrepancy between the designed binary InN and the actual ternary (In,Ga)N ML thick QWs revealed by the above methods. The PL emission line of the sample with atomically abrupt interfaces peaks at 366 nm, which is consistent with the In content measured to be less than 10%.

Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies

GaN/AlGaN quantum wells (QWs) were grown by metal–organic vapor phase epitaxy (MOVPE) on c-, a-, m-, and (20.1)-plane GaN substrates obtained by the ammonothermal method in the same MOVPE process, i.e. a process with growth parameters optimized for c-plane GaN templates. The structural properties of GaN/AlGaN QWs were carefully investigated by high angle annular dark field scanning transmission electron microscopy. Sharp GaN/AlGaN interfaces were seen for QWs grown on the c-, a-, and m-plane GaN substrates, but very rough interfaces with {1-100} and {1-101} facets were observed on the (20.1)-plane GaN substrate. In addition, the Al-rich region of AlGaN and GaN transition was identified for each of the GaN/AlGaN QW samples deposited in this process. The thickness and composition of this region varied with the crystallographic orientation of GaN substrates.

Growth and characterization of In0.17Al0.83N thin films on lattice-matched GaN by molecular beam epitaxy

InxAl1−xN thin films were grown on c-plane GaN templates by plasma-assisted molecular beam epitaxy. The effect of the growth temperature on the quality and surface morphology of these InxAl1−xN thin films were examined. The alloy composition, crystalline quality and surface morphology were characterized by high-resolution x-ray diffraction, scanning electron microscopy, and atomic force microscopy. A very narrow growth temperature for high-quality In0.17Al0.83N was identified between 520 and 530°C. At the optimized growth temperature around 525°C, the In0.17Al0.83N thin films on lattice-matched GaN templates were grown with excellent crystalline quality. The value of full width at half maximum of the In0.17Al0.83N (0002) peak is 249.6arcsec, which is among the best results reported to date. The root mean square surface roughness of the In0.17Al0.83N thin films is as low as 0.47nm.

In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy

The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature.

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

We demonstrate InxGa1−xN/GaN light emitting diode structures with different sets of multifacet semipolar formation grown laterally on m-plane sidewalls formed by stripe patterning on preliminary grown c-plane GaN template. It was found that regrowth on shallow side walls within the GaN template resulted in a single semipolar (11¯01) facet, while deeper side walls led to multifacet semipolar formation. Very deep etching through the entire GaN template reaching the underlying sapphire substrates resulted in a combination of semipolar (11¯01) and nonpolar (11¯00) facets. The results indicate that the depth of the groove patterning can be used as a tool for controlling the set of semipolar facet formation. In addition, the growth rate in different crystallographic directions was studied and possible factors affecting the growth rates are discussed.

GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures

We present LED structures with embedded semipolar {101¯1} quantum wells based on 2-inch c-plane GaN templates grown on c-plane sapphire substrates. Using selective area epitaxy, we achieved periodic GaN stripe structures with triangular cross-section with dimensions of a few 100nm on continuous areas of several cm2. These structures exhibit semipolar side facets on which GaInN quantum wells with reduced piezoelectric fields have been deposited. The small dimensions of these structures allow complete embedding by GaN cladding layers eventually resulting in a flat c-plane surface. Consequently, our approach allows conventional device processing to be applied. Structural, optical, and electrical characterization is presented and the influence of mask material and pattern on the performances of LED structures is investigated.

Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies

This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry.

Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN

We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger full-width at half-maximum are observed for MQWs grown on an a-plane GaN template compared with a c-plane GaN template, despite the same growth conditions used. A growth model based on the atomic configuration of the growing surfaces is proposed to explain the difference in optical emission properties and indium incorporation between a-plane and c-plane MQWs.

NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy

N-rich growth by NH3-based molecular beam epitaxy was investigated for intermediate-temperature GaN and InGaN on c-plane GaN templates. The dependences of growth mode and surface morphology on group-V overpressure, In/Ga ratio, and temperature were explored with atomic force microscopy and high resolution x-ray diffraction. Extension to an “ultra-NH3-rich” regime of very high NH3-flows showed a decreased growth rate and increased In-content for InGaN alloys for constant group III source fluxes. Rapid modulation of NH3 overpressure, growth rate, and substrate temperature has enabled the growth of high quality, many-period InGaN/GaN superlattices, while suppressing morphological instabilities and subsequent stress relaxation.

Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods

Nanostructured hexagonal InN overlayers were heteroepitaxially deposited on vertically oriented c-axis GaN nanorods by metal-organic chemical vapor deposition. InN overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on GaN nanorods, showing a great difference from the conventional InN growth on (0001) c-plane GaN template. The surface of InN overlayers is mainly composed of several specific facets with lower crystallographic indices. The orientation relationship between InN and GaN lattices is found to be [0001]InN∥[0001]GaN and [11̱00]InN∥[11̱00]GaN. A strong photoluminescence of InN nanostructures is observed.

Epitaxial Growth of InN Films by Molecular-Beam Epitaxy Using Hydrazoic Acid (HN3) as an Efficient Nitrogen Source

Epitaxial InN films have been successfully grown on c-plane GaN template by gas-source molecular-beam epitaxy with hydrazoic acid (HN3) as an efficient nitrogen source. Results in residual-gas analyzer show that the HN3 is highly dissociated to produce nitrogen radicals and can be controlled in the amounts of active nitrogen species by tuning HN3 pressure. A flat and high-purity InN epifilm has been realized at the temperature near 550 degrees C, and a growth rate of 200 nm/hr is also achieved. Moreover, the epitaxial relationship of the InN(002) on the GaN(002) is reflected in the X-ray diffraction, and the full-width at half-maximum of the InN(002) peak as narrow as 0.05 degrees is related to a high-quality crystallinity. An infrared photoluminescence (PL) emission peak at 0.705 eV and the integrated intensity increasing linearly with excitation power suggest that the observed PL can be attributed to a free-to-bound recombination.

Al incorporation in AlGaN on [formula omitted] and (0 0 0 1) surface orientation

Epitaxial lateral overgrowth of gallium nitride with ( 1 1 2 ¯ 2 ) facets was realized by metal organic chemical vapor deposition on GaN/sapphire (0 0 0 1) substrates with SiO 2 stripe mask. Then AlGaN layers were grown on ELO GaN and on c-plane GaN templates simultaneously. The variation of the aluminum compositions was studied by photoluminescence spectroscopy, secondary ion mass spectrometry (SIMS) and XRD. Different aluminum content of 0.07 and 0.11 were obtained on ( 1 1 2 ¯ 2 ) facet AlGaN layers and on (0 0 0 1) facet AlGaN layers, respectively. Compare to the c-plane AlGaN layer, it is found that polycrystalline AlGaN is grown on SiO 2 layer and has higher Al content. These results indicate that aluminum incorporation depends significantly on the surface orientation.