Abstract
We present LED structures with embedded semipolar {101¯1} quantum wells based on 2-inch c-plane GaN templates grown on c-plane sapphire substrates. Using selective area epitaxy, we achieved periodic GaN stripe structures with triangular cross-section with dimensions of a few 100nm on continuous areas of several cm2. These structures exhibit semipolar side facets on which GaInN quantum wells with reduced piezoelectric fields have been deposited. The small dimensions of these structures allow complete embedding by GaN cladding layers eventually resulting in a flat c-plane surface. Consequently, our approach allows conventional device processing to be applied. Structural, optical, and electrical characterization is presented and the influence of mask material and pattern on the performances of LED structures is investigated.
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