Burstein-Moss Shift Research Articles

Explication of the luminescent and optically active RE3+ triply-doped silica phosphate glass films for photonic applications

The multi-component silicate glass films triply-doped with Er3+/Yb3+/Nd3+ were fabricated by spin coating technique. X-ray diffraction revealed a cristobalite phase in the glasses doped above 0.6 mol% of Nd3+. The transparency of the films increases with the addition of the co-dopant, due to the increase in optical band gap by the Burstein-Moss shift. The high value of the correlated color temperature of the blue emission indicates enhanced visual perception, suggestive of cool blue film lasers. The red emission from upconversion exhibits potentiality for flat display panels. The gain cross-section of the glass with 0.6 mol% of Nd3+ was 13.54 ×10−20 cm2 which makes it ideal for NIR film lasers in the S-band region. The Inokuti-Hirayama model predicts luminescence quenching due to dipole-dipole interactions in the glasses co-doped beyond 0.6 mol% of Nd3+. The 4F9/2→4I13/2 transition observed in the films, suggests their suitability for O + E + S band NIR film lasers in telecommunication sectors.

Growth of Ta-doped SnO2 on GaN as a UV-transparent conducting electrode and band alignment properties of the heterojunction

GaN-based ultraviolet light emitting diodes (UV LEDs) have attracted considerable attention in recent years and are required in various applications such as healthcare, light illumination, and optical communication. However, the limited UV transparency of the electrodes like indium-doped tin oxide has hindered the external quantum efficiency of current UV LEDs. In this work, we present the growth of UV-transparent Ta-doped SnO2 (TTO) thin films on GaN as a promising UV-transparent electrode for LEDs. TTO thin films with a thickness of 200 nm exhibit optical transmission exceeding 80% at the wavelength of 300 nm, with a low resistivity of 2.5 × 10−4 Ω·cm and a low contact resistance of 1.7 × 10−2 Ω cm2 to n-type GaN. High-resolution x-ray photoemission spectra were employed to reveal insight into the electronic structure of TTO and the interfacial band alignment of TTO/GaN heterojunction. The wide optical bandgap (∼4.6 eV) and high UV transparency of TTO films stem from a significant Burstein–Moss shift due to degenerate doping, giving rise to metal-like characteristics and a small barrier height at the interface of TTO/GaN. These findings imply the origin of low contact resistivity of TTO to n-type GaN and may be applicable to the development of UV-transparent electrodes of optoelectronic devices.

Coexistence of the Band Filling Effect and Trap-State Filling in the Size-Dependent Photoluminescence Blue Shift of MAPbBr3 Nanoparticles.

The size-dependent photoluminescence (PL) blue shift in organometal halide perovskite nanoparticles has traditionally been attributed to quantum confinement effects (QCEs), irrespective of nanoparticle size. However, this interpretation lacks rigor for nanoparticles with diameters exceeding the exciton Bohr radius (rB). To address this, we investigated the PL of MAPbBr3 nanoparticles (MNPs) with diameters ranging from ~2 to 20 nm. By applying the Brus equation and Burstein-Moss theory to fit the PL and absorption blue shifts, we found that for MNPs larger than rB, the blue shift is not predominantly governed by QCEs but aligns closely with the band filling effect. This was further corroborated by a pronounced excitation-density-dependent PL blue shift (Burstein-Moss shift) at high photoexcitation densities. Additionally, trap-state filling was also found to be not a negligible origin of the PL blue shift, especially for the smaller MNPs. The time-resolved PL spectra (TRPL) and excitation-density-dependent TRPL are collected to support the coexistence of both filling effects by the high initial carrier density (~1017-1018 cm-3) and the recombination dynamics of localized excitons and free carriers in the excited state. These findings underscore the combined role of the band filling and trap-state filling effects in the size-dependent PL blue shift for solution-prepared MNPs with diameters larger than rB, offering new insights into the intrinsic PL blue shift in organometal halide perovskite nanoparticles.

Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs.

Single layer graphene (SLG) was synthesized via high-quality chemical vapor deposition (CVD) on high-quality copper and subsequently transferred onto SiO2 and on n-GaAs substrates with varying doping electron concentrations (n = 1016, 1017, 5 × 1017, 1018, and 5 × 1018cm-3). The n-GaAs substrates were grown by molecular beam epitaxy. The optical properties of the SLG were investigated through photoluminescence (PL) and Raman spectroscopy measurements. Carrier concentration n or p and Fermi energy (EF) values in SLG were determined both before and after the transfer onto n-GaAs, and these findings were validated through PL studies. The Raman spectroscopy results indicated an increase in the transfer of electrons from n-GaAs to SLG as the doping electron density in n-GaAs increased. PL analysis revealed a significant change in the bandgap energy (Eg) of n-GaAs due to bandgap narrowing and the Burstein-Moss shift. Our data enable us to determine the energy band diagrams. Upon aligning the energy bands, an increase in transferred carrier density is accompanied by changes in Fermi energies and an increase in the potential barrier (∆U). The increase in ∆U is of significant interest to ensure that charges are directed more efficiently toward the cell's electrical contacts in the case of photovoltaic application. There, they can contribute significantly to the generated electric current, thereby enhancing the performance of a cell. Our results can provide insights into the interaction in graphene-based heterostructures and aid in selecting the best parameters for developing new advanced devices.

Excited-State Dynamics of MAPbBr3: Coexistence of Excitons and Free Charge Carriers at Ultrafast Times.

Methylammonium lead tribromide perovskite (MAPbBr3) is an important material, for example, for light-emitting applications and tandem solar cells. The relevant photophysical properties are governed by a plethora of phenomena resulting from the complex and relatively poorly understood interplay of excitons and free charge carriers in the excited state. In this study, we combine transient spectroscopies in the visible and terahertz range to investigate the presence and evolution of excitons and free charge carriers at ultrafast times upon excitation at various photon energies and densities. For above- and resonant band-gap excitation, we find that free charges and excitons coexist and that both are mainly promptly generated within our 50-100 fs experimental time resolution. However, the exciton-to-free charge ratio increases upon decreasing the phonon energy toward resonant band gap excitation. The free charge signatures dominate the transient absorption response for above-band-gap excitation and low excitation densities, masking the excitonic features. With resonant band gap excitation and low excitation densities, we find that although the exciton density increases, free charges remain. We show evidence that the excitons localize into shallow trap and/or Urbach tail states to form localized excitons (within tens of picoseconds) that subsequently get detrapped. Using high excitation densities, we demonstrate that many-body interactions become pronounced and effects such as the Moss-Burstein shift, band gap renormalization, excitonic repulsion, and the formation of Mahan excitons are evident. The coexistence of excitons and free charges that we demonstrate here for photoexcited MAPbBr3 at ultrafast time scales confirms the high potential of the material for both light-emitting diode and tandem solar cell applications.

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

To investigate the carrier recombination processes in GaN crystals grown by the low-pressure acidic ammonothermal (LPAAT) method, the photoluminescence (PL) spectra and PL lifetimes of LPAAT GaN crystals grown on acidic ammonothermal (AAT) GaN seed crystals were correlated with the growth polarity and species/concentration of point defects. The PL spectra of LPAAT GaN grown toward the (0001¯) direction (−c region), which provided the highest growth rate, exhibited a predominant near-band edge (NBE) emission. Neither bandgap narrowing nor Burstein–Moss shifts due to high concentration residual impurities were observed in the NBE emissions, indicating higher purity than the previously reported AAT GaN crystals. In addition, strain-induced energy shift or energy broadening of excitonic emission peaks was not observed, indicating excellent crystal coherency. Because of the reduced concentration of midgap recombination centers, a record-long room-temperature PL lifetime for the NBE emission of ammonothermal GaN (40 ps) was obtained from the −c region. Meanwhile, the PL spectra also exhibited the yellow and blue luminescence bands originating from particular deep-state radiative recombination centers. The major vacancy-type defects acting as midgap recombination centers are identified as vacancy complexes comprising a Ga vacancy (VGa) and a few N vacancies (VN), namely, VGa(VN)n buried by H and/or O, where n is an integer. Further reduction of such defect complexes will allow less compensated stable carrier concentration in the LPAAT GaN crystals.

Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy

The epitaxial growth of heavily Ge‐doped GaN films using pulsed sputtering deposition (PSD) on AlN (0001)/sapphire substrates is presented and the correlations among their structural, electrical, and optical properties are investigated. High‐quality Ge‐doped PSD‐GaN films are grown with electron concentrations of 0.33–4.4 × 1020 cm−3. Notably, cathode luminescence spectra reveal the absence of defect‐induced emissions associated with Ga vacancies (2.3–2.4 eV), consistent with the high electron mobilities of the films. As the electron concentration increases, the optical bandgap also increases. This correlation can be explained by combining the theoretical formulas for the Burstein–Moss shift and the bandgap renormalization effects. Remarkably, the optical bandgap reaches 3.84 eV at 4.4 × 1020 cm−3 carrier concentration, marking the highest value reported for the optical bandgap of GaN. These results indicate the potential of heavy Ge doping in GaN via PSD for applications in highly transparent conductive layers and tunneling junctions within GaN‐based optoelectronic devices.

Theory of Burstein–Moss effect in semiconductors with anisotropic energy bands

Abstract We study the peculiarities of the Burstein–Moss shift employing two-band model with an anisotropic valence band. There is a long wave tail which has a convex or concave shape depending on the ratio between the longitudinal and transverse hole masses. The width of this anisotropy-induced tail is temperature-independent and increases with increasing electron concentration and difference between the hole masses. This width also does not depend upon the value of the energy gap. Having experimentally evaluated the tail width and the position of the break in the optical absorption curve, one can deduce the values of the reduced hole masses.

DFT insights into LaFeO3 with Mn substitution: A promising path to energy-efficient magneto-optical applications.

In recent years, the demand for electronic materials has significantly increased, driven by industrial needs and the pursuit of cost-efficient alternatives. This comprehensive study investigates the effects of Mn substitution on LaFeO3 through the implementation of the GGA approach in density functional theory. The research findings demonstrate remarkable consistency with the experimental outcomes reported in the existing literature pertaining to the studied compounds. However, this study unveils novel insights into the mechanical and optical characteristics of the doped structures, which have not been previously reported. The structural stability is rigorously examined through multiple stability criteria, encompassing structural optimization, tests of elastic stability, and enthalpy of formation calculations. Furthermore, the electronic and optical properties of the compounds exhibit exceptional improvements in conductivity and reflectivity as a result of the doping process. The band structure analysis reveals the presence of a Moss-Burstein shift. Investigation of the magnetic properties indicates an increase in the magnetic moment value due to the Fe-Mn degeneracy resulting from increased Mn content. Mechanical analysis of the elastic moduli B, G, and Y demonstrates an enhanced strength and metal-like conductivity, attributed to the induced anharmonicity. Moreover, the internal strain factor suggests a higher degree of bond flexibility, implying potential applications of these compounds in flexible electronics.

Studying the structural, optical, and electrical characteristics of Zn2SnO4 films using a direct current magnetron sputtering method

In this study, the characteristics of ZTO films are examined by varying the substrate temperature at an Ar ambient pressure of 3 × 10−3 Torr. The elemental content of Zn, Sn, and O in the generated Zn2SnO4 films was confirmed using X-ray dispersive and X-ray photoelectron spectroscopy. The result reveals that the Zn/Sn ratio for the film formed at 300 °C reaches 2. The (222) and (311) lattice planes validated the cubic inverse spinel structure of ZTO films in the X-ray diffraction investigation. Atomic force microscopy was used to measure surface roughness, and the RMS rose in a range of 1.34–4.79 nm as the substrate temperature increased. Field-emission scanning electron microscopy revealed that the average crystal grain size grew in the region of 60–95 nm as the substrate temperature increased. The UV–vis absorption edge shift validates the Burstein-Moss shift rule, with a bandgap of ZTO-300 achieving the greatest value of 3.75 eV, corresponding to the largest carrier concentration. Electrical characteristics were investigated using Hall measurements. Film conductivity was primarily determined by the electron concentration or the presence of oxygen vacancies. The lowest resistivity measured was 5.4 × 10−3 Ω cm, which corresponded to an electron concentration of 8.57 × 1019 cm−3. The current-voltage characteristics of the ZTO/p-Si junction proved its rectifiable quality. Because of the low resistivity of the ZTO-300 sample, the ZTO-300/p-Si heterojunction has the largest photocurrent (4.72 10−3 A), making it suitable for use in optoelectronic devices.

Structural elucidation by Raman spectroscopy and analysis of luminescence quenching by the Inokuti-Hirayama model in the Pr3+ doped multi-component silicate photonic films

Thin films of multi-component silica glasses doped with Ca2+ and Pr3+ modifiers were fabricated by the spin coating technique. Surface micrographic images extracted by the Field Emission Scanning Electron Microscope revealed a homogeneous texture of the films. Detailed structural analysis by Fourier Transform Raman spectroscopy confirmed the existence of Si-O-Si and polyphosphate groups in the glass matrix. The Burstein-Moss shift was evidenced with doping, by an increase in the band gap of the glass films, evaluated by Tauc’s plots. The films exhibit red and near infra-red emissions (NIR), corresponding to the transitions: 3P0→3F2 and 3P0→3F4 respectively. The decay analysis by the Inokuti-Hirayama (I-H) model validated the contributions of multi-polar interactions particularly that of dipole-quadrupole mechanisms, leading to significant quenching in the highly doped film. The energy transfer efficiency between the sensitizer and activator ions, determined by the formulations of the model was 51.8 %. The decreasing lifetime of the metastable state observed in the glass films could be considered to be prospective for NIR waveguide lasers and red laser sources for optical display screens.

Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering

Manganese-doped indium tin oxide (ITO) thin films (0–12.8 at% Mn) were deposited by DC magnetron sputtering. The structural, electrical, and optical properties of the films were studied. Optical characterization was emphasized and included ellipsometry, transmission, and photoluminescence (PL) measurements. Features of the energy band structure of ITO and Mn-ITO were extracted from PL spectra and Tauc analyses of absorption data. We concluded that the fundamental bandgap of ITO is ∼2.8 eV. A separate deep valence band, ∼0.8 eV below the valence band maximum, was confirmed to be involved in higher energy optical absorption and emission transitions. Both of these observations were consistent with recent published theoretical studies and spectroscopic measurements (XPS, XES, etc). Mn addition was found to result in a decrease of the transition energies. Additionally, Burstein–Moss shifts were observed.

Efficient hydrogen storage in LiMgF3: A first principle study

The utilization of hydrogen energy as a sustainable and renewable energy carrier has sparked considerable interest, but effective storage remains a challenge. To address this, researchers have turned their attention to hydride materials, which offer safe and efficient hydrogen storage capacity. In this study, we employed density functional theory calculations to investigate the structural and optoelectronic properties of LiMgF3-xHx (x = 0, 1, 2, and 3) hydrides, aiming to gain insights into their potential role in hydrogen storage. The optimized lattice parameter decreases from 3.95 to 3.86 Å with the inclusion of hydrogen. Further, we analyzed the density of states and band structure of each LiMgF3-xHx (x = 0, 1, 2, and 3) perovskite hydride, which depicts the decreasing trend in the bandgap due to increasing concentration of H. The Burstein-Moss shift and bandgap renormalization effects have been determined to assess the shifting of the absorption edge, which results in the narrowing of the bandgap. Furthermore, optical parameters were examined within the range of 0–10 eV, demonstrating a significant redshift in the absorption spectra in the UV region. The alteration in the optical properties and bandgap reduction are discussed in detail. Among the various hydrogen insertions, LiMgH3 displayed the highest static refractive index [n (0) = 2.01] and dielectric function, exhibiting minimal losses in absorption. These results emphasize that LiMgH3 is a promising candidate for hydrogen storage applications. Interestingly, the gravimetric and volumetric hydrogen storage capacities improved significantly from 1.4 to 8.8 wt% and 26.93–86.59 g.H2/l, respectively, which is a consequence of the increasing concentration of hydrogen in the host compound. This work might provide a significant contribution to both present and future research on practical hydrogen storage applications.

Insights to Carrier-Phonon Interactions in Lead Halide Perovskites via Multi-Pulse Manipulation.

A fundamental understanding of the hot-carrier dynamics in halide perovskites is crucial for unlocking their prospects for next generation photovoltaics. Presently, a coherent picture of the hot carrier cooling process remains patchy due to temporally overlapping contributions from many-body interactions, multi-bands, band gap renormalization, Burstein-Moss shift etc. Pump-push-probe (PPP) spectroscopy recently emerges as a powerful tool complementing the ubiquitous pump-probe (PP) spectroscopy in the study of hot-carrier dynamics. However, limited information from PPP on the initial excitation density and carrier temperature curtails its full potential. Herein, this work bridges this gap in PPP with a unified model that retrieves these essential hot carrier metrics like initial carrier density and carrier temperature under the push conditions, thus permitting direct comparison with traditional PP spectroscopy. These results are well-fitted by the phonon bottleneck model, from which the longitudinal opticalphonon scattering time τLO , for MAPbBr3 and MAPbI3 halide perovskite thin film samples are determined to be 240 ± 10 and 370 ± 10 fs, respectively.

Nano cristobalite embedded Er3+ doped multi-functional silica phosphate composite glasses for optoelectronic applications

Composite silica-based glasses were synthesized with varying concentrations of Er3+ by sol-gel route. The presence of alkali sodium ions reoriented the silica tetrahedra, eventually forming the cristobalite phase in the glasses. The addition of Er3+ reduces the crystallite size from 23.8 nm to 6.9 nm, while retaining the fractional ceramic attribute for effectuating mechanical stability and ductility. Band gap energy increases with Er3+ doping by the principles of the Burstein-Moss shift, increasing transmittance to 90% in the glasses. The density of the glasses increases with erbium content, with a subsequent increase in ionic bonding as validated by the metallization criterion. Judd OFelt (JO) parameters were evaluated from the oscillator strengths of absorption transitions, identifying decreasing covalency in the glass systems. Broad bandwidth and lifetime of 79.9 nm and 6.2 ms respectively were obtained for near-infrared (NIR) transmission at 1.47 μm, suitable for an S-band telecommunication window. The material has potential red lasing performance corresponding to the transition: 4F9/2→4I15/2. Low dielectric constants and decreasing activation energy of the glass material at higher frequencies, as derived from Arrhenius plots, is suggestive of a cost-effective inter-layer dielectric substrate for microwave signal propagation. This could be favorably capitalized for micro-fabrication in integrated electronic industries, employing the Low-Temperature Co-fired Ceramic (LTCC) technology as a strategic alternative to the ceramic substrates devised otherwise using high sintering temperatures.

Elucidating the effect of Pb and Ba substitution in SrTcO3 for advanced radioactive semiconducting applications

In this work, lead (Pb) and barium (Ba) substitution in SrTcO3 (STO) has been studied in detail using density functional theory. The structural stability was tested using optimization, enthalpy of formation and tolerance factor. The structure of SrTc(1−x)ZxO3 for (Z = Ba and Pb; x = 0, 0.25, 0.50 and 0.75) is found to be thermodynamically stable and thus can be made and studied experimentally, in which 25% Ba is the most stable form with ΔH = − 25.43 eV. In electronic properties, the band analysis is performed using PBE-GGA functional and found to follow the Moss–Burstein shift for the studied compounds, while DOS and contour plots have shown mixed p–d hybridization among the constituent elements, which indicates a mixing of covalent and ionic bond between its content atoms. The magnetic properties revealed the existence of weak ferromagnetism which is found to decrease (6.45, 6.02, 6.00 μB) with the increase of Pb content in STO while it increases to (0.04, 5.24, 6.89 μB) for the Ba substitution. Ba substitution shows good electrical conductivity. The optical analysis has shown a high reflectivity value for visible light (especially for 50% Ba with R(0) = 91.3%) and high conductivity σ(ω) (especially for 50% Ba with 12.6 × 103/Ω cm) value in the UV region which suggests the ability of these materials to be used as optical reflectors to prevent radiations and as non-radioactive photocatalysis and optoelectronic sensors.

Reformed dielectric features in single phase orthorhombic nickel vanadate complex oxides and the significance of the lattice dynamics in the optoelectrical features

V(1-x)2Ni3xO5-δ compounds are prepared by high-temperature solid-state reactions for mole fractions x = 0.04, 0.05, and 0.06. Micro-Raman spectrum with an excitation wavelength of 540 nm reveals 12 well-resolved phonon modes corresponding to the orthorhombic alpha-polymorphic phase of Vanadium Pentoxide and an extra vibrational mode excited by the tetravalent vanadium cation. A sharp absorption edge is observed from 500 nm to 650 nm in the diffuse reflectance spectrum with the rate of absorption increasing slightly, directly proportional to the x value. Kubelka-Munk plots reveal band gap reduction due to the negative Moss-Burstein shift that is attributed to the Ni2+ occupancy at the lattice sites creating electron deficiency. Frequency-dependent AC conductivity, studied in the frequency range 1 KHz to 1 MHz at room temperature exhibited DC-like conductivity in the low-frequency region, and the Jonsher Power Law fit gives the σdc values increasing with Ni ion concentration. AC conductivity at 1MHZ shows an elevation from 1.6 × 10−03 Sm−1 through 4.8 × 10−03 Sm−1 reaching 13.6 × 10−03 Sm−1 by increasing the concentration of Ni2+ ions. The dielectric constant at 250 °C, is observed to increase from 395, through 1447 to 2614, for mole fractions 0.04,0.05 and 0.06 respectively making this multivalent vanadate system a potential candidate for optoelectric and solid oxide fuel cell applications.

Impact of fluorine and chlorine doping on the structural, electronic, and optical properties of SnO2: first-principles study

In this work, we carried out in-depth study of the structural, electronic, and optical properties of intrinsic, fluorine (F)- and chlorine (Cl)-doped SnO2, using a pseudo-potential plane-wave scheme in the framework of the density functional theory. We found that the substitution of oxygen by F or Cl elements slightly modified the crystalline parameters without altering the stability of SnO2 compounds. The doping of tin oxide by these two halogens is confirmed by the displacement of the Fermi level position to the conduction band. Consequently, the doped materials are strongly degenerated as illustrated by the Moss-Burstein shift: 2.310 and 2.332 eV for F:SnO2 and Cl:SnO2, respectively. On the other hand, the density of states and Mulliken population analysis show that the covalent character of Sn–O bond is maintained after doping, while Sn–X (X = F or Cl) bond reveals an ionic nature. In terms of optical properties after doping, intrinsic SnO2 exhibits low absorption, while the doped ones are transparent in the visible range, making them more efficient in photovoltaic applications. Moreover, in the ultraviolet (UV) scale, pure and doped tin oxide compounds show better absorption, which may be beneficial for use in devices of protection against UV light and UV absorbers or sensors. Finally, the plasma frequencies of 28.22, 29.16, and 27.67 eV for pure, F-, and Cl-doped SnO2, respectively, were obtained.

Multifunctional praseodymium-doped composite silica glasses for UV shielding and photonic applications

Silica phosphate glasses strengthened with a calcium oxide modifier and doped with different concentrations (0%, 0.5%, 1%, 1.5 mol%) of praseodymium (Pr3+) were synthesized by a sol–gel method. The absence of sharp peaks in the X-ray diffraction spectra confirms the noncrystallinity of the glasses. Higher doping indicates increasing optical bandgaps due to Burstein–Moss shift, which also reflects on structural disorders at the absorption tails, as validated by Urbach’s rule. The density increases with a subsequent decrease in oxygen-packing density, proving the mechanical and chemical stability of the glasses. The composite glasses are multifunctional with marked absorption at 280 nm predicting their purpose as UV shielding films. Luminescence corresponding to the intra 4f transition, in the infrared region, with high transmission and low reflection losses suggests the use of the synthesized glass material for S-band telecommunications, while the radiative process involving yields a predominant red laser source. Commission International de l’Eclairage color coordinates observe warmer red emission corresponding to a correlated color temperature of 3200 K. The composite silica phosphate glass systems evidence the effective role of Pr3+ for photonic applications.

Modulating the Combinatorial Target Power of MgSnN2 via RF Magnetron Sputtering for Enhanced Optoelectronic Performance: Mechanistic Insights from DFT Studies.

The unique structural features of many ternary nitride materials with strong chemical bonding and band gaps above 2.0 eV are limited and are experimentally unexplored. It is important to identify candidate materials for optoelectronic devices, particularly for light-emitting diodes (LEDs) and absorbers in tandem photovoltaics. Here, we fabricated MgSnN2 thin films, as promising II-IV-N2 semiconductors, on stainless-steel, glass, and silicon substrates via combinatorial radio-frequency magnetron sputtering. The structural defects of the MgSnN2 films were studied as a function of the Sn power density, while the Mg and Sn atomic ratios remained constant. Polycrystalline orthorhombic MgSnN2 was grown on the (120) orientation within a wide optical band gap range of ∼2.20-2.17 eV. The carrier densities of 2.18× 1020 to 1.02 × 1021 cm-3, mobilities between 3.75 and 2.24 cm2/Vs, and a decrease in resistivity from 7.64 to 2.73 × 10-3 Ω cm were confirmed by Hall-effect measurements. These high carrier concentrations suggested that the optical band gap measurements were affected by a Burstein-Moss shift. Furthermore, the electrochemical capacitance properties of the optimal MgSnN2 film exhibited an areal capacitance of 152.5 mF/cm2 at 10 mV/s with high retention stability. The experimental and theoretical results showed that MgSnN2 films were effective semiconductor nitrides toward the progression of solar absorbers and LEDs.