Dislocation Bundles Research Articles

Study on the Deformation Behavior of Two Phases during the Low Cycle Fatigue of UNS S32750 Duplex Stainless Steel.

In this paper, the deformation behavior of UNS S32750 (S32750) duplex stainless steel during low cycle fatigue was studied by controlling the number of cycles. The microstructure of the specimens under different cycles was characterized by optical microscope (OM), scanning electron microscope (SEM), electron backscatter diffraction (EBSD), and transmission electron microscope (TEM). The microhardness of the two phases was measured by a digital microhardness instrument. The results showed that the microhardness of ferrite increases significantly after the first 4000 cycles, while the austenite shows a higher strain hardening rate after fatigue fracture, and the microhardness of ferrite and austenite increases by 23 HV and 87 HV, respectively. The two-phase kernel average misorientation (KAM) diagram showed that the continuous accumulation of plastic deformation easily leads to the initiation of cracks inside the austenite and at the phase boundaries. The evolution of dislocation morphology in the two phases was obviously different. With the increase in cycle number, the dislocation in ferrite gradually transforms from dislocation bundles and a dislocation array to a sub-grain structure, while the dislocation in austenite gradually develops from dipole array to an ordered Taylor lattice network structure.

Research on deformation behaviors at different temperatures of lean duplex stainless steel S32101 produced by direct cold rolling process

In this paper, the mechanical properties, work hardening characteristics and deformation mechanism of lean duplex stainless steel (LDSS) S32101 produced by direct cold rolling were studied under different temperature conditions. The yield strength (YS) and tensile strength (TS) of S32101 decreased with the increase of deformation temperature, while the elongation increased first and then decreased. The TS of S32101 at −70 °C was 1052.6 MPa, the elongation remained 57.2%, and the product of strength and elongation (PSE) was as high as 60.2 GPa·%, which was mainly due to the synergistic strengthening of transformation induced plasticity (TRIP) and twinning-induced plasticity (TWIP) effects in austenite at cryogenic temperatures. The efficiency of grain refinement at cryogenic temperature was improved by TRIP effect and deformation twins (DTs), indicating that it had the potential to be applied at low temperature (−70 ∼ −30°C). Moreover, the high density nanotwins and the strong interaction between the dislocation and nanotwin bundles also contributed to strain hardening at low temperatures and thus better comprehensive mechanical properties could be achieved.

Surface outflow effect on dislocation structures in micrometer-sized metals

Dislocations in metals often multiply and agglomerate into quasi-ordered structures with various morphologies in cyclic loading experiments. Specifically in face-centered cubic metals, the shapes of dislocation clusters change from dislocation bundle structures (called veins) to ladder-like periodic wall structures at a threshold of the applied shear strain that coincides with the fracture initiation threshold. In these ladder-like structures, the interval between adjacent walls is 1 or 2μm, regardless of the material dimensions. The robustness of such micrometer-sized wall intervals implies the impossibility of forming ladder-like structures in micrometer-sized metals. Nonetheless, the kind of dislocation structure that will occur is unclear because of a lack of knowledge about small-scale metal fatigue. In this study, we theoretically speculate the dislocation structures formed in micrometer-sized metals using differential equations that describe the reaction and diffusion of dislocations in the fatigue process. We find that micrometer-sized metals form few-walled structures due to the outflow of dislocations from their free surfaces, even under the parameter conditions under which vein structures form in macroscopic metals. The results indicate that the fracture initiation limit can be decreased by reducing the system size, which contradicts the well-established “smaller is stronger” consensus regarding the mechanics of small-volume single crystals.

Temperature Effect on the Deformation Behavior in Nanocrystalline Magnesium under Compression: An Atomistic Study

The classic molecular dynamics (MD) simulation approach has been used to investigate the microstructure change in polycrystalline magnesium (Mg) during compressive deformation at various temperatures. At low temperatures, there exists a competition between the sliding of Shockley partial dislocation (SPD) and perfect <a> dislocation. Abundant dislocation behaviors such as dislocation bundle and double cross slipping are observed. With a temperature increase, the dislocation sliding is hindered by the newly formed grain boundaries (GBs). The grain reorientation should be the compensatory mechanism for plastic deformation at high temperatures. Furthermore, dynamic recrystallization (DRX) is found at the highest temperature investigated. For all the temperature cases studied, twinning is unsensitive against applied compressive stress. The results of this work may help to understand the temperature effect on the mechanism in polycrystalline Mg under compressive deformation.

Studies of Dislocations in Type Ib, Type IIa HPHT and CVD Single Crystal Diamonds

In this review, the X-ray topography results of various types of single crystal diamonds (SCDs) are reported. Dislocations and dislocation bundles are present in all types of SCDs, the only exception being type IIa high-pressure, high-temperature (HPHT) SCDs. The technology of growing HPHT type IIa SCDs has advanced to a level where the samples show almost no dislocations or dislocation bundles. However, very few groups appear to have perfected the process of HPHT growth of type IIa SCDs. There appears to be a characteristic difference in the dislocations present in type Ib HPHT and chemical vapor deposited (CVD) SCDs. The dislocations in CVD SCDs are mostly in aggregate form, while in HPHT type Ib diamonds there are line dislocations which propagate in <111> or <112> directions. The CVD SCDs growth appears to be in the early stage in terms of the control of dislocations and dislocation bundles, compared to other semiconductor wafers. The dislocations and dislocation bundles and aggregates in SCDs limit their applications in electronic and optical devices. For instance, high-power laser windows must have low dislocations and dislocation bundles. For electronic devices such as high-power diodes, dislocations reduce the breakdown voltage of SCDs, limiting their applications. The knowledge of dislocations, their identification and their origin are, therefore, of utmost importance for the applications of SCDs, be they HPHT or CVD grown.

Diamond dislocations analysis by X-ray topography

The dislocation identification method using X-ray topography by reflection mode geometry was applied to characterize IIa, Ib and highly B doped high pressure high temperature (HPHT) grown crystals. In both IIa and Ib crystals, dislocations are found to propagate in the <111> grown direction, with dominant vectors of [110] and [1-10], neither of which has no c-axis segment. For Ib crystal, many dislocations are also generated in the <112> and <121> directions, which are slightly tilted to <111>. It was confirmed that the dislocations in the same direction have the same Burgers vectors, but the dislocations are spread in broad area. A total of up to 20 HPHT crystals were measured and found to exhibit different dislocation distributions. This indicates an immature growth technique in terms of dislocation. Measurements of four chemical vapor deposition (CVD) substrates showed numerous dislocation bundles, making individual dislocation directions analysis impossible. CVD substrates suffer from an increase in dislocations due to CVD growth, resulting in poor diamond quality in terms of dislocation. XRT analysis on dislocations of epitaxial growth will be very important prior to CVD substrates analysis.

X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias

We observed dislocations in β-Ga2O3 Schottky barrier diodes (SBD) using synchrotron X-ray topography (XRT) and studied their behaviors under forward or reverse bias. Several representative dislocation types were identified by observing the dislocation lines and their Burgers vectors. After comparing the XRT images taken before and after the bias was applied, we found that the dislocations were not static but could glide and multiply under a reverse bias of −140 V for 5 min. This was frequently observed near the dislocation bundles emanating from the end of a screw-type b-axis dislocation that had a Burgers vector of b∥[010]. The glide belonged to the 〈010〉{001} slip system. The glide and multiplication occurred even when the dislocations were not directly located in the SBD area being electrically stressed. It is considered that the b-axis screw dislocations acted as pathways of leakage current that was the driven force for dislocation glide and multiplication.

Effect of volume fractions of gradient transition layer on mechanical behaviors of nanotwinned Cu

Heterogeneous nanostructured (HNS) materials, such as gradient and laminated nanostructured metals, possess superior mechanical properties with respect to their homogeneous counterparts. The additional strengthening mechanism of HNS is mainly attributed to the non-uniform plastic deformation induced by gradient transition layers (GTLs) between components. Here, we designed three gradient nanotwinned (GNT) Cu samples with different volume fractions of GTLs (fg) of 10%, 50% and 100% while the rule-of-mixture strength and overall structural gradient are constant to quantitatively reveal its effect on the extra strengthening behaviors. As fg increases, the yield strength is improved and the elastic to plastic stage is prolonged at small strain. Moreover, larger fg suppresses the strain localization and reduces nucleation of cracks at larger strain, accompanied by more widely distributed geometrically necessary dislocations (GNDs) and more bundles of concentrated dislocations (BCDs), thus improving the elongation. Stress partitioning analysis and numerical simulations show that the more widely-distributed GNDs at larger fg result in higher overall back stresses but hardly affect effective stresses, indicative of the origin of the improved strengthening. Such GND-distribution dominated strengthening mechanism paves a fundamental way for developing higher-performance HNS materials.

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

In this paper, we investigate, using X-ray Bragg diffraction imaging and defect selective etching, a new type of extended defect that occurs in ammonothermally grown gallium nitride (GaN) single crystals. This hexagonal “honeycomb” shaped defect is composed of bundles of parallel threading edge dislocations located in the corners of the hexagon. The observed size of the honeycomb ranges from 0.05 mm to 2 mm and is clearly correlated with the number of dislocations located in each of the hexagon’s corners: typically ~5 to 200, respectively. These dislocations are either grouped in areas that exhibit “diameters” of 100–250 µm, or they show up as straight long chain alignments of the same size that behave like limited subgrain boundaries. The lattice distortions associated with these hexagonally arranged dislocation bundles are extensively measured on one of these honeycombs using rocking curve imaging, and the ensemble of the results is discussed with the aim of providing clues about the origin of these “honeycombs”.

Dislocation-Mediated Oxygen–Ionic Conductivity in Yttria-Stabilized Zirconia

Yttria-stabilized zirconia (YSZ) has become an indispensable solid electrolyte material in modern solid oxide fuel and electrolysis cells (SOFCs/SOECs) as well as oxygen sensors. The oxygen ionic conductivity of YSZ is among the highest known so far. For energy efficiency optimization of SOFCs and lowering the high-temperature degradation of electrodes, the oxygen ionic conductivity needs to be further enhanced. This would allow for a reduction in application temperature. Despite extensive regular point defect-doping strategies, this key issue remains unsolved. Here, we investigate the role of mechanically induced dislocations (line-defects) on electrical conductivity and oxygen transport in bulk YSZ. An advanced mechanical deformation approach is employed to generate distinctly aligned dislocation-rich and -deficient regions. The in-depth electrical characterization of these regions exhibited highly conducting effects of dislocation-induced strain inside the bulk material. Furthermore, targeted oxygen tracer diffusion experiments prove enriched oxygen incorporation within the dislocation bundles. Therefore, the potential of mechanically induced dislocations is elucidated as a design element to tune the bulk ionic transport in YSZ.

Dislocation analysis of epitaxial InAsSb on a metamorphic graded layer using x-ray topography

Dislocations in compositionally graded virtual substrates and InAsSb epitaxial layers for long wavelength (8–12 μm) photodetectors have been investigated with high-resolution x-ray topography (XRT). By varying the imaging conditions, the properties of the virtual substrate and InAsSb could be individually characterized. We observe the formation of misfit dislocations near the interface predominantly along the (110) direction and with less relaxation along the (1–10) direction. The misfit dislocations do not form a uniform array of dislocations but rather appear as dislocation bundles. Threading dislocation clusters, which could limit device performance, are observed along the misfit arrays with a density ∼1 × 105 cm−2 and a total averaged density of less than 1 × 106 cm−2. The prospects for using XRT for further optimization of virtual substrate and development of low defect bulk InAsSb layers are discussed.

Microstructure evolution, texture development, and mechanical properties of hot-rolled 5052 aluminum alloy followed by annealing

Aluminum alloys, especially the 5000 series, have drawn the attention of the transportation industry due to their lightweight and consequently reduced fuel consumption. In this regard, one of the major problems of this alloy is its low strength and ductility that can be solved using rolling and post-annealing. Accordingly, the present study concentrates on this issue. Microstructural images showed that the rolling process develops a lot of tangled and trapped dislocations in the sample, which gradually lead to the formation of dislocation bundles and networks. Subsequent annealing can produce a more homogeneous structure with clear grain boundaries and low dislocation density in the inner region of the grains. However, grain refinement efficiency through rolling is retained even after annealing. Initial and rolled Al5052 with the maximum intensity of 2.87 and 6.33 possess the lowest and highest overall texture. Also, post-annealing decreases the texture intensity to 6.33 and 4.87 at 150 and 200 °C, respectively. In this context, deformation texture components strengthen considerably after the rolling process due to the formation of shear bands, and they slightly weaken during heat treatment. Although the initial annealing of the as-received material does not cause discontinuous recrystallization during rolling, it may facilitate the material recovery before rolling. Post-annealing was found to decrease the improved effect of strength by rolling and increase the negative influence of ductility due to the inhibition of dislocation strengthening. The results showed that both dislocation density and the precipitation of Mg atoms are influential for electrical resistivity.

Dislocation-mediated electronic conductivity in rutile

It has been recently shown that doping-like properties can be introduced into functional ceramics by inducing dislocations. Especially for TiO2, donor and acceptor-like behavior were observed depending on the type of introduced mesoscopic dislocation network. However, these early reports could not fully elucidate the mechanism behind it. In this work, we rationalize the electrical properties of dislocations by targeted microelectrode impedance measurements, local conductivity atomic force microscopy, and Kelvin probe force microscopy on deformed single crystals, comparing dislocation-rich and deficient regions. With the help of finite element method calculations, a semi-quantitative model for the effect of dislocations on the macroscopic electrical properties is developed. The model describes the dislocation bundles as highly conductive regions in which respective space charges overlap and induce temperature-independent, highly stable electronic conductivity. We illustrate the mechanism behind unique electrical properties tailored by introducing dislocations and believe that these results are the cornerstone in developing dislocation-tuned functionality in ceramics.

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography.

X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method. Borrmann effect topography of anomalous transmission could be applied due to the low defect density of the substrates. It was possible to trace the process and growth history of the GaN crystals in detail from their defect pattern imaged. Microscopic defects such as threading dislocations, but also macroscopic defects, for example dislocation clusters due to preparation insufficiency, traces of facet formation, growth bands, dislocation walls and dislocation bundles, were detected. Influences of seed crystal preparation and process parameters of crystal growth on the formation of the defects are discussed.

On the Real‐Time Atomistic Deformation of the CoNiCrFeMn High‐Entropy Alloy with Gradient Structures

Molecular dynamic simulations are used to correlate gradient structure and mechanical properties of a CoNiCrFeMn high‐entropy alloy (HEA) by characterizing the structural evolution and dislocation substructures during tensile loading. The gradient distributions of deformation faults, dislocations, and grain size from the surface to the center of samples are explored in detail. Quantitative analysis indicates that improvement of strength is attributed to the high densities of dislocations and deformation faults in the grain interior. Moreover, the results reveal that the energy barrier for nucleation of deformation faults in the deformed layer of gradient HEA is higher than that of the ungradient sample. The high strength and work hardening of gradient HEA areattributed to the bundles of concentrated dislocations, which are distributed in grain interiors. This study helps to fundamental understanding of the deformation mechanisms of HEAs with gradient structure, which can be used to strength‐ductility trade‐off.

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Strain relaxed Si1−xGex buffer layers on Si(001) can be used as virtual substrates for the growth of both strained Si and strained SiGe, which are suitable materials for sub-7 nm CMOS devices due to their enhanced carrier mobility. For industrial applications, the threading dislocation density (TDD) has to be as low as possible. However, a reduction of the TDD is limited by the balance between dislocation glide and nucleation as well as dislocation blocking. The relaxation mechanism of low strain Si0.98Ge0.02 layers on commercial substrates is compared to substrates with a predeposited SiGe backside layer, which provides threading dislocations at the edge of the wafer. It is shown that by the exploitation of this reservoir, the critical thickness for plastic relaxation is reduced and the formation of misfit dislocation bundles can be prevented. Instead, upon reaching the critical thickness, these preexisting dislocations simultaneously glide unhindered from the edge of the wafer toward the center. The resulting dislocation network is free of thick dislocation bundles that cause pileups, and the TDD can be reduced by one order of magnitude.

Understanding the Atomic-Scale Deformation in CoNiCrFeMn Nanocrystalline High Entropy Alloy with Gradient Structure

Gradient high entropy alloys have attained great attention due to their exceptional mechanical properties. Here, molecular dynamic simulations are reported to introduce CoNiCrFeMn high entropy alloy with gradient structure and understand the relation between structural gradient and mechanical performance. The effect of gradient structure on the mechanical properties was studied by characterizing the structural evolution and dislocation substructures during tension loading. The gradient distributions of deformation faults and dislocations from the surface to the center of samples were explored in detail. Quantitative analysis shows that simultaneous improvement of ductility and strength is afford by high densities of dislocations in the grain interior. Moreover, the results revealed that the energy barrier for nucleation of deformation faults in the deformed layer of gradient high entropy alloy is higher than in uniform sample. The high strength and work hardening of gradient high entropy alloy attributed to the geometrically necessary dislocations distributed in grain interiors and having a form of bundles of concentrated dislocations. Based on the simulation results, the synergy between high strength and high ductility in high entropy alloys can be achieved through the gradient structure. The present study gives a method to better understanding the deformation mechanisms and mechanical properties of high entropy alloys with gradient structure.

Optical and structural properties of dislocations in InGaN

Threading dislocations in thick layers of InxGa1−xN (5% &amp;lt; x &amp;lt; 15%) have been investigated by means of cathodoluminescence, time-resolved cathodoluminescence, and molecular dynamics. We show that indium atoms segregate near dislocations in all the samples. This promotes the formation of In-N-In chains and atomic condensates, which localize carriers and hinder nonradiative recombination at dislocations. We note, however, that the dark halo surrounding the dislocations in the cathodoluminescence image becomes increasingly pronounced as the indium fraction of the sample increases. Using transmission electron microscopy, we attribute the dark halo to a region of lower indium content formed below the facet of the V-shaped pit that terminates the dislocation in low composition samples (x &amp;lt; 12%). For x &amp;gt; 12%, the facets of the V-defect featured dislocation bundles instead of the low indium fraction region. In this sample, the origin of the dark halo may relate to a compound effect of the dislocation bundles, of a variation of surface potential, and perhaps, of an increase in carrier diffusion length.

Extra strengthening and work hardening in gradient nanotwinned metals.

Gradient structures exist ubiquitously in nature and are increasingly being introduced in engineering. However, understanding structural gradient-related mechanical behaviors in all gradient structures, including those in engineering materials, has been challenging. We explored the mechanical performance of a gradient nanotwinned structure with highly tunable structural gradients in pure copper. A large structural gradient allows for superior work hardening and strength that can exceed those of the strongest component of the gradient structure. We found through systematic experiments and atomistic simulations that this unusual behavior is afforded by a unique patterning of ultrahigh densities of dislocations in the grain interiors. These observations not only shed light on gradient structures, but may also indicate a promising route for improving the mechanical properties of materials through gradient design.

Stronger copper through twin power

Metallurgy Materials with structural gradients often have unique combinations of properties. Gradient-structured materials are found in nature and can be engineered. Cheng et al. made a structural gradient by introducing gradients of crystallographic twins into copper. This strategy creates bundles of dislocations in the crystal interiors, which makes the metal stronger than any of the individual components. This method offers promise for developing high-performance metals. Science , this issue p. [eaau1925][1] [1]: /lookup/doi/10.1126/science.aau1925