Bulk Lifetime Research Articles

Effect of Ga Variation on the Bulk and Grain‐Boundary Properties of Cu(In,Ga)Se2 Absorbers in Thin‐Film Solar Cells and Their Impacts on Open‐Circuit Voltage Losses

ABSTRACTPolycrystalline widegap Cu(In,Ga)Se2 (CIGSe) absorbers for top cells in photovoltaic tandem devices can be synthesized via [Ga]/([Ga] + [In]) (GGI) ratios of > 0.5. However, the power conversion efficiencies of such high‐GGI devices are smaller than those of the record cells with GGI < 0.5. In the present work, the effects of the GGI ratio on various CIGSe material properties were studied and correlated with the radiative and nonradiative open‐circuit voltage (VOC) deficits of the thin‐film solar cells. Average grain sizes, grain boundary (GB) recombination velocities, fluctuations in luminescence energy distribution, barrier heights at GBs, effective electron lifetimes, and Urbach energies were investigated in five solar cells with GGI ratios from 0.13 to 0.83. It was found that the GGI variation affects GB recombination velocities, fluctuations in spatial luminescence distributions, the average grain size, the electron lifetime, and the Urbach energy. In contrast, the detected ranges of barrier heights at GBs are independent of the GGI ratio. Mainly Ga/In gradients give rise to substantial radiative VOC losses in all solar cells. Nonradiative VOC deficits are dominant especially for solar cells with GGI > 0.5, which can be attributed to low bulk lifetimes and enhanced recombination at GBs in CIGSe absorbers in this compositional range.

Systematic Modeling and Optimization for High‐Efficiency Interdigitated Back‐Contact Crystalline Silicon Solar Cells

This study utilizes Quokka3, an advanced solar cell simulation program, specifically tailored for interdigitated back‐contact (IBC) crystalline silicon (c‐Si) solar cells. Through meticulous Quokka3 simulations, the influence of several geometric and wafer characteristics of the solar cell backside on current–voltage (I–V) performance has been scientifically explored for IBC c‐Si solar cells. The investigation encompasses parameters such as wafer thickness, bulk lifetime, resistivity, emitter and back surface field area fraction, and front‐ and rear‐surface passivation. Optimal values for these parameters have been proposed to enhance the efficiency of IBC solar cells. These recommendations contain an emitter percentage of 70%, a wafer thickness ranging from 200 μm, a wafer resistivity of 1 Ω cm, and a wafer bulk lifetime of at least 10 ms. Moreover, under conditions where the cell is not short‐circuited, the potential for achieving higher cell efficiency, up to 26.64%, has been shown.

Silicon‐Inspired Analysis of Interfacial Recombination in Perovskite Photovoltaics

AbstractPerovskite solar cells have reached an impressive certified efficiency of 26.1%, with a considerable fraction of the remaining losses attributed to carrier recombination at perovskite interfaces. This work demonstrates how time‐resolved photoluminescence spectroscopy (TRPL) can be utilized to locate and quantify remaining recombination losses in perovskite solar cells, analogous to methods established to improve silicon solar cell passivation and contact layers. It is shown how TRPL analysis can be extended to determine the bulk and surface lifetimes, surface recombination velocity, the recombination parameter, J0, and the implied open‐circuit voltage (iVoc) of any perovskite device configuration. This framework is used to compare 18 carrier‐selective and passivating contacts commonly used or emerging for perovskite photovoltaics. Furthermore, the iVoc values calculated from the TRPL‐based framework are directly compared to those calculated from photoluminescence quantum yields and the measured solar cell Voc. This simple technique serves as a practical guide for screening and selecting multifunctional, passivating perovskite contact layers. As with silicon solar cells, most of the material and interface analysis can be done without fabricating full devices or measuring efficiency. These purely optical measurements are even preferable when studying bulk and interfacial passivation approaches, since they remove complicating effects from poor carrier extraction.

Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk

Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk

Maximizing efficiency: Numerical modeling and optimization of 2-terminal perovskite/silicon tandem devices with different bottom cell structures

Two-terminal perovskite/silicon (Si) tandem solar cells have made significant progress in terms of efficiency and are considered suitable candidates for the next generation of photovoltaic devices. However, research on Si bottom cell optimization is limited, with optimization being conducted only within a specific structure reported as high efficiency. To present more general and higher efficiency possibilities, optimization is necessary not only for the perovskite and interlayer but also for each bottom Si solar cell structure. In this study, we proposed a numerical modeling approach for analyzing and optimizing the effects of optical and electrical properties in 2-terminal tandem structures. First, the properties for each layer were discussed to minimize optical loss using optical simulations, considering the recently reported high-efficiency 2-terminal perovskite/Si tandem system. After fixing the top perovskite and recombination layer using these properties, each bottom Si structure, which is divided into homojunction (PERC and TOPCon structure) and heterojunction (HIT structure), was electrically simulated. The characteristics of Si bottom cells were identified based on bulk properties (bulk lifetime and resistivity). Consequently, we proposed an improvement method and structure capable of achieving maximum possible efficiency of more than 30 % as a tandem device for each bottom cell structure.

Surface-state-related carrier dynamics of GaAs determined by UV-visible pump-probe terahertz spectroscopy

The surface velocity and the bulk lifetime of photo-excited free carriers in GaAs were measured using an optical-pump and THz-probe time-domain technique. By varying the pump laser photon energy from 1.56 to 4.15 eV, we observe that the surface velocity drops abruptly from 0.7×106 cm/s down to 0.2×106 cm/s at 2.5 eV, while the bulk lifetime remains almost constant. We tentatively explain this step-like behavior of the surface velocity vs the photon energy by a trapping of the free carriers at surface states, whose density of states shows a maximum at 2.5 eV.

Positron annihilation lifetime spectroscopy of FeCr and FeCrAl oxide dispersion strengthened (ODS) alloys

Positron annihilation lifetime spectroscopy (PALS) was performed to characterize the interfacial nanostructure between the oxide particles and ferritic matrix in two types of oxide dispersion strengthened (ODS) alloys: FeCr dispersed with Y-Ti oxide nanoparticles and FeCrAl dispersed with Y-Al oxide nanoparticles. The spectra were precisely fitted and decomposed into three components with two trapping rates. Bulk lifetime approached the theoretical value of 107 ps by taking into account the positron trapping at two types of defects. Structural characterization was performed by coincidence Doppler broadening and high-resolution transmission electron microscopy (HRTEM), revealing that two-trapping defect clusters were closely associated with Y-Ti or Y-Al oxide particles. Trapping was not detected in the non-ODS alloys. Based on Kuramotos advanced theoretical work, the shorter annihilation lifetime (179–194 ps) could be ascribed to positron trapping at vacancies and divacancies localized under the misfit dislocations associated with Y-Ti or Y-Al oxide particles. The longer annihilation lifetime (301–323 ps) could be attributed to Ar-filled gas bubbles precipitated at the oxide particle-matrix interfaces. These results of PALS analyses were consistent with the HRTEM characterization.

Ultrafast Exciton Dynamics in the Atomically Thin van der Waals Magnet CrSBr.

Among atomically thin semiconductors, CrSBr stands out as both its bulk and monolayer forms host tightly bound, quasi-one-dimensional excitons in a magnetic environment. Despite its pivotal importance for solid-state research, the exciton lifetime has remained unknown. While terahertz polarization probing can directly trace all excitons, independently of interband selection rules, the corresponding large far-field foci substantially exceed the lateral sample dimensions. Here, we combine terahertz polarization spectroscopy with near-field microscopy to reveal a femtosecond decay of paramagnetic excitons in a monolayer of CrSBr, which is 30 times shorter than the bulk lifetime. We unveil low-energy fingerprints of bound and unbound electron-hole pairs in bulk CrSBr and extract the nonequilibrium dielectric function of the monolayer in a model-free manner. Our results demonstrate the first direct access to the ultrafast dielectric response of quasi-one-dimensional excitons in CrSBr, potentially advancing the development of quantum devices based on ultrathin van der Waals magnets.

Space charge region recombination in highly efficient silicon solar cells

The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with a long Shockley–Reed–Hall lifetime is calculated theoretically by taking into account the concentration gradient of excess electron-hole pairs in the base region. Effects of the SCR lifetime and applied voltage on the structure ideality factor have been analyzed. The ideality factor is significantly reduced by the concentration gradient of electron-hole pairs. This mechanism provides an increase of the effective lifetime compared to the case when it is insignificant, which is realized at sufficiently low pair concentrations. The theoretical results have been shown to be in agreement with experimental data. A method of finding the experimental recombination rate in SCR in highly efficient silicon solar cells (SCs) has been proposed and implemented. It has been shown that at the high excess carrier concentration exceeding 1015 cm–3 the contribution to the SCR recombination velocity from the initial region of SCR that became neutral is significant. From a comparison of theory with experiment, the SCR lifetime and the ratio of the hole to the electron capture cross sections are determined for a number of silicon SCs. The effect of SCR recombination on the key characteristics of highly efficient silicon SCs, such as photoconversion efficiency and open-circuit voltage, has been evaluated. It has been shown that they depend not only on the charge carrier lifetime in SCR, but also on the ratio of hole to electron capture cross sections σp /σn. When σp /σn < 1, this effect is significantly strengthened, while in the opposite case σp /σn > 1 it is weakened. It has been ascertained that in a number of highly efficient silicon SCs, the distribution of the inverse lifetime in SCR is described by the Gaussian one. The effect described in the paper is also significant for silicon diodes with a thin base, p-i-n structures, and for silicon transistors with p-n junctions. In Appendix 2, the need to take into account the lifetime of non-radiative excitonic Auger recombination with participation of deep impurities in silicon is analyzed in detail. It has been shown, in particular, that considering it enables to reconcile the theoretical and experimental dependences for the effective lifetime in the silicon bulk.

Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects

An assessment of the bulk material quality of industrial Czochralski (Cz) grown phosphorus‐doped n‐type silicon (Si) wafers along an ingot is reported. The minority charge carrier lifetimes of the Cz‐Si wafer bulk before and after phosphorous (POCl3) diffusion gettering are assessed, by applying room‐temperature superacid surface passivation to avoid any additional gettering or hydrogenation effect. A substantial increase in the bulk lifetime of all of the n‐type Cz‐Si wafers along the ingot is observed, indicating the effectiveness of a gettering step for such wafers and the presence of getterable metallic impurities in these wafers. By experimentally monitoring the lifetime changes upon a gettering anneal and simulating the gettering kinetics based on different metal diffusivities, iron is identified to be a limiting defect, at least for the wafers from the tail part of the ingot. A dissolved iron concentration of is estimated from the bulk lifetimes of the tail wafers. This lifetime kinetics approach is also a demonstration of a new method to identify iron, or other getterable metals with moderate diffusivities such as chromium, in n‐type silicon wafers.

Modeling the performance of perovskite solar cells with inserting porous insulating alumina nanoplates

Peng et al. [Science 379 683 (2023)] reported an effective method to improve the performance of perovskite solar cells by using thicker porous insulator contact (PIC)-alumina nanoplates. This method overcomes the trade-off between the open-circuit voltage and the fill factor through two mechanisms: reduced surface recombination velocity and increased bulk recombination lifetime due to better perovskite crystallinity. From arguments of drift-diffusion simulations, we find that an increase in mobility and carrier recombination lifetime in bulk are the key factors for minimizing the resistance-effect from thicker PICs and achieving a maximum power conversion efficiency (PCE) at approximately 25% reduced contact area. Furthermore, the partially replacement of perovskite films with thicker PICs would result in a reduction in short-current density, but the relative low refractive index of the PICs imbedded into the high refractive index perovskite creates light trapping structures that compensate for this loss.

Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects

Understanding surface passivation arising from aluminium oxide (Al2O3) films is of significant relevance for silicon-based solar cells and devices that require negligible surface recombination. This study aims to understand the competing bulk and surface lifetime effects which occur during the activation of atomic layer deposited Al2O3. We demonstrate that maximum passivation is achieved on n- and p-type silicon with activation at ∼ 450 °C, irrespective of annealing ambient. Upon stripping the Al2O3 films and re-passivating the surface using a superacid-based technique, we find the bulk lifetime of float-zone and Czochralski silicon wafers degrade at annealing temperatures > 450 °C. By accounting for this bulk lifetime degradation, we demonstrate that the chemical passivation component associated with Al2O3 remains stable at activation temperatures of 450─500 °C, achieving an SRV of < 1 cm/s on n- and p-type silicon. In conjunction with the thermal stability, we show that films in the range of 3–30 nm maintain an SRV of < 1 cm/s when annealed at 450 °C. From atomic-level energy dispersive X-ray analysis, we demonstrate that, post deposition, the interface has a structure of Si/SiO2/Al2O3. After activation at > 300 °C, the interface becomes Si/SixAlyO2/Al2O3 due to diffusion of aluminium into the thin silicon oxide layer.

Adequate method to study the surface passivation effectiveness in HEM multicristallin silicon wafers

In this work we have examined the effectiveness of surface passivation on ascut multicrystalline silicon (mc-Si) wafers using different techniques. The study is based on minority carrier lifetime measurements with quasi steady state photo-conductance, ‘QSSPC’. Effective minority carrier lifetime ()measured values of 12.4, 8.9, 4.9 and 3.1 are obtained respectively with four silicon surface passivation techniques: 1- Shallow phosphorous diffusion emitter (n+p), 2- Iodine-Ethanol (I-E), 3-Hydrofluoric acid (HF) emersion and 4-SiNx layer deposition. These results suggest that the shallow n+p emitter gives the eff close to the bulk lifetime due to the better surface passivation quality. Simulations made with Hornbeck-Haynes model indicate that the improvement can be correlated with the decrease of the surface recombination velocity (SRV) and the increment of bulk lifetime.

On the Impact of Bulk Lifetime on the Quantification of Recombination at the Surface of Semiconductors

On the Impact of Bulk Lifetime on the Quantification of Recombination at the Surface of Semiconductors

TOPerc Solar Cell: An Integral Approach of Tunnel Oxide Passivated Contact (TOPCon) and Passivated Emitter and Rear Contact (PERC) Architectures for Achieving Efficiency Beyond 25%

Passivated emitter and rear contact (PERC) on p‐type mono silicon has a roadmap for achieving &gt;24% efficiency. The decrease of the full‐area rear metal contact to partial rear contact (&lt;10%) accounts for the majority of the increase in efficiency of PERC solar cells over Al‐BSF solar cellswhich reached its maximum efficiency around 19.5%. P‐type tunnel oxide passivated contacts (TOPCon) solar cells have achieved further improvement in efficiency ≥25% by completely removing the partial rear metal contact and introducing a thin tunneling oxide layer at the rear. Thus passivating the partial rear and front metal contacts using SiOx/poly‐Si tunnelling layer stacks and an AlOx/SiNx stack on the entire back surface to passivate the remaining areas might lead to further advancements in PERC solar cells. Therefore, by integrating TOPCon and PERC architectures, as originally proposed by Fraunhofer lab, a modified design known as TOPerc solar cell has been studied in depth in this paper. Using 3D Sentaurus TCAD simulation software, a thorough numerical simulation of a p‐TOPerc solar cell has been performed. It is shown that efficiency of 25.2% and 26.0% is obtained for a p‐type wafer of bulk lifetime of 400 μs and 5.0 ms, respectively.

Optimization of heterojunction back-contact (HBC) crystalline silicon solar cell based on Quokka simulation

For heterojunction back-contact (HBC) crystalline silicon (c-Si) solar cell based on n-type c-Si wafer, the effects of various wafer properties and geometric features of the solar cell back side on the solar cell current-voltage (I-V) performance were systematically studied by Quokka simulation, including the wafer thickness, resistivity and bulk lifetime, the emitter (P region) percentage on the surface, the total pitch of P and N regions, and the contact ratio of the transparent conductive oxide (TCO) film on the P or N region. The preferred values of such parameters for the HBC solar cell to get high efficiency were proposed. The emitter percentage is 80%, the total pitch of P and N is 1.6 mm, the wafer thickness is in the range of 90–120 µm, the wafer resistivity is 0.5 Ω·cm-0.9 Ω·cm, the wafer bulk lifetime is not less than 4 ms, and as long as the cell is not short-circuited, the larger the contact ratio of the TCO, the higher the cell efficiency.

Long-Range Interface Effects in Room Temperature Ionic Liquids: Vibrational Lifetime Studies of Thin Films.

Interface effects in the room temperature ionic liquids (RTILs) 1-butyl-3-methylimidazolium tetrafluoroborate (BmimBF4) and 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (BmimNTf2) were investigated using ultrafast infrared polarization selective pump-probe (PSPP) spectroscopy. The CN stretch mode of SCN- dissolved in the RTILs was used as the vibrational probe. The vibrational lifetime of the SCN- was the experimental observable. Quite similar single SCN- lifetimes were observed: 59.5 ± 0.4 ps in bulk BmimBF4 and 56.4 ± 0.4 ps in bulk BmimNTf2. Thin films of both RTILs with thicknesses in the range of 15-300 nm were prepared by spin coating on functionalized substrates. PSPP experiments were performed in a small-incidence reflection geometry. In the thin films, a second, shorter lifetime was observed in addition to the bulk lifetime, with the amplitude of the shorter lifetime increasing with decreasing film thickness. By modeling the thickness dependence of the lifetime amplitudes, the correlation length of the interface effect (constant for exponential falloff of the influence of the interface) was determined to be 44.6 ± 0.6 nm for BmimBF4 and 48.3 ± 2.2 nm for BmimNTf2. The values for the shorter film lifetimes were 12.6 ± 0.1 ps for BmimBF4 and 20.2 ± 0.6 ps for BmimNTf2; the substantial differences from the bulk lifetimes showed that some of the SCN- anions near the interface experience an environment distinct from that of the bulk. It was also found that for the BmimNTf2 sample only, some of the SCN- anions reside in the surface functionalized layer with two distinct environments having distinct lifetimes.

Interplay Between Strain and Thickness on the Effective Carrier Lifetime of Buffer-Mediated Epitaxial Germanium Probed by the Photoconductance Decay Technique

We report contactless effective minority carrier lifetime of epitaxially grown unstrained and in-plane <110> biaxially tensile-strained (001) germanium (ε-Ge) epilayers measured using microwave-reflectance photoconductance decay measurements. Strained Ge epilayers were grown using InxGa1–xAs linearly graded buffers on (001) GaAs substrates. Using homogeneous excitation of unstrained Ge epilayers, thickness-dependent separation of minority carrier lifetime components under low injection conditions yielded a bulk lifetime of 114 ± 2 ns and low surface recombination velocity of 21.3 ± 0.04 cm/s. More notably, an effective minority carrier lifetime of >100 ns obtained from sub-50 nm 1.6% tensile-strained Ge epilayers showed no degradation relative to the unstrained counterpart. Detailed material characterization using X-ray diffractometry revealed successful strain transfer of 0.61 and 0.89% to the Ge epilayers via InxGa1–xAs metamorphic buffers and confirms pseudomorphic growth. Lattice coherence observed at the ε-Ge epilayer and InxGa1–xAs buffer heterointerfaces via transmission electron microscopy substantiates the prime material quality achieved. The relatively high carrier lifetimes achieved are an indicator of excellent material quality and provide a path forward to realize low-threshold Ge laser sources.

Application of n‐Polysilicon Rear Emitter for High‐Efficiency p‐TOPCon Solar Cells

AbstractThis study entails the examination of tunnel oxide passivated contact on p‐type silicon wafers (p‐TOPCon) passivated with n‐polysilicon for a solar cell by using Quokka‐3, a numerical simulation program. The effects of the thickness, bulk lifetime, resistivity, and selectivity of charge carriers due to the polysilicon passivated contact are investigated. Through such n‐polysilicon passivated contact, the back‐emitter solar cells engender higher internal power owing to enhanced surface passivation. This further reduces the shading loss due to front metallization; however, the reduced minority carrier lifetime of the p‐type Czochralski (Cz) wafer restricts the possibilities for high efficiency. Subsequently, the minority charge carrier lifetime of the p‐type wafer conceivably becomes an obstacle to realizing TOPCon solar cells with a high conversion efficiency. This study demonstrates that a configuration suitable for the industrial manufacturing of high‐efficiency solar cells is a crystalline silicon solar cell on a p‐type wafer through a rear‐emitter n‐polysilicon passivated contact. A roadmap toward 24.87% of the p‐TOPCon solar cells through the n‐type polysilicon passivated contact is also devised.

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se2 Solar Cells Fabricated using Different Methods

Voltage losses reduce the photovoltaic conversion efficiency of thin‐film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se2. Herein, voltage loss analysis of Cu(In,Ga)Se2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute &gt;75% of the total compared to &lt;25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition‐driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells.