Abstract
This study utilizes Quokka3, an advanced solar cell simulation program, specifically tailored for interdigitated back‐contact (IBC) crystalline silicon (c‐Si) solar cells. Through meticulous Quokka3 simulations, the influence of several geometric and wafer characteristics of the solar cell backside on current–voltage (I–V) performance has been scientifically explored for IBC c‐Si solar cells. The investigation encompasses parameters such as wafer thickness, bulk lifetime, resistivity, emitter and back surface field area fraction, and front‐ and rear‐surface passivation. Optimal values for these parameters have been proposed to enhance the efficiency of IBC solar cells. These recommendations contain an emitter percentage of 70%, a wafer thickness ranging from 200 μm, a wafer resistivity of 1 Ω cm, and a wafer bulk lifetime of at least 10 ms. Moreover, under conditions where the cell is not short‐circuited, the potential for achieving higher cell efficiency, up to 26.64%, has been shown.
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