Effect Of Built-in Electric Field Research Articles

Synergetic enhancement of sodium storage in gallium-based heterostructures

Gallium chalcogenides, emerging as promising anode for sodium-ion batteries (SIBs), show high capacity utilization and self-healing ability but poor electrochemical performance owing to their inferior electrical conductivity and sluggish ion diffusion. Building heterostructures is regarded as a valid strategy to facilitate carrier transfer and boost sodium storage. Herein, we develop a controllable two-step approach to synthesize the Ga 2 O 3 @Ga 2 S 3 @C heterostructures. Serving as the anode for SIBs, it exhibits a reversible capacity of 680 mAh g −1 at a current density of 0.1 A g −1 after 100 cycles, as well as superior cyclic stability (410 mAh g −1 at an ultrahigh current density of 20.0 A g −1 over 4000 cycles). The mechanism for the enhanced sodium storage of Ga 2 O 3 @Ga 2 S 3 @C heterostructures is disclosed, which is mainly ascribed to the synergistic effect of built-in electric field and interfacial effect in p-n junctions, helping the sodium ions diffusion and the further conversion reactions. • The uniform Ga 2 O 3 @Ga 2 S 3 @C heterostructures are developed by a two-step method. • The Ga 2 O 3 @Ga 2 S 3 @C is an outstanding anode for sodium-ion batteries (SIBs). • High capacity, superior rate capability and cycle stability for SIBs are achieved. • Built-in electric field and interfacial effect in heterostructures help Na storage.

Constructing 3D Bi/Bi4O5I2 microspheres with rich oxygen vacancies by one-pot solvothermal method for enhancing photocatalytic activity on mercury removal

A 3D hierarchical metallic Bi modified Bi4O5I2 microspheres with rich oxygen vacancies (Vos) was successfully prepared via a one-pot solvothermal method. In this work, the different morphologies of BiOI and Bi modified Bi4O5I2 were prepared by precipitation, hydrothermal and solvothermal methods. It was discovered that using the solvothermal method with ethylene glycol as the solvent could not only prepare microspheres Bi4O5I2 with rich oxygen vacancies but also control the content of Bi by changing the reaction duration. The doping of metallic Bi created a built-in electric field between Bi and Bi4O5I2, which is helpful to improve the efficiency of carrier separation. Benefited from the synergistic effect of oxygen vacancies and built-in electric field, the as-prepared Bi/Bi4O5I2 exhibits an excellent mercury removal efficiency, high-performance stability, and satisfactory sulfur resistance as well as nitric oxide resistance. Finally, the mechanism of catalytic oxidation reaction was proposed, photo-generated holes and superoxide radicals were predominant in the photocatalytic reaction.

Ag-Modified ZnO Nanorod Array Fabricated on Polyester Fabric and Its Enhanced Visible-Light Photocatalytic Performance by a Built-in Electric Field and Plasmonic Effect.

ZnO nanorod arrays (NRAs) were fabricated on polyester fabrics (PFs) by a two-step method and modified with Ag by magnetron sputtering. The photogenerated charge transport properties of the Ag/ZnO nanorod heterojunctions were studied by a self-made Kelvin probe system and a surface photovoltage (SPV) test system. The measured work functions (WFs) of the deposited Ag and ZnO nanorod are 4.67 and 5.56 eV, respectively. The SPV spectra indicate that the direction of the inner electric field is from the Ag layer to the inner of the ZnO nanorod. The enhancement of light absorption by the local surface plasma resonance (LSPR) effect of Ag/ZnO NRA was observed by Raman microspectroscopy and UV–vis diffuse reflectance spectroscopy. The photocatalytic activity of the Ag/ZnO NRA-functionalized PFs was evaluated by the photocatalytic degradation of Rhodamine B (RB) solution under visible light. The full photo-oxidation of RB and the outperforming ZnO NRA-coated PFs demonstrate that the enhanced photocatalytic performance of Ag/ZnO NRA-coated PFs results from the cooperation of the inner electric field of the Ag/ZnO nanorod heterojunction and Ag LSPR.

An all-organic 0D/2D supramolecular porphyrin/g-C3N4 heterojunction assembled via π-π interaction for efficient visible photocatalytic oxidation

Herein, an all-organic self-assembled tetra(4-carboxylphenyl)porphyrin (SA-TCPP)/oxidized g-C3N4 (O-CN) heterojunction photocatalyst was successfully synthesized through an in-situ electrostatic method. As a nanocrystalline supramolecular semiconductor, SA-TCPP could sufficiently contact with the surface of O-CN nanosheets, resulting in a 0D/2D assembling heterostructure via π-π interaction. The full-spectrum responsive property of SA-TCPP could enhance the light-harvesting ability of O-CN to generate more photogenerated carries, which was a driving force for photocatalytic reaction. The well-matched band structures and the π-π interaction between SA-TCPP and O-CN could give rise to a built-in electric field and electron delocalization effect to promote the interfacial charge transfer. A large amount of highly oxidative reactive species (h+, O2− and 1O2) also could make a great contribution to the strong oxidation capacity of the heterojunction system. Compared with O-CN and SA-TCPP, SA-TCPP/O-CN exhibited greatly improved visible photocatalytic oxidation performance towards pollutants degradation, oxygen evolution and disinfection. The apparent rate constant (k) of SA-TCPP/O-CN-40% for bisphenol A degradation was 3.7 times as high as that of O-CN, while the corresponding k for phenol degradation were about 2.5 times faster than that of SA-TCPP. The oxygen evolution rate of SA-TCPP/O-CN-40% were 4.7 and 2.7 times higher than those of O-CN and SA-TCPP, respectively. Additionally, the bactericidal efficiency of SA-TCPP/O-CN-40% (62.5 %) against Staphylococcus aureus cells within 8 min was also more outstanding than those of O-CN (negligible) and SA-TCPP (55.6 %). Therefore, the enhanced photocatalytic oxidation activities of SA-TCPP/O-CN heterojunction were ascribe to the synergistic effect between O-CN and SA-TCPP.

TiO2@PCN core-shell nanoarrays decorated with Au nanoparticles for enhanced photoelectrochemical performance

Utilization of solar energy to split water via photoelectrochemical (PEC) technique is a desirable technology to address the development of sustainable carbon-free energy source. The key challenge of this advanced technique is to design a photoelectrode with both high solar to chemical efficiency and fast charge transfer and separation efficiency. Herein, the core-shell heterostructure of TiO2@PCN (P doped g-C3N4) decorating with Au nanoparticles (Au NPs) photoanode (Au/TiO2@PCN) is successfully fabricated for high-efficiency PEC water splitting. The resulting integrated Au/TiO2@PCN photoanode exhibits significantly enhanced PEC activities both in UV and visible light region with AM 1.5 G irradiation (100 mW cm−2). Each component of Au/TiO2@PCN plays a vital role in promoting the PEC performance. The TiO2@PCN core-shell heterostructure could remarkably facilitate the charge transfer and separation efficiency with the effect of an internal built-in electric field. The introduction of Au NPs could further enhance the charge transfer efficiency and improve the PEC activity of TiO2@PCN in visible light, which is attributed to the localized surface plasmon resonance (LSPR) effect. Accordingly, the Au/TiO2@PCN presents pronounced photocurrent density of 2.03 mA cm−2 (1.23 V vs. RHE), which is four-fold higher than that of TiO2 NRs (0.51 mA cm−2). This work supports a new approach to combine the advantages of the core-shell heterostructure and the LSPR effect of noble metal for high-performance PEC water oxidation.

The synergistic effect with S-vacancies and built-in electric field on a TiO2/MoS2 photoanode for enhanced photoelectrochemical performance

Synergistic effects of S-vacancies and built-in electric field is performed for highly efficient carrier separation and transport.

Improved performance characteristics of violet InGaN MQW LDs through asymmetric W-shaped quantum wells

Abstract This study focuses on the numerical study of the built-in electric field effects, induced by spontaneous and piezoelectric polarization, on the performance characteristics of violet InGaN MQW LDs. The simulation results indicate that the induced electric field significantly deteriorates LDs performance due to QCSE, band bending, and consequent separation of the electron and hole wave functions. A new asymmetric W-shaped QWs structure is proposed to overcome QCSE, and enhance the overlapping of electron and hole wave function, and to improve the band bending situation. The In0.16Ga0.84N/InyGa1-yN/In0.16Ga0.84N QWs LDs improve the overlapping of electron and hole wave functions from 52.52, 26.39, and 4.47% for QW1, QW2, and QW3 of conventional LD structure to 48.33, 48.12, and 53.12%, respectively. Improved distributions of the electron and hole carriers in the active region, along with a higher electron and hole overlapping, result in enhanced radiative and stimulated recombination rates, hence, higher output power, and lower threshold current. The proposed W-shaped QW LDs improves threshold current and output power from 82.87 mA to 15.89 mW to 60.67 mA and 20.69 mW, respectively.

Hollow N-doped carbon @ O-vacancies NiCo2O4 nanocages with a built-in electric field as high-performance cathodes for hybrid supercapacitor

Delicate design of nanostructured electrode materials with built-in electric field effect can make them have satisfactory electrochemical performance through the synergistic effects. Here, we prepare an advanced electrode material, a hollow N-doped carbon@O-vacancies NiCo2O4 nanocage (HNC@NiCo2O4), in which NiCo2O4 nanosheets are homogeneously grown on the N-doped carbon frame. This unique hollow nanocage can increase the contact-area between the material and electrolyte, further improving the electrochemical activities. Density functional theory simulations reveal that O-vacancies in NiCo2O4 can narrow the bandgap, which may contribute to the charge transfer dynamic of HNC@NiCo2O4 series. Meanwhile, N-doping can change the carbon-skeleton states density, thereby improving the electron-accepting capabilities for nearby NiCo2O4, and thus elevating the capacitive behaviors. Accordingly, a built-in electric field is in-situ constructed via the O-vacancies and N-doping. Due to the synergistic effect of a hollow structure and built-in electric field, as-fabricated HNC@NiCo2O4-0.45 electrode delivers noticeable specific-capacitance (966.2 F g−1@1 A g−1) and long-term endurance. Impressively, the HNC@NiCo2O4-0.45 electrode is employed to assemble a hybrid supercapacitor with the active carbon anode, which behaves a high energy-density (41.9 Wh kg−1 at 750.4 W kg−1). Above results validate that the electric field modulation and nanostructure construction are important tactics to design a high-performance supercapacitor electrode.

Electronic states and photocatalytic performances of SnS2-based binary and ternary vdW heterostructures

Under the framework of the first principles theory, the SnS2 based binary and ternary heterostructures including h-BN/SnS2, g-C3N4/SnS2, ZrS2/SnS2, h-BN/g-C3N4/SnS2, h-BN/ZrS2/SnS2, g-C3N4/h-BN/SnS2, g-C3N4/ZrS2/SnS2, ZrS2/h-BN/SnS2 and ZrS2/g-C3N4/SnS2 are systematically studied. The absolute values of lattice mismatches (|η|) of binary and ternary heterostructures do not exceed 3.87% and 1.93%, respectively. The negative formation energies also prove the stable states. The band gaps of all the heterostructures are in the range of 1.44 eV–1.91 eV and suitable to water decompostion. The charge transfer in the h-BN/g-C3N4/SnS2, h-BN/ZrS2/SnS2, g-C3N4/h-BN/SnS2, g-C3N4/ZrS2/SnS2, ZrS2/h-BN/SnS2 and ZrS2/g-C3N4/SnS2 heterostructures are 3.66, 1.12, 2.45, 0.57, 5.61 and 5.64 times as large as the charge transfer in the corresponding binary heterostructures. The heterostructures are sorted into Z-scheme, Type-I, Type-II/Z-scheme, Z-scheme/Type-I and Z-scheme/Z-scheme taking into account the synergistic effects of band edges and built-in electric field. Particularly, the Re and Ox centers are located in different layers of the heterostructures which can efficiently separate the photogenerated electron-hole pairs in space, and except ZrS2/SnS2, all the other heterostructures can be used to conduct spontaneous full water decomposition. Moreover, the ternary heterostructures have stronger absorption intensities with red shift absorption edges compared with the isolated nanosheets and binary heterostructures, which could be a better choice for enhanced photocatalytic performances under visible light.

Built-in electric field-assisted step-scheme heterojunction of carbon nitride-copper oxide for highly selective electrochemical detection of p-nonylphenol

Taking the advantage of the good matching of the valence and conduction bands of carbon nitride (g-C3N4) and copper oxide (CuO), we successfully fabricated a two-dimensional (2D) step-scheme heterojunction of g-C3N4/CuO via hydrothermal and pyrolysis techniques. The potential of applying this heterojunction in a high-performance electrochemical sensor for environmental hormone nonylphenol (NP) detection was investigated. An amperometric analysis resulted in a linear response on the g-C3N4/CuO modified sensor for NP ranges from 3.00 × 10−8 to 5.12 × 10−6 mol L−1 with a detection limit (S/N = 3) of 1.20 × 10−8 mol L−1. This excellent electrochemical performance could be attributed to a built-in electric field effect at the 2D step-scheme heterojunction interface, thereby boosting the interfacial charge transfer and improving the sensitivity of NP detection. The proposed sensor demonstrated a high selectivity for NP even in the presence of several common environmental hormones. This finding can be attributed to the unique electronic structure of NP molecule and its strong interaction with the 2D g-C3N4/CuO step-scheme heterojunction, as verified by density functional theory (DFT) calculations. This work provides new insights about the gradient energy band for fabricating highly-efficient electrochemical sensor, and paves the way for its potential applications in monitoring crucial environmental components.

Self-powered ultraviolet photovoltaic photodetector based on graphene/ZnO heterostructure

Compared to ZnO-based photoconductive photodetectors (PDs), photovoltaic PDs possess the advantages of easy fabrication, low dark current, high response speed and possible self-driven ability. In this paper, an ultraviolet (UV) photovoltaic photodetector based on graphene/ZnO heterostructure was fabricated and investigated. A simple surface treatment was conducted by soaking the as-grown ZnO film in H2O2 solution at room temperature. After this processing, a transition from ohmic contact to Schottky contact was observed in graphene/ZnO interface, accompanied with a high-performance photovoltaic behavior for the graphene/H2O2-treated ZnO (denoted as G/H-ZnO) heterostructure. The self-powered Schottky photodetector of G/H-ZnO exhibits a responsivity of 50 μA/W and a short rise/decay time of 32 ms at zero bias. The fast response performance benefits from the rapid separation of photogenerated carriers, which can be attributed to the synergistic effect of pyroelectric potential and built-in electric field at graphene/ZnO interface. This study provides a facile approach for the development of ZnO-based self-powered photovoltaic devices.

Effects of built-in electric field and donor impurity on linear and nonlinear optical properties of wurtzite InxGa1 – xN/GaN nanostructures**Project supported by the National Natural Science Foundation of China (Grant No. 11947414) and the Research Program of Science and Technology at University of Inner Mongolia Autonomous Region, China (Grant No. NJZZ19001).

The linear and nonlinear optical absorption coefficients (ACs) and refraction index changes (RICs) of 1s–1p, 1p–1d, and 1f–1d transitions are investigated in a wurtzite InxGa1 – xN/GaN core–shell quantum dot (CSQD) with donor impurity by using density matrix approach. The effects of built-in electric field (BEF), ternary mixed crystal (TMC), impurity, and CSQD size are studied in detail. The finite element method is used to calculate the ground and excited energy state energy and wave function. The results reveal that the BEF has a great influence on the linear, nonlinear, and total ACs and RICs. The presence of impurity leads the resonant peaks of the ACs and RICs to be blue-shifted for all transitions, especially for 1s–1p transition. It is also found that the resonant peaks of the ACs and RICs present a red shift with In-composition decreasing or core radius increasing. Moreover, the amplitudes of the ACs and RICs are strongly affected by the incident optical intensity. The absorption saturation is more sensitive without the impurity than with the impurity, and the appearance of absorption saturation requires a larger incident optical intensity when considering the BEF.

High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures

Monolayer MoS2 is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS2 is seriously limited to its growth quality and carrier mobility. In this work, we report the direct vapor growth and the optoelectronic device of vertically-stacked MoS2/MoSe2 heterostructure, and further discuss the mechanism of improved device performance. The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying. Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm2/(V·s) and a high on/off ratio of 107. The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8 × 1011 Jones, which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect. This work demonstrates that the construction of two-dimensional (2D) semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials.

Mechanism study on highly efficient polymer light-emitting diodes utilizing double-layered alkali halide electron injection layer

Enhancing the injection of electron is an effective strategy to improve the performance of polymer light-emitting diodes (PLEDs). In this work, we reported a 286% improvement in current efficiency (CE) of PLEDs by using double-layered alkali halide electron injection layer (EIL) NaCl/LiF instead of LiF. A significant enhancement of electron injection was observed after inserting the NaCl layer. To understand the mechanism of such improvement, the devices with KBr/LiF and CsF/LiF as EILs were also investigated. Experimental results show that metal cation migrated under the effect of built-in electric field (Vbi), which plays the main role on the improvement of electron injection in PLEDs.

Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures

InxGa1−xN/ZnSnN2 quantum well structures are studied in terms of a binding energy of a donor atom. 1s and 2p± impurity states are considered. The Schrödinger's and Poisson's equations are solved self-consistently. A hydrogenic type wave function to represent each impurity state is assumed. The calculations include band-bending in the potential energy profile introduced by the built-in electric field existing along the structures. The binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration. An external magnetic field up to 10 T is included into the calculations to compute the Zeeman splitting. The maximum value of the transition energy is around 30 meV (nearly 7.3 THz) which occurs in a 15-Å In0.3Ga0.7N/ZnSnN2 quantum well. Being strong, the built-in electric field makes the transition energy drop quickly with the decreasing well width. For the same reason, the energy curves are found to be highly asymmetric function of the donor position around the well center. Compared to the bulk value, the transition energy in the quantum well structures enhances nearly two-fold.

Complete-series excitonic dipole emissions in few layer ReS2 and ReSe2 observed by polarized photoluminescence spectroscopy

Excitonic emission is a key factor for a two-dimensional (2D) semiconductor to be fabricated in light-emitting device for optoelectronics application. Especially when the 2D material has a specific in-plane optical anisotropy, its excitons would become polarized dipole emitters. In this study, the whole series excitonic emissions of few-layer ReS2 and ReSe2 have been detailed characterized using polarized micro-photoluminescence (μPL) measurement. There are totally five excitonic emissions denoted as E1ex, E2ex, E3ex, ES1ex and ES2ex can be detected by the μPL experiment for both the few-layer ReS2 and ReSe2. The angular dependencies of the polarized excitonic emissions with respect to b axis (Re4 diamond-chain direction) are determined. The emission feature E1ex is the band-edge exciton while it shows orthogonal polarization with respect to both E2ex and E3ex in layered ReX2 (X = S, Se). The formation of Re4 diamond chains (DCs) in the 1 T′-phase ReS2 and ReSe2 will also assist the development of in-plane built-in electric field and forming dipoles around the DC regions. The built-in electric field effect greatly enhances the higher ES1ex and ES2ex excitonic features as evident in the photo-modulated reflectance spectra of the layered ReX2 with in-plane electrical field modulation. The binding energy and transition origin of all the excitons are also analyzed and discussed.

InGaAs Diodes for Terahertz Sensing-Effect of Molecular Beam Epitaxy Growth Conditions.

InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditions and role of defects for device operation. We present a detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes. The diodes are fabricated from InGaAs wafers grown by molecular beam epitaxy (MBE) on semi-insulating InP substrate under different technological conditions. Photoreflectance spectra indicated the presence of strong built-in electric fields reaching up to 49 kV/cm. It was demonstrated that the spectral density of voltage fluctuations at room temperature was found to be proportional to 1/f, while at lower temperatures, 77–200 K, Lorentzian-type spectra dominate due to random telegraph signals caused by individual capture defects. Furthermore, varying bias voltage, we considered optimal conditions for device room temperature operation in the THz range with respect to signal-to-noise ratio. The THz detectors grown with beam equivalent pressure In/Ga ratio equal to 2.04 exhibit the minimal level of the low-frequency noise, while InGaAs layers grown with beam equivalent pressure In/Ga ratio equal to 2.06 are found to be well suited for fabrication of room temperature bow-tie THz detectors enabling sensitivity of 13 V/W and noise equivalent power (NEP) of 200 pW/√Hz at 0.6 THz due to strong built-in electric field effects.

BiFeO3/BiVO4 p−n heterojunction for efficient and stable photocatalytic and photoelectrochemical water splitting under visible-light irradiation

The fabrication of p–n junctions with built-in electric field effect between n-type BiVO4 (BVO) and p- type BiFeO3 (BFO) can be efficient strategy to separate photogenerated carriers and enhances photocurrent density and photostability in BVO. We developed a facile ultrasonic/hydrothermal route to successfully synthesize BFO/BVO p–n junction that greatly improved the performance of n-type BVO and p-type BFO for photocatalytic degradation of tetracycline (TC) and photoelectrochemical (PEC) water splitting. The photodegradation of TC by BVO and BFO was highly dependent on solution pH, but that by BFO/BVO was not. The BFO/BFO p–n junction nanostructures improved the photocatalytic degradation of TC from 31% and 22% with BFO to 84% and 95% with BFO/BVO p–n junction at pH 6.7 and 9.5, respectively, and also from 37% with BVO to 84% with BFO/BVO p–n junction at pH = 2.5. The BFO/BVO nanostructures showed good photocurrent density of 0.36 mA cm −2 under UV–vis light and 0.23 mA cm-2 under visible light at 1.0 V vs. Ag/AgCl, which are 3.0- and 3.28-fold greater than those of BVO. The structures also showed great stability (more than 88% of the initial photocurrent density) over 1 h, whereas BVO had poor stability (63%). The difference between photocurrent densities from front- and back-side illumination in the BFO/BVO p–n junction was substantially reduced to 0.04 mA cm-2 as compared to 0.11 mA cm-2 in BVO due to the formation of a p–n heterojunction between p-type BFO and n-type BVO. The stable BFO/BVO p–n junction also showed the highest charge carrier density as compared to BVO.

Near-UV narrow bandwidth optical gain in lattice-matched III–nitride waveguides

We demonstrate optically-pumped waveguides grown on freestanding GaN substrate featuring AlInN claddings and GaN/Al0.1Ga0.9N multiple quantum wells exhibiting narrow bandwidth (3.8 nm) optical gain around 370 nm. Due to the high refractive index contrast between the cladding layers and the active region, the confinement factor is as high as 48% and net modal gain values in excess of 80 cm−1 are measured. The results agree well with self-consistent calculations accounting for built-in electric field effects and high carrier density related phenomena. These results open interesting perspectives for the realization of more efficient near-UV lasers and optical amplifiers.

Exciton binding and excitonic transition energies in wurtzite Zn1-xCdxO/ZnO quantum wells

Binding energy of the 1s exciton state in the Zn1-xCdxO/ZnO quantum wells, changing between 10 and 50 Å in width, has been calculated for x up to 0.2. The exciton wave function is represented in terms of hydrogenic wave functions and the effects of dielectric mismatch, exciton-phonon interactions and built-in electric field on the binding energy are considered. The calculated built-in electric field is around 19.6x MV cm−1 in a 20-Å Zn1-xCdxO/ZnO quantum well. The numerical results indicate that the exciton binding energy stays below its bulk value virtually for all x because of the built-in electric field dominating the quantum confinement effect. The binding energy is nearly 26 meV at maximum, barely above its bulk value, and about 13 meV at minimum. The contribution of the dielectric mismatch is up to 40% while that of the exciton-phonon interactions is negligible. The exciton binding energy increases up to 66 meV, well above the bulk value, in case the built-in electric field is neglected. A qualitative agreement between the calculated excitonic transition energies and the low temperature and low excitation intensity photoluminescence peak data is obtained although some ZnCdO material properties, such as low temperature band gap, are not available.