Barium titanate [BT] and barium strontium titanate [BST] solid solution films have been fabricated by a modified sol-gel processing technique from barium acetate {Ba(CH3COOH)2}, strontium acetate [Sr(CH3COOH)2] and titanium (IV) Isopropoxide [Ti[(CH3)2CHO]4] precursors. The as-fired films were found to be amorphous that crystallized to perovskite phase after annealing the films at 550°C in air for one hour. The dielectric constant (ϵ) and loss tangent (tanδ) of the BaTiO3 film at 1 kHz was found to be 360 and 0.01 respectively. The dielectric constant showed a broad anomaly peak at 130°C that confirms ferroelectric-paraelectric transition. The room temperature dielectric constant and loss factor of this film were found to be 450 and 0.005 respectively. The dielectric anomaly peak of the BST film was found to shift towards lower temperature with Sr content. Both BT and BST showed butterfly capacitance-voltage (C-V) and conductance-voltage (G-V) loops, confirming the existence of ferroelectricity in these films.